SG11201906657QA - Systems and methods for modulated image capture - Google Patents

Systems and methods for modulated image capture

Info

Publication number
SG11201906657QA
SG11201906657QA SG11201906657QA SG11201906657QA SG11201906657QA SG 11201906657Q A SG11201906657Q A SG 11201906657QA SG 11201906657Q A SG11201906657Q A SG 11201906657QA SG 11201906657Q A SG11201906657Q A SG 11201906657QA SG 11201906657Q A SG11201906657Q A SG 11201906657QA
Authority
SG
Singapore
Prior art keywords
node
international
modulating
voltage
primary charge
Prior art date
Application number
SG11201906657QA
Inventor
Jonne Poikonen
Ari Paasio
Mika Laiho
Original Assignee
Kovilta Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kovilta Oy filed Critical Kovilta Oy
Publication of SG11201906657QA publication Critical patent/SG11201906657QA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483Details of pulse systems
    • G01S7/486Receivers
    • G01S7/4861Circuits for detection, sampling, integration or read-out
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 27 September 2018 (27.09.2018) WIP0 I PCT omit IIl °nolo Ho 11011111° 1 ow (10) International Publication Number WO 2018/172610 Al (51) International Patent Classification: GO1S 7/486 (2006.01) HO1L 27/146 (2006.01) (21) International Application Number: PCT/FI2018/050195 (22) International Filing Date: 16 March 2018 (16.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 20170044 19 March 2017 (19.03.2017) FI (71) Applicant: KOVILTA OY [MI]; Piispanristintie 1, 20760 Piispanristi (FI). (72) Inventors: POIKONEN, Jonne; Kukkarokiventie 2, 21530 Paimio (FI). PAASIO, Ari; Hollanterintie 6 B, 20660 Littoinen (FI). LAIHO, Mika; Kavaljeerintie 31, 01520 Vantaa (FI). (74) Agent: MOOSEDOG OY; Rykmentintie 2B, 20810 Turku (FI). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: SYSTEMS AND METHODS FOR MODULATED IMAGE CAPTURE W O 20 18/ 17 26 10 Al (57) : Disclosed is a pixel element comprising a semiconduc- tor substrate, a primary charge-collection node, a peripheral node, a modulating node, a circuitry and a backside conductive layer. The semi- conductor substrate is configured to convert a flux of photons to first and second conductivity- type mobile charges. The peripheral node at least partially surrounds the primary charge-collection node, which at least partially surrounds the modulating node. The circuitry is used to connect and disconnect a reset voltage to/from the primary charge-col- lection node, provide a peripheral node voltage to the peripheral node, and measure an amount of the first conductivity-type mobile charges collected by the primary charge- collection node. The modulating node is electrically connected to a modulating voltage source, which is inde- pendent of the peripheral node voltage. The backside conductive lay- er is configured to collect and conduct the second conductivity-type mobile charges, and configured to be electrically connected to a bias voltage.
SG11201906657QA 2017-03-19 2018-03-16 Systems and methods for modulated image capture SG11201906657QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20170044 2017-03-19
PCT/FI2018/050195 WO2018172610A1 (en) 2017-03-19 2018-03-16 Systems and methods for modulated image capture

Publications (1)

Publication Number Publication Date
SG11201906657QA true SG11201906657QA (en) 2019-08-27

Family

ID=61868528

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201906657QA SG11201906657QA (en) 2017-03-19 2018-03-16 Systems and methods for modulated image capture

Country Status (7)

Country Link
US (1) US11411027B2 (en)
EP (1) EP3602109B1 (en)
JP (1) JP7149616B2 (en)
KR (1) KR102484157B1 (en)
CN (1) CN110431441B (en)
SG (1) SG11201906657QA (en)
WO (1) WO2018172610A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019027843A (en) * 2017-07-27 2019-02-21 セイコーエプソン株式会社 Circuit device, physical quantity measuring device, electronic apparatus, and mobile entity
WO2019177718A1 (en) * 2018-03-13 2019-09-19 The Procter & Gamble Company Consumer product compositions comprising microcapsules
JP2022002229A (en) * 2018-09-05 2022-01-06 ソニーセミコンダクタソリューションズ株式会社 Imaging apparatus and image pick-up device
JP6641442B1 (en) * 2018-10-16 2020-02-05 浜松ホトニクス株式会社 Photodetector and photodetector
KR20210074654A (en) * 2019-12-12 2021-06-22 에스케이하이닉스 주식회사 Image sensing device
WO2021168102A1 (en) 2020-02-19 2021-08-26 Pointcloud Inc. Backside illumination architectures for integrated photonic lidar
CN111341797B (en) * 2020-03-09 2022-10-28 宁波飞芯电子科技有限公司 Photoelectric conversion element and image sensor
KR20220101906A (en) 2021-01-12 2022-07-19 에스케이하이닉스 주식회사 Image sensing device
JP2023133816A (en) * 2022-03-14 2023-09-27 ソニーセミコンダクタソリューションズ株式会社 Ranging device

