SG11201908804VA - Cleaning solution composition - Google Patents

Cleaning solution composition

Info

Publication number
SG11201908804VA
SG11201908804VA SG11201908804VA SG11201908804VA SG 11201908804V A SG11201908804V A SG 11201908804VA SG 11201908804V A SG11201908804V A SG 11201908804VA SG 11201908804V A SG11201908804V A SG 11201908804VA
Authority
SG
Singapore
Prior art keywords
cleaning
solution composition
cleaning solution
substrate
semiconductor substrate
Prior art date
Application number
Other languages
English (en)
Inventor
Yumiko Taniguchi
Areji Takanaka
Takuo Ohwada
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of SG11201908804VA publication Critical patent/SG11201908804VA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/004Surface-active compounds containing F
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/046Salts
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02Anionic compounds
    • C11D1/12Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/22Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/08Liquid soap, e.g. for dispensers; capsuled
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005Other compounding ingredients characterised by their effect
    • C11D3/0042Reducing agents
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2003Alcohols; Phenols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39Organic or inorganic per-compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/08Acids
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/18Glass; Plastics
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
SG11201908804V 2017-03-31 2018-03-05 Cleaning solution composition SG11201908804VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017071074 2017-03-31
PCT/JP2018/008378 WO2018180256A1 (ja) 2017-03-31 2018-03-05 洗浄液組成物

Publications (1)

Publication Number Publication Date
SG11201908804VA true SG11201908804VA (en) 2019-10-30

Family

ID=63675385

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908804V SG11201908804VA (en) 2017-03-31 2018-03-05 Cleaning solution composition

Country Status (9)

