CN101607381B - Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby - Google Patents
Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby Download PDFInfo
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- CN101607381B CN101607381B CN200910145946.6A CN200910145946A CN101607381B CN 101607381 B CN101607381 B CN 101607381B CN 200910145946 A CN200910145946 A CN 200910145946A CN 101607381 B CN101607381 B CN 101607381B
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Abstract
The invention relates to a chemical mechanical polishing head, an apparatus, a method and a planarized semiconductor wafer. The chemical mechanical polishing head and the method have a whole slurry distribution gear, a rotary fixed ring and a polishing head with a soft backing. In one embodiment, the apparatus includes a subcarrier with a flexible member attached to a lower substrate holding surface. The flexible member has hole(s) therein so that the pressurized fluid introduced between the flexible member and the subcarrier directly presses the substrate against the polishing surface. The subcarrier has a port adapted to draw vacuum on cavity between the lower surface and the flexible member. The invention also relates to a flexible member made of polymeric materials not reactive with the substrate and the chemicals applied in the polishing technology, and having a receiving surface for holding the back face of the substrate, wherein the flexible member has a hole communicated with the vacuum cavity and provided with adequate size for detecting the substrate on the receiving surface.
Description
The application is to be the divisional application that August 30 calendar year 2001, application number are 01818062.0, denomination of invention is the Chinese invention patent application of " chemically mechanical polishing (CMP) head, equipment and method and the planarized semiconductor wafer of manufacturing thus " applying date.
Technical field
The present invention relates to a kind of system, equipment and method of substrate being carried out to polishing and complanation, relate in particular to a kind of chemical-mechanical planarization or polishing (CMP) equipment and method.The invention still further relates to a kind of compliant member.
Background technology
Chemical-mechanical planarization or polishing are commonly referred to CMP, and it is a kind of method of the substrate of semiconductor and other types being carried out to complanation or polishing.Between certain procedure of processing, complanation being carried out in the surface of Semiconductor substrate or wafer can make more circuit layer be structured in vertically on device.Along with the reducing of characteristic size, the increase of density and the increase of semiconductor wafer sizes, it is further strict that the requirement of CMP process becomes.Take low cost fabrication semiconductor as starting point, the processing uniformity between wafer and the complanation uniformity on the whole surface of wafer are important problems.Due to more and more less (being conventionally about now 0.2 micron) of size of the structure on semiconductor wafer surface or feature, therefore the problem relevant to inhomogeneous complanation just becomes more serious.Sometimes this problem is called as inhomogeneous (WIWNU) problem in wafer.
In this field, known that a lot of reasons can cause even problem.These reasons are included in planarization to wafer and apply the mode of wafer backside pressure, due to the polishing pad edge effect heterogeneity that typical different interaction causes between the edge of wafer and the central area at wafer and in polishing process, can or adjust material and remove metal that profile compensate ideally and/or heteropical deposition of oxide layer by complanation.Up to now, wish that the effort simultaneously addressing these problems does not also obtain success completely.
About the character of wafer backside polish pressure, traditional machinery uses hard back rubbing head that wafer is pressed on polished surface conventionally, has the surperficial rubbing head of hard receiving and is directly pressed on the dorsal part of semiconductor wafer.As a result, rubbing head is received any variation on surface, or any material of holding back between wafer and receiving surface all can cause wafer backside to apply inhomogeneous pressure.Therefore the polished surface that, the front surface of wafer obtains with inhomogeneous plane conventionally does not conform to.In addition, the rubbing head design of this hard back must adopt relatively high polish pressure (for example about 6-8psi pressure limit) conventionally, to form any desirable uniformity between wafer and polished surface.This relatively high polish pressure is out of shape wafer effectively, causes the material that will remove from some region of wafer can be by too much removing, and from other regions, removes very few material, thereby forms bad complanation.
By providing an insert between the wafer of polishing receiving surface and want, attempt provides flexibility to a certain degree in hard back system, thereby attempts to make up the problem of the hard back of above-mentioned utilization rubbing head.This insert is commonly called wafer insert.These inserts also still have problems, because they cause machining deviation/variation conventionally, thereby bring the variation between wafer.This variation is not constant or normally uncertain.A factor of this variation is the absorption of other fluids of the water that uses in polishing process or for example slurries.Because the water yield that insert absorbs tends to exceed its life-span, therefore between wafer, often have process variations.By insert being immersed in before use in water or by change insert after the changing features of insert has exceeded acceptable limit, adjust in advance insert, this process variations can be controlled in limited degree.This tends to make the identical compared with after-stage of initial period of using and use, but this quantum of output that can improve the maintenance cost of equipment and reduce equipment.In addition, due to varied in thickness, the insert of for example insert and be trapped in hard back rubbing head and insert or insert and wafer between material wrinkling, also still can observe unacceptable process variations.
Use insert also to need the whole surface that insert is adhered to carry out meticulous control, because any inhomogeneous, the defect on rubbing head surface or depart from all conventionally can show as in the whole lip-deep flatness of wafer with flatness or the depth of parallelism any and change.For example, in traditional rubbing head, manufacture aluminium or ceramic wafer, then before installing, in rubbing head, grind and polishing.This manufacture process has increased the cost of rubbing head and machinery, if be especially provided with multiple rubbing heads.
On the other hand, when using soft back rubbing head, when wafer is pressed on rubbing head, the flexible material of insert can not make wafer distortion.As a result, can adopt less polish pressure, realize the uniformity of wafer front and polishing pad and not distortion, thereby can realize the polishing uniformity and good flatness.Can realize the inhomogeneity reason of better flatness at least partially in being identical at the polishing speed of the similar characteristics on wafer between mould.
In recent years, attempt to utilize soft back rubbing head, but they are not entirely satisfactory.A kind of soft back rubbing head is the U.S. Pat 6,019 as Shendon, and described in 671, its content is hereby incorporated by.Shendon proposes a kind of film stretching on the lower surface of rubbing head or compliant member, and to form chamber or cavity, it is pressurized and substrate is pressed on polished surface.Although utilize or do not utilize insert and hard back rubbing head has been made to significant improvement, this method is former thereby still can not make us being satisfied with completely because of several.A problem of this method is, it can not reduce or avoid being trapped in the heterogeneity that the material between film and wafer causes.Another problem is, this film has hindered and in load or unload operating process, wafer remained on rubbing head by vacuum.In addition, use film in fact because having introduced new variable, to increase heterogeneity, it is possible wrinkling that the thickness of for example film or flexibility cause at its whole lip-deep variation and unsuitable installation film.
Other soft back rubbing head design has utilized sealing between Waffer edge and rubbing head to form cavity, and this cavity is then pressurized and directly wafer is pressed on polished surface in polishing and planarization.A kind of method, described in the people's such as Breivogel U.S. Pat 5,635,083, is incorporated herein by reference herein.Breivogel proposes to use the lip packing on described wafer outer ledge, to form the sealing that can accept forced air between rubbing head and wafer.Unfortunately, although the soft rubbing head that this method provides has been avoided to hard back rubbing head with some relevant problems of the soft rubbing head of film, but it does not allow at wafer and receive between surface to form enough engagements, think that the wafer in the machinery of rubbing head rotation part in polishing operation provides moment of torsion.Another problem of this method is that, although can wafer be remained on rubbing head by vacuum, because wafer is only supported in edge, the bowing that therefore can produce unacceptable degree, causes damage or the loss of wafer.
About correction or the compensation of edge polishing effect, attempted to adjust the shape of retainer ring and improved retainer ring pressure, thereby having improved the amount at the material of removing from wafer near near part retainer ring.Conventionally, more material is removed from the edge of wafer, that is to say, the edge of wafer is by excessive polishing.In order to proofread and correct this excessive polishing, conventionally the pressure of retainer ring is adjusted into a little more than wafer backside pressure, thereby the polishing pad in this region is fixed slightly, ring compresses, and within the scope of several millimeters of retainer ring, from wafer, removes less material.But, even these trials neither make us being satisfied with completely because the complanation pressure on wafer outer ledge is only according to retainer ring pressure and Indirect method.The coverage of retainer ring compensating effect can not be extended to any distance in Waffer edge.It is all impossible adjusting separately the backside wafer pressure of retainer ring pressure, rim pressure or entirety and obtaining desirable effect.
In traditional C MP rubbing head another problem of retainer ring be any one point on retainer ring lower surface all in whole polishing operation corresponding remain on wafer on secondary carrier to certain portions.Therefore, the higher or lower point on retainer ring lower surface can cause the on-plane surface polishing of wafer.Although the lower surface of retainer ring can be processed and made it have high-flatness, this is a kind of selection of costliness, and especially, because retainer ring is an expendable element, it weares and teares along with the polishing of wafer, and must change continually.
About adjusting material, remove profile to adjust the hope of the non-homogeneous deposition of wafer of introducing, even if having method or the machinery of also seldom attempting carrying out this compensation.Non-homogeneous deposition may cause because of the circuit structure forming on wafer or because of the feature of sedimentary deposit.For example, it is thick and at the convex layer of thin edge that the copper layer that becomes more and more common in high speed integrated circuit is easy to be formed on center wafer.Therefore, wish a kind of finishing method and equipment, it can have at the center of wafer than the speed of removing higher at edge.
Traditional CMP equipment and last problem of method are invalid utilization and the waste of slurries.The normally chemically active liquid of slurries, has the grinding-material being suspended in wherein, the speed of removing from substrate surface for reinforcing material.Because on the polished surface of distribution of slurry before rubbing head, conventionally must distribute excessive slurries, to guarantee the understanding whole region between cover wafers and this surface when this slurry stream is crossed polished surface.Because the purity of slurries has strict requirement, especially the abrasive substance particle size wherein suspending is had to strict requirement, therefore slurries are normally expensive.In addition, for fear of polluting and consistent result being provided, slurries are circulation or recovery no longer again conventionally.Therefore a, cost that remarkable factor is slurries in the cost of the CMP equipment of operation with traditional.
