SG11201906154PA - Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device - Google Patents

Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device

Info

Publication number
SG11201906154PA
SG11201906154PA SG11201906154PA SG11201906154PA SG11201906154PA SG 11201906154P A SG11201906154P A SG 11201906154PA SG 11201906154P A SG11201906154P A SG 11201906154PA SG 11201906154P A SG11201906154P A SG 11201906154PA SG 11201906154P A SG11201906154P A SG 11201906154PA
Authority
SG
Singapore
Prior art keywords
substrate
conductive film
reflective mask
reflective
film
Prior art date
Application number
SG11201906154PA
Inventor
Yohei IKEBE
Tsutomu Shoki
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201906154PA publication Critical patent/SG11201906154PA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Provided is a substrate with conductive film for fabricating a reflective mask capable of correcting misalignment of the reflective mask from the back surface with a 5 laser beam and the like. The substrate with conductive film is formed in which a conductive film is formed on one of the main surfaces of a mask blank substrate used in lithography, wherein an intermediate layer having a stress adjustment function is provided between the substrate and the conductive film, and transmittance of a laminated film including the intermediate layer and the conductive film for light having 10 a wavelength of 532 nm is not less than 20%.
SG11201906154PA 2017-01-17 2018-01-16 Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device SG11201906154PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017005773 2017-01-17
JP2017039100 2017-03-02
PCT/JP2018/000961 WO2018135468A1 (en) 2017-01-17 2018-01-16 Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201906154PA true SG11201906154PA (en) 2019-08-27

Family

ID=62908221

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201906154PA SG11201906154PA (en) 2017-01-17 2018-01-16 Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US20190369483A1 (en)
JP (1) JPWO2018135468A1 (en)
KR (1) KR20190102192A (en)
SG (1) SG11201906154PA (en)
TW (1) TW201842395A (en)
WO (1) WO2018135468A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201907622YA (en) * 2017-03-02 2019-09-27 Hoya Corp Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
TW202008073A (en) * 2018-07-19 2020-02-16 美商應用材料股份有限公司 Extreme ultraviolet mask absorber materials
US11137675B2 (en) 2018-08-14 2021-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Mask and method for forming the same
JP2020034666A (en) 2018-08-29 2020-03-05 Hoya株式会社 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
TW202141165A (en) 2020-03-27 2021-11-01 美商應用材料股份有限公司 Extreme ultraviolet mask absorber materials
US11300871B2 (en) * 2020-04-29 2022-04-12 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11829062B2 (en) * 2020-05-22 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. EUV photo masks and manufacturing method thereof
TW202202641A (en) 2020-07-13 2022-01-16 美商應用材料股份有限公司 Extreme ultraviolet mask absorber materials
JP7318607B2 (en) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and manufacturing method thereof
JP2022054941A (en) * 2020-09-28 2022-04-07 凸版印刷株式会社 Reflection type photomask blank and reflection type photomask
US20220137500A1 (en) * 2020-10-30 2022-05-05 AGC Inc. Glass substrate for euvl, and mask blank for euvl
KR20220058424A (en) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Glass substrate for euvl, and mask blank for euvl
TWI833171B (en) * 2021-03-29 2024-02-21 日商Ｈｏｙａ股份有限公司 Photomask substrate, photomask manufacturing method and display device manufacturing method
JP2023053673A (en) * 2021-10-01 2023-04-13 信越化学工業株式会社 Substrate with film for reflective mask blank, reflective mask blank, and method for manufacturing reflective mask

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4978626A (en) 1972-12-02 1974-07-29
US4361473A (en) 1981-10-28 1982-11-30 Nova Biomedical Corporation Potassium ion-selective membrane electrode
JPS617829A (en) 1984-06-22 1986-01-14 Canon Inc Driving method of liquid-crystal element
JP4958147B2 (en) * 2006-10-18 2012-06-20 Ｈｏｙａ株式会社 Reflective mask blank for exposure, reflective mask for exposure, substrate with multilayer reflective film, and method for manufacturing semiconductor device
KR20140004057A (en) * 2010-08-24 2014-01-10 아사히 가라스 가부시키가이샤 Reflective mask blank for euv lithography
JP5888247B2 (en) * 2011-02-04 2016-03-16 旭硝子株式会社 Substrate with conductive film, substrate with multilayer reflective film, and reflective mask blank for EUV lithography
JP5949777B2 (en) * 2011-10-28 2016-07-13 旭硝子株式会社 Method for manufacturing a reflective mask blank for EUV lithography
JP6186962B2 (en) * 2013-07-08 2017-08-30 旭硝子株式会社 Reflective mask blank for EUV lithography and reflective mask for EUV lithography
JP6186996B2 (en) * 2013-07-30 2017-08-30 旭硝子株式会社 Reflective mask blank for EUV lithography and reflective mask for EUV lithography

Also Published As

Publication number Publication date
WO2018135468A1 (en) 2018-07-26
JPWO2018135468A1 (en) 2019-11-07
KR20190102192A (en) 2019-09-03
US20190369483A1 (en) 2019-12-05
TW201842395A (en) 2018-12-01

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