SG11201404930SA - Post-cmp removal using compositions and method of use - Google Patents

Post-cmp removal using compositions and method of use

Info

Publication number
SG11201404930SA
SG11201404930SA SG11201404930SA SG11201404930SA SG11201404930SA SG 11201404930S A SG11201404930S A SG 11201404930SA SG 11201404930S A SG11201404930S A SG 11201404930SA SG 11201404930S A SG11201404930S A SG 11201404930SA SG 11201404930S A SG11201404930S A SG 11201404930SA
Authority
SG
Singapore
Prior art keywords
compositions
post
cmp removal
cmp
removal
Prior art date
Application number
SG11201404930SA
Other languages
English (en)
Inventor
Jun Liu
Jeffrey A Barnes
Emanuel I Cooper
Laisheng Sun
Elizabeth Thomas
Jason Chang
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of SG11201404930SA publication Critical patent/SG11201404930SA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02Anionic compounds
    • C11D1/12Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/22Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38Cationic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • C11D1/72Ethers of polyoxyalkylene glycols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/044Hydroxides or bases
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2003Alcohols; Phenols
    • C11D3/2041Dihydric alcohols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2068Ethers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • C11D3/2079Monocarboxylic acids-salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • C11D3/2082Polycarboxylic acids-salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/34Organic compounds containing sulfur
    • C11D3/3409Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39Organic or inorganic per-compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39Organic or inorganic per-compounds
    • C11D3/3942Inorganic per-compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/06Hydroxides
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG11201404930SA 2012-02-15 2013-02-15 Post-cmp removal using compositions and method of use SG11201404930SA (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261599162P 2012-02-15 2012-02-15
US201261651287P 2012-05-24 2012-05-24
US201261656992P 2012-06-07 2012-06-07
US201261661160P 2012-06-18 2012-06-18
PCT/US2013/026326 WO2013123317A1 (en) 2012-02-15 2013-02-15 Post-cmp removal using compositions and method of use

Publications (1)

Publication Number Publication Date
SG11201404930SA true SG11201404930SA (en) 2014-09-26

Family

ID=48984743

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201404930SA SG11201404930SA (en) 2012-02-15 2013-02-15 Post-cmp removal using compositions and method of use

Country Status (8)