Therefore, need to have a kind of equipment and method, it can provide excellent complanation, controls edge plane effect, and can adjust the removal profile of wafer material, to compensate the heterosphere deposition on wafer.Also needing has a kind of equipment and method, and it can utilize to soft back rubbing head provides vacuum that wafer is remained on rubbing head, makes the minimum pressure on wafer simultaneously or is eliminated.Also need a kind of CMP equipment, it can provide enough slurries and there is no excessive waste to polished surface.
Summary of the invention
The present invention relates to a kind of CMP system, equipment and method, for substrate is carried out to polishing and complanation, can on the whole surface of substrate, obtain the high complanation uniformity.The present invention includes and relate to the many aspects such as system, equipment, structure and the method for chemically mechanical polishing (CMP).In one aspect, the invention provides a kind of chemical-mechanical polisher and method, wherein there is a polished surface with non-homogeneous groove.In yet another aspect, the invention provides a kind of chemical mechanical polishing head and method, wherein there is overall distribution of slurry mechanism.In yet another aspect, the invention provides a kind of chemical-mechanical polisher and method, wherein there is the retainer ring of rotation.In yet another aspect, the invention provides a kind of chemical-mechanical polisher and method, wherein there is soft back rubbing head.In yet another aspect, the invention provides a kind of equipment and method, it can more effectively utilize slurries in polishing and planarization.In yet another aspect, the invention provides a workpiece, the semiconductor wafer of for example manufacturing by equipment of the present invention and method.
According to another aspect of the present invention, be provided for thering is the rubbing head of surperficial substrate orientation at the polished surface of polissoir, for process substrate, remove from it material.This rubbing head comprises a carrier, and this carrier has the compliant member (for example film) being arranged on its lower surface, and this compliant member is keeping substrate in polishing process.Compliant member has the receiving surface for accepting substrate thereon, and in receiving surface, extends through multiple holes of compliant member.When substrate remains on the receiving surface of compliant member, by lower surface, compliant member and the substrate of carrier, limited cavity or the chamber of a sealing.This cavity is used for pressurized and substrate is directly pressed in to polished surface at polishing process.Preferably, when carrier comprises driving mechanism with revolute carrier in polishing operation, the quantity in the plurality of hole and size are selected as between the receiving surface of compliant member and substrate, providing enough frictional force, think that substrate gives rotating energy.
In one embodiment, the lower surface of secondary carrier also comprises for pressure fluid being incorporated into the opening in cavity, and for pressure fluid being assigned to the passage in whole cavity.This opening also remains on substrate to receive surface in loading and uninstall process before polishing operation and afterwards for vacuumizing on cavity, and when polissoir also comprises the vacuum switch being connected with this opening, whether this opening remains on and receives on surface for detection of substrate.Vacuum switch is constituted as when reaching predetermined vacuum can be switched to closed condition from open mode, or is switched to open mode from closed condition.In a pattern of this embodiment, compliant member, substrate and opening are suitable for as a valve, with when reaching predetermined vacuum by opening and cavity isolation.When vacuumizing on cavity, the hole in compliant member is sealed by substrate, and this compliant member is inwardly taken out, until it contacts and be enclosed in the opening in secondary carrier lower surface.This opening can be with or without the lip limit of rising, so that sealing.This design can be controlled the deformation extent of vacuum level and the compliant member therefore causing and substrate, thereby makes the minimum pressure on substrate.
According to another aspect of the present invention, be provided for thering is the rubbing head of surperficial substrate orientation at the polished surface of polissoir, for process substrate, remove from it material.This rubbing head comprises carrier, by carrier, is carried and for keep the secondary carrier of substrate and the retainer ring round secondary carrier rotary setting at polishing operation.Retainer ring has the lower surface substantially concordant with the surface that remains on the substrate on secondary carrier, and the lower surface of retainer ring contacts in process with polished surface.Retainer ring deformation polishing surface, to reduce the speed of removing material from the edge of substrate.Utilize traditional carrier, any distortion in retainer ring lower surface or irregular meeting cause from substrate near the part of irregular edge higher or lower remove speed.But, utilize carrier of the present invention, because retainer ring can rotate with respect to substrate with respect to secondary carrier and therefore, therefore, in process, any distortion in retainer ring lower surface is minimum on the impact of removing the speed of material from edges of substrate.
In one embodiment, by a driving mechanism, drive secondary carrier, the frictional force between retainer ring and polished surface causes retainer ring to rotate with respect to secondary carrier.Or, can retainer ring be rotated with respect to secondary carrier by the independent driving mechanism being connected with retainer ring.
In another embodiment, carrier also comprises the gasket ring that becomes to face relation and separate by bearing with retainer ring with retainer ring upper surface.Gasket ring is for exerting pressure to retainer ring at polishing operation.Bearing can be for example ball bearing, hydrodynamic bearing, rolling bearing or cone bearing.Optional, retainer ring also comprises the first lip limit, when carrier, when polished surface raises, it is meshed with the second lip limit on gasket ring, so that retainer ring is connected on gasket ring.
According to another aspect of the present invention, provide and comprise for thering is the polissoir of surperficial substrate orientation at the rubbing head of the polished surface of polissoir, for process substrate, remove from it material.This rubbing head comprises carrier, and this carrier has the lower surface for keeping substrate at polishing process.In one embodiment, this carrier is provided with multiple openings that extend through basal surface round this lower surface, for polishing material is dispersed in to polished surface in operating process.Conventionally, this opening is for being dispersed in polished surface by the slurries that comprise abrasive material.Or while comprising fixing grinding agent on polished surface, this opening for example, for disperseing chemicals, water in polishing operation process on polished surface.Preferably, this opening is round the periphery of the annular space between retainer ring and secondary carrier and be evenly spaced apart.
In another embodiment, this opening is also for rinsing the annular space between retainer ring and secondary carrier in attended operation process.In this embodiment, CMP equipment comprise can to the plurality of opening provide slurries slurries supply department, can provide the flush fluid supply department of flush fluid and the valve for converting between slurries supply department and flush fluid supply department to the plurality of opening.
In yet another aspect, the present invention relates to a kind of polissoir, for the surface from substrate, remove material.Polissoir comprises the rubbing head for keep substrate in polishing operation process, and polished surface, this polished surface is with multiple grooves that distribute chemicals between substrate on rubbing head and polished surface that remaining on during for relative motion between substrate and polished surface.The plurality of groove has interval heterogeneous on whole polished surface, so that the variable bit rate of the removal material on whole polished surface to be provided.The interval of groove on whole polished surface is different in first area with at second area, to provide the different speed of removing in first area and second area.Conventionally, when first area has than the large groove density of second area in every linear dimension, first area have than second area low remove speed.In one embodiment, the plurality of groove is included in the groove radially on whole polished surface with non-homogeneous size or interval.Or groove can be included in multiple cavitys of opening or the depression in polished surface, its size and/or density change on whole polished surface.
Aspect another, the present invention relates to a kind of compliant member using in polissoir, this compliant member is a soft insert, described polissoir has rubbing head, this rubbing head is for having the polished surface of surperficial substrate orientation at polissoir, and comprise the carrier that is suitable for keeping substrate during polishing operation, this carrier has lower surface, described compliant member is made by the polymeric material not reacting with substrate and do not react with the chemicals using in glossing, described compliant member is fixed on described carrier and on the lower surface of described carrier and extends, one separator is arranged between described compliant member and described lower surface, to form a cavity between described compliant member and described lower surface, described carrier is provided with the passage being communicated with described lower surface, be used for pressure fluid to be incorporated in described cavity, described compliant member has for engaging described substrate so that the receiving surface on the polished surface that during polishing operation, substrate is pressed against to polissoir, it is characterized in that: described compliant member has a thickness and multiple this thickness that passes extends to described receiving surface to pressure is applied directly to the hole on described substrate, described hole and described channel connection.
The invention still further relates to a kind of compliant member using in polissoir, this compliant member is a soft insert, described polissoir has rubbing head, this rubbing head is for having the polished surface of surperficial substrate orientation at polissoir, and comprise the carrier that is suitable for keeping substrate during polishing operation, this carrier has lower surface, described compliant member is made by the polymeric material not reacting with substrate and do not react with the chemicals using in glossing, described compliant member is fixed on described carrier and on the lower surface of described carrier and extends, one separator is arranged between described compliant member and described lower surface, to form a cavity between described compliant member and described lower surface, described carrier is provided with the passage being communicated with described lower surface, be used for pressure fluid to be incorporated in described cavity, described compliant member has for engaging described substrate so that the receiving surface on the polished surface that during polishing operation, substrate is pressed against to polissoir, described compliant member comprises:
Thickness through described compliant member extends to the surperficial hole of described receiving, the lower surface of described carrier is provided with the opening vacuumizing on described cavity, when vacuumizing on described cavity, described compliant member is suitable for matching with the protruding lip in this opening, with by described opening and described cavity isolation, described hole is constructed to relative with described opening, and vacuum is applied directly to described substrate from described opening, to keep described substrate;
Wherein, described compliant member is made by EPDM, EPR, silicone or elastomeric material.
The invention still further relates to a kind of rubbing head using in polissoir, for having the polished surface of surperficial substrate orientation at polissoir, and comprise the carrier that is suitable for keeping substrate during polishing operation, this rubbing head comprises foregoing compliant member.
Accompanying drawing explanation
These and other features of the present invention can from below in conjunction with the detailed description of accompanying drawing, solve clearer.
