SG11201701836YA - Sputtering target for forming magnetic recording film and method for producing same - Google Patents

Sputtering target for forming magnetic recording film and method for producing same

Info

Publication number
SG11201701836YA
SG11201701836YA SG11201701836YA SG11201701836YA SG11201701836YA SG 11201701836Y A SG11201701836Y A SG 11201701836YA SG 11201701836Y A SG11201701836Y A SG 11201701836YA SG 11201701836Y A SG11201701836Y A SG 11201701836YA SG 11201701836Y A SG11201701836Y A SG 11201701836YA
Authority
SG
Singapore
Prior art keywords
magnetic recording
sputtering target
recording film
producing same
forming magnetic
Prior art date
Application number
SG11201701836YA
Other languages
English (en)
Inventor
Shin-Ichi Ogino
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201701836YA publication Critical patent/SG11201701836YA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1084—Alloys containing non-metals by mechanical alloying (blending, milling)
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
    • H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
    • H01F1/06—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
    • H01F1/068—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] (nano)particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SG11201701836YA 2014-09-22 2015-07-07 Sputtering target for forming magnetic recording film and method for producing same SG11201701836YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014192926 2014-09-22
PCT/JP2015/069476 WO2016047236A1 (ja) 2014-09-22 2015-07-07 磁気記録膜形成用スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201701836YA true SG11201701836YA (en) 2017-04-27

Family

ID=55580774

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201701836YA SG11201701836YA (en) 2014-09-22 2015-07-07 Sputtering target for forming magnetic recording film and method for producing same

Country Status (4)

Country Link
US (1) US10600440B2 (ja)
JP (1) JP6285043B2 (ja)
SG (1) SG11201701836YA (ja)
WO (1) WO2016047236A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015076756A1 (en) 2013-11-21 2015-05-28 Singapore University Of Technology And Design An apparatus and method for tracking a device
WO2017141558A1 (ja) 2016-02-19 2017-08-24 Ｊｘ金属株式会社 磁気記録媒体用スパッタリングターゲット及び磁性薄膜
SG11201800871SA (en) * 2016-09-12 2018-05-30 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target
JP6397592B1 (ja) * 2017-10-02 2018-09-26 住友化学株式会社 スパッタリングターゲットの製造方法およびスパッタリングターゲット
WO2019187243A1 (ja) * 2018-03-27 2019-10-03 Ｊｘ金属株式会社 スパッタリングターゲット及びその製造方法、並びに磁気記録媒体の製造方法
TWI692536B (zh) * 2019-04-23 2020-05-01 光洋應用材料科技股份有限公司 鐵鉑基靶材及其製造方法
JP7104001B2 (ja) * 2019-06-28 2022-07-20 田中貴金属工業株式会社 Ｆｅ－Ｐｔ－ＢＮ系スパッタリングターゲット及びその製造方法
CN114072536B (zh) * 2019-07-12 2024-06-07 田中贵金属工业株式会社 Fe-Pt-BN系溅射靶及其制造方法
TWI752655B (zh) * 2020-09-25 2022-01-11 光洋應用材料科技股份有限公司 鐵鉑基靶材及其製法
CN113149461B (zh) * 2021-05-11 2022-12-06 中建材（内江）玻璃高新技术有限公司 一种低辐射玻璃

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104886A (ja) * 1986-10-23 1988-05-10 Daicel Chem Ind Ltd 光記録媒体
US9034153B2 (en) 2006-01-13 2015-05-19 Jx Nippon Mining & Metals Corporation Nonmagnetic material particle dispersed ferromagnetic material sputtering target
WO2011070860A1 (ja) 2009-12-11 2011-06-16 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット
WO2012014504A1 (ja) * 2010-07-29 2012-02-02 Jx日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット及びその製造方法
MY156386A (en) 2010-08-31 2016-02-15 Jx Nippon Mining & Metals Corp Fe-pt-based ferromagnetic material sputtering target
JP5590322B2 (ja) 2010-11-12 2014-09-17 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
CN103270554B (zh) 2010-12-20 2016-09-28 吉坤日矿日石金属株式会社 分散有C粒子的Fe-Pt型溅射靶
JP5041261B2 (ja) * 2011-01-31 2012-10-03 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP5041262B2 (ja) * 2011-01-31 2012-10-03 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP5912559B2 (ja) 2011-03-30 2016-04-27 田中貴金属工業株式会社 ＦｅＰｔ−Ｃ系スパッタリングターゲットの製造方法
MY154754A (en) 2011-03-30 2015-07-15 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film
JP5937318B2 (ja) * 2011-09-01 2016-06-22 石福金属興業株式会社 磁性薄膜
CN103717781B (zh) 2011-09-26 2016-02-24 吉坤日矿日石金属株式会社 Fe-Pt-C型溅射靶
JP5587495B2 (ja) 2011-12-22 2014-09-10 Ｊｘ日鉱日石金属株式会社 Ｃ粒子が分散したＦｅ−Ｐｔ系スパッタリングターゲット
SG11201403264SA (en) 2012-05-22 2014-09-26 Jx Nippon Mining & Metals Corp Fe-Pt-Ag-C-BASED SPUTTERING TARGET HAVING C PARTICLES DISPERSED THEREIN, AND METHOD FOR PRODUCING SAME
CN104145306B (zh) 2012-06-18 2017-09-26 吉坤日矿日石金属株式会社 磁记录膜用溅射靶
JP5457615B1 (ja) 2012-07-20 2014-04-02 Ｊｘ日鉱日石金属株式会社 磁気記録膜形成用スパッタリングターゲット及びその製造方法
SG11201404222PA (en) 2012-08-31 2014-10-30 Jx Nippon Mining & Metals Corp Fe-BASED MAGNETIC MATERIAL SINTERED BODY
CN104662606B (zh) 2012-09-21 2018-07-17 吉坤日矿日石金属株式会社 Fe-Pt基磁性材料烧结体
WO2014065201A1 (ja) 2012-10-23 2014-05-01 Jx日鉱日石金属株式会社 Ｆｅ－Ｐｔ系焼結体スパッタリングターゲット及びその製造方法
WO2014064995A1 (ja) 2012-10-25 2014-05-01 Jx日鉱日石金属株式会社 非磁性物質分散型Ｆｅ－Ｐｔ系スパッタリングターゲット
SG11201506140WA (en) * 2013-04-15 2015-09-29 Jx Nippon Mining & Metals Corp Sputtering target
JP6985126B2 (ja) * 2017-12-14 2021-12-22 日華化学株式会社 積層体、コーティング剤、及び積層体の製造方法

Also Published As

Publication number Publication date
JPWO2016047236A1 (ja) 2017-05-25
US10600440B2 (en) 2020-03-24
US20170294203A1 (en) 2017-10-12
JP6285043B2 (ja) 2018-03-07
WO2016047236A1 (ja) 2016-03-31

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