Country Link
US (1) US10176979B2 (de)
EP (1) EP2814895A4 (de)
JP (1) JP2015512971A (de)
KR (1) KR102105381B1 (de)
CN (1) CN104508072A (de)
SG (1) SG11201404930SA (de)
TW (1) TWI600756B (de)
WO (1) WO2013123317A1 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6041624B2 (ja) * 2012-10-31 2016-12-14 株式会社ネオス シリカスケール除去剤組成物
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
TWI655273B (zh) 2013-03-04 2019-04-01 美商恩特葛瑞斯股份有限公司 選擇性蝕刻氮化鈦之組成物及方法
US9365934B2 (en) * 2013-04-12 2016-06-14 Mitsubishi Gas Chemical Company, Inc. Liquid composition used in etching copper- and titanium-containing multilayer film, etching method in which said composition is used, method for manufacturing multilayer-film wiring, and substrate
US10920141B2 (en) 2013-06-06 2021-02-16 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN112442374A (zh) 2013-07-31 2021-03-05 恩特格里斯公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
US10428271B2 (en) 2013-08-30 2019-10-01 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN103556164B (zh) * 2013-10-28 2015-08-19 沈阳大学 一种钛铝铬氮化物硬质反应膜的退除方法
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ni:NiGe:Ge選擇性蝕刻配方及其使用方法
KR102352475B1 (ko) 2013-12-20 2022-01-18 엔테그리스, 아이엔씨. 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
WO2015116679A1 (en) * 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US20160340620A1 (en) 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) * 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US20150344822A1 (en) * 2014-06-02 2015-12-03 Tetra Tech, Inc. Decontaminant and Process for Decontamination of Chemicals from Infrastructural Materials
US11978622B2 (en) * 2014-06-30 2024-05-07 Entegris, Inc. Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility
CN107075411A (zh) * 2014-09-18 2017-08-18 应用材料公司 使用经设计的黏性流体的高效率后cmp清洗的方法与设备
CN116288366A (zh) * 2014-10-21 2023-06-23 Cmc材料股份有限公司 腐蚀抑制剂以及相关的组合物及方法
WO2016069576A1 (en) * 2014-10-31 2016-05-06 Entegris, Inc. Non-amine post-cmp compositions and method of use
JP6454928B2 (ja) * 2015-03-11 2019-01-23 上村工業株式会社 無電解めっき用処理剤、およびこれを用いたプリント配線基板とパッケージの製造方法
WO2017086758A1 (ko) * 2015-11-19 2017-05-26 오씨아이 주식회사 구리 식각용 조성물 및 과산화수소계 금속 식각용 조성물
KR20180091928A (ko) * 2015-12-22 2018-08-16 바스프 에스이 화학적-기계적-연마 후 세척용 조성물
JP6886469B2 (ja) 2015-12-22 2021-06-16 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se 化学機械研磨後の洗浄組成物
US10418248B2 (en) * 2016-02-16 2019-09-17 Cabot Microelectronics Corporation Method of polishing group III-V materials
WO2017156304A1 (en) * 2016-03-09 2017-09-14 Entegris, Inc. Tungsten post-cmp cleaning compositions
CN105802763B (zh) * 2016-04-13 2018-08-03 乌鲁木齐市疾病预防控制中心 一种光谱分析仪器进样管路汞污染清洗剂
US9685406B1 (en) 2016-04-18 2017-06-20 International Business Machines Corporation Selective and non-selective barrier layer wet removal
JP6932147B2 (ja) * 2016-06-10 2021-09-08 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se 化学機械研磨後洗浄のための組成物
TWI660017B (zh) * 2016-07-14 2019-05-21 卡博特微電子公司 用於鈷化學機械拋光(cmp)之替代氧化劑
CA3034712C (en) * 2016-08-24 2021-10-12 Ppg Industries Ohio, Inc. Alkaline composition for treating metal substartes
US10431464B2 (en) 2016-10-17 2019-10-01 International Business Machines Corporation Liner planarization-free process flow for fabricating metallic interconnect structures
JP2020513440A (ja) 2016-11-25 2020-05-14 インテグリス・インコーポレーテッド エッチング後残留物を除去するための洗浄組成物
JP7122258B2 (ja) * 2017-01-17 2022-08-19 株式会社ダイセル 半導体基板洗浄剤
EP3589778A4 (de) * 2017-02-28 2020-12-09 Ecolab USA Inc. Alkalische reinigungszusammensetzung mit einer hydroxyphosphonocarbonsäure und verfahren zur verringerung der metallkorrosion
EP3604475A4 (de) * 2017-03-23 2020-12-23 Fujimi Incorporated Polierzusammensetzung
AT519894A1 (de) * 2017-04-29 2018-11-15 Thonhauser Gmbh Reinigungsverfahren
KR102422952B1 (ko) 2017-06-12 2022-07-19 삼성전자주식회사 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
CN107338126A (zh) * 2017-06-23 2017-11-10 昆山欣谷微电子材料有限公司 一种水基微电子剥离和清洗液组合物
JP6498734B2 (ja) * 2017-08-24 2019-04-10 攝津製油株式会社 洗浄剤組成物、洗浄剤、及び洗浄方法
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
US10672653B2 (en) 2017-12-18 2020-06-02 International Business Machines Corporation Metallic interconnect structures with wrap around capping layers
EP3743773B1 (de) * 2018-01-25 2022-04-06 Merck Patent GmbH Photolackentfernerzusammensetzungen
US11085011B2 (en) 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
CN109179965B (zh) * 2018-11-01 2020-11-17 中国农业大学 一种用于污泥高效脱水的复配调理剂及污泥脱水方法
KR20200077912A (ko) * 2018-12-21 2020-07-01 주식회사 케이씨텍 세정액 조성물 및 그것을 이용한 세정 방법
TW202037758A (zh) * 2019-01-15 2020-10-16 德商德國艾托特克公司 在銅表面形成氧化銅之方法
JP7262596B2 (ja) * 2019-02-08 2023-04-21 インテグリス・インコーポレーテッド セリア除去用組成物
US11312922B2 (en) 2019-04-12 2022-04-26 Ecolab Usa Inc. Antimicrobial multi-purpose cleaner comprising a sulfonic acid-containing surfactant and methods of making and using the same
JP2020188090A (ja) * 2019-05-13 2020-11-19 Jsr株式会社 コバルトを含む基板を処理するための半導体洗浄用または化学機械研磨用組成物
WO2021005140A1 (en) * 2019-07-11 2021-01-14 Merck Patent Gmbh Photoresist remover compositions
CN111269761B (zh) * 2020-02-13 2021-04-27 金丝甲(上海)安全防范技术有限公司 洗消液及其用于锕系核素和过渡金属核素污染洗消的用途
KR20220012521A (ko) * 2020-07-23 2022-02-04 주식회사 케이씨텍 세정액 조성물 및 이를 이용한 세정 방법
TWI824299B (zh) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物
KR102284465B1 (ko) * 2020-09-24 2021-08-02 양영수 스텐레스 용기의 제조방법
WO2022212865A1 (en) 2021-04-01 2022-10-06 Sterilex, Llc Quat-free powdered disinfectant/sanitizer
CN114854500A (zh) * 2022-05-12 2022-08-05 常州时创能源股份有限公司 一种硅片清洗用添加剂、清洗液及硅片制绒后清洗方法
KR20240041391A (ko) * 2022-09-22 2024-04-01 한양대학교 산학협력단 세정 조성물 및 이를 이용한 기판의 세정방법

