SG11202001447TA - Heteroepitaxial wafer and method for producing a heteroepitaxial wafer - Google Patents
Heteroepitaxial wafer and method for producing a heteroepitaxial waferInfo
- Publication number
- SG11202001447TA SG11202001447TA SG11202001447TA SG11202001447TA SG11202001447TA SG 11202001447T A SG11202001447T A SG 11202001447TA SG 11202001447T A SG11202001447T A SG 11202001447TA SG 11202001447T A SG11202001447T A SG 11202001447TA SG 11202001447T A SG11202001447T A SG 11202001447TA
- Authority
- SG
- Singapore
- Prior art keywords
- heteroepitaxial wafer
- producing
- heteroepitaxial
- wafer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17188124.6A EP3451364B1 (de) | 2017-08-28 | 2017-08-28 | Heteroepitaxialwafer und verfahren zur herstellung eines heteroepitaxialwafers |
PCT/EP2018/072229 WO2019042782A1 (en) | 2017-08-28 | 2018-08-16 | HETEROSEPITAXIAL TRENCH AND PROCESS FOR PRODUCING HETEROEPITATIVE TRENCH |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202001447TA true SG11202001447TA (en) | 2020-03-30 |
Family
ID=59738209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202001447TA SG11202001447TA (en) | 2017-08-28 | 2018-08-16 | Heteroepitaxial wafer and method for producing a heteroepitaxial wafer |
Country Status (8)
Country | Link |
---|---|
US (1) | US11869942B2 (de) |
EP (1) | EP3451364B1 (de) |
JP (1) | JP6995979B2 (de) |
KR (1) | KR102321952B1 (de) |
CN (1) | CN111052307B (de) |
SG (1) | SG11202001447TA (de) |
TW (1) | TWI678727B (de) |
WO (1) | WO2019042782A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI698914B (zh) * | 2019-07-19 | 2020-07-11 | 環球晶圓股份有限公司 | 半導體磊晶結構及其形成方法 |
US20220328678A1 (en) * | 2021-04-12 | 2022-10-13 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP7378562B2 (ja) * | 2021-10-27 | 2023-11-13 | 財團法人工業技術研究院 | 平衡応力を有する半導体基板 |
Family Cites Families (37)
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US7115896B2 (en) * | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
SG145706A1 (en) | 2005-02-02 | 2008-09-29 | Agency Science Tech & Res | Method and structure for fabricating iii-v nitride layers on silicon substrates |
CN102064091B (zh) * | 2006-02-23 | 2013-03-20 | 阿祖罗半导体股份公司 | 氮化物半导体部件及其制造工艺 |
US20080054248A1 (en) * | 2006-09-06 | 2008-03-06 | Chua Christopher L | Variable period variable composition supperlattice and devices including same |
JP5309452B2 (ja) | 2007-02-28 | 2013-10-09 | サンケン電気株式会社 | 半導体ウエーハ及び半導体素子及び製造方法 |
JP5477685B2 (ja) * | 2009-03-19 | 2014-04-23 | サンケン電気株式会社 | 半導体ウェーハ及び半導体素子及びその製造方法 |
JP5572976B2 (ja) * | 2009-03-26 | 2014-08-20 | サンケン電気株式会社 | 半導体装置 |
JP5634681B2 (ja) * | 2009-03-26 | 2014-12-03 | 住友電工デバイス・イノベーション株式会社 | 半導体素子 |
WO2011016304A1 (ja) | 2009-08-07 | 2011-02-10 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子用エピタキシャル基板の製造方法、および半導体素子 |
KR101358633B1 (ko) | 2009-11-04 | 2014-02-04 | 도와 일렉트로닉스 가부시키가이샤 | Ⅲ족 질화물 에피택셜 적층 기판 |
JP5545781B2 (ja) * | 2010-02-16 | 2014-07-09 | 日本碍子株式会社 | エピタキシャル基板およびエピタキシャル基板の製造方法 |
JP5706102B2 (ja) * | 2010-05-07 | 2015-04-22 | ローム株式会社 | 窒化物半導体素子 |
JP5616443B2 (ja) * | 2010-06-08 | 2014-10-29 | 日本碍子株式会社 | エピタキシャル基板およびエピタキシャル基板の製造方法 |
JP6018360B2 (ja) * | 2010-12-02 | 2016-11-02 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP5662184B2 (ja) * | 2011-02-01 | 2015-01-28 | 日本碍子株式会社 | 半導体素子用のエピタキシャル基板、および半導体素子用エピタキシャル基板の製造方法 |
FR2977260B1 (fr) * | 2011-06-30 | 2013-07-19 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
