SG11201909484UA - Wafer-retaining elastic film of cmp device - Google Patents

Wafer-retaining elastic film of cmp device

Info

Publication number
SG11201909484UA
SG11201909484UA SG11201909484UA SG11201909484UA SG 11201909484U A SG11201909484U A SG 11201909484UA SG 11201909484U A SG11201909484U A SG 11201909484UA SG 11201909484U A SG11201909484U A SG 11201909484UA
Authority
SG
Singapore
Prior art keywords
wafer
cmp device
elastic film
retaining elastic
retaining
Prior art date
Application number
Other languages
English (en)
Inventor
Hiroaki Yasuda
Takehiro Hamamura
Shin Makino
Yuzuru Kubokura
Original Assignee
Mitsubishi Cable Industries Ltd
Akros Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Industries Ltd, Akros Co Ltd filed Critical Mitsubishi Cable Industries Ltd
Publication of SG11201909484UA publication Critical patent/SG11201909484UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D127/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers
    • C09D127/02—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment
    • C09D127/12—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C09D127/18—Homopolymers or copolymers of tetrafluoroethene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Paints Or Removers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG11201909484U 2017-04-13 2018-03-19 Wafer-retaining elastic film of cmp device SG11201909484UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017079588A JP6360586B1 (ja) 2017-04-13 2017-04-13 Ｃｍｐ装置のウエハ保持用の弾性膜
PCT/JP2018/010815 WO2018190079A1 (ja) 2017-04-13 2018-03-19 Ｃｍｐ装置のウエハ保持用の弾性膜

Publications (1)

Publication Number Publication Date
SG11201909484UA true SG11201909484UA (en) 2019-11-28

Family

ID=62904907

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909484U SG11201909484UA (en) 2017-04-13 2018-03-19 Wafer-retaining elastic film of cmp device

Country Status (7)

Country Link
US (1) US20210277272A1 (de)
EP (1) EP3611758B1 (de)
JP (1) JP6360586B1 (de)
KR (1) KR102575999B1 (de)
CN (1) CN110520971B (de)
SG (1) SG11201909484UA (de)
WO (1) WO2018190079A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102058877B1 (ko) * 2018-04-20 2019-12-24 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
JP2021030409A (ja) * 2019-08-29 2021-03-01 株式会社荏原製作所 弾性膜、および基板保持装置
KR20210061273A (ko) * 2019-11-19 2021-05-27 가부시키가이샤 에바라 세이사꾸쇼 기판을 보유 지지하기 위한 톱링 및 기판 처리 장치
JP7061144B2 (ja) * 2020-02-05 2022-04-27 三菱電線工業株式会社 弾性膜

