SG11201510631VA - Process For The Manufacture Of A Composite Structure - Google Patents
Process For The Manufacture Of A Composite StructureInfo
- Publication number
- SG11201510631VA SG11201510631VA SG11201510631VA SG11201510631VA SG11201510631VA SG 11201510631V A SG11201510631V A SG 11201510631VA SG 11201510631V A SG11201510631V A SG 11201510631VA SG 11201510631V A SG11201510631V A SG 11201510631VA SG 11201510631V A SG11201510631V A SG 11201510631VA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacture
- composite structure
- composite
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
- H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Medicinal Preparation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1301528A FR3007891B1 (fr) | 2013-06-28 | 2013-06-28 | Procede de fabrication d'une structure composite |
| PCT/FR2014/051487 WO2014207346A1 (fr) | 2013-06-28 | 2014-06-17 | Procede de fabrication d'une structure composite |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201510631VA true SG11201510631VA (en) | 2016-01-28 |
Family
ID=49474468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201510631VA SG11201510631VA (en) | 2013-06-28 | 2014-06-17 | Process For The Manufacture Of A Composite Structure |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9887124B2 (https=) |
| JP (1) | JP6470275B2 (https=) |
| CN (1) | CN105358474B (https=) |
| DE (1) | DE112014003019B4 (https=) |
| FR (1) | FR3007891B1 (https=) |
| SG (1) | SG11201510631VA (https=) |
| WO (1) | WO2014207346A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6747386B2 (ja) * | 2017-06-23 | 2020-08-26 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法 |
| FR3116151A1 (fr) * | 2020-11-10 | 2022-05-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d’une structure de piegeage d’un substrat utile |
| FR3134229B1 (fr) * | 2022-04-01 | 2024-03-08 | Commissariat Energie Atomique | Procede de transfert d’une couche mince sur un substrat support |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3031904B2 (ja) * | 1998-02-18 | 2000-04-10 | キヤノン株式会社 | 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法 |
| MY118019A (en) * | 1998-02-18 | 2004-08-30 | Canon Kk | Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof |
| FR2797714B1 (fr) * | 1999-08-20 | 2001-10-26 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
| FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
| FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
| FR2817394B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
| FR2894990B1 (fr) * | 2005-12-21 | 2008-02-22 | Soitec Silicon On Insulator | Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede |
| FR2823599B1 (fr) * | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
| FR2827423B1 (fr) * | 2001-07-16 | 2005-05-20 | Soitec Silicon On Insulator | Procede d'amelioration d'etat de surface |
| US6884696B2 (en) * | 2001-07-17 | 2005-04-26 | Shin-Etsu Handotai Co., Ltd. | Method for producing bonding wafer |
| FR2835095B1 (fr) * | 2002-01-22 | 2005-03-18 | Procede de preparation d'ensembles a semi-conducteurs separables, notamment pour former des substrats pour l'electronique, l'optoelectrique et l'optique | |
| KR100511656B1 (ko) * | 2002-08-10 | 2005-09-07 | 주식회사 실트론 | 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼 |
| US6911375B2 (en) * | 2003-06-02 | 2005-06-28 | International Business Machines Corporation | Method of fabricating silicon devices on sapphire with wafer bonding at low temperature |
| FR2857983B1 (fr) * | 2003-07-24 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiee |
| US7772087B2 (en) * | 2003-12-19 | 2010-08-10 | Commissariat A L'energie Atomique | Method of catastrophic transfer of a thin film after co-implantation |
| JP4285244B2 (ja) * | 2004-01-08 | 2009-06-24 | 株式会社Ｓｕｍｃｏ | Ｓｏｉウェーハの作製方法 |
