TWI786243B - 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩以及半導體裝置之製造方法 - Google Patents

附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩以及半導體裝置之製造方法 Download PDF

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TWI786243B
TWI786243B TW107146312A TW107146312A TWI786243B TW I786243 B TWI786243 B TW I786243B TW 107146312 A TW107146312 A TW 107146312A TW 107146312 A TW107146312 A TW 107146312A TW I786243 B TWI786243 B TW I786243B
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Taiwan
Prior art keywords
film
substrate
conductive film
reflective
conductive
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TW107146312A
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English (en)
Chinese (zh)
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TW201928506A (zh
Inventor
中川真徳
笑喜勉
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
TW107146312A 2017-12-27 2018-12-21 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩以及半導體裝置之製造方法 TWI786243B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017251163 2017-12-27
JP2017-251163 2017-12-27

Publications (2)

Publication Number Publication Date
TW201928506A TW201928506A (zh) 2019-07-16
TWI786243B true TWI786243B (zh) 2022-12-11

Family

ID=67067319

Family Applications (1)

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TW107146312A TWI786243B (zh) 2017-12-27 2018-12-21 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩以及半導體裝置之製造方法

Country Status (6)

Country Link
US (1) US11561463B2 (https=)
JP (1) JP7208163B2 (https=)
KR (1) KR102830574B1 (https=)
SG (1) SG11202005918UA (https=)
TW (1) TWI786243B (https=)
WO (1) WO2019131506A1 (https=)

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KR102002441B1 (ko) 2017-01-17 2019-07-23 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
JP7610346B2 (ja) * 2019-11-01 2025-01-08 テクセンドフォトマスク株式会社 反射型マスク及び反射型マスクの製造方法
JP7525354B2 (ja) * 2020-09-28 2024-07-30 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
US20220137500A1 (en) * 2020-10-30 2022-05-05 AGC Inc. Glass substrate for euvl, and mask blank for euvl
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
KR102638933B1 (ko) * 2021-09-28 2024-02-22 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 도전막을 구비한 기판
KR20250060932A (ko) 2023-03-17 2025-05-07 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판
WO2024195577A1 (ja) * 2023-03-17 2024-09-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよび導電膜付き基板

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TW583503B (en) * 2000-12-01 2004-04-11 Kansai Paint Co Ltd Method of forming conductive pattern
US20070037069A1 (en) * 2005-08-12 2007-02-15 Semiconductor Energy Laboratory Co., Ltd. Exposure mask
WO2007088795A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of memory element, laser irradiation apparatus, and laser irradiation method
EP2581789A1 (en) * 2011-10-14 2013-04-17 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
CN105452160A (zh) * 2013-03-15 2016-03-30 葛迪恩实业公司 在介质基板上直接制备石墨烯的方法以及相关的制品/装置

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US6737201B2 (en) 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
JP3939132B2 (ja) 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
JP5082857B2 (ja) 2005-12-12 2012-11-28 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板
US7678511B2 (en) 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
WO2008072706A1 (ja) 2006-12-15 2008-06-19 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
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JP6039207B2 (ja) * 2012-03-23 2016-12-07 Hoya株式会社 Ｅｕｖリソグラフィー用多層反射膜付き基板の製造方法及びｅｕｖリソグラフィー用反射型マスクブランクの製造方法、ｅｕｖリソグラフィー用反射型マスクの製造方法、及び半導体装置の製造方法
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Publication number Priority date Publication date Assignee Title
TW583503B (en) * 2000-12-01 2004-04-11 Kansai Paint Co Ltd Method of forming conductive pattern
US20070037069A1 (en) * 2005-08-12 2007-02-15 Semiconductor Energy Laboratory Co., Ltd. Exposure mask
WO2007088795A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of memory element, laser irradiation apparatus, and laser irradiation method
EP2581789A1 (en) * 2011-10-14 2013-04-17 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
US20140295330A1 (en) * 2011-10-14 2014-10-02 Institucio Catalana De Recerca I Estudis Avancats Optically transparent and electrically conductive coatings and method for their deposition on a substrate
CN105452160A (zh) * 2013-03-15 2016-03-30 葛迪恩实业公司 在介质基板上直接制备石墨烯的方法以及相关的制品/装置

Also Published As

Publication number Publication date
TW201928506A (zh) 2019-07-16
SG11202005918UA (en) 2020-07-29
US20210103209A1 (en) 2021-04-08
KR20200100604A (ko) 2020-08-26
JP7208163B2 (ja) 2023-01-18
US11561463B2 (en) 2023-01-24
WO2019131506A1 (ja) 2019-07-04
JPWO2019131506A1 (ja) 2020-12-10
KR102830574B1 (ko) 2025-07-07

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