JP5665676B2 (ja) * | 2011-07-11 | 2015-02-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物エピタキシャル基板およびその製造方法 |
KR101813717B1 (ko) * | 2012-01-04 | 2017-12-29 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
US8742396B2 (en) * | 2012-01-13 | 2014-06-03 | Dowa Electronics Materials Co., Ltd. | III nitride epitaxial substrate and deep ultraviolet light emitting device using the same |
CN104126223A (zh) * | 2012-02-23 | 2014-10-29 | 日本碍子株式会社 | 半导体元件及半导体元件的制造方法 |
WO2013137476A1 (ja) | 2012-03-16 | 2013-09-19 | 次世代パワーデバイス技術研究組合 | 半導体積層基板、半導体素子、およびその製造方法 |
US8946773B2 (en) * | 2012-08-09 | 2015-02-03 | Samsung Electronics Co., Ltd. | Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure |
JP5892014B2 (ja) * | 2012-09-14 | 2016-03-23 | 沖電気工業株式会社 | 窒化物半導体装置及びその作製条件特定方法 |
JP5425284B1 (ja) * | 2012-09-21 | 2014-02-26 | 株式会社東芝 | 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法 |
US10256368B2 (en) * | 2012-12-18 | 2019-04-09 | Sk Siltron Co., Ltd. | Semiconductor substrate for controlling a strain |
US8981382B2 (en) * | 2013-03-06 | 2015-03-17 | Iqe Rf, Llc | Semiconductor structure including buffer with strain compensation layers |
JP6126906B2 (ja) * | 2013-05-14 | 2017-05-10 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハ |
JP6121806B2 (ja) * | 2013-06-07 | 2017-04-26 | 株式会社東芝 | 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法 |
JP6270536B2 (ja) * | 2013-06-27 | 2018-01-31 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法 |
KR102188493B1 (ko) * | 2014-04-25 | 2020-12-09 | 삼성전자주식회사 | 질화물 단결정 성장방법 및 질화물 반도체 소자 제조방법 |
US9112077B1 (en) * | 2014-04-28 | 2015-08-18 | Industrial Technology Research Institute | Semiconductor structure |
JP6180401B2 (ja) | 2014-11-25 | 2017-08-16 | サンケン電気株式会社 | エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法 |
US9806183B2 (en) | 2015-11-30 | 2017-10-31 | Veeco Instruments, Inc. | Stress control on thin silicon substrates |
US10586701B2 (en) * | 2016-02-26 | 2020-03-10 | Sanken Electric Co., Ltd. | Semiconductor base having a composition graded buffer layer stack |
CN106098749A (zh) * | 2016-06-30 | 2016-11-09 | 中国电子科技集团公司第五十五研究所 | 一种硅衬底上AlGaN/GaN异质结构及其生长方法 |
US10211297B2 (en) * | 2017-05-03 | 2019-02-19 | Globalwafers Co., Ltd. | Semiconductor heterostructures and methods for forming same |
TWI631668B (zh) * | 2017-11-22 | 2018-08-01 | 聯鈞光電股份有限公司 | 氮化物半導體結構 |
-
2017
- 2017-08-28 EP EP17188124.6A patent/EP3451364B1/de active Active
-
2018
- 2018-08-16 CN CN201880057884.0A patent/CN111052307B/zh active Active
- 2018-08-16 WO PCT/EP2018/072229 patent/WO2019042782A1/en active Application Filing
- 2018-08-16 SG SG11202001447TA patent/SG11202001447TA/en unknown
- 2018-08-16 KR KR1020207008513A patent/KR102321952B1/ko active IP Right Grant
- 2018-08-16 JP JP2020512014A patent/JP6995979B2/ja active Active
- 2018-08-16 US US16/643,003 patent/US11869942B2/en active Active
- 2018-08-20 TW TW107128973A patent/TWI678727B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN111052307A (zh) | 2020-04-21 |
US11869942B2 (en) | 2024-01-09 |
US20200203485A1 (en) | 2020-06-25 |
EP3451364B1 (de) | 2020-02-26 |
KR20200039007A (ko) | 2020-04-14 |
CN111052307B (zh) | 2023-10-03 |
JP2020532139A (ja) | 2020-11-05 |
JP6995979B2 (ja) | 2022-01-17 |
EP3451364A1 (de) | 2019-03-06 |
TWI678727B (zh) | 2019-12-01 |
KR102321952B1 (ko) | 2021-11-03 |
TW201913740A (zh) | 2019-04-01 |
WO2019042782A1 (en) | 2019-03-07 |
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