SG11201908617QA - Surface treatment methods and compositions therefor - Google Patents

Surface treatment methods and compositions therefor

Info

Publication number
SG11201908617QA
SG11201908617QA SG11201908617QA SG11201908617QA SG 11201908617Q A SG11201908617Q A SG 11201908617QA SG 11201908617Q A SG11201908617Q A SG 11201908617QA SG 11201908617Q A SG11201908617Q A SG 11201908617QA
Authority
SG
Singapore
Prior art keywords
international
go3f
pct
surface treatment
compositions therefor
Prior art date
Application number
Other languages
English (en)
Inventor
William A Wojtczak
Keeyoung Park
Atsushi Mizutani
Original Assignee
Fujifilm Electronic Materials Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials Usa Inc filed Critical Fujifilm Electronic Materials Usa Inc
Publication of SG11201908617QA publication Critical patent/SG11201908617QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/008—Temporary coatings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • C11D2111/22—

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Detergent Compositions (AREA)
  • Lubricants (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
  • Formation Of Insulating Films (AREA)
SG11201908617Q 2017-03-24 2018-03-22 Surface treatment methods and compositions therefor SG11201908617QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762476182P 2017-03-24 2017-03-24
US201862617688P 2018-01-16 2018-01-16
PCT/US2018/023697 WO2018175682A1 (fr) 2017-03-24 2018-03-22 Procédés de traitement de surface et compositions à cet effet

Publications (1)

Publication Number Publication Date
SG11201908617QA true SG11201908617QA (en) 2019-10-30

Family

ID=63581154

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908617Q SG11201908617QA (en) 2017-03-24 2018-03-22 Surface treatment methods and compositions therefor

Country Status (8)

Country Link
US (1) US10593538B2 (fr)
EP (1) EP3602606A4 (fr)
JP (2) JP7452782B2 (fr)
KR (1) KR102519448B1 (fr)
CN (1) CN110462525A (fr)
IL (1) IL269490B (fr)
SG (1) SG11201908617QA (fr)
WO (1) WO2018175682A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10941301B2 (en) * 2017-12-28 2021-03-09 Tokyo Ohka Kogyo Co., Ltd. Surface treatment method, surface treatment agent, and method for forming film region-selectively on substrate
IL275626B1 (en) 2018-01-05 2024-03-01 Fujifilm Electronic Mat Usa Inc Preparations and methods for surface treatment
KR102084164B1 (ko) * 2018-03-06 2020-05-27 에스케이씨 주식회사 반도체 공정용 조성물 및 반도체 공정
WO2019193967A1 (fr) * 2018-04-05 2019-10-10 セントラル硝子株式会社 Procédé de traitement de surface de plaquette et composition utilisée pour ledit procédé
US20200035494A1 (en) * 2018-07-30 2020-01-30 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
US11817310B2 (en) * 2018-11-22 2023-11-14 Central Glass Company, Limited Bevel portion treatment agent composition and method of manufacturing wafer
WO2021034491A1 (fr) * 2019-08-21 2021-02-25 Fujifilm Electronic Materials U.S.A., Inc. Compositions et procédés de traitement de surface
CN114269892B (zh) * 2019-08-27 2024-02-23 株式会社力森诺科 组合物、及粘接性聚合物的清洗方法
US20230282473A1 (en) 2020-05-21 2023-09-07 Central Glass Company, Limited Surface treatment method for semiconductor substrates and surface treatment agent composition
WO2023192000A1 (fr) * 2022-03-31 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Compositions et procédés de traitement de surface
US20240101929A1 (en) * 2022-09-14 2024-03-28 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032338B2 (ja) 1977-03-16 1985-07-27 太陽誘電株式会社 導電性塗料焼付電極を有する磁器コンデンサ
JPS54107442A (en) 1978-02-09 1979-08-23 Nippon Boshoku Kogyo Kk External source type* electrical corrosion preventive anode system for bottom portion of outdoor steel container
AU2001278890A1 (en) * 2000-07-10 2002-01-21 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
TW200409669A (en) 2002-04-10 2004-06-16 Dow Corning Ireland Ltd Protective coating composition
US7345000B2 (en) 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US7041226B2 (en) * 2003-11-04 2006-05-09 Lexmark International, Inc. Methods for improving flow through fluidic channels
US20070218811A1 (en) 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
KR101331747B1 (ko) 2005-01-27 2013-11-20 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 기판 처리 조성물
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
KR20160114736A (ko) 2008-10-21 2016-10-05 도오꾜오까고오교 가부시끼가이샤 표면 처리액 및 표면 처리 방법, 그리고 소수화 처리 방법 및 소수화된 기판
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
SG173043A1 (en) 2009-01-21 2011-08-29 Central Glass Co Ltd Silicon wafer cleaning agent
JP5324361B2 (ja) 2009-08-28 2013-10-23 東京応化工業株式会社 表面処理剤及び表面処理方法
JP5663160B2 (ja) 2009-09-28 2015-02-04 東京応化工業株式会社 表面処理剤及び表面処理方法
JP5680932B2 (ja) 2009-11-13 2015-03-04 東京応化工業株式会社 表面処理剤及び表面処理方法
JP5708191B2 (ja) 2010-05-19 2015-04-30 セントラル硝子株式会社 保護膜形成用薬液
SG185632A1 (en) 2010-06-07 2012-12-28 Central Glass Co Ltd Liquid chemical for foaming protecting film
US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
JP5716527B2 (ja) 2010-06-28 2015-05-13 セントラル硝子株式会社 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP2012033880A (ja) 2010-06-30 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液
JP2012015335A (ja) 2010-06-30 2012-01-19 Central Glass Co Ltd 保護膜形成用薬液、および、ウェハ表面の洗浄方法
US20130280123A1 (en) 2010-08-27 2013-10-24 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
US8828144B2 (en) * 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
US20120164818A1 (en) 2010-12-28 2012-06-28 Central Glass Company, Limited Process for Cleaning Wafers
JP6213616B2 (ja) * 2011-10-28 2017-10-18 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP5953721B2 (ja) 2011-10-28 2016-07-20 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP5288147B2 (ja) 2011-11-29 2013-09-11 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP5974514B2 (ja) * 2012-02-01 2016-08-23 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
JP5969253B2 (ja) 2012-02-10 2016-08-17 東京応化工業株式会社 表面処理剤及び表面処理方法
JP2013168583A (ja) 2012-02-16 2013-08-29 Toagosei Co Ltd 表面処理剤および表面処理方法
CN103007911B (zh) * 2012-12-01 2014-04-30 福州大学 一种表面处理剂用复合催化剂的制备方法
JP6221279B2 (ja) 2013-03-18 2017-11-01 富士通株式会社 レジスト組成物の製造方法及びパターン形成方法
JP6191372B2 (ja) 2013-10-04 2017-09-06 セントラル硝子株式会社 ウェハの洗浄方法
CN103773236B (zh) * 2014-01-17 2016-02-03 浙江大学 一种在基材表面制备防水防油型陶瓷涂料的方法
TWI596663B (zh) 2014-05-12 2017-08-21 東京威力科創股份有限公司 柔性奈米結構之乾燥的改善方法及系統
US9703202B2 (en) * 2015-03-31 2017-07-11 Tokyo Ohka Kogyo Co., Ltd. Surface treatment process and surface treatment liquid
US9976037B2 (en) * 2015-04-01 2018-05-22 Versum Materials Us, Llc Composition for treating surface of substrate, method and device
JP6592303B2 (ja) * 2015-08-14 2019-10-16 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄方法および基板洗浄装置
JP6681796B2 (ja) 2016-06-21 2020-04-15 東京応化工業株式会社 シリル化剤溶液、表面処理方法、及び半導体デバイスの製造方法
JP6310583B2 (ja) * 2017-02-10 2018-04-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN108250916A (zh) * 2017-12-29 2018-07-06 安徽鑫发铝业有限公司 一种汽车用铝型材表面处理工艺
IL275626B1 (en) 2018-01-05 2024-03-01 Fujifilm Electronic Mat Usa Inc Preparations and methods for surface treatment

