SG11201909484UA - Wafer-retaining elastic film of cmp device - Google Patents

Wafer-retaining elastic film of cmp device

Info

Publication number
SG11201909484UA
SG11201909484UA SG11201909484UA SG11201909484UA SG 11201909484U A SG11201909484U A SG 11201909484UA SG 11201909484U A SG11201909484U A SG 11201909484UA SG 11201909484U A SG11201909484U A SG 11201909484UA
Authority
SG
Singapore
Prior art keywords
wafer
cmp device
elastic film
retaining elastic
retaining
Prior art date
Application number
Inventor
Hiroaki Yasuda
Takehiro Hamamura
Shin Makino
Yuzuru Kubokura
Original Assignee
Mitsubishi Cable Industries Ltd
Akros Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Industries Ltd, Akros Co Ltd filed Critical Mitsubishi Cable Industries Ltd
Publication of SG11201909484UA publication Critical patent/SG11201909484UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D127/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers
    • C09D127/02—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment
    • C09D127/12—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C09D127/18—Homopolymers or copolymers of tetrafluoroethene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Paints Or Removers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

C18-077 WAFER-RETAINING ELASTIC FILM OF CMP DEVICE A wafer-retaining elastic film (10) of a CMP device includes: a film body (11) comprised of an elastic material; and a coating layer (12) formed so as to cover the surface on the wafer retaining side of the film body (11). The coating layer (12) contains a polymeric 5 binder and nonmetallic particles dispersed in the polymeric binder.
SG11201909484U 2017-04-13 2018-03-19 Wafer-retaining elastic film of cmp device SG11201909484UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017079588A JP6360586B1 (en) 2017-04-13 2017-04-13 Elastic film for wafer holding of CMP apparatus
PCT/JP2018/010815 WO2018190079A1 (en) 2017-04-13 2018-03-19 Wafer-retaining elastic film of cmp device

Publications (1)

Publication Number Publication Date
SG11201909484UA true SG11201909484UA (en) 2019-11-28

Family

ID=62904907

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909484U SG11201909484UA (en) 2017-04-13 2018-03-19 Wafer-retaining elastic film of cmp device

Country Status (7)

Country Link
US (1) US20210277272A1 (en)
EP (1) EP3611758B1 (en)
JP (1) JP6360586B1 (en)
KR (1) KR102575999B1 (en)
CN (1) CN110520971B (en)
SG (1) SG11201909484UA (en)
WO (1) WO2018190079A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102058877B1 (en) * 2018-04-20 2019-12-24 에스케이씨 주식회사 POROUS POLYURETHANE POLISHING PAD and PREPARATION METHOD THEREOF
JP2021030409A (en) * 2019-08-29 2021-03-01 株式会社荏原製作所 Elastic film, and substrate holding device
KR20210061273A (en) * 2019-11-19 2021-05-27 가부시키가이샤 에바라 세이사꾸쇼 Top ring for holding a substrate and substrate processing apparatus
JP7061144B2 (en) * 2020-02-05 2022-04-27 三菱電線工業株式会社 Elastic membrane

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JP2711302B2 (en) 1988-07-21 1998-02-10 シンコー技研株式会社 Rubber sealing material and manufacturing method thereof
JP2634343B2 (en) * 1991-10-28 1997-07-23 信越化学工業株式会社 Semiconductor wafer holding method
EP0559944B1 (en) * 1992-03-12 1996-02-28 Siemens Aktiengesellschaft Sigma-Delta-modulator
TW353203B (en) * 1995-04-10 1999-02-21 Matsushita Electric Ind Co Ltd Apparatus for holding substrate to be polished
JP3791060B2 (en) 1996-08-08 2006-06-28 日新電機株式会社 Method for forming diamond-like carbon film on rubber and resin
CN101607381B (en) * 2000-08-31 2014-04-16 株式会社荏原制作所 Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby
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JP4086722B2 (en) * 2003-06-24 2008-05-14 株式会社荏原製作所 Substrate holding device and polishing device
JP4193983B2 (en) * 2003-08-27 2008-12-10 信越ポリマー株式会社 Board holder
JP4867138B2 (en) * 2004-06-04 2012-02-01 ダイキン工業株式会社 Solvent type paint composition
JP5112614B2 (en) * 2004-12-10 2013-01-09 株式会社荏原製作所 Substrate holding device and polishing device
CN100468646C (en) * 2005-02-02 2009-03-11 联华电子股份有限公司 Chemical-mechanical grinding method
JP5286084B2 (en) * 2006-07-19 2013-09-11 積水化学工業株式会社 Dicing die bonding tape and semiconductor chip manufacturing method
US20090242125A1 (en) * 2008-03-25 2009-10-01 Applied Materials, Inc. Carrier Head Membrane
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Also Published As

Publication number Publication date
EP3611758B1 (en) 2021-10-27
EP3611758A1 (en) 2020-02-19
JP6360586B1 (en) 2018-07-18
JP2018182064A (en) 2018-11-15
US20210277272A1 (en) 2021-09-09
WO2018190079A1 (en) 2018-10-18
KR20190140929A (en) 2019-12-20
KR102575999B1 (en) 2023-09-06
CN110520971A (en) 2019-11-29
CN110520971B (en) 2023-08-25
EP3611758A4 (en) 2020-03-18

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