Country Link
US (1) US11046910B2 (ja)
EP (1) EP3605590B1 (ja)
JP (1) JP7173959B2 (ja)
KR (1) KR102475619B1 (ja)
CN (1) CN110462795A (ja)
MY (1) MY192579A (ja)
SG (1) SG11201908804VA (ja)
TW (2) TWI757441B (ja)
WO (2) WO2018180256A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102659845B1 (ko) * 2019-02-08 2024-04-24 엔테그리스, 아이엔씨. 세리아 제거 조성물
JP2020191365A (ja) * 2019-05-21 2020-11-26 花王株式会社 半導体デバイス用基板に用いる洗浄剤組成物
JP7316112B2 (ja) * 2019-06-25 2023-07-27 花王株式会社 基板の洗浄方法
JP7464432B2 (ja) 2019-11-13 2024-04-09 花王株式会社 半導体デバイス用基板に用いる洗浄剤組成物
KR20220061628A (ko) * 2020-11-06 2022-05-13 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
WO2023084861A1 (ja) * 2021-11-10 2023-05-19 三菱ケミカル株式会社 セリウム化合物除去用洗浄液、洗浄方法及び半導体ウェハの製造方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0183826B1 (ko) * 1996-03-04 1999-05-01 김광호 연마공정 후처리용 세정 용액 및 그를 이용하는 세정 방법
KR100190102B1 (ko) * 1996-10-19 1999-06-01 윤종용 세정 용액 및 이를 이용한 세정방법
JP2007053388A (ja) * 2000-01-24 2007-03-01 Mitsubishi Chemicals Corp 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
US7468105B2 (en) * 2001-10-16 2008-12-23 Micron Technology, Inc. CMP cleaning composition with microbial inhibitor
US7543592B2 (en) * 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
CN1639846A (zh) * 2002-01-28 2005-07-13 三菱化学株式会社 半导体器件用基板的清洗液及清洗方法
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
JP4252758B2 (ja) * 2002-03-22 2009-04-08 関東化学株式会社 フォトレジスト残渣除去液組成物
US7384870B2 (en) * 2002-05-31 2008-06-10 Hoya Corporation Method for manufacturing glass substrate
JP4336524B2 (ja) * 2002-05-31 2009-09-30 Hoya株式会社 情報記録媒体用ガラス基材の製造方法
JP4419528B2 (ja) 2003-01-07 2010-02-24 東ソー株式会社 洗浄液及びそれを用いた洗浄方法
JP4270544B2 (ja) * 2003-03-06 2009-06-03 花王株式会社 剥離剤組成物
EP1715510B2 (en) * 2004-02-09 2016-02-24 Mitsubishi Chemical Corporation Substrate cleaning liquid for semiconductor device and cleaning method
JP4744228B2 (ja) * 2004-08-10 2011-08-10 株式会社東芝 半導体基板洗浄液及び半導体基板洗浄方法
JP2006310603A (ja) * 2005-04-28 2006-11-09 Nissan Chem Ind Ltd ホウ素化合物を含む半導体用洗浄液組成物及び洗浄方法
US9058975B2 (en) * 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
JP4642001B2 (ja) * 2006-10-24 2011-03-02 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液組成物
TWI611047B (zh) * 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
JP2009099945A (ja) * 2007-09-28 2009-05-07 Fujifilm Corp 半導体デバイス用洗浄剤及びそれを用いた洗浄方法
US8168577B2 (en) * 2008-02-29 2012-05-01 Avantor Performance Materials, Inc. Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion
TWI460557B (zh) * 2008-03-07 2014-11-11 Wako Pure Chem Ind Ltd 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法
US9048088B2 (en) * 2008-03-28 2015-06-02 Lam Research Corporation Processes and solutions for substrate cleaning and electroless deposition
JP5561914B2 (ja) * 2008-05-16 2014-07-30 関東化学株式会社 半導体基板洗浄液組成物
SG172773A1 (en) 2008-12-19 2011-08-29 Sanyo Chemical Ind Ltd Cleaning agent for electronic materials
TWI488960B (zh) * 2008-12-22 2015-06-21 Fujifilm Corp 半導體裝置用洗淨液及洗淨方法
US20120065116A1 (en) 2009-05-21 2012-03-15 Stella Chemifa Corporation Cleaning liquid and cleaning method
JP2012079365A (ja) * 2010-09-30 2012-04-19 Konica Minolta Opto Inc 情報記録媒体用ガラス基板の製造方法
JP6014985B2 (ja) * 2010-10-01 2016-10-26 三菱化学株式会社 半導体デバイス用基板洗浄液及び洗浄方法
JP2012134357A (ja) 2010-12-22 2012-07-12 Hitachi Chem Co Ltd Cmp研磨液用洗浄液、これを用いた洗浄方法、並びにこれを用いた半導体基板の製造方法
JP5894369B2 (ja) 2011-02-03 2016-03-30 ステラケミファ株式会社 洗浄液及び洗浄方法
WO2013122172A1 (ja) * 2012-02-17 2013-08-22 三菱化学株式会社 半導体デバイス用洗浄液及び半導体デバイス用基板の洗浄方法
US9058976B2 (en) * 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
WO2015089023A1 (en) * 2013-12-11 2015-06-18 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
JP2016037569A (ja) * 2014-08-08 2016-03-22 日立化成株式会社 Cmp用研磨液及びこれを用いた研磨方法
KR102111307B1 (ko) * 2016-06-02 2020-05-15 후지필름 가부시키가이샤 처리액, 기판의 세정 방법 및 레지스트의 제거 방법
KR102055154B1 (ko) * 2016-07-29 2019-12-12 후지필름 가부시키가이샤 처리액 및 기판 세정 방법

Also Published As

Publication number Publication date
EP3605590A4 (en) 2021-01-13
MY192579A (en) 2022-08-29
JPWO2018180256A1 (ja) 2020-05-14
EP3605590A1 (en) 2020-02-05
TWI757441B (zh) 2022-03-11
CN110462795A (zh) 2019-11-15
TW201839838A (zh) 2018-11-01
US11046910B2 (en) 2021-06-29
TWI781999B (zh) 2022-11-01
KR102475619B1 (ko) 2022-12-07
WO2018181901A1 (ja) 2018-10-04
US20200017801A1 (en) 2020-01-16
WO2018180256A1 (ja) 2018-10-04
JP7173959B2 (ja) 2022-11-16
EP3605590B1 (en) 2024-05-22
WO2018180256A9 (ja) 2019-02-21
WO2018181901A9 (ja) 2019-02-07
TW201839831A (zh) 2018-11-01
KR20190127775A (ko) 2019-11-13

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