SG11201807932XA - Mask blank, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Info

Publication number
SG11201807932XA
SG11201807932XA SG11201807932XA SG11201807932XA SG11201807932XA SG 11201807932X A SG11201807932X A SG 11201807932XA SG 11201807932X A SG11201807932X A SG 11201807932XA SG 11201807932X A SG11201807932X A SG 11201807932XA SG 11201807932X A SG11201807932X A SG 11201807932XA
Authority
SG
Singapore
Prior art keywords
manufacturing
thin film
silicon
mask
mask blank
Prior art date
Application number
SG11201807932XA
Other languages
English (en)
Inventor
Atsushi Kominato
Toshiyuki Suzuki
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201807932XA publication Critical patent/SG11201807932XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
SG11201807932XA 2016-03-29 2017-03-08 Mask blank, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device SG11201807932XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016065394 2016-03-29
PCT/JP2017/009201 WO2017169587A1 (ja) 2016-03-29 2017-03-08 マスクブランク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
SG11201807932XA true SG11201807932XA (en) 2018-10-30

Family

ID=59963104

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807932XA SG11201807932XA (en) 2016-03-29 2017-03-08 Mask blank, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US11327396B2 (zh)
JP (2) JP6495472B2 (zh)
KR (1) KR102313892B1 (zh)
SG (1) SG11201807932XA (zh)
TW (2) TWI702466B (zh)
WO (1) WO2017169587A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11202002544SA (en) * 2017-09-21 2020-04-29 Hoya Corp Mask blank, transfer mask, and method for manufacturing semiconductor device
JP6738941B2 (ja) * 2019-06-24 2020-08-12 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
JP7329031B2 (ja) * 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JP2022118976A (ja) * 2021-02-03 2022-08-16 アルバック成膜株式会社 マスクブランクス及びフォトマスク

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002090978A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
JP3722029B2 (ja) 2000-09-12 2005-11-30 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
US7029803B2 (en) 2003-09-05 2006-04-18 Schott Ag Attenuating phase shift mask blank and photomask
EP1668413A2 (en) * 2003-09-05 2006-06-14 Schott AG Phase shift mask blank with increased uniformity
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크
KR20070096749A (ko) 2006-06-20 2007-10-02 주식회사 에스앤에스텍 블랭크 마스크 및 그 제조방법
JP4489820B2 (ja) * 2008-03-31 2010-06-23 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
JP5272568B2 (ja) * 2008-08-06 2013-08-28 大日本印刷株式会社 ハーフトーン型位相シフトマスクの製造方法
JP5497288B2 (ja) 2008-12-29 2014-05-21 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
JP5221495B2 (ja) * 2009-11-30 2013-06-26 Ｈｏｙａ株式会社 マスクブランクの製造方法
JP5762819B2 (ja) * 2010-05-19 2015-08-12 Hoya株式会社 マスクブランクの製造方法及び転写用マスクの製造方法、並びにマスクブランク及び転写用マスク
EP3865875A1 (en) * 2011-09-25 2021-08-18 Labrador Diagnostics LLC Systems and methods for multi-analysis
KR101172698B1 (ko) 2011-10-17 2012-09-13 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조방법
US20150111134A1 (en) * 2012-03-14 2015-04-23 Hoya Corporation Mask blank and method of manufacturing a transfer mask
US20150079502A1 (en) 2012-03-14 2015-03-19 Hoya Corporation Mask blank and method of manufacturing a transfer mask
JP5690023B2 (ja) * 2012-07-13 2015-03-25 Hoya株式会社 マスクブランク及び位相シフトマスクの製造方法
JP5882504B2 (ja) * 2013-01-18 2016-03-09 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法及び転写用マスクの製造方法
JP5823655B1 (ja) * 2014-03-18 2015-11-25 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6150299B2 (ja) 2014-03-30 2017-06-21 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6430155B2 (ja) 2014-06-19 2018-11-28 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6087401B2 (ja) * 2015-08-14 2017-03-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Also Published As

Publication number Publication date
TWI702466B (zh) 2020-08-21
US20190064649A1 (en) 2019-02-28
JP6495472B2 (ja) 2019-04-03
JPWO2017169587A1 (ja) 2018-04-05
KR102313892B1 (ko) 2021-10-15
TW202040261A (zh) 2020-11-01
TW201800834A (zh) 2018-01-01
TWI741687B (zh) 2021-10-01
JP6786645B2 (ja) 2020-11-18
WO2017169587A1 (ja) 2017-10-05
KR20180128403A (ko) 2018-12-03
US11327396B2 (en) 2022-05-10
JP2019082737A (ja) 2019-05-30

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