SG11201805152UA - Superconducting bump bonds - Google Patents
Superconducting bump bondsInfo
- Publication number
- SG11201805152UA SG11201805152UA SG11201805152UA SG11201805152UA SG11201805152UA SG 11201805152U A SG11201805152U A SG 11201805152UA SG 11201805152U A SG11201805152U A SG 11201805152UA SG 11201805152U A SG11201805152U A SG 11201805152UA SG 11201805152U A SG11201805152U A SG 11201805152UA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- chip
- circuit element
- pct
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 abstract 2
- 229910052729 chemical element Inorganic materials 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
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- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/81409—Indium [In] as principal constituent
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- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10271—Silicon-germanium [SiGe]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
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- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20102—Temperature range 0 C=<T<60 C, 273.15 K =<T< 333.15K
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562267824P | 2015-12-15 | 2015-12-15 | |
PCT/US2015/068082 WO2017105524A1 (en) | 2015-12-15 | 2015-12-30 | Superconducting bump bonds |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201805152UA true SG11201805152UA (en) | 2018-07-30 |
Family
ID=55229849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201805152UA SG11201805152UA (en) | 2015-12-15 | 2015-12-30 | Superconducting bump bonds |
Country Status (9)
Country | Link |
---|---|
US (3) | US10497853B2 (zh) |
EP (2) | EP3576142B1 (zh) |
JP (1) | JP6742433B2 (zh) |
KR (1) | KR102109070B1 (zh) |
CN (2) | CN109075186B (zh) |
AU (1) | AU2015417766B2 (zh) |
CA (1) | CA3008825C (zh) |
SG (1) | SG11201805152UA (zh) |
WO (1) | WO2017105524A1 (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109075186B (zh) * | 2015-12-15 | 2023-09-05 | 谷歌有限责任公司 | 超导凸起接合件 |
US10748960B2 (en) * | 2016-07-01 | 2020-08-18 | Intel Corporation | Interconnects below qubit plane by substrate doping |
US10748961B2 (en) * | 2016-07-01 | 2020-08-18 | Intel Corporation | Interconnects below qubit plane by substrate bonding |
WO2018052399A1 (en) | 2016-09-13 | 2018-03-22 | Google Llc | Reducing loss in stacked quantum devices |
KR102208348B1 (ko) * | 2016-09-15 | 2021-01-27 | 구글 엘엘씨 | 이온 밀 손상을 줄이기 위한 캐핑층 |
JP7146799B2 (ja) * | 2017-09-19 | 2022-10-04 | グーグル エルエルシー | 正確なチップ間分離のためのストッパとしてのピラー |
US10608158B2 (en) * | 2017-09-29 | 2020-03-31 | International Business Machines Corporation | Two-component bump metallization |
US10727391B2 (en) | 2017-09-29 | 2020-07-28 | International Business Machines Corporation | Bump bonded cryogenic chip carrier |
CA3078581A1 (en) | 2017-10-05 | 2019-04-11 | Google Llc | Low footprint resonator in flip chip geometry |
US10446736B2 (en) * | 2017-11-27 | 2019-10-15 | International Business Machines Corporation | Backside coupling with superconducting partial TSV for transmon qubits |
US10340438B2 (en) | 2017-11-28 | 2019-07-02 | International Business Machines Corporation | Laser annealing qubits for optimized frequency allocation |
US10355193B2 (en) | 2017-11-28 | 2019-07-16 | International Business Machines Corporation | Flip chip integration on qubit chips |
US10418540B2 (en) | 2017-11-28 | 2019-09-17 | International Business Machines Corporation | Adjustment of qubit frequency through annealing |
US10170681B1 (en) | 2017-11-28 | 2019-01-01 | International Business Machines Corporation | Laser annealing of qubits with structured illumination |
US11895931B2 (en) | 2017-11-28 | 2024-02-06 | International Business Machines Corporation | Frequency tuning of multi-qubit systems |