Family Cites Families (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5320709A (en) 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
WO1998021415A1 (en) 1996-11-12 1998-05-22 H.B. Zachry Company Precast, modular spar system
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US6280651B1 (en) 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
US6211126B1 (en) 1997-12-23 2001-04-03 Advanced Technology Materials, Inc. Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
CA2332390A1 (en) 1998-05-18 1999-11-25 Advanced Technology Materials, Inc. Stripping compositions for semiconductor substrates
US6875733B1 (en) 1998-10-14 2005-04-05 Advanced Technology Materials, Inc. Ammonium borate containing compositions for stripping residues from semiconductor substrates
US6344432B1 (en) 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6361407B1 (en) * 2000-08-02 2002-03-26 Memc Electronic Materials, Inc. Method of polishing a semiconductor wafer
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6566315B2 (en) 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6627587B2 (en) 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US20030119692A1 (en) 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
US6773873B2 (en) 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
JP4304154B2 (ja) 2002-06-07 2009-07-29 マリンクロッド・ベイカー・インコーポレイテッド 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US8236485B2 (en) 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
TWI258504B (en) * 2003-01-07 2006-07-21 Tosoh Corp Washing solution and washing method using the same
US7736405B2 (en) 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7056648B2 (en) 2003-09-17 2006-06-06 International Business Machines Corporation Method for isotropic etching of copper
BRPI0416067A (pt) * 2003-10-29 2007-01-02 Mallinckrodt Baker Inc removedores alcalinos de resìduo de cinza/gravação pós-plasma e composições de descascamento de fotorresistes contendo inibidores de corrosão de haleto de metal
JP2007519942A (ja) 2003-12-02 2007-07-19 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド レジスト、barc、およびギャップフィル材料を剥離する化学物質ならびに方法
US20050145311A1 (en) 2003-12-30 2005-07-07 Walker Elizabeth L. Method for monitoring surface treatment of copper containing devices
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US7253111B2 (en) 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
WO2006009668A1 (en) * 2004-06-16 2006-01-26 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
US20060063687A1 (en) 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
US20060148666A1 (en) 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US20060154186A1 (en) 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
WO2006086265A2 (en) * 2005-02-07 2006-08-17 Applied Materials, Inc. Method and composition for polishing a substrate
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
WO2006110645A2 (en) 2005-04-11 2006-10-19 Advanced Technology Materials, Inc. Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
US20070251551A1 (en) 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
CN101233456B (zh) 2005-06-07 2013-01-02 高级技术材料公司 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物
CN101233601A (zh) 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
WO2007027522A2 (en) 2005-08-29 2007-03-08 Advanced Technology Materials, Inc. Composition and method for removing thick film photoresist
EP1932174A4 (de) * 2005-10-05 2009-09-23 Advanced Tech Materials Oxidierende wässrige reiniger zur entfernung von nachätzresten
KR20080059429A (ko) 2005-10-05 2008-06-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 게이트 스페이서 산화물 재료를 선택적으로 에칭하기 위한조성물 및 방법
EP1945748A4 (de) 2005-10-13 2009-01-07 Advanced Tech Materials Mit metallen kompatible fotolack- und/oder opfer-antireflexions-beschichtungsentfernungszusammensetzung
US7960328B2 (en) 2005-11-09 2011-06-14 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