Fig. 1 is the view that represents exemplary many rubbing heads polishing or planarization apparatus;
Fig. 2 is the sectional view that represents the rubbing head of one embodiment of the invention;
Fig. 3 is the plane of the part cut open along the 3-3 line of Fig. 2 of the rubbing head of Fig. 2, has shown an embodiment of compliant member of the present invention;
Fig. 4 is and the similar plane of Fig. 3 to represent another embodiment of compliant member of the present invention;
Fig. 5 is and the similar plane of Fig. 3 to represent another embodiment of compliant member of the present invention;
Fig. 6 is and the similar plane of Fig. 3 to represent another embodiment of compliant member of the present invention;
Fig. 7 is and the similar plane of Fig. 3 to represent another embodiment of compliant member of the present invention;
Fig. 8 is the sectional view of the rubbing head the according to one embodiment of present invention rubbing head of Fig. 2 cut open along the 8-8 line of Fig. 2;
Fig. 9 is the plane representing according to the secondary carrier lower surface of one embodiment of the invention, and this pair carrier has the lower surface of with groove;
Figure 10 is the partial cross section figure that represents the rubbing head with rotation fixed ring of one embodiment of the invention;
Figure 11 is the partial cross section figure that represents the rubbing head with integral dispensing mechanism of one embodiment of the invention, and this integral dispensing mechanism is for being dispersed in polished surface by chemicals;
Figure 12 is the partial cross section figure that represents the rubbing head with integral dispensing mechanism of another embodiment of the present invention, and this integral dispensing mechanism is for being dispersed in polished surface by chemicals by the annular space between retainer ring and secondary carrier;
Figure 13 A is the plane that represents to have according to one embodiment of the invention the polished surface of the groove that non-uniform spacing opens;
Figure 13 B is the partial cross section side view of the polished surface of presentation graphs 13A;
Figure 14 is the plane that represents to have another embodiment of the polished surface of the spiral grooves that non-uniform spacing opens;
Figure 15 is the plane that represents to have another embodiment of the polished surface of the spiral grooves that multiple non-uniform spacings open;
Figure 16 is the plane that represents to have another embodiment of the polished surface of the concentration ellipse groove that non-uniform spacing opens;
Figure 17 is the plane that represents to have the embodiment on the linear planarization surface of the parallel groove that non-uniform spacing opens;
Figure 18 is the partial cross section figure that represents to have according to one embodiment of the invention the polished surface of multiple even isolated grooves, and wherein said groove has the degree of depth heterogeneous;
Figure 19 is the partial cross section figure that represents to have according to one embodiment of the invention the polished surface of multiple even isolated grooves, and wherein said groove has width heterogeneous;
Figure 20 is the plane that represents to have according to one embodiment of the invention the polished surface of the cavity that non-uniform spacing opens;
Figure 21 represents according to one embodiment of the invention for substrate being carried out to the flow chart of the technique of polishing or complanation.
The specific embodiment
Provide a kind of substrate is carried out to improving one's methods of polishing or complanation and equipment.In the following description, provide multiple embodiment that comprise the details such as such as concrete structure, layout, material, shape.But clearly, for a person skilled in the art, the present invention can depart from these concrete details and implement, and method and apparatus of the present invention is not limited to this.With reference to figure 1, chemically mechanical polishing or complanation (CMP) equipment 100 for polished substrate 105 have been shown." polishing " used herein vocabulary shows substrate 105 carried out to polishing or complanation, and substrate comprises the substrate for flat-panel screens, solar cell, especially on it, has deposited Semiconductor substrate or the wafer of circuit.Semiconductor wafer normally thin with frangible dish, it typically has a diameter from 100mm-300mm.In general, the semiconductor wafer of 100mm, 200mm, 300mm is widely used in industry.Method and apparatus 100 of the present invention can at least reach for diameter semiconductor wafer and other substrates of 300mm and larger diameter.
For the sake of clarity, omitted known and be many details of CMP equipment 100 unrelated to the invention.The denomination of invention that the more detailed description of CMP equipment 100 is for example submitted on May 12nd, 2000 is the U. S. application 09/570,370 of " System and Method for Pneumatic Diaphragm CMP Having Separate Retaining Ring and Multi-Region Wafer Pressure Control "; The denomination of invention that on May 12nd, 2000 submits to is the U.S. Patent application 09/570,369 of " System and Method for CMP Having Multi-Pressure Zone Loading for Improved Edge and Annular Zone Material Removal Control "; And the denomination of invention that on May 12nd, 2000 submits to is the U.S. Provisional Application 60/204 of " System and Method for CMP Having Multi-Pressure Annular Zone Subcarrier Material Removal Control ", in 212, disclose, wherein each piece of writing is all hereby incorporated by.
A bridger 130 is also being supported in substrate 110, and this bridger is supporting rotating disk 135, and rotating disk 135 has one or more rubbing heads 140, and in polishing operation process, substrate 105 is maintained on rubbing head 140.Bridger 130 designed to be able to and raises and reduce rotating disk 135, with the surface that makes to remain on the substrate 105 on rubbing head 140, in polishing operation process, contacts with polished surface.The specific embodiment of the CMP equipment 100 shown in Fig. 1 is many rubbing head designs, and it means that each rotating disk 135 is had to multiple rubbing heads 140; But the CMP equipment 100 of single rubbing head is also known, rubbing head 140 of the present invention, polished surface 125 and the method for polishing can be for the polissoirs 100 of many rubbing heads or single rubbing head type.In addition, in this concrete CMP design, each rubbing head 140 is driven by single motor 142, and motor 142 chain drive-belts 145, then drive each rubbing head by chain and sprocket (not shown); But the embodiment that the present invention can all utilize independent motor and/or utilize other mechanisms except chain and sprocket type of drivers to rotate for each rubbing head 140.Except polishing pad 120 and rubbing head 140 rotations, rotating disk 135 can move to the track about the fixed center axis of polishing platen 115, to provide orbital motion to rubbing head.In addition, rubbing head 140 of the present invention can utilize all modes of CMP equipment 100, comprises and adopts the known linearity in this field or reciprocating machinery.
Now with reference to Fig. 2, one embodiment of rubbing head 140 of the present invention is described.With reference to Fig. 2, rubbing head 140 comprises for rubbing head being arranged on to an installation component 150 on rotating disk 135 and for substrate 105 being kept during polishing operation and being fixed on the carrier 155 on polished surface 125.Carrier 155 generally includes the retainer ring 170 that is keeping the secondary carrier 160 of substrate 105 and arranging round the secondary carrier of a part on circumference on its lower surface 165.
In operation, secondary carrier 160 and retainer ring 170 bias voltage or be pressed against on polished surface 125 independently, provides slurries and relative motion to polish this substrate simultaneously between substrate 105 and polished surface 125.Biasing force can provide by spring (not shown) or by the weight of secondary carrier 160 and retainer ring 170 self.Preferably, as shown in Figure 2, secondary carrier 160 and retainer ring 170 are pressed against on polished surface 125 by being introduced in the pressure fluid in enclosed cavity or the chamber 175,180 that lays respectively at secondary carrier 160 and retainer ring 170 tops.It is preferred using pressure fluid, because applied force is more even, and more easily changes, to regulate polishing or to remove speed.In general, institute's applied pressure in the scope of about 4.5-5.5psi, particularly 5psi.But these scopes are exemplary, because can adjust any pressure to the scope of about 8psi at about 2psi, to realize desired polishing or complanation effect.More preferably, the biasing force or the pressure that are applied on retainer ring 170 are greater than the power imposing on secondary carrier 160, so that polished surface 125 is out of shape a little, reduces thus so-called edge effect, thereby provide and remove more uniformly and planarization speed on the surface of substrate 105.Edge effect refers to because polished surface 125 and the speed of removing that the interaction of edges of substrate causes are greater than the trend in central portion office in the edge of substrate 105.By depressing and make it to be out of shape a little near the polished surface 125 substrate 105 edges, thereby this retainer ring 170 has reduced edges of substrate is pressed against the power on polished surface, thus part is removed to rate reduction to the level that more approaches the speed that equals other regions on this substrate surface.
According to the present invention, secondary carrier 160 can comprise a kind of insert (for example compliant member 185 or barrier film) of softness on lower surface 165, and it has the receiving surface 190 of receiving substrate 105 thereon.Compliant member 185 has such thickness, it has multiple opening or holes 195 of receiving surface 190 of extending to through this thickness, be used for pressure fluid (being at least part) to be applied directly to the back side of substrate 105, so that substrate is directly pressed against on polished surface 125.In general, institute's applied pressure, in the scope of about 2-8psi, is more generally approximately 5psi.Preferably, the number of selecting hole 195 and size, so that substrate 105 is directly exposed to the area maximum of pressure fluid, make enough areas of receiving surface 190 engage or contact with substrate 105, the moment from rubbing head 140 or rotational energy are imposed on to substrate during polishing operation simultaneously.The advantage of compliant member 185 of the present invention comprises: (i) by reducing particle, can be trapped in area wherein, thereby can reduce or eliminate, be stuck in particle or the impact of impurity on polishing uniformity of receiving between surface 190 and substrate 105; (ii) can reduce or eliminate due to the inhomogeneities in the wrinkling polishing causing of substrate; And (iii) can reduce or eliminate the polishing inhomogeneities causing due to the variation of compliant member 185 thickness.To compliant member 185 and hole wherein 195 or opening be illustrated in greater detail below.
