JP6626607B2 - 電力およびｒｆ用途用の設計された基板構造 - Google Patents

電力およびｒｆ用途用の設計された基板構造 Download PDF

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JP6626607B2
JP6626607B2 JP2018565352A JP2018565352A JP6626607B2 JP 6626607 B2 JP6626607 B2 JP 6626607B2 JP 2018565352 A JP2018565352 A JP 2018565352A JP 2018565352 A JP2018565352 A JP 2018565352A JP 6626607 B2 JP6626607 B2 JP 6626607B2
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layer
epitaxial
single crystal
crystal silicon
silicon
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JP2019523994A (ja
JP2019523994A5 (https=
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オドノブリュードフ，ウラジミール
バセリ，セム
ファーレンズ，シャリ
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クロミス，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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    • C30—CRYSTAL GROWTH
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
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    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/80—Constructional details
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Peptides Or Proteins (AREA)
JP2018565352A 2016-06-14 2017-06-13 電力およびｒｆ用途用の設計された基板構造 Active JP6626607B2 (ja)

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Application Number Priority Date Filing Date Title
US201662350077P 2016-06-14 2016-06-14
US201662350084P 2016-06-14 2016-06-14
US62/350,084 2016-06-14
US62/350,077 2016-06-14
PCT/US2017/037252 WO2017218536A1 (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

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JP2019523994A JP2019523994A (ja) 2019-08-29
JP2019523994A5 JP2019523994A5 (https=) 2019-11-28
JP6626607B2 true JP6626607B2 (ja) 2019-12-25

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JP2019217661A Active JP7001660B2 (ja) 2016-06-14 2019-12-01 電力およびｒｆ用途用の設計された基板構造
JP2021210164A Active JP7416556B2 (ja) 2016-06-14 2021-12-24 電力およびｒｆ用途用の設計された基板構造
JP2023161626A Active JP7631461B2 (ja) 2016-06-14 2023-09-25 電力およびｒｆ用途用の設計された基板構造
JP2025017456A Active JP7830722B2 (ja) 2016-06-14 2025-02-05 電力およびｒｆ用途用の設計された基板構造

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JP2021210164A Active JP7416556B2 (ja) 2016-06-14 2021-12-24 電力およびｒｆ用途用の設計された基板構造
JP2023161626A Active JP7631461B2 (ja) 2016-06-14 2023-09-25 電力およびｒｆ用途用の設計された基板構造
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EP (1) EP3469119A4 (https=)
JP (5) JP6626607B2 (https=)
KR (1) KR102361057B1 (https=)
CN (2) CN109844184B (https=)
SG (1) SG11201810919UA (https=)
TW (5) TW202545359A (https=)
WO (1) WO2017218536A1 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11387101B2 (en) 2016-06-14 2022-07-12 QROMIS, Inc. Methods of manufacturing engineered substrate structures for power and RF applications
KR20230020968A (ko) 2020-06-09 2023-02-13 신에쓰 가가꾸 고교 가부시끼가이샤 Iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법
KR20230031835A (ko) 2020-07-01 2023-03-07 신에쓰 가가꾸 고교 가부시끼가이샤 대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법
WO2023074045A1 (ja) 2021-10-27 2023-05-04 信越化学工業株式会社 エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
WO2023127249A1 (ja) 2021-12-28 2023-07-06 信越化学工業株式会社 高特性エピタキシャル成長用基板とその製造方法
WO2023176185A1 (ja) 2022-03-18 2023-09-21 信越化学工業株式会社 高特性エピ用種基板、高特性エピ用種基板の製造方法、半導体基板、および半導体基板の製造方法
KR20230153370A (ko) 2021-03-10 2023-11-06 신에쓰 가가꾸 고교 가부시끼가이샤 에피택셜 성장용 종기판 및 그 제조 방법, 그리고 반도체 기판 및 그 제조 방법
WO2023233781A1 (ja) 2022-06-03 2023-12-07 信越化学工業株式会社 Ｉｉｉ族窒化物単結晶基板の製造方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017218536A1 (en) * 2016-06-14 2017-12-21 Quora Technology, Inc. Engineered substrate structure for power and rf applications
US10622468B2 (en) 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
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