Also Published As

Publication number Publication date
JP2023027033A (ja) 2023-03-01
KR102519448B1 (ko) 2023-04-07
JP2020512693A (ja) 2020-04-23
JP7452782B2 (ja) 2024-03-19
WO2018175682A1 (fr) 2018-09-27
TW201842148A (zh) 2018-12-01
US20180277357A1 (en) 2018-09-27
US10593538B2 (en) 2020-03-17
KR20190124795A (ko) 2019-11-05
CN110462525A (zh) 2019-11-15
EP3602606A1 (fr) 2020-02-05
EP3602606A4 (fr) 2020-02-05
IL269490A (en) 2019-11-28
IL269490B (en) 2022-06-01

Similar Documents

Publication Publication Date Title
SG11201908617QA (en) Surface treatment methods and compositions therefor
SG11201807077RA (en) Solid forms of a thienopyrimidinedione acc inhibitor and methods for production thereof
SG11201809540RA (en) Stripping compositions for removing photoresists from semiconductor substrates
SG11201407650VA (en) Composition and process for stripping photoresist from a surface including titanium nitride
SG11201908616PA (en) Cleaning compositions for removing residues on semiconductor substrates
SG11201901751QA (en) Methods for biobased derivatization of cellulosic surfaces
SG11201907034PA (en) Methods of treating influenza
SG11201807521WA (en) Advanced fluid processing methods and systems
SG11201906431UA (en) Method for the treatment of thromboembolism
SG11201806624XA (en) Deposition of molybdenum thin films using a molybdenum carbonyl precursor
SG11201901450QA (en) Methods of forming semiconductor device structures including two-dimensional material structures
SG11201804587QA (en) Isoindole compounds
SG11201906882RA (en) Cleaning formulations
SG11201809908TA (en) Stabilized glycopeptide antibiotic formulations
SG11201805001UA (en) Method of treating influenza a
SG11201809830WA (en) Selective reduction of cysteine-engineered antibodies
SG11202000136YA (en) Preparation comprising vonoprazan
SG11201809882XA (en) Pharmaceutical combinations for treating cancer
SG11201809561WA (en) 9-aminomethyl minocycline compounds and methods of use thereof in urinary tract infection (uti) treatment
SG11201804919TA (en) Glass substrate for chemical strengthening and method for chemically strengthening with controlled curvature
SG11201908327UA (en) Polishing compositions and methods of use thereof
SG11201903193WA (en) Deodorant comprisng a zinc carboxylate salt and aluminium chlorohydrate
SG11201906082XA (en) Patinated or patina-ready metal transaction cards and manufacturing processes
SG11201805367WA (en) Use of treating elements to facilitate flow in vessels
SG11201909840TA (en) Treatment of epithelial cysts by intracystic injection of antineoplastic particles