KR102361057B1 - 전력 및 rf 애플리케이션을 위한 가공된 기판 구조체 - Google Patents

전력 및 rf 애플리케이션을 위한 가공된 기판 구조체 Download PDF

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KR102361057B1
KR102361057B1 KR1020197000184A KR20197000184A KR102361057B1 KR 102361057 B1 KR102361057 B1 KR 102361057B1 KR 1020197000184 A KR1020197000184 A KR 1020197000184A KR 20197000184 A KR20197000184 A KR 20197000184A KR 102361057 B1 KR102361057 B1 KR 102361057B1
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layer
shell
epitaxial
silicon
teos
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KR20190019122A (ko
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블라디미르 오드노블류도브
셈 바세리
샤리 패런스
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큐로미스, 인크
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KR1020197000184A 2016-06-14 2017-06-13 전력 및 rf 애플리케이션을 위한 가공된 기판 구조체 Active KR102361057B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662350077P 2016-06-14 2016-06-14
US201662350084P 2016-06-14 2016-06-14
US62/350,084 2016-06-14
US62/350,077 2016-06-14
PCT/US2017/037252 WO2017218536A1 (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

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KR20190019122A KR20190019122A (ko) 2019-02-26
KR102361057B1 true KR102361057B1 (ko) 2022-02-08

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EP (1) EP3469119A4 (https=)
JP (5) JP6626607B2 (https=)
KR (1) KR102361057B1 (https=)
CN (2) CN109844184B (https=)
SG (1) SG11201810919UA (https=)
TW (5) TW202545359A (https=)
WO (1) WO2017218536A1 (https=)

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WO2017218536A1 (en) * 2016-06-14 2017-12-21 Quora Technology, Inc. Engineered substrate structure for power and rf applications
US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
US10622468B2 (en) 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
CN111987140B (zh) * 2019-05-21 2025-03-18 世界先进积体电路股份有限公司 基底及其制造方法
JP7319227B2 (ja) 2020-05-11 2023-08-01 信越化学工業株式会社 Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法
EP4163424A4 (en) 2020-06-09 2024-06-12 Shin-Etsu Chemical Co., Ltd. SUBSTRATE FOR EPITAXIAL GROWTH OF GROUP III NITRIDE AND METHOD FOR PRODUCTION THEREOF
JP7618401B2 (ja) 2020-07-01 2025-01-21 信越化学工業株式会社 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
KR102446604B1 (ko) * 2021-01-04 2022-09-26 한국과학기술원 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법
EP4289994A4 (en) 2021-02-05 2024-12-25 Shin-Etsu Handotai Co., Ltd. NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME
JP7549549B2 (ja) 2021-02-26 2024-09-11 信越半導体株式会社 窒化物半導体基板およびその製造方法
WO2022191079A1 (ja) * 2021-03-10 2022-09-15 信越化学工業株式会社 エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
US20250323037A1 (en) * 2021-06-08 2025-10-16 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for producing same
JP7643250B2 (ja) * 2021-08-10 2025-03-11 信越半導体株式会社 窒化物半導体基板及びその製造方法
US20240387170A1 (en) * 2021-09-21 2024-11-21 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for manufacturing same
JP7533794B2 (ja) * 2021-10-15 2024-08-14 信越半導体株式会社 窒化物半導体基板の製造方法
WO2023063046A1 (ja) * 2021-10-15 2023-04-20 信越半導体株式会社 窒化物半導体基板及びその製造方法
JP7755451B2 (ja) 2021-10-27 2025-10-16 信越化学工業株式会社 エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
US20250059676A1 (en) 2021-12-21 2025-02-20 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for producing nitride semiconductor substrate
JP7657530B2 (ja) 2021-12-28 2025-04-07 信越化学工業株式会社 高特性エピタキシャル成長用基板とその製造方法
JP7675679B2 (ja) 2022-03-18 2025-05-13 信越化学工業株式会社 高特性エピ用種基板、高特性エピ用種基板の製造方法、半導体基板、および半導体基板の製造方法
JP7768842B2 (ja) 2022-06-03 2025-11-12 信越化学工業株式会社 Ｉｉｉ族窒化物単結晶基板の製造方法
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