JP7208163B2 - 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 - Google Patents

導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Download PDF

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JP7208163B2
JP7208163B2 JP2019561646A JP2019561646A JP7208163B2 JP 7208163 B2 JP7208163 B2 JP 7208163B2 JP 2019561646 A JP2019561646 A JP 2019561646A JP 2019561646 A JP2019561646 A JP 2019561646A JP 7208163 B2 JP7208163 B2 JP 7208163B2
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film
substrate
conductive film
conductive
layer
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JPWO2019131506A5 (https=
JPWO2019131506A1 (ja
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真徳 中川
勉 笑喜
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
JP2019561646A 2017-12-27 2018-12-21 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Active JP7208163B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017251163 2017-12-27
JP2017251163 2017-12-27
PCT/JP2018/047246 WO2019131506A1 (ja) 2017-12-27 2018-12-21 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Publications (3)

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JPWO2019131506A1 JPWO2019131506A1 (ja) 2020-12-10
JPWO2019131506A5 JPWO2019131506A5 (https=) 2022-07-22
JP7208163B2 true JP7208163B2 (ja) 2023-01-18

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JP2019561646A Active JP7208163B2 (ja) 2017-12-27 2018-12-21 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法

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Country Link
US (1) US11561463B2 (https=)
JP (1) JP7208163B2 (https=)
KR (1) KR102830574B1 (https=)
SG (1) SG11202005918UA (https=)
TW (1) TWI786243B (https=)
WO (1) WO2019131506A1 (https=)

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* Cited by examiner, † Cited by third party
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KR102002441B1 (ko) 2017-01-17 2019-07-23 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
JP7610346B2 (ja) * 2019-11-01 2025-01-08 テクセンドフォトマスク株式会社 反射型マスク及び反射型マスクの製造方法
JP7525354B2 (ja) * 2020-09-28 2024-07-30 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
US20220137500A1 (en) * 2020-10-30 2022-05-05 AGC Inc. Glass substrate for euvl, and mask blank for euvl
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
KR102638933B1 (ko) * 2021-09-28 2024-02-22 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 도전막을 구비한 기판
KR20250060932A (ko) 2023-03-17 2025-05-07 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판
WO2024195577A1 (ja) * 2023-03-17 2024-09-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよび導電膜付き基板

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JP2002222764A (ja) 2000-11-22 2002-08-09 Hoya Corp 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
JP2011228744A (ja) 2006-01-12 2011-11-10 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
JP2013225662A (ja) 2012-03-19 2013-10-31 Hoya Corp Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法
JP2015114356A (ja) 2013-12-09 2015-06-22 Hoya株式会社 機能膜付き基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法
JP2015215602A (ja) 2014-04-22 2015-12-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、該マスクブランク用の機能膜付基板および、それらの製造方法
US20170108766A1 (en) 2015-05-29 2017-04-20 Advanced Mask Technology Center Gmbh & Co. Kg Reflective photomask and reflection-type mask blank
JP2017102475A (ja) 2017-02-06 2017-06-08 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
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JP2002222764A (ja) 2000-11-22 2002-08-09 Hoya Corp 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
JP2011228744A (ja) 2006-01-12 2011-11-10 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
JP2013225662A (ja) 2012-03-19 2013-10-31 Hoya Corp Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法
JP2015114356A (ja) 2013-12-09 2015-06-22 Hoya株式会社 機能膜付き基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法
JP2015215602A (ja) 2014-04-22 2015-12-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、該マスクブランク用の機能膜付基板および、それらの製造方法
US20170363952A1 (en) 2014-12-19 2017-12-21 Hoya Corporation Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device
US20170108766A1 (en) 2015-05-29 2017-04-20 Advanced Mask Technology Center Gmbh & Co. Kg Reflective photomask and reflection-type mask blank
JP2017102475A (ja) 2017-02-06 2017-06-08 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク

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Publication number Publication date
TW201928506A (zh) 2019-07-16
TWI786243B (zh) 2022-12-11
SG11202005918UA (en) 2020-07-29
US20210103209A1 (en) 2021-04-08
KR20200100604A (ko) 2020-08-26
US11561463B2 (en) 2023-01-24
WO2019131506A1 (ja) 2019-07-04
JPWO2019131506A1 (ja) 2020-12-10
KR102830574B1 (ko) 2025-07-07

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