SG11201906154PA - Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device - Google Patents
Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201906154PA SG11201906154PA SG11201906154PA SG11201906154PA SG11201906154PA SG 11201906154P A SG11201906154P A SG 11201906154PA SG 11201906154P A SG11201906154P A SG 11201906154PA SG 11201906154P A SG11201906154P A SG 11201906154PA SG 11201906154P A SG11201906154P A SG 11201906154PA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- conductive film
- reflective mask
- reflective
- film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000001459 lithography Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Provided is a substrate with conductive film for fabricating a reflective mask capable of correcting misalignment of the reflective mask from the back surface with a 5 laser beam and the like. The substrate with conductive film is formed in which a conductive film is formed on one of the main surfaces of a mask blank substrate used in lithography, wherein an intermediate layer having a stress adjustment function is provided between the substrate and the conductive film, and transmittance of a laminated film including the intermediate layer and the conductive film for light having 10 a wavelength of 532 nm is not less than 20%.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017005773 | 2017-01-17 | ||
JP2017039100 | 2017-03-02 | ||
PCT/JP2018/000961 WO2018135468A1 (en) | 2017-01-17 | 2018-01-16 | Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201906154PA true SG11201906154PA (en) | 2019-08-27 |
Family
ID=62908221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201906154PA SG11201906154PA (en) | 2017-01-17 | 2018-01-16 | Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190369483A1 (en) |
JP (1) | JPWO2018135468A1 (en) |
KR (1) | KR20190102192A (en) |
SG (1) | SG11201906154PA (en) |
TW (1) | TW201842395A (en) |
WO (1) | WO2018135468A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190117745A (en) * | 2017-03-02 | 2019-10-16 | 호야 가부시키가이샤 | Reflective mask blanks, reflective masks and methods for manufacturing the same, and methods for manufacturing semiconductor devices |
TW202008073A (en) * | 2018-07-19 | 2020-02-16 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
US11137675B2 (en) | 2018-08-14 | 2021-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask and method for forming the same |
JP2020034666A (en) * | 2018-08-29 | 2020-03-05 | Hoya株式会社 | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device |
TW202141165A (en) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
US11300871B2 (en) * | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11829062B2 (en) * | 2020-05-22 | 2023-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV photo masks and manufacturing method thereof |
TW202202641A (en) | 2020-07-13 | 2022-01-16 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
JP7318607B2 (en) * | 2020-07-28 | 2023-08-01 | Agc株式会社 | Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and manufacturing method thereof |
JP2022054941A (en) * | 2020-09-28 | 2022-04-07 | 凸版印刷株式会社 | Reflection type photomask blank and reflection type photomask |
KR20220058424A (en) * | 2020-10-30 | 2022-05-09 | 에이지씨 가부시키가이샤 | Glass substrate for euvl, and mask blank for euvl |
US20220137500A1 (en) * | 2020-10-30 | 2022-05-05 | AGC Inc. | Glass substrate for euvl, and mask blank for euvl |
TWI833171B (en) * | 2021-03-29 | 2024-02-21 | 日商Hoya股份有限公司 | Photomask substrate, photomask manufacturing method and display device manufacturing method |
JP2023053673A (en) * | 2021-10-01 | 2023-04-13 | 信越化学工業株式会社 | Substrate with film for reflective mask blank, reflective mask blank, and method for manufacturing reflective mask |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4978626A (en) | 1972-12-02 | 1974-07-29 | ||
US4361473A (en) | 1981-10-28 | 1982-11-30 | Nova Biomedical Corporation | Potassium ion-selective membrane electrode |
JPS617829A (en) | 1984-06-22 | 1986-01-14 | Canon Inc | Driving method of liquid-crystal element |
JP4958147B2 (en) * | 2006-10-18 | 2012-06-20 | Hoya株式会社 | Reflective mask blank for exposure, reflective mask for exposure, substrate with multilayer reflective film, and method for manufacturing semiconductor device |
KR20140004057A (en) * | 2010-08-24 | 2014-01-10 | 아사히 가라스 가부시키가이샤 | Reflective mask blank for euv lithography |
WO2012105698A1 (en) * | 2011-02-04 | 2012-08-09 | 旭硝子株式会社 | Substrate with conductive film, substrate with multilayer reflection film, and reflective mask blank for euv lithography |
JP5949777B2 (en) * | 2011-10-28 | 2016-07-13 | 旭硝子株式会社 | Method for manufacturing a reflective mask blank for EUV lithography |
JP6186962B2 (en) * | 2013-07-08 | 2017-08-30 | 旭硝子株式会社 | Reflective mask blank for EUV lithography and reflective mask for EUV lithography |
JP6186996B2 (en) * | 2013-07-30 | 2017-08-30 | 旭硝子株式会社 | Reflective mask blank for EUV lithography and reflective mask for EUV lithography |
-
2018
- 2018-01-16 JP JP2018563327A patent/JPWO2018135468A1/en active Pending
- 2018-01-16 SG SG11201906154PA patent/SG11201906154PA/en unknown
- 2018-01-16 WO PCT/JP2018/000961 patent/WO2018135468A1/en active Application Filing
- 2018-01-16 US US16/477,801 patent/US20190369483A1/en not_active Abandoned
- 2018-01-16 KR KR1020197018485A patent/KR20190102192A/en not_active Application Discontinuation
- 2018-01-17 TW TW107101646A patent/TW201842395A/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20190369483A1 (en) | 2019-12-05 |
TW201842395A (en) | 2018-12-01 |
KR20190102192A (en) | 2019-09-03 |
JPWO2018135468A1 (en) | 2019-11-07 |
WO2018135468A1 (en) | 2018-07-26 |
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