In addition, retainer ring 170 can be suspended on the gasket ring 200 being positioned on carrier 155 rotationally, so that it can rotated with different speed with respect to the carrier 105 being positioned on secondary carrier 160 during polishing operation.Gasket ring 200 is used for to retainer ring 170, exerting pressure during polishing operation.The advantage that setting is arranged on substrate 105 retainer ring 170 around rotationally has two aspects.First, because substrate 105 and retainer ring 170 rotate with different speed, so neither one point is locking corresponding with a point on the edge of substrate during polishing operation on the lower surface 205 of retainer ring.Therefore, the high or low effect of removing in speed at edges of substrate place on the lower surface 205 of retainer ring 170 also will reduce even without eliminating, thereby suppress the surperficial on-plane surface polishing of substrate 105.The second, because the height on the lower surface 205 of retainer ring 170 and the effect of low spot have been reduced, so the lower surface 205 of this retainer ring needn't be polished to high flat degree, reduced thus the cost of manufacturing this retainer ring.In addition, because this retainer ring 170 is a kind of consumable article, along with substrate 105 is polished and wear and tear, so reduce the running cost in the useful life that the cost of this retainer ring can be reduced in CMP equipment 100 widely.To be described in detail rotation fixed ring 170 below.
Now with reference to Fig. 2 and Fig. 3 to Fig. 7, compliant member 185 is described, these drawings demonstrate each embodiment that receives surface 190 and hole therein 195.Refer again to Fig. 2, compliant member 185 is made by the polymeric material for example, not reacting with substrate 105 and the chemicals using in polishing operation or chemical substance (EPDM, EPR, silicone or rubber) conventionally, and stretch on the lower surface 165 of secondary carrier 160, and by annular or ring-shaped edge or bight annular element 210, separate with secondary carrier 160, thereby formation is by lower surface 165, bight annular element 210, the compliant member 185 of secondary carrier 160 with remain on the lower cavity 215 that the back side of the substrate 105 on the receiving surface 190 of compliant member 185 limits.By the passage 220 being connected with the opening 225 in the lower surface 165 of secondary carrier 160, pressure fluid is introduced in this lower cavity 215.Bight annular element 210 can by incompressible or substantially incompressible material (such as metal, rigid polymer material etc.) make; Or in order further to reduce edge effect, can such as, by compressible or elastomeric material (material such as flexible plastic, rubber, silicone), be made.
With reference to Fig. 3, this figure demonstrates the plane on the receiving surface 190 of compliant member 185 according to an embodiment of the invention.Demonstrate in the figure and multiplely receiving rule and isolated hole 195 symmetrically on surface 190.As mentioned above, the number in these holes 195 is chosen to be and makes to receive surface 190 areas that contact with substrate 105 to be enough to the moment of torsion from rubbing head 140 or rotational energy to impose on substrate with size, thereby this substrate is rotated during polishing operation.Have been found that receiving surface to have such surface area just can provide sufficient joint, wherein the gross area in these holes 195 is approximately the 50%-90% of this surface area, more preferably the 66%-75% of this surface area.In a preferred embodiment, these holes 195 can have the edge tilting with respect to the rotation direction of rubbing head 140, to strengthen this compliant member 185, thereby strengthen the joint between this compliant member 140 and substrate 105, increase thus moment of torsion.For example, have in the hole 195 of the shape shown in Fig. 3 and when clockwise direction rotates, will provide the joint of enhancing at rubbing head.
In Fig. 4 to Fig. 7, demonstrate optional structure and the pattern in the hole 195 in the receiving surface 190 of compliant member 185.
Fig. 4 is schematic illustration, it demonstrate have more regularly isolated still less, larger hole 195 and there is no the plane of the optional embodiment of the compliant member 185 of sloping edge.Fig. 5 is schematic illustration, and it demonstrates the plane of the optional embodiment of the compliant member 185 with a large amount of circular ports 195; Although in an illustrated embodiment, these holes 195 all have identical diameter, it being understood that without departing from the scope of the invention, and the size in these holes and number can change receiving on surface 190.Fig. 6 is schematic illustration, and it demonstrates the plane of another optional embodiment of the compliant member 185 with multiple humanoid or herringbone holes 195 that arrange round the receiving surface 190 of compliant member 185 on circumference.In addition,, although do not demonstrate, compliant member 185 can have and is positioned at inner and second ring in concentric hole 195 with it of the first orifice ring.Humanoid hole 195 in the second ring can be pointed to along the direction identical with first ring or along contrary direction.But, have been found that and make these humanoid holes along pointing to and can be increased in engaging between compliant member 185 and substrate 105 with the direction of the direction of rotation of rubbing head 140, thereby the moment of torsion of enhancing is provided.In Fig. 7, demonstrate the plane of another optional embodiment of this compliant member 185.In Fig. 7, these holes 195 comprise two relatively large openings or hole.In addition, although the circle of being shown as, these holes 195 can have any regular or irregularly shaped, for example polygon and ellipse, and each hole needn't have the shape identical with other hole or size.
With reference to Fig. 8, in another aspect of the present invention, protruding lip in the opening 225 in the lower surface 165 of secondary carrier 160 230 and the compliant member 185 on it with substrate 105 are applicable to when using opening 225 to vacuumize on lower cavity as the isolating valve 235 that opening 225 and lower cavity 215 are isolated.In polishing operation, the vacuum of extracting out on lower cavity 215 remains on substrate and receives on surface 190 when substrate does not contact with polished surface 225.For example,, during loading and unloading operation before polishing operation and afterwards.Thering is soft insert and adopt vacuum substrate to be kept the problem in the rubbing head of overhead prior art be, near the distortion of the insert producing (especially therein edges of substrate of the distortion maximum of insert from plane to concave shape) in substrate produces stress, and this can cause damage or the loss of whole substrate.According to the Working position that occurs loss, the loss meeting of Semiconductor substrate causes thousands of expenses.Therefore, an advantage of the present invention is, by being chosen in the isolation between compliant member 185 and the lip 230 of opening 225, thereby when realizing predetermined vacuum, can make this opening and lower cavity 215 isolate.This predetermined vacuum is selected to the power that provides enough, so that substrate 105 is remained on, receives on surface 190, reduces the distortion of compliant member 185 simultaneously, is reduced in thus the stress on substrate.Or, vacuum switch 240 or the converter of CMP equipment 100 shown in can also being included in Fig. 8 schematically, it is connected with opening 225 and is used for carrying out sensing substrate 105 in the existence of receiving on surface 190 by the state switching or be closed in while realizing predetermined vacuum.
As shown in Figure 8, size and the position in these holes 195 in compliant member can so be set, and to make the diameter of the hole 195A relative with opening 225 be less than this parameatal lip 230, and the edge seal in this hole leads to the opening of substrate 105.The advantage of this embodiment is, vacuum can be acted directly on substrate 105, and extracts out and eliminate at substrate and receive any air pocket between surface 190.Or in another embodiment (not shown), the size in these holes 195 and position can so be selected, to make the region substantially not disconnecting of this compliant member 185 facing to opening 225.The advantage of this embodiment is, reduces or has eliminated because the misalignment of hole 195 and opening 225 causes isolating valve 235 appearance possible fault arbitrarily.
In another embodiment as shown in Figure 2 and Figure 9, the lower surface 165 of secondary carrier 160 also includes distance piece 243, it has one or more groove or the guide groove 245 being arranged between opening 225 and the outside of lower cavity 215, so that emptying this lower cavity, and during polishing operation, be convenient to pressure fluid to be incorporated in lower cavity.This distance piece 243 can comprise by adhesive or the setting of machanical fastener (not shown) or be arranged on the isolated part on the lower surface 165 of substrate 160.Or as shown in Figure 9, the direct machined of these guide grooves 245 is formed in the lower surface 165 of secondary carrier 160, to form distance piece 243.Fig. 9 is schematic illustration, and it demonstrates the plane of the lower surface 165 of the secondary carrier 160 according to an embodiment of the invention with the isolated radially guide groove 245 of many symmetries.In another improvement project of this embodiment, isolation between bossing or platform 250 between compliant member 185 and the guide groove on lower surface 165 245 is selected, further to reduce the distortion of compliant member 185 when vacuumizing on lower cavity 215, thereby prevent overbending, and further reduce the stress on substrate.Many factors are depended in accurate isolation, size or the diameter on for example substrate 105 and receiving surface 190.Have been found that for the Semiconductor substrate 105 that is approximately 200 microns for diameter, suitable isolation should be less than about 100 microns.
Now with reference to Fig. 2 and Figure 10, rotation fixed ring 170 is described, these figure demonstrate the different embodiment of rotation fixed ring.Refer again to Fig. 2, this retainer ring 170 has the 260 one-tenth upper surfaces 255 in the face of relation of lower surface with grommet 200, and separates by bearing 260 and grommet.This bearing 260 can be ball bearing, hydrodynamic bearing, roller bearing or cone bearing.In the embodiment shown in Fig. 2 and Figure 10, bearing 260 is the roller bearings that have inside race or cartridge housing 265, many balls 270 and be formed on the outer race 275 in retainer ring 170.In addition, between retainer ring 170 and secondary carrier 160, be formed with little annular space 280, thereby they can relatively rotate with respect to each other during polishing operation.
Preferably, retainer ring 170 also comprises the mechanism for make it be connected with carrier 155 when polished surface 125 lifts at rubbing head 140.In the embodiment shown in Fig. 2, by the first lip 285 being positioned on retainer ring 170, realize this connection, this first lip rubbing head 140 when polished surface 125 lifts be positioned at the second lip 290 combinations grommet 200.In the embodiment shown in Figure 10, at carrier 155, when polished surface 125 lifts, use multiple bolts 295 to make the first lip 285 be formed as engaging with the second lip 290 being positioned at grommet 200, each bolt has the bar portion 300 being screwed in retainer ring 170 or cartridge housing 265 and has the head 305 radially outward stretching out from bar portion.Preferably, be provided with at least three isolated bolts 295 of the even circumferential round retainer ring 170, so that retainer ring is connected on grommet 200 firmly.
