SG11201810919UA - Engineered substrate structure for power and rf applications - Google Patents

Engineered substrate structure for power and rf applications

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Publication number
SG11201810919UA
SG11201810919UA SG11201810919UA SG11201810919UA SG11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA
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SG
Singapore
Prior art keywords
international
layer coupled
quora
santa clara
california
Prior art date
Application number
SG11201810919UA
Other languages
English (en)
Inventor
Vladimir Odnoblyudov
Cem Basceri
Shari Farrens
Original Assignee
Qromis Inc
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Filing date
Publication date
Application filed by Qromis Inc filed Critical Qromis Inc
Publication of SG11201810919UA publication Critical patent/SG11201810919UA/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
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    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/94—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Peptides Or Proteins (AREA)
SG11201810919UA 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications SG11201810919UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662350077P 2016-06-14 2016-06-14
US201662350084P 2016-06-14 2016-06-14
PCT/US2017/037252 WO2017218536A1 (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

Publications (1)

Publication Number Publication Date
SG11201810919UA true SG11201810919UA (en) 2019-01-30

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SG11201810919UA SG11201810919UA (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

Country Status (7)

Country Link
EP (1) EP3469119A4 (https=)
JP (5) JP6626607B2 (https=)
KR (1) KR102361057B1 (https=)
CN (2) CN109844184B (https=)
SG (1) SG11201810919UA (https=)
TW (5) TW202545359A (https=)
WO (1) WO2017218536A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017218536A1 (en) * 2016-06-14 2017-12-21 Quora Technology, Inc. Engineered substrate structure for power and rf applications
US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
US10622468B2 (en) 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
CN111987140B (zh) * 2019-05-21 2025-03-18 世界先进积体电路股份有限公司 基底及其制造方法
JP7319227B2 (ja) 2020-05-11 2023-08-01 信越化学工業株式会社 Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法
EP4163424A4 (en) 2020-06-09 2024-06-12 Shin-Etsu Chemical Co., Ltd. SUBSTRATE FOR EPITAXIAL GROWTH OF GROUP III NITRIDE AND METHOD FOR PRODUCTION THEREOF
JP7618401B2 (ja) 2020-07-01 2025-01-21 信越化学工業株式会社 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
KR102446604B1 (ko) * 2021-01-04 2022-09-26 한국과학기술원 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법
EP4289994A4 (en) 2021-02-05 2024-12-25 Shin-Etsu Handotai Co., Ltd. NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME
JP7549549B2 (ja) 2021-02-26 2024-09-11 信越半導体株式会社 窒化物半導体基板およびその製造方法
WO2022191079A1 (ja) * 2021-03-10 2022-09-15 信越化学工業株式会社 エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
US20250323037A1 (en) * 2021-06-08 2025-10-16 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for producing same
JP7643250B2 (ja) * 2021-08-10 2025-03-11 信越半導体株式会社 窒化物半導体基板及びその製造方法
US20240387170A1 (en) * 2021-09-21 2024-11-21 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for manufacturing same
JP7533794B2 (ja) * 2021-10-15 2024-08-14 信越半導体株式会社 窒化物半導体基板の製造方法
WO2023063046A1 (ja) * 2021-10-15 2023-04-20 信越半導体株式会社 窒化物半導体基板及びその製造方法
JP7755451B2 (ja) 2021-10-27 2025-10-16 信越化学工業株式会社 エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
US20250059676A1 (en) 2021-12-21 2025-02-20 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for producing nitride semiconductor substrate
JP7657530B2 (ja) 2021-12-28 2025-04-07 信越化学工業株式会社 高特性エピタキシャル成長用基板とその製造方法
JP7675679B2 (ja) 2022-03-18 2025-05-13 信越化学工業株式会社 高特性エピ用種基板、高特性エピ用種基板の製造方法、半導体基板、および半導体基板の製造方法
JP7768842B2 (ja) 2022-06-03 2025-11-12 信越化学工業株式会社 Ｉｉｉ族窒化物単結晶基板の製造方法
JP2024060665A (ja) * 2022-10-20 2024-05-07 信越半導体株式会社 窒化物半導体エピタキシャルウエーハの製造方法及び窒化物半導体エピタキシャルウエーハ用複合基板
JP7609154B2 (ja) * 2022-11-11 2025-01-07 信越半導体株式会社 高周波デバイス用基板およびその製造方法