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55124259A (en) 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
JPS58105672A (en) 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd Semiconductor image pickup device
JPS59107570A (en) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd Semiconductor image pick-up device
JPH0666446B2 (en) 1984-03-29 1994-08-24 オリンパス光学工業株式会社 Solid-state image sensor
US4837607A (en) * 1984-04-25 1989-06-06 Josef Kemmer Large-area, low capacitance semiconductor arrangement
JPS60229368A (en) 1984-04-27 1985-11-14 Olympus Optical Co Ltd Solid-state image pickup device
WO2000021280A1 (en) 1998-10-07 2000-04-13 California Institute Of Technology Silicon-on-insulator (soi) active pixel sensors with the photosites implemented in the substrate
US6326230B1 (en) 1999-01-06 2001-12-04 California Institute Of Technology High speed CMOS imager with motion artifact supression and anti-blooming
US7012738B1 (en) 2000-10-16 2006-03-14 Rudolf Schwarte Method and device for detecting and processing signal waves
US6580496B2 (en) 2000-11-09 2003-06-17 Canesta, Inc. Systems for CMOS-compatible three-dimensional image sensing using quantum efficiency modulation
AU2002239608A1 (en) * 2000-12-11 2002-06-24 Canesta, Inc. Cmos-compatible three-dimensional image sensing using quantum efficiency modulation
US20090224351A1 (en) * 2002-08-27 2009-09-10 E-Phocus, Inc CMOS sensor with approximately equal potential photodiodes
US7166878B2 (en) 2003-11-04 2007-01-23 Sarnoff Corporation Image sensor with deep well region and method of fabricating the image sensor
US7361877B2 (en) 2005-05-27 2008-04-22 Eastman Kodak Company Pinned-photodiode pixel with global shutter
JP5592070B2 (en) * 2006-03-14 2014-09-17 プライム センス リミティド Light field that changes depth for 3D detection
KR101408959B1 (en) 2006-03-14 2014-07-02 프라임센스 엘티디. Depth-varying light fields for three dimensional sensing
US7564022B1 (en) * 2008-02-29 2009-07-21 Caeleste Cvba Method and device for time-gating the sensitivity of an imager structure
US8311374B2 (en) * 2008-07-29 2012-11-13 University Of Washington Beam generation and steering with integrated optical circuits for light detection and ranging
US8953149B2 (en) * 2009-02-17 2015-02-10 Microsoft Corporation CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation contrast
GB2474631A (en) * 2009-10-14 2011-04-27 Optrima Nv Photonic Mixer
US8687174B2 (en) 2010-08-11 2014-04-01 Samsung Electronics Co., Ltd. Unit pixel, photo-detection device and method of measuring a distance using the same
JP5977366B2 (en) * 2013-01-10 2016-08-24 ソフトキネティック センサー エヌブイ Color invisible light sensor, eg IR sensor, ie multispectral sensor
EP2960952B1 (en) * 2014-06-27 2019-01-02 Sony Depthsensing Solutions SA/NV Majority carrier current assisted radiation detector device
DE102014113037B4 (en) 2014-09-10 2018-02-08 Infineon Technologies Ag Imaging circuits and a method of operating an imaging circuit
DE102014115310A1 (en) * 2014-10-21 2016-04-21 Infineon Technologies Ag Image forming apparatus and a runtime image forming method
US9780138B2 (en) * 2014-11-26 2017-10-03 Caeleste Cvba Three level transfer gate
US9871065B2 (en) * 2014-12-22 2018-01-16 Google Inc. RGBZ pixel unit cell with first and second Z transfer gates
EP3193190B1 (en) 2016-01-15 2023-04-12 Sony Depthsensing Solutions N.V. A detector device with majority current and a circuitry for controlling the current

Also Published As

Publication number Publication date
US11411027B2 (en) 2022-08-09
CN110431441A (en) 2019-11-08
EP3602109B1 (en) 2021-01-20
JP2020515085A (en) 2020-05-21
KR20190127677A (en) 2019-11-13
EP3602109A1 (en) 2020-02-05
CN110431441B (en) 2023-09-15
US20210134854A1 (en) 2021-05-06
WO2018172610A1 (en) 2018-09-27
KR102484157B1 (en) 2023-01-03
JP7149616B2 (en) 2022-10-07

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