As mentioned above, rotation fixed ring 170 by reduce or eliminate high or low point on the lower surface 205 of retainer ring 170 be used in the lip-deep material removal rate of substrate 105 and the complanation at substrate, improve uniformity.Retainer ring 170 can rotate with respect to secondary carrier 160 by the frictional force between retainer ring and polished surface 125 during polishing operation, and described frictional force makes retainer ring and rotates slowlyer than the secondary carrier 160 being rotated by driving mechanism.Or retainer ring 170 can rotate by the second driving mechanism being attached thereto.This second driving mechanism can be the same as shown in Figure 10 individual motor 315, or the gear or chain and the sprocket transmission device that are connected with rubbing head driving mechanism (not shown).Rely on frictional force to make the advantage of this embodiment that retainer ring 170 rotates structurally simple and durable.Adopt the advantage of this embodiment of the second transmission mechanism to be to be controlled at the speed difference between substrate 105 and the retainer ring 170 remaining on secondary carrier 160, and can make retainer ring rotate along the direction contrary with secondary carrier.
In another aspect of the present invention, be provided with the rubbing head 140 with integral dispensing mechanism 320, be used for during polishing operation by chemicals or distribution of slurry to polished surface 125.For fear of polluting and consistent result being provided, slurries conventionally do not recycle or recycle.And, because in slurries purity and be especially suspended in the strict demand in the size of abrasive grain wherein, so the principal element in the cost of operation traditional C MP equipment 100 is the cost of slurries.A problem in traditional C MP equipment 100 is, because being assigned to, slurries are positioned on rubbing head 140 polished surface 125 above, so must distribute unnecessary slurries, to guarantee when it flows on polished surface 125 the whole region covering between substrate 105 and polished surface 125.Rubbing head 140 according to the present invention comprises along being circumferentially arranged on carrier 155 or round the multiple openings 325 in the retainer ring 170 of substrate 105, thereby guaranteed that the whole region between substrate and polished surface 125 is capped, and reduced or eliminated the waste of slurries.The size of opening 325 and quantity are selected, so that sufficient covering to be provided, and directly depend on the size of the substrate 105 of wanted polishing.In addition, the size of opening 325 is also selected, the viscosity of the concrete slurries that used to adapt to and particle size.For example, have been found that in order to be that the slurries that 1.5 centipoises and particle size are 100nm carry out polishing 20mm substrate 105 by viscosity, the opening that about 2-20 diameter is about 3-1mm is just enough.In an embodiment as shown in Figure 11, these slurries distribute from the even isolated opening 325 of the lower surface 205 round retainer ring 170.In another embodiment as shown in figure 12, opening 325 is arranged in the annular space 280 between retainer ring 170 and secondary carrier 160.Preferably, these openings 325 are evenly spaced apart round the annular space 280 between retainer ring 170 and secondary carrier 160.More preferably, this CMP equipment 100 also comprises flush fluid feeding mechanism 330, slurries feeding mechanism 335 and be used for the valve 340 switching between these two feeding mechanism, and these openings 325 are also applicable to during attended operation, rinsing the annular space 280 between retainer ring 170 and secondary carrier 160.
In one aspect of the method, the present invention relates to a kind of polished surface 125, it has multiple depressions concentrated unevenly on polished surface or groove, is used for being controlled at the lip-deep speed of removing of this substrate 105.As mentioned above, the groove in polished surface 125 is used for distributing chemicals or slurries between polished surface and the surface of substrate 105 disposed thereon.In general, these grooves can make multiple grooves 345 or multiple pit or depression 350, and they not necessarily have identical size, and not necessarily on polished surface 125, are evenly spaced apart.That is to say, these grooves comprise having on polished surface, to have unevenly spaced groove 345 or depression 350, or have irregular cross section long-pending groove 345 or depression 350.
With reference to Figure 13 A, polished surface 125 is for to be shaped as in an embodiment on discoidal rotatable surface therein, these grooves comprise many on polished surface the unevenly spaced concentric groove 345 with the even degree of depth and width of opening.Be noted that because these grooves 345 are less with respect to the width of polished surface 125, these grooves are shown as single solid line in Figure 13 A and in Figure 14,15,16 and 17 subsequently.These lines are used for just illustrating the setting of groove 345 on polished surface 125, and should not be interpreted as the information of the size that represents these grooves.In general, as shown at Figure 13 B, because the surface area that polished surface 125 contacts with substrate 105 in the region of these groove 345 apart from each others is larger, so the speed of removing in this region is greater than other region.Therefore, as by Figure 13 A with the same shown in dotted line 355 in 13B, arrange rubbing head 140 by the central authorities of substrate 105, provide than the edge that periodically moves through the region (or lower surface area) between these grooves with more intensive groove 345 higher remove speed.This has in the substrate of for example copper layer of multilayer material especially favourable in processing, because the characteristic of this material and deposition process easily has convex shape.For thering is the polished surface 125 of the groove 345 as shown at Figure 13 A, have been found that, the density of these grooves is changed to about 1 groove in second area from every radially about 20 grooves of linear inch first area, this removes the difference that forms at least 5% aspect speed between first area and second area, and first area remove speed lower than second area.
Figure 14 to 17 demonstrates optional structure and the pattern of the polished surface 125 for having multiple unevenly spaced grooves of opening 345.Figure 14 is schematic illustration, demonstrates the plane of an embodiment of the polished surface 125 with the single unevenly spaced spiral grooves of opening 345.This groove 345 coils by this way or is wound around, thereby form some regions like this, these regions provide the region having compared with low surface area (compared with low surface area) between by ectocentral groove and the edge of polished surface 125, and in the region between them, have higher surface area (high surface area).Figure 15 is schematic illustration, demonstrates the plane of an embodiment of the polished surface 125 with many unevenly spaced spiral grooves of opening 345.In addition, these grooves 345 spaced apart and be wound around, so that some regions to be like this provided, these regions provide the region having compared with low surface area between by ectocentral groove and the edge of polished surface 125, and have higher surface area in the region between them.Figure 16 is schematic illustration, demonstrates the plane of an embodiment of the polished surface 125 with many unevenly spaced concentration ellipse shape grooves 345 of opening.Figure 17 is schematic illustration, demonstrates the plane of an embodiment on the linear planarization surface 125 with many unevenly spaced parallel grooves of opening 345.It should be noted, in this embodiment, linear planarization surface 125 can be fixed linear surface, and rubbing head 140 moves above it, or is provided with above it rotating band (not shown).
Figure 18 to 20 demonstrates other optional design and the pattern for polished surface 125, and wherein the interval between these grooves is relatively even, and the size of these grooves is changed, so that the different speed of removing to be provided in zones of different.With reference to Figure 18, this figure provides the partial sectional view of an embodiment of the polished surface 125 with many even isolated grooves 345, and these grooves have consistent width and the inconsistent degree of depth.In this embodiment, and the surface area of the polished surface 125 that contacts of substrate 105 is constant between region, and to control what remove speed difference be the variable quantity that causes the slurries that enter this region due to the different depth of groove 345.This embodiment is for adopting the technique of the slurries with abrasive material, and can be especially in the technique of important component part of this glossing by the chemical reactivity of slurries therein.
Figure 19 is schematic illustration, demonstrates the fragmentary side cross-sectional view according to one embodiment of the invention with the polished surface 125 of the even unevenly isolated groove 345 of multiple width.The variation of the surface area contacting with substrate 105 as above, provides the difference of removing speed.Figure 20 is schematic illustration, and this figure demonstrates the plane of the polished surface 125 according to an embodiment of the invention with the inhomogeneous depression 350 of multiple even isolated sizes.Be noted that, the size and dimension of these depressions 350 shown in Figure 20 is just used for being illustrated, and size or the shape that should not be interpreted as these depressions are carried out any restriction, contrary its shape of these depressions can be regular or irregular, and its size can be that a part millimeter is to several millimeters.In addition the surface area contacting with substrate 105, changes to be provided in the difference of removing in speed.Although do not demonstrate, but it being understood that and can also utilize the depression 350 of the unevenly spaced size uniform of opening on polished surface 125 or utilize and there is the opening of size uniform and the even isolated depression of change in depth is realized removing variation aspect speed.
Now with reference to Figure 21, the method that operates CMP equipment 100 according to the present invention is described.In initial or load step, substrate 105 is placed on the receiving surface 190 of compliant member 185 (step 360).By opening 225, on lower cavity 215, vacuumize (step 365), until realized predetermined vacuum and this opening is isolated (step 370).Optionally, by the switching of the vacuum switch 105 that is connected with opening 225, carry out sensing substrate 105 in exist (step 375) of receiving on surface 190.Substrate 105 is arranged on polished surface 225 (step 380), and pressure fluid is incorporated in lower cavity 215, so that substrate is pressed against on polished surface 125 (step 385).For example water of a kind of chemicals or distribution of slurry, to (step 390) on polished surface 125, and are distributed between substrate 105 and polished surface (step 395) by the groove in polished surface.These grooves can be unevenly spaced groove 345 that open and/or that size is inhomogeneous or depression 350, so that the speed of removing of variation to be provided as mentioned above on polished surface 125.Between polished surface 125 and substrate 105, provide relative motion, with this substrate (step 400) of polishing.Optionally, make retainer ring 170 with respect to secondary carrier 160 and keep carrier 105 thereon to rotate with different speed, to reduce or to eliminate the high or low effect (step 405) of removing in speed on the lower surface 205 of retainer ring 170.In polishing, finish and after the rotation of rubbing head 140, retainer ring 170 and polishing pressing plate 115 stops, on lower cavity 215, again vacuumize (step 410), until realized predetermined vacuum (step 415), and this substrate 105 lifts (step 420) from polished surface 125.