CN116230643A (zh) * 2023-03-09 2023-06-06 东科半导体(安徽)股份有限公司 GaN器件用陶瓷基板及其制备方法和GaN器件及其制备方法
JP2025007662A (ja) 2023-07-03 2025-01-17 信越半導体株式会社 ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430149A (en) * 1981-12-30 1984-02-07 Rca Corporation Chemical vapor deposition of epitaxial silicon
US7238595B2 (en) * 2003-03-13 2007-07-03 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US6972255B2 (en) * 2003-07-28 2005-12-06 Freescale Semiconductor, Inc. Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
FR2871172B1 (fr) * 2004-06-03 2006-09-22 Soitec Silicon On Insulator Support d'epitaxie hybride et son procede de fabrication
JP4975974B2 (ja) 2005-03-18 2012-07-11 ラピスセミコンダクタ株式会社 Ｓｏｓウェハおよびその製造方法
US20060284167A1 (en) * 2005-06-17 2006-12-21 Godfrey Augustine Multilayered substrate obtained via wafer bonding for power applications
US7420226B2 (en) * 2005-06-17 2008-09-02 Northrop Grumman Corporation Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates
CN100424878C (zh) * 2006-11-21 2008-10-08 华中科技大学 铁电存储器用铁电薄膜电容及其制备方法
CN101192533B (zh) * 2006-11-28 2010-06-16 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、蚀刻阻挡层的形成方法
FR2912552B1 (fr) * 2007-02-14 2009-05-22 Soitec Silicon On Insulator Structure multicouche et son procede de fabrication.
US7732301B1 (en) * 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
KR101436116B1 (ko) * 2007-04-27 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판 및 그 제조 방법, 및 반도체 장치
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
CN101621005B (zh) * 2008-07-02 2012-08-22 中芯国际集成电路制造(上海)有限公司 Tft monos或sonos存储单元结构
JP4666189B2 (ja) 2008-08-28 2011-04-06 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US7915645B2 (en) * 2009-05-28 2011-03-29 International Rectifier Corporation Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same
CN102044473B (zh) * 2009-10-13 2013-03-06 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
US9012253B2 (en) * 2009-12-16 2015-04-21 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
US8981380B2 (en) 2010-03-01 2015-03-17 International Rectifier Corporation Monolithic integration of silicon and group III-V devices
KR20120020526A (ko) * 2010-08-30 2012-03-08 삼성전자주식회사 도전막 매립형 기판, 그 형성 방법, 및 이를 이용하는 반도체 소자의 제조 방법
CN102456721A (zh) * 2010-10-17 2012-05-16 金木子 陶瓷衬底的氮化镓基芯片及制造方法
US8546165B2 (en) * 2010-11-02 2013-10-01 Tsmc Solid State Lighting Ltd. Forming light-emitting diodes using seed particles
WO2012082729A1 (en) * 2010-12-14 2012-06-21 Hexatech, Inc. Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies, and application to the manufacture of semi-conductors
JP2012142385A (ja) * 2010-12-28 2012-07-26 Sumitomo Electric Ind Ltd 半導体デバイスの製造方法
WO2013094665A1 (ja) 2011-12-22 2013-06-27 信越化学工業株式会社 複合基板
US8916483B2 (en) * 2012-03-09 2014-12-23 Soitec Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum
JP6152548B2 (ja) 2012-08-06 2017-06-28 並木精密宝石株式会社 酸化ガリウム基板及びその製造方法
US9082692B2 (en) * 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
US9650723B1 (en) * 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
JP6176069B2 (ja) * 2013-11-13 2017-08-09 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、積層ｉｉｉ族窒化物複合基板、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
US9837363B2 (en) * 2014-07-04 2017-12-05 Mitsubishi Materials Corporation Power-module substrate unit and power module
JP2016058693A (ja) * 2014-09-12 2016-04-21 株式会社東芝 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法
JP6208646B2 (ja) 2014-09-30 2017-10-04 信越化学工業株式会社 貼り合わせ基板とその製造方法、および貼り合わせ用支持基板
US9997391B2 (en) * 2015-10-19 2018-06-12 QROMIS, Inc. Lift off process for chip scale package solid state devices on engineered substrate
KR102700750B1 (ko) * 2015-12-04 2024-08-28 큐로미스, 인크 가공된 기판 상의 와이드 밴드 갭 디바이스 집적 회로 아키텍처
WO2017218536A1 (en) * 2016-06-14 2017-12-21 Quora Technology, Inc. Engineered substrate structure for power and rf applications
US10483110B2 (en) 2016-07-26 2019-11-19 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device
CN109671612B (zh) 2018-11-15 2020-07-03 中国科学院上海微系统与信息技术研究所 一种氧化镓半导体结构及其制备方法

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