SG11201807050SA - Method for polishing silicon substrate and polishing composition set - Google Patents

Method for polishing silicon substrate and polishing composition set

Info

Publication number
SG11201807050SA
SG11201807050SA SG11201807050SA SG11201807050SA SG11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA
Authority
SG
Singapore
Prior art keywords
polishing
silicon substrate
stock
final
sub
Prior art date
Application number
SG11201807050SA
Other languages
English (en)
Inventor
Makoto Tabata
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201807050SA publication Critical patent/SG11201807050SA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
SG11201807050SA 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set SG11201807050SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016037247A JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット
PCT/JP2017/005139 WO2017150157A1 (fr) 2016-02-29 2017-02-13 Procédé permettant de polir un substrat de silicium et ensemble de composition de polissage

Publications (1)

Publication Number Publication Date
SG11201807050SA true SG11201807050SA (en) 2018-09-27

Family

ID=59743844

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807050SA SG11201807050SA (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set

Country Status (8)

Country Link
US (1) US11648641B2 (fr)
EP (1) EP3425658B1 (fr)
JP (1) JP6377656B2 (fr)
KR (1) KR102612276B1 (fr)
CN (1) CN108966673B (fr)
SG (1) SG11201807050SA (fr)
TW (1) TWI797076B (fr)
WO (1) WO2017150157A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3950877A4 (fr) * 2019-03-27 2022-04-27 Fujimi Incorporated Procédé de polissage d'un objet à polir comprenant un matériau ayant une liaison silicium-silicium
WO2020255581A1 (fr) * 2019-06-20 2020-12-24 富士フイルム株式会社 Liquide de polissage, et procédé de polissage chimique et mécanique
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
CN115697629A (zh) * 2020-05-27 2023-02-03 福吉米株式会社 研磨方法和抛光用组合物套组

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US5860848A (en) 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
JP3219142B2 (ja) * 1997-12-17 2001-10-15 信越半導体株式会社 半導体シリコンウエーハ研磨用研磨剤及び研磨方法
JPH11214338A (ja) * 1998-01-20 1999-08-06 Memc Kk シリコンウェハーの研磨方法
US6431959B1 (en) * 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US20020004265A1 (en) * 2000-03-17 2002-01-10 Krishna Vepa Grind polish cluster and methods to remove visual grind pattern
WO2001070457A1 (fr) * 2000-03-17 2001-09-27 Wafer Solutions, Inc Bloc a polir par meulage et polissage de substrats sur les deux faces
EP1261020A4 (fr) * 2000-10-26 2005-01-19 Shinetsu Handotai Kk Procede de production de plaquettes, appareil de polissage et plaquette
JP2003297775A (ja) * 2002-04-03 2003-10-17 Komatsu Electronic Metals Co Ltd 鏡面半導体ウェーハの製造方法および半導体ウェーハ用研磨スラリ
JP2004165424A (ja) * 2002-11-13 2004-06-10 Ekc Technology Inc 研磨剤組成物とそれによる研磨方法
JP4467241B2 (ja) * 2003-01-28 2010-05-26 信越半導体株式会社 半導体ウエーハの製造方法
EP1610365B1 (fr) 2003-03-18 2012-08-08 Nomura Micro Science Co., Ltd. Materiau de purification d'une suspension de purification de semi-conducteurs, module de purification d'une suspension de purification de semi-conducteurs et procede de fabrication d'une suspension de purification de semi-conducteurs
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2006135059A (ja) * 2004-11-05 2006-05-25 Renesas Technology Corp 半導体装置の製造方法
CN100353518C (zh) * 2004-12-08 2007-12-05 上海华虹Nec电子有限公司 浅沟槽隔离工艺中化学机械抛光工艺窗口确定方法
JP4524643B2 (ja) 2005-05-18 2010-08-18 株式会社Ｓｕｍｃｏ ウェーハ研磨方法
JP2007103515A (ja) 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
JP5219334B2 (ja) 2005-11-30 2013-06-26 株式会社Ｓｕｍｃｏ 半導体基板の製造方法および品質評価方法
US20110027997A1 (en) 2008-04-16 2011-02-03 Hitachi Chemical Company, Ltd. Polishing liquid for cmp and polishing method
JP2010021487A (ja) * 2008-07-14 2010-01-28 Sumco Corp 半導体ウェーハおよびその製造方法
US8834230B2 (en) 2008-07-31 2014-09-16 Shin-Etsu Handotai Co., Ltd. Wafer polishing method and double-side polishing apparatus
JP2011142284A (ja) 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
EP2533274B1 (fr) 2010-02-01 2014-07-30 JSR Corporation Dispersion aqueuse pour le polissage chimique-mécanique, et procédé de polissage chimique-mécanique utilisant celle-ci
CN102339742A (zh) * 2011-09-01 2012-02-01 上海宏力半导体制造有限公司 多晶硅化学机械研磨工艺的研磨垫预研磨方法
JP5460827B2 (ja) * 2012-11-14 2014-04-02 株式会社フジミインコーポレーテッド シリコンウエハの製造方法
DE102013218880A1 (de) 2012-11-20 2014-05-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe, umfassend das gleichzeitige Polieren einer Vorderseite und einer Rückseite einer Substratscheibe

Also Published As

Publication number Publication date
TW201737334A (zh) 2017-10-16
KR20180121481A (ko) 2018-11-07
KR102612276B1 (ko) 2023-12-12
CN108966673B (zh) 2024-02-27
US20190022821A1 (en) 2019-01-24
EP3425658B1 (fr) 2024-04-03
EP3425658A4 (fr) 2019-11-13
US11648641B2 (en) 2023-05-16
JP6377656B2 (ja) 2018-08-22
WO2017150157A1 (fr) 2017-09-08
CN108966673A (zh) 2018-12-07
EP3425658A1 (fr) 2019-01-09
TWI797076B (zh) 2023-04-01
JP2017157608A (ja) 2017-09-07

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