Below repeat important aspects more of the present invention, further to emphasize their structure, function and advantage.
The present invention relates to a kind of rubbing head, for the polished surface at polissoir by the substrate orientation with surperficial.This rubbing head comprises carrier, by carrier, is carried and for keep the secondary carrier of substrate and the retainer ring round secondary carrier rotary setting at polishing operation.Retainer ring has the lower surface substantially concordant with the surface of substrate, and contacts in polishing operation with polished surface.Retainer ring can rotate with respect to remaining on the substrate on secondary carrier, thereby suppresses the on-plane surface polishing of substrate surface.
In one embodiment, secondary carrier can rotate and keep substrate thereon in polishing operation process, and retainer ring can be according to the speed rotation different from remaining on substrate on secondary carrier.
In another embodiment, carrier also comprises the gasket ring that becomes to face relation and separate by bearing with retainer ring with retainer ring upper surface.Gasket ring is for exerting pressure to retainer ring at polishing operation.Bearing can be for example ball bearing, hydrodynamic bearing, rolling bearing or cone bearing.Preferably, retainer ring also comprises the first lip limit, and when carrier, when polished surface raises, it is meshed with the second lip limit on gasket ring, so that retainer ring is connected on gasket ring.In a pattern of this embodiment, the first lip limit comprises multiple bolts, each bolt has bar part and head part, and head part is with the surface of radially outward giving prominence to from bar part, so that when carrier, when polished surface raises, it is meshed with the second lip limit on gasket ring.
In another embodiment, rubbing head also comprises the driving mechanism being connected with retainer ring, and this driving mechanism rotates retainer ring in polishing operation process with respect to secondary carrier.Or the frictional force between retainer ring and polished surface can make retainer ring rotate with respect to secondary carrier in polishing operation process.
Rubbing head of the present invention is used in particular for polissoir, for example CMP.Conventionally, this equipment also comprise polished surface and for polishing process by distribution of slurry the distribution of slurry mechanism on polished surface.Or this equipment has on it polished surface with fixed abrasive and for chemicals is distributed in to the chemicals distributor gear on polished surface at polishing operation.
In yet another aspect, provide a kind of method of utilizing polissoir to carry out polishing to having surperficial substrate, this polissoir has polished surface, be provided with the carrier of secondary carrier and be circumferential setting and have the retainer ring of lower surface with respect to secondary carrier.The method comprises the steps: substrate orientation on secondary carrier, and the surface of substrate is flushed with the lower surface of retainer ring substantially; The lower surface of the surface of substrate and retainer ring is pressed on polished surface, with the surface of polished substrate; And retainer ring is rotated with respect to secondary carrier, to suppress the on-plane surface polishing to substrate surface.The method is also included in polishing operation process rotation and remains on the step of the substrate on secondary carrier, and the step of rotation fixed ring, and this step comprises according to the step of the speed rotation fixed ring different from remaining on substrate on secondary carrier.
In one embodiment, the step of rotation fixed ring relates to utilizing by polished surface and acts on the step of the frictional force rotation fixed ring on retainer ring lower surface.Or polissoir also comprises the driving mechanism being connected with retainer ring, wherein the step of rotation fixed ring comprises the step of operation driving mechanism with rotation fixed ring.
In yet another aspect, rubbing head comprises for retainer ring rotation being fixed on to the parts on carrier, thereby rotating ring is rotated with respect to secondary carrier, therefore suppressed the polishing to substrate.In one embodiment, for the parts that make retainer ring rotation, retainer ring can be rotated according to the speed different from remaining on substrate on secondary carrier.
In another embodiment, carrier also comprises the gasket ring that becomes to face relation with the upper surface of retainer ring, to exert pressure to retainer ring in polishing operation process, makes retainer ring comprise with respect to the parts of substrate rotation the bearing that gasket ring and retainer ring are separated.
In another embodiment, rubbing head also comprises the driving mechanism being connected with retainer ring, and this driving mechanism rotates retainer ring in polishing operation process with respect to remaining on the substrate on secondary carrier.Or the frictional force between retainer ring and polished surface can make retainer ring rotate with respect to secondary carrier in polishing operation process.
The invention still further relates to a kind of for the rubbing head on the polished surface of polissoir by the substrate orientation with surperficial.This rubbing head comprises the carrier for keep substrate in polishing operation process.This carrier has lower surface, and the compliant member that is fixed on carrier and extends on whole lower surface, and bight annular element is set between compliant member and lower surface, to form cavity between compliant member and lower surface.Carrier is provided with the passage communicating with lower surface, for pressure fluid is incorporated in cavity.This compliant member have for the receiving surface of substrate engagement, thereby in polishing operation process, substrate is pressed on polished surface.Compliant member has certain thickness, and multiple this thickness that extends through leads to and receive surperficial hole, for directly to undercoat plus-pressure.Preferably, compliant member is also for sealing with the lip-deep substrate of receiving, so that it is pressurized to obtain cavity.
In one embodiment, carrier also comprises the secondary carrier being carried by this carrier, and compliant member is fixed on secondary carrier, and extends on the lower surface of secondary carrier.
In another embodiment, polissoir also comprises driving mechanism, for driving carrier in polishing operation process, the quantity in the plurality of hole and size should be between the receiving surface of compliant member and substrate enough frictional force are provided, thereby give rotating energy for substrate.
In another embodiment, the lower surface of carrier comprises the opening communicating with passage.This opening is for making the fluid of pressurization enter cavity in polishing operation process.In pattern of this embodiment, the lower surface of carrier also comprises at least one groove, for the fluid of pressurization is distributed in whole cavity.In another pattern, this opening is also for cavity is vacuumized, and compliant member and substrate be as valve, when forming predetermined vacuum by opening and cavity isolation.Preferably, this predetermined vacuum is chosen as and can before or after polishing operation, in loading and unloading operation, substrate is remained on and receive on surface.More preferably, polissoir also comprises the vacuum switch being connected with opening, and this predetermined vacuum is selected as switching vacuum switch when substrate remains on receiving surface.
Rubbing head of the present invention is particularly useful for polissoir, for example CMP.Conventionally this equipment also comprise polished surface and for polishing process by distribution of slurry the distribution of slurry mechanism on polished surface.Or this equipment has on it polished surface with fixed abrasive and for chemicals is distributed in to the chemicals distributor gear on polished surface at polishing operation.
In yet another aspect, provide a kind of method of utilizing polissoir to carry out polishing to having surperficial substrate, this polissoir has polished surface, is provided with the carrier of lower surface and extends past the compliant member of this lower surface.Compliant member has the surface of receiving and certain thickness, and multiple this thickness that extends through leads to the surperficial hole of receiving.The method comprises the steps: substrate orientation between carrier and polished surface, thereby this compliant member engages with substrate, and the surface of substrate leans against on polished surface; To compliant member, exert pressure, so that substrate is pressed on polished surface, polished substrate surface thus.This pressure passes hole, thereby acts directly on substrate.
In one embodiment, carrier also comprises the bight annular element being arranged between compliant member and lower surface, to form a cavity, the lower surface of carrier has for pressure fluid being incorporated into the opening in cavity, and the step of exerting pressure to compliant member comprises and makes pressure fluid enter cavity by this opening.Preferably, when polissoir also comprises for driving mechanism at polishing operation process rotating carrier, the method also comprises the step that moment of torsion is provided to substrate by compliant member.More preferably, the quantity and the size that extend through multiple holes of the thickness of compliant member should be selected as between the receiving surface of compliant member and substrate, providing enough frictional force, thereby to substrate, give rotating energy in polishing operation process.
In one embodiment, this opening is also for cavity is vacuumized, and the method also comprises the load step that cavity is vacuumized, and so that substrate is remained on, receives on surface.Preferably, the load step vacuumizing also relates to when reaching predetermined vacuum and utilizes compliant member and substrate as valve, opening and cavity isolation to be opened.More preferably, polissoir has the vacuum switch being connected with opening, and load step relates to when reaching predetermined vacuum by switching vacuum switch and detects substrate and receiving lip-deep existence.The method is also included in the unloading step after polishing operation, cavity being vacuumized, so that carrier was being remained on substrate and to be received on surface before polished surface rises.
In yet another aspect, polissoir for polished substrate is provided with for pressure fluid being applied directly to the parts on substrate, thereby substrate is pressed on polished surface, is also provided with the parts for rotating energy is transferred to substrate from carrier in polishing operation process.Preferably, for the parts that pressure fluid are applied directly on substrate, comprise the compliant member that is connected to carrier lower surface, in polishing operation process, substrate keeps thereon.Compliant member has the receiving surface for engaging substrate, and it has certain thickness, and multiple holes extend through this thickness and lead to receiving surface, for pressure is applied directly to substrate.More preferably, for the parts that rotating energy is transferred to substrate from carrier, comprise the receiving surface of compliant member, the quantity in the plurality of hole and size should be selected as between receiving surface and substrate, providing enough frictional force, and give rotating energy to substrate.
The invention still further relates to for the rubbing head on the polished surface of polissoir by the substrate orientation of belt surface, it has the carrier for keep substrate in polishing operation process.This carrier has lower surface, and the compliant member that is fixed on this carrier and extends on lower surface.Compliant member has the receiving surface for engaging substrate.This carrier be provided with extend lower surface for the opening of suction is provided, and near the bight annular element being arranged on opening between compliant member and lower surface.Compliant member has certain thickness, and extends through this thickness and lead to and receive surperficial hole, and this hole is aimed at opening substantially.Compliant member can move to the second place from primary importance, wherein near the lower surface this compliant member of primary importance and opening separates, at this compliant member of the second place, be meshed with parameatal lower surface, hole is aimed at opening at least partly, thereby can suction be provided and at least part of polishing operation process, substrate be remained on receiving surface to opening, spacer has substantially limited suction and only to a part of substrate, has applied thus, and it is minimum therefore making the undesirable stress on substrate remainder.Preferably, this compliant member for and receive the sealing of lip-deep substrate, cavity is vacuumized making.