| US7179719B2 (en) * | 2004-09-28 | 2007-02-20 | Sharp Laboratories Of America, Inc. | System and method for hydrogen exfoliation |
| FR2877491B1 (fr) * | 2004-10-29 | 2007-01-19 | Soitec Silicon On Insulator | Structure composite a forte dissipation thermique |
| US8138061B2 (en) * | 2005-01-07 | 2012-03-20 | International Business Machines Corporation | Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide |
| JP2006216826A (ja) * | 2005-02-04 | 2006-08-17 | Sumco Corp | Ｓｏｉウェーハの製造方法 |
| FR2890489B1 (fr) * | 2005-09-08 | 2008-03-07 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant |
| JP2007242972A (ja) * | 2006-03-09 | 2007-09-20 | Shin Etsu Handotai Co Ltd | Ｓｏｉウェーハの製造方法 |
| JP2008028070A (ja) | 2006-07-20 | 2008-02-07 | Sumco Corp | 貼り合わせウェーハの製造方法 |
| US20080070340A1 (en) * | 2006-09-14 | 2008-03-20 | Nicholas Francis Borrelli | Image sensor using thin-film SOI |
| FR2910179B1 (fr) * | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
| FR2911430B1 (fr) * | 2007-01-15 | 2009-04-17 | Soitec Silicon On Insulator | "procede de fabrication d'un substrat hybride" |
| FR2912259B1 (fr) * | 2007-02-01 | 2009-06-05 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat du type "silicium sur isolant". |
| FR2913528B1 (fr) * | 2007-03-06 | 2009-07-03 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche d'oxyde enterree pour la realisation de composants electroniques ou analogues. |
| US7767542B2 (en) * | 2007-04-20 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd | Manufacturing method of SOI substrate |
| US7619283B2 (en) * | 2007-04-20 | 2009-11-17 | Corning Incorporated | Methods of fabricating glass-based substrates and apparatus employing same |
| US7763502B2 (en) * | 2007-06-22 | 2010-07-27 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device |
| JP5386856B2 (ja) * | 2008-06-03 | 2014-01-15 | 株式会社Ｓｕｍｃｏ | 貼り合わせウェーハの製造方法 |
| JP5478199B2 (ja) * | 2008-11-13 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5310004B2 (ja) * | 2009-01-07 | 2013-10-09 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| JP5607399B2 (ja) * | 2009-03-24 | 2014-10-15 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| CN102986020A (zh) * | 2010-06-30 | 2013-03-20 | 康宁股份有限公司 | 对绝缘体基材上的硅进行精整的方法 |
| US8487280B2 (en) * | 2010-10-21 | 2013-07-16 | Varian Semiconductor Equipment Associates, Inc. | Modulating implantation for improved workpiece splitting |
| JP5802436B2 (ja) * | 2011-05-30 | 2015-10-28 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| JP5587257B2 (ja) * | 2011-07-06 | 2014-09-10 | 信越半導体株式会社 | イオン注入機の基板保持具の劣化判定方法 |
| CN102386123B (zh) | 2011-07-29 | 2013-11-13 | 上海新傲科技股份有限公司 | 制备具有均匀厚度器件层的衬底的方法 |
| CN102347219A (zh) * | 2011-09-23 | 2012-02-08 | 中国科学院微电子研究所 | 形成复合功能材料结构的方法 |
| JP5670303B2 (ja) * | 2011-12-08 | 2015-02-18 | 信越半導体株式会社 | イオン注入機の基板保持具の劣化判定方法 |
| JP5927894B2 (ja) | 2011-12-15 | 2016-06-01 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法 |
-
2013
- 2013-06-28 FR FR1301528A patent/FR3007891B1/fr active Active
-
2014
- 2014-06-17 US US14/900,257 patent/US9887124B2/en active Active
- 2014-06-17 CN CN201480036456.1A patent/CN105358474B/zh active Active
- 2014-06-17 DE DE112014003019.8T patent/DE112014003019B4/de active Active
- 2014-06-17 SG SG11201510631VA patent/SG11201510631VA/en unknown
- 2014-06-17 WO PCT/FR2014/051487 patent/WO2014207346A1/fr not_active Ceased
- 2014-06-17 JP JP2016522698A patent/JP6470275B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| FR3007891A1 (fr) | 2015-01-02 |
| CN105358474B (zh) | 2018-02-13 |
| DE112014003019B4 (de) | 2025-06-05 |
| US9887124B2 (en) | 2018-02-06 |
| FR3007891B1 (fr) | 2016-11-25 |
| DE112014003019T5 (de) | 2016-03-17 |
| JP2016526796A (ja) | 2016-09-05 |
| CN105358474A (zh) | 2016-02-24 |
| US20160372361A1 (en) | 2016-12-22 |
| JP6470275B2 (ja) | 2019-02-13 |
| WO2014207346A1 (fr) | 2014-12-31 |
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