SG11201405091TA - Polishing agent, polishing agent set, and substrate polishing method - Google Patents
Polishing agent, polishing agent set, and substrate polishing methodInfo
- Publication number
- SG11201405091TA SG11201405091TA SG11201405091TA SG11201405091TA SG11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- polishing agent
- substrate
- agent
- agent set
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 3
- 239000003795 chemical substances by application Substances 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012035432 | 2012-02-21 | ||
PCT/JP2013/053559 WO2013125446A1 (ja) | 2012-02-21 | 2013-02-14 | 研磨剤、研磨剤セット及び基体の研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201405091TA true SG11201405091TA (en) | 2014-09-26 |
Family
ID=49005633
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201606827RA SG10201606827RA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
SG11201405091TA SG11201405091TA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201606827RA SG10201606827RA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10557058B2 (ko) |
JP (1) | JP6044630B2 (ko) |
KR (1) | KR102005132B1 (ko) |
CN (3) | CN108831830B (ko) |
SG (2) | SG10201606827RA (ko) |
TW (1) | TWI550045B (ko) |
WO (1) | WO2013125446A1 (ko) |
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KR101469258B1 (ko) | 2009-12-31 | 2014-12-09 | 제일모직주식회사 | Cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
CN107474799B (zh) | 2010-03-12 | 2020-12-29 | 昭和电工材料株式会社 | 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 |
JP5648567B2 (ja) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
CN103500706A (zh) | 2010-11-22 | 2014-01-08 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN103409108B (zh) * | 2010-11-22 | 2015-04-22 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
KR101243331B1 (ko) * | 2010-12-17 | 2013-03-13 | 솔브레인 주식회사 | 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법 |
CN102408836A (zh) | 2011-10-20 | 2012-04-11 | 天津理工大学 | 一种用于氧化钛薄膜化学机械平坦化的纳米抛光液及应用 |
WO2013125445A1 (ja) * | 2012-02-21 | 2013-08-29 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
WO2013175854A1 (ja) * | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
JP6060970B2 (ja) * | 2012-05-22 | 2017-01-18 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
US10557059B2 (en) * | 2012-05-22 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
WO2013175856A1 (ja) * | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
JP6428625B2 (ja) * | 2013-08-30 | 2018-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、及び、基体の研磨方法 |
WO2015037311A1 (ja) * | 2013-09-10 | 2015-03-19 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
-
2013
- 2013-02-14 SG SG10201606827RA patent/SG10201606827RA/en unknown
- 2013-02-14 CN CN201810916995.4A patent/CN108831830B/zh active Active
- 2013-02-14 JP JP2014500686A patent/JP6044630B2/ja active Active
- 2013-02-14 US US14/379,954 patent/US10557058B2/en active Active
- 2013-02-14 CN CN201380010364.1A patent/CN104137232A/zh active Pending
- 2013-02-14 SG SG11201405091TA patent/SG11201405091TA/en unknown
- 2013-02-14 CN CN201710996717.XA patent/CN107617968A/zh active Pending
- 2013-02-14 WO PCT/JP2013/053559 patent/WO2013125446A1/ja active Application Filing
- 2013-02-14 KR KR1020147024760A patent/KR102005132B1/ko active IP Right Grant
- 2013-02-20 TW TW102105885A patent/TWI550045B/zh active
Also Published As
Publication number | Publication date |
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CN104137232A (zh) | 2014-11-05 |
KR20140129092A (ko) | 2014-11-06 |
CN108831830A (zh) | 2018-11-16 |
SG10201606827RA (en) | 2016-10-28 |
TW201343825A (zh) | 2013-11-01 |
CN108831830B (zh) | 2024-05-17 |
CN107617968A (zh) | 2018-01-23 |
TWI550045B (zh) | 2016-09-21 |
JP6044630B2 (ja) | 2016-12-14 |
KR102005132B1 (ko) | 2019-07-29 |
WO2013125446A1 (ja) | 2013-08-29 |
US20150017806A1 (en) | 2015-01-15 |
JPWO2013125446A1 (ja) | 2015-07-30 |
US10557058B2 (en) | 2020-02-11 |
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