In one embodiment, compliant member and substrate, as valve, opening and cavity are separated when reaching predetermined vacuum, have reduced thus the distortion of compliant member and have remained on the stress of receiving on lip-deep substrate.In a pattern of the present embodiment, spacer has the thickness that compliant member and the lower surface of carrier are separated, this thickness should be selected as can further reducing the distortion of compliant member when cavity is vacuumized, and has reduced thus and has remained on the stress of receiving on lip-deep substrate.In another pattern, polissoir also comprises the vacuum switch being connected with opening, when reaching predetermined vacuum, by switching vacuum switch, detects the existence of receiving the upper substrate in surface.
In another embodiment, polissoir also comprises for the driving mechanism at polishing operation process rotating carrier, and the size in hole is selected as providing enough frictional force on the receiving surface of compliant member and substrate centre, thereby gives rotation energy to substrate.
In another embodiment, the thickness that multiple holes extend through compliant member leads to receives surface.In a pattern of this embodiment, carrier also comprises the passage communicating with opening, for in polishing operation process, pressure fluid being incorporated in cavity, the plurality of hole is pressed in polished surface by the plurality of hole by substrate for making pressure fluid directly be applied to substrate in polishing operation process.In another pattern, polissoir is also included in the driving mechanism of rotating carrier in polishing operation process, and the quantity in hole and size are selected as in the middle of the receiving surface of compliant member and substrate, providing enough frictional force, and give rotation energy to substrate.
In yet another aspect, provide a kind of method, for utilizing polissoir to carry out polishing to the substrate with surperficial, this polissoir has polished surface and for keep the carrier of substrate at polishing process.This carrier has the lower surface of having fixed compliant member on it, and bight annular element is arranged between compliant member and lower surface, to form cavity between compliant member and lower surface.The lower surface of carrier is provided with the opening for cavity is vacuumized.Compliant member has the receiving surface for accepting substrate.Compliant member has certain thickness, and has at least one to extend through this thickness to lead to and receive surperficial opening.The method is included in to receive on surface accepts substrate, cavity is vacuumized to substrate is remained on carrier, and the surface of substrate is positioned on polished surface.The step of utilizing compliant member and substrate as valve, opening and cavity to be separated when the step preferably, cavity being vacuumized is included in the vacuum that reaches predetermined.More preferably, polissoir also comprises the vacuum switch being connected with opening, and the method also comprises when reaching predetermined vacuum and detecting in the step of receiving the existence of substrate on surface by switching vacuum switch.
The invention still further relates to a kind of for the rubbing head at the polished surface of polissoir by the substrate orientation of belt surface.This rubbing head comprises the carrier with basal surface.Basal surface comprises the lower surface for keep substrate in polishing operation process.This carrier is provided with multiple openings that extend through lower surface basal surface around, for polishing material being distributed in to polished surface in operating process.Conventionally, this opening is used for the distribution of slurry that comprises abrasive material at polished surface.Or the in the situation that of comprising fixed abrasive on polished surface, perforate is for fitting over polished surface at polishing operation by moisture.
In one embodiment, opening is arranged in retainer ring.
In another embodiment, carrier also comprises having the surperficial secondary carrier of receiving, and in polishing operation, substrate remains on and receives on surface, and retainer ring is about secondary carrier rotary setting, and separates by annular isolator and this pair carrier.In a pattern of this embodiment, in the annular space between retainer ring and secondary carrier, opening is set.Preferably, this opening evenly separates round the annular space between retainer ring and secondary carrier.More preferably, there is 20-30 opening.Most preferably, opening is also for rinsing the annular space between retainer ring and secondary carrier at attended operation.
Rubbing head of the present invention is particularly useful for polissoir, for example CMP.Conventionally this equipment also comprise polished surface and for polishing process by the distribution of slurry that comprises grinding-material the opening on polished surface.Or this polished surface has fixed abrasive on it, opening is for being distributed in polished surface by water at polishing operation.
In yet another aspect, provide a kind of method of utilizing polissoir to carry out polishing to having surperficial substrate, this polissoir has polished surface and band is useful on the carrier that keeps the basal surface of substrate in polishing operation process.The method comprises: substrate orientation, on the lower surface of carrier, is pressed to polished surface by carrier, thereby by the surface pressure of substrate on polished surface, and polishing material is distributed on polished surface by the basal surface of carrier.
In one embodiment, on polished surface, there is fixed abrasive, chemicals is distributed in to step on polished surface and comprises moisture is fitted over to the step on polished surface.Or this chemical-mechanical polisher also comprises slurries supply unit, can provide slurries to multiple openings, the step that chemicals is distributed on polished surface comprises the step on polished surface by distribution of slurry.In a pattern of this embodiment, polissoir also comprises flush fluid supply unit, can provide flush fluid to multiple openings, also comprise that the method is also included in the step of rinsing multiple openings after substrate polishing for carry out valve alternately between slurries supply unit and flush fluid supply unit.
In yet another aspect, for by the substrate orientation with surperficial, the rubbing head on the polished surface of polissoir is provided with for chemicals being distributed in to the parts polished surface from rubbing head in polishing operation process.
In one embodiment, for the parts that chemicals is distributed from rubbing head, comprise for the parts on polished surface by the distribution of slurry that comprises grinding-material.Or, on polished surface, there is fixing grinding agent, for the parts that chemicals is distributed from rubbing head, comprise for moisture being fitted over to the parts polished surface at polishing operation.
In another embodiment, for the parts that chemicals is distributed from rubbing head, comprise multiple openings that are arranged in retainer ring.Preferably, carrier also comprises that, with receiving surperficial secondary carrier, substrate remains on and receives on surface in polishing operation, and retainer ring rotatably arranges with respect to secondary carrier, and separates by annular space and this pair carrier.More preferably, opening is arranged in the annular space between retainer ring and secondary carrier.
The invention still further relates to a kind of for remove the polissoir of material from the surface of substrate.This polissoir comprises rubbing head and polished surface, this rubbing head is for keeping substrate in polishing operation process, polished surface is with multiple grooves, to have between substrate and polished surface between the substrate that remaining on when relatively moving on rubbing head and polished surface, distributes chemicals.The plurality of groove has interval heterogeneous on whole polished surface, the variable bit rate of removing with the material providing on whole polished surface.Interval at whole polished surface upper groove is different in first area and second area, thereby provides the different speed of removing in first area with at second area.
In one embodiment, the plurality of groove is included on polished surface along the groove radially with non-uniform spacing.In a pattern of this embodiment, groove has cross-sectional area heterogeneous.Preferably, on whole polished surface, the interval of multiple grooves is different in first area and second area, thus first area and second area provide at least 5% remove speed difference.More preferably, compared with second area, the quantity of groove more concentrates on first area, first area provide than second area low remove speed.The interval of the multiple grooves on polished surface becomes the every line in2 groove in second area from 0 groove of every line in2 in first area.Preferably, this groove has the basic degree of depth uniformly and basic width uniformly.Conventionally, first area has more groove on per inch than second area, first area provide than second area low remove speed.Groove can be parallel groove, concentric grooves, concentration ellipse groove, have the spiral grooves of the variable spacing on conveyor screw or in single spiral grooves.
Or this groove can be included in multiple openings hole or the depression in polished surface.
When having fixing grinding agent on polished surface, groove is for remaining on dispensing water between substrate on rubbing head and polished surface in polishing operation process.Or groove distributes for remaining in polishing operation process the slurries that contain grinding-material between substrate on rubbing head and polished surface.
In yet another aspect, provide a kind of polissoir, for the remove materials from substrate.This polissoir comprises the rubbing head for keep substrate at polishing process, and wherein has multiple multiple grooves that distribute chemicals between substrate on rubbing head and polished surface that remaining on when having relative motion between substrate and polished surface.This groove has size heterogeneous on whole polished surface, and it is different in first area and second area, to provide different material removal rate from first area to second area on polished surface.
In one embodiment, groove comprises multiple cavitys in polished surface, and the degree of depth of the plurality of cavity is different from first area to second area, so that the difference of removing speed to be provided between first area and second area.
In another embodiment, this groove comprises multiple cavitys in polished surface, each cavity has the cross section parallel with polished surface, the sectional area of each of the plurality of cavity is different from first area to second area, so that the difference of removing speed to be provided between first area and second area.
In another embodiment, this groove comprises multiple grooves with the degree of depth in polished surface, and the degree of depth of the plurality of groove is different from first area to second area, so that the difference of removing speed to be provided between first area and second area.
In another embodiment, this groove comprises multiple grooves in polished surface, each groove has certain width, and the width of the plurality of groove is different from first area to second area, so that the difference of removing speed to be provided between first area and second area.
In yet another aspect, a kind of method of polissoir from the remove materials of substrate of utilizing is provided, this polissoir has the rubbing head for keep substrate at polishing operation, and wherein has multiple multiple grooves that distribute chemicals between substrate on rubbing head and polished surface that remaining on when having relative motion between substrate and polished surface.This groove has interval heterogeneous on whole polished surface, thereby different material removal rate is provided on whole polished surface.The method comprises: by substrate orientation on rubbing head, by the surface pressure of substrate on polished surface, chemicals is distributed on polished surface, between substrate and polished surface, provides relative motion, with the surface from substrate, according to speed different on whole polished surface, remove material.
In one embodiment, the interval of the groove on whole polished surface is different from first area to second area, between substrate and polished surface, provide relative motion, to remove the step of material from the surface of substrate, be included in the different speed of removing is provided between first area and second area.