US10305015B1 (en) | 2017-11-30 | 2019-05-28 | International Business Machines Corporation | Low loss architecture for superconducting qubit circuits |
US10263170B1 (en) * | 2017-11-30 | 2019-04-16 | International Business Machines Corporation | Bumped resonator structure |
US10651233B2 (en) * | 2018-08-21 | 2020-05-12 | Northrop Grumman Systems Corporation | Method for forming superconducting structures |
US10692795B2 (en) * | 2018-11-13 | 2020-06-23 | International Business Machines Corporation | Flip chip assembly of quantum computing devices |
US10950778B2 (en) * | 2019-01-07 | 2021-03-16 | Northrop Grumman Systems Corporation | Superconducting bump bond electrical characterization |
US10944039B2 (en) | 2019-06-19 | 2021-03-09 | International Business Machines Corporation | Fabricating transmon qubit flip-chip structures for quantum computing devices |
US10956828B2 (en) | 2019-06-19 | 2021-03-23 | International Business Machines Corporation | Transmon qubit flip-chip structures for quantum computing devices |
US11270963B2 (en) * | 2020-01-14 | 2022-03-08 | Sandisk Technologies Llc | Bonding pads including interfacial electromigration barrier layers and methods of making the same |
US11417819B2 (en) * | 2020-04-27 | 2022-08-16 | Microsoft Technology Licensing, Llc | Forming a bumpless superconductor device by bonding two substrates via a dielectric layer |
EP3937093A1 (en) * | 2020-07-09 | 2022-01-12 | IQM Finland Oy | Quantum computing circuit comprising a plurality of chips and method for manufacturing the same |
FR3114443B1 (fr) * | 2020-09-21 | 2022-12-23 | Commissariat Energie Atomique | Structure d’intégration à routage bifonctionnel et assemblage comprenant une telle structure |
JP2024502717A (ja) * | 2020-12-16 | 2024-01-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 相互接続のための保護された層を作成するためのデバイスおよび方法、およびパッケージ化された量子構造内のデバイス |
WO2022143809A1 (zh) * | 2020-12-31 | 2022-07-07 | 合肥本源量子计算科技有限责任公司 | 超导量子芯片结构以及超导量子芯片制备方法 |
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- 2015-12-30 CN CN201580085714.XA patent/CN109075186B/zh active Active
- 2015-12-30 US US16/062,064 patent/US10497853B2/en active Active
- 2015-12-30 EP EP19187073.2A patent/EP3576142B1/en active Active
- 2015-12-30 AU AU2015417766A patent/AU2015417766B2/en active Active
- 2015-12-30 JP JP2018551750A patent/JP6742433B2/ja active Active
- 2015-12-30 SG SG11201805152UA patent/SG11201805152UA/en unknown
- 2015-12-30 EP EP15828622.9A patent/EP3391415B1/en active Active
- 2015-12-30 WO PCT/US2015/068082 patent/WO2017105524A1/en active Application Filing
- 2015-12-30 KR KR1020187020003A patent/KR102109070B1/ko active IP Right Grant
- 2015-12-30 CA CA3008825A patent/CA3008825C/en active Active
- 2015-12-30 CN CN202311036041.1A patent/CN117202767A/zh active Pending
-
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Also Published As
Publication number | Publication date |
---|---|
US20180366634A1 (en) | 2018-12-20 |
US20200006621A1 (en) | 2020-01-02 |
EP3576142B1 (en) | 2020-11-25 |
EP3576142A1 (en) | 2019-12-04 |
EP3391415B1 (en) | 2019-08-21 |
US11133451B2 (en) | 2021-09-28 |
AU2015417766B2 (en) | 2019-02-21 |
KR20180122596A (ko) | 2018-11-13 |
AU2015417766A1 (en) | 2018-07-05 |
CA3008825A1 (en) | 2017-06-22 |
US20200006620A1 (en) | 2020-01-02 |
JP6742433B2 (ja) | 2020-08-19 |
JP2019504511A (ja) | 2019-02-14 |
KR102109070B1 (ko) | 2020-05-11 |
CN109075186B (zh) | 2023-09-05 |
US11133450B2 (en) | 2021-09-28 |
US10497853B2 (en) | 2019-12-03 |
CN117202767A (zh) | 2023-12-08 |
CN109075186A (zh) | 2018-12-21 |
EP3391415A1 (en) | 2018-10-24 |
WO2017105524A1 (en) | 2017-06-22 |
CA3008825C (en) | 2021-05-25 |
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