SG11201901299SA - Mask blank, transfer mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, transfer mask, and method of manufacturing semiconductor device

Info

Publication number
SG11201901299SA
SG11201901299SA SG11201901299SA SG11201901299SA SG11201901299SA SG 11201901299S A SG11201901299S A SG 11201901299SA SG 11201901299S A SG11201901299S A SG 11201901299SA SG 11201901299S A SG11201901299S A SG 11201901299SA SG 11201901299S A SG11201901299S A SG 11201901299SA
Authority
SG
Singapore
Prior art keywords
light
less
wavelength
mask blank
shielding film
Prior art date
Application number
SG11201901299SA
Other languages
English (en)
Inventor
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201901299SA publication Critical patent/SG11201901299SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
SG11201901299SA 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device SG11201901299SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016165550 2016-08-26
PCT/JP2017/028043 WO2018037863A1 (ja) 2016-08-26 2017-08-02 マスクブランク、転写用マスク及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
SG11201901299SA true SG11201901299SA (en) 2019-03-28

Family

ID=61246640

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10202007863UA SG10202007863UA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device
SG11201901299SA SG11201901299SA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device
SG10202000604QA SG10202000604QA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10202007863UA SG10202007863UA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202000604QA SG10202000604QA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (3) US11112690B2 (zh)
JP (3) JP6297766B1 (zh)
KR (3) KR102254035B1 (zh)
CN (3) CN114609856A (zh)
SG (3) SG10202007863UA (zh)
TW (3) TWI685880B (zh)
WO (1) WO2018037863A1 (zh)

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JP6932552B2 (ja) * 2017-05-31 2021-09-08 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
JP2020013100A (ja) * 2018-07-13 2020-01-23 エスアンドエス テック カンパニー リミテッド ブランクマスク、フォトマスク及びその製造方法
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KR102624206B1 (ko) * 2021-02-25 2024-01-15 인하대학교 산학협력단 ArF 위상반전 블랭크 마스크용 차광막 제조 방법 및 장치
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JP4930737B2 (ja) * 2011-09-21 2012-05-16 信越化学工業株式会社 フォトマスクブランク及びバイナリーマスクの製造方法
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JP6292581B2 (ja) 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
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Also Published As

Publication number Publication date
SG10202000604QA (en) 2020-03-30
US20230099176A1 (en) 2023-03-30
TWI727603B (zh) 2021-05-11
TWI765636B (zh) 2022-05-21
JP2019105858A (ja) 2019-06-27
US11543744B2 (en) 2023-01-03
JP2018109775A (ja) 2018-07-12
SG10202007863UA (en) 2020-10-29
KR20210059016A (ko) 2021-05-24
KR20210093383A (ko) 2021-07-27
KR102281354B1 (ko) 2021-07-26
TW202129707A (zh) 2021-08-01
JP6636664B2 (ja) 2020-01-29
KR20190021454A (ko) 2019-03-05
CN109643058B (zh) 2022-03-29
US20190204728A1 (en) 2019-07-04
JP6297766B1 (ja) 2018-03-20
CN114609856A (zh) 2022-06-10
WO2018037863A1 (ja) 2018-03-01
TWI685880B (zh) 2020-02-21
TW201820405A (zh) 2018-06-01
US20210373432A1 (en) 2021-12-02
KR102292434B1 (ko) 2021-08-20
KR102254035B1 (ko) 2021-05-20
JP6495496B2 (ja) 2019-04-03
TW202020938A (zh) 2020-06-01
CN114675486A (zh) 2022-06-28
CN109643058A (zh) 2019-04-16
JPWO2018037863A1 (ja) 2018-08-23
US11112690B2 (en) 2021-09-07

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