In another embodiment, this groove comprises multiple grooves with the essentially identical degree of depth and essentially identical width.
In another embodiment, this groove comprises multiple cavitys, and each cavity has the essentially identical degree of depth and the essentially identical cross section that is parallel to polished surface.
In another embodiment, the invention provides a kind of workpiece or substrate that utilizes device fabrication of the present invention, for example semiconductor wafer.
In another embodiment, bright a kind of workpiece or substrate that utilizes above-mentioned any method of the present invention or technique to manufacture, for example semiconductor wafer of providing of this law.
Be appreciated that, even if the present invention has proposed multiple feature and advantage of some embodiment in above stated specification, and the details of the 26S Proteasome Structure and Function of various embodiments of the present invention, but this is openly only illustrative, can in details, make variation, especially in concept of the present invention the structure to part and arrange aspect change.
Claims (7)
1. the compliant member (185) using in polissoir (100), this compliant member (185) is a soft insert, described polissoir (100) has rubbing head (140), this rubbing head (140) is for having surperficial substrate (105) and be positioned at the polished surface of polissoir (100), and comprise the carrier (155) that is suitable for keeping substrate (105) during polishing operation, this carrier (155) has lower surface (165), described compliant member (185) is made by the polymeric material not reacting with substrate and do not react with the chemicals using in glossing, described compliant member (185) is fixed on upper extension of described carrier (155) lower surface (165) upper and in described carrier (155), one separator is arranged between described compliant member (185) and described lower surface (165), to form a cavity between described compliant member (185) and described lower surface (165), described carrier (155) is provided with the passage (220) being communicated with described lower surface (165), be used for pressure fluid to be incorporated in described cavity, described compliant member (185) has for engaging described substrate (105) so that the receiving surface (190) on the polished surface (125) that during polishing operation, substrate (105) is pressed against to polissoir (100), it is characterized in that: described compliant member (185) has a thickness and multiple this thickness that passes extends to described receiving surface (190) to pressure is applied directly to the hole (195) on described substrate (105), described hole (195) is communicated with described passage (220).
2. compliant member as claimed in claim 1 (185), is characterized in that, described compliant member (185) is made by EPDM, EPR, silicone or elastomeric material.
3. the compliant member (185) using in polissoir (100), this compliant member (185) is a soft insert, described polissoir (100) has rubbing head (140), this rubbing head (140) is for having surperficial substrate (105) and be positioned at the polished surface of polissoir (100), and comprise the carrier (155) that is suitable for keeping substrate (105) during polishing operation, this carrier (155) has lower surface (165), described compliant member (185) is made by the polymeric material not reacting with substrate and do not react with the chemicals using in glossing, described compliant member (185) is fixed on upper extension of described carrier (155) lower surface (165) upper and in described carrier (155), one separator is arranged between described compliant member (185) and described lower surface (165), to form a cavity between described compliant member (185) and described lower surface (165), described carrier (155) is provided with the passage (220) being communicated with described lower surface (165), be used for pressure fluid to be incorporated in described cavity, described compliant member (185) has for engaging described substrate (105) so that the receiving surface (190) on the polished surface (125) that during polishing operation, substrate (105) is pressed against to polissoir (100), described compliant member (185) comprising:
Thickness through described compliant member (185) extends to the surperficial hole of described receiving (195A), the lower surface (165) of described carrier (155) is provided with the opening (225) for vacuumizing on described cavity, when vacuumizing on described cavity, described compliant member is suitable for matching with the protruding lip in this opening, with by described opening and described cavity isolation, described hole (195A) is constructed to relative with described opening (225), vacuum is applied directly to described substrate from described opening (225), to keep described substrate;
Wherein, described compliant member is made by EPDM, EPR, silicone or elastomeric material.
4. compliant member as claimed in claim 3 (185), it is characterized in that, by the opening (225) being communicated with the lower surface (165) of described carrier (155), vacuumize, and described compliant member (185) and described substrate (105) as one for make the valve of described opening (225) and described cavity isolation when realizing predetermined vacuum, with before polishing operation and afterwards load and unloading operation process in described substrate (105) is remained in described receiving surperficial (190).
5. the rubbing head using in polissoir (140), for thering is surperficial substrate (105) and be positioned at the polished surface of polissoir, and comprise the carrier (155) that is suitable for keeping substrate (105) during polishing operation, this rubbing head (140) comprising:
Compliant member (185) as described in claim 1 or 3.
6. rubbing head as claimed in claim 5 (140), it is characterized in that, described carrier (155) comprises the secondary carrier (160) by described carrier (155) carrying, described compliant member (185) is fixed on described secondary carrier (160), and above extend at the lower surface (165) of described secondary carrier (160), described compliant member (185) and described secondary carrier (160) are by bight annular element (210) separately, the lower surface (165) of described secondary carrier (160) comprises opening (225), described opening (225) is for the lower surface (165) by described secondary carrier (160), described bight annular element (210), on the cavity (215) that the lip-deep described substrate of receiving (105) of described compliant member (185) and described compliant member forms, vacuumize, and pressure fluid is introduced in described cavity (215) by the passage (220) being connected with the opening (225) in the lower surface (165) of described secondary carrier (160).
7. rubbing head as claimed in claim 6 (140), it is characterized in that, described compliant member (185), described substrate (105) and described opening (225) are suitable for as a valve, with when reaching predetermined vacuum by described opening (225) and cavity isolation, when vacuumizing on described cavity, hole (195) in described compliant member (185) is sealed by substrate (105), described compliant member (185) is inwardly taken out, until it contacts and is enclosed in the opening (225) in the lower surface (165) of described secondary carrier (160).
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65363600A | 2000-08-31 | 2000-08-31 | |
| US65296300A | 2000-08-31 | 2000-08-31 | |
| US09/652,854 US6540590B1 (en) | 2000-08-31 | 2000-08-31 | Chemical mechanical polishing apparatus and method having a rotating retaining ring |
| US09/652,855 | 2000-08-31 | ||
| US09/652,855 US6527625B1 (en) | 2000-08-31 | 2000-08-31 | Chemical mechanical polishing apparatus and method having a soft backed polishing head |
| US09/652,854 | 2000-08-31 | ||
| US09/652,963 | 2000-08-31 | ||
| US09/653,636 | 2000-08-31 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA018180620A Division CN1852787A (en) | 2000-08-31 | 2001-08-30 | Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101607381A CN101607381A (en) | 2009-12-23 |
| CN101607381B true CN101607381B (en) | 2014-04-16 |
Family
ID=37134137
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA018180620A Pending CN1852787A (en) | 2000-08-31 | 2001-08-30 | Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby |
| CN200910145946.6A Expired - Lifetime CN101607381B (en) | 2000-08-31 | 2001-08-30 | Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA018180620A Pending CN1852787A (en) | 2000-08-31 | 2001-08-30 | Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN1852787A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101413030B1 (en) * | 2009-03-24 | 2014-07-02 | 생-고벵 아브라시프 | Abrasive tool for use as a chemical mechanical planarization pad conditioner |
| US8360823B2 (en) * | 2010-06-15 | 2013-01-29 | 3M Innovative Properties Company | Splicing technique for fixed abrasives used in chemical mechanical planarization |
| US20140273756A1 (en) * | 2013-03-14 | 2014-09-18 | Chih Hung Chen | Substrate precession mechanism for cmp polishing head |
| US10328549B2 (en) * | 2013-12-11 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polishing head, chemical-mechanical polishing system and method for polishing substrate |
| JP6360586B1 (en) * | 2017-04-13 | 2018-07-18 | 三菱電線工業株式会社 | Elastic film for wafer holding of CMP apparatus |
| CN107650009B (en) * | 2017-11-20 | 2023-08-25 | 山东省科学院新材料研究所 | Novel wafer grinding and polishing machine |
| CN108098564B (en) * | 2017-12-20 | 2019-10-01 | 何银亚 | A kind of semiconductor crystal wafer chemical-mechanical polisher |
| CN113910072B (en) * | 2021-10-28 | 2022-11-22 | 华海清科股份有限公司 | Sucker turntable and wafer processing system |
| CN115008356B (en) * | 2022-07-20 | 2023-05-05 | 华侨大学 | Preparation method of soft and hard composite structure thinning grinding wheel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1190819A (en) * | 1997-09-01 | 1999-04-06 | United Microelectron Corp | Polishing head retaining ring of chemical-mechanical polishing machine |
| US5913712A (en) * | 1995-08-09 | 1999-06-22 | Cypress Semiconductor Corp. | Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing |
| CN1222429A (en) * | 1997-11-05 | 1999-07-14 | 阿普莱克斯公司 | Wafer carrier head with inflatable bladder and attack angle control for polishing |
| US6004193A (en) * | 1997-07-17 | 1999-12-21 | Lsi Logic Corporation | Dual purpose retaining ring and polishing pad conditioner |
-
2001
- 2001-08-30 CN CNA018180620A patent/CN1852787A/en active Pending
- 2001-08-30 CN CN200910145946.6A patent/CN101607381B/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5913712A (en) * | 1995-08-09 | 1999-06-22 | Cypress Semiconductor Corp. | Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing |
| US6004193A (en) * | 1997-07-17 | 1999-12-21 | Lsi Logic Corporation | Dual purpose retaining ring and polishing pad conditioner |
| JPH1190819A (en) * | 1997-09-01 | 1999-04-06 | United Microelectron Corp | Polishing head retaining ring of chemical-mechanical polishing machine |
| CN1222429A (en) * | 1997-11-05 | 1999-07-14 | 阿普莱克斯公司 | Wafer carrier head with inflatable bladder and attack angle control for polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1852787A (en) | 2006-10-25 |
| CN101607381A (en) | 2009-12-23 |
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