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230866A (ja) * 1985-04-04 1986-10-15 Rodeele Nitta Kk 研磨用の基板ホルダ−およびそれから基板を脱離させる方法
JP2711302B2 (ja) 1988-07-21 1998-02-10 シンコー技研株式会社 ゴムシール材およびその製造方法
JP2634343B2 (ja) * 1991-10-28 1997-07-23 信越化学工業株式会社 半導体ウェーハの保持方法
DE59205500D1 (de) * 1992-03-12 1996-04-04 Siemens Ag Sigma-Delta-Modulator
TW400567B (en) * 1995-04-10 2000-08-01 Matsushita Electric Ind Co Ltd The polishing device and its polishing method for the substrate
JP3791060B2 (ja) 1996-08-08 2006-06-28 日新電機株式会社 ゴム・樹脂にダイヤモンド状炭素膜を形成する方法
CN1852787A (zh) * 2000-08-31 2006-10-25 多平面技术公司 化学机械抛光(cmp)头、设备和方法以及由此制造的平面化半导体晶片
JP4885364B2 (ja) * 2001-01-10 2012-02-29 スリーエム イノベイティブ プロパティズ カンパニー ワイピングフィルム
US20030124963A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Carrier head with a non-stick membrane
JP2004204146A (ja) * 2002-12-26 2004-07-22 Henkel Loctite Corp シリコーン樹脂組成物
JP4086722B2 (ja) * 2003-06-24 2008-05-14 株式会社荏原製作所 基板保持装置及び研磨装置
JP4193983B2 (ja) * 2003-08-27 2008-12-10 信越ポリマー株式会社 基板保持具
JP4867138B2 (ja) * 2004-06-04 2012-02-01 ダイキン工業株式会社 溶剤型塗料組成物
JP5112614B2 (ja) * 2004-12-10 2013-01-09 株式会社荏原製作所 基板保持装置および研磨装置
CN100468646C (zh) * 2005-02-02 2009-03-11 联华电子股份有限公司 化学机械研磨方法
JP5286084B2 (ja) * 2006-07-19 2013-09-11 積水化学工業株式会社 ダイシング・ダイボンディングテープ及び半導体チップの製造方法
CN101981666A (zh) * 2008-03-25 2011-02-23 应用材料公司 改良的承载头薄膜
CN102026775A (zh) * 2008-05-16 2011-04-20 东丽株式会社 研磨垫
JP5145131B2 (ja) * 2008-06-24 2013-02-13 信越半導体株式会社 研磨ヘッドの製造方法
JP2010182918A (ja) * 2009-02-06 2010-08-19 Go Iitoku 化学機械研磨機用のバッキングフィルム
US9017140B2 (en) * 2010-01-13 2015-04-28 Nexplanar Corporation CMP pad with local area transparency
JP5875950B2 (ja) * 2012-06-29 2016-03-02 株式会社荏原製作所 基板保持装置および研磨装置
JP5708596B2 (ja) * 2012-08-24 2015-04-30 コニカミノルタ株式会社 定着装置及び画像形成装置
JP3179929U (ja) * 2012-09-13 2012-11-22 株式会社吉田エス・ケイ・テイ 機能性シート部材
JP2017008255A (ja) * 2015-06-25 2017-01-12 リンテック株式会社 保護膜形成用複合シート、保護膜付きチップ、及び保護膜付きチップの製造方法
SG10201601379WA (en) * 2015-03-19 2016-10-28 Applied Materials Inc Retaining ring for lower wafer defects
JP6589766B2 (ja) * 2015-08-18 2019-10-16 信越化学工業株式会社 ウエハ加工用接着材、ウエハ積層体及び薄型ウエハの製造方法

Also Published As

Publication number Publication date
KR102575999B1 (ko) 2023-09-06
US20210277272A1 (en) 2021-09-09
JP2018182064A (ja) 2018-11-15
CN110520971B (zh) 2023-08-25
EP3611758B1 (de) 2021-10-27
KR20190140929A (ko) 2019-12-20
WO2018190079A1 (ja) 2018-10-18
EP3611758A1 (de) 2020-02-19
JP6360586B1 (ja) 2018-07-18
CN110520971A (zh) 2019-11-29
EP3611758A4 (de) 2020-03-18

Similar Documents

Publication Publication Date Title
SG11201909484UA (en) Wafer-retaining elastic film of cmp device
MY187247A (en) Low density polishing pad
MX2023007738A (es) Miembro deslizante de baja friccion.
AU201817882S (en) Electronic device
MY169665A (en) Silicone elastomer-hydrogel hybrid contact lenses
TW201612558A (en) Display device
AU201816314S (en) Electronic device
WO2019077502A3 (en) Stretchable film and surface coating composition
SA519401515B1 (ar) مخزن للطاقة
MX2019003548A (es) Dispositivo para asegurar una unidad electronica a un neumatico y un neumatico que comprende una unidad electronica.
MY187526A (en) Chemical-mechanical processing slurry and methods for processing a nickel substrate surface
SG11201902647VA (en) Thin film affixing device
MY188629A (en) Release film
MX2020003717A (es) Artículo abrasivo y método para elaborarlo.
MX2021002435A (es) Tablero para construccion con capa magnetica.
WO2015164105A3 (en) Articulated screen cover for accommodating objects
TW201611946A (en) Modifying substrate thickness profiles
SG11201908015QA (en) Non-magnetic substrate for magnetic disk, and magnetic disk
EP3542411C0 (de) Aktivmaterialschicht einer batterie und elektronische vorrichtung damit
MY186300A (en) Electrostatic chuck
AU2015203133B2 (en) Plastic bag making apparatus
MY195079A (en) A Circuit Layer For An Integrated Circuit Card
SG11201908764WA (en) Mask-integrated surface protective tape with release liner
TW201613752A (en) Polarizing plate, and image display device using the same
IN2013CH05964A (de)