TW200734448A (en) 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2008039730A1 (en) 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20080125342A1 (en) 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
SG177201A1 (en) 2006-12-21 2012-01-30 Advanced Tech Materials Compositions and methods for the selective removal of silicon nitride
JP5237300B2 (ja) 2006-12-21 2013-07-17 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド エッチング後残留物を除去するための液体洗浄剤
TWI516573B (zh) 2007-02-06 2016-01-11 安堤格里斯公司 選擇性移除TiSiN之組成物及方法
JP5146445B2 (ja) 2007-03-16 2013-02-20 三菱瓦斯化学株式会社 洗浄用組成物、半導体素子の製造方法
US20100112728A1 (en) 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
US7976723B2 (en) 2007-05-17 2011-07-12 International Business Machines Corporation Method for kinetically controlled etching of copper
TW200918664A (en) 2007-06-13 2009-05-01 Advanced Tech Materials Wafer reclamation compositions and methods
WO2009032460A1 (en) 2007-08-02 2009-03-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
US20110039747A1 (en) 2007-08-20 2011-02-17 Advanced Technology Materials, Inc. Composition and method for removing ion-implanted photoresist
JP5286290B2 (ja) * 2008-02-15 2013-09-11 ライオン株式会社 洗浄剤組成物および電子デバイス用基板の洗浄方法、並びに電子デバイス用基板
WO2009111719A2 (en) 2008-03-07 2009-09-11 Advanced Technology Materials, Inc. Non-selective oxide etch wet clean composition and method of use
US8026200B2 (en) 2008-05-01 2011-09-27 Advanced Technology Materials, Inc. Low pH mixtures for the removal of high density implanted resist
CN102216854A (zh) 2008-08-04 2011-10-12 高级技术材料公司 环境友好型聚合物剥离组合物
US8252119B2 (en) * 2008-08-20 2012-08-28 Micron Technology, Inc. Microelectronic substrate cleaning systems with polyelectrolyte and associated methods
JP2012504871A (ja) 2008-10-02 2012-02-23 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 高度な金属負荷及びシリコン基板の表面パッシベーションのための界面活性剤/消泡剤混合物の使用
WO2010048139A2 (en) 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
SG173172A1 (en) 2009-01-28 2011-08-29 Advanced Tech Materials Lithographic tool in situ clean formulations
WO2010086745A1 (en) 2009-02-02 2010-08-05 Atmi Taiwan Co., Ltd. Method of etching lanthanum-containing oxide layers
WO2010091045A2 (en) 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
JP2011205058A (ja) 2009-12-17 2011-10-13 Rohm & Haas Electronic Materials Llc 半導体基体をテクスチャ化する改良された方法
CN104804903B (zh) 2010-01-29 2018-10-30 恩特格里斯公司 附有金属布线的半导体用清洗剂
TWI548738B (zh) 2010-07-16 2016-09-11 安堤格里斯公司 用於移除蝕刻後殘餘物之水性清潔劑
JP2012036750A (ja) 2010-08-04 2012-02-23 Panasonic Corp 圧縮機
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
KR20130100297A (ko) 2010-08-27 2013-09-10 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 건조 동안의 높은 종횡비 구조물의 붕괴 방지 방법
WO2012048079A2 (en) 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
KR20140008995A (ko) 2010-11-19 2014-01-22 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체 기판의 세정용 액체 조성물 및 이를 이용한 반도체 기판의 세정 방법
WO2012097143A2 (en) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium- containing solutions
JP2012186470A (ja) 2011-02-18 2012-09-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2012251026A (ja) 2011-05-31 2012-12-20 Sanyo Chem Ind Ltd 半導体用洗浄剤
TW201311869A (zh) 2011-06-16 2013-03-16 Advanced Tech Materials 選擇性蝕刻氮化矽之組成物及方法
US9257270B2 (en) 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
US20130045908A1 (en) 2011-08-15 2013-02-21 Hua Cui Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅または銅合金用エッチング液
US8618036B2 (en) 2011-11-14 2013-12-31 International Business Machines Corporation Aqueous cerium-containing solution having an extended bath lifetime for removing mask material
JP6066552B2 (ja) 2011-12-06 2017-01-25 関東化學株式会社 電子デバイス用洗浄液組成物
WO2013101907A1 (en) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2013138278A1 (en) 2012-03-12 2013-09-19 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
SG11201405638UA (en) 2012-03-12 2014-10-30 Entegris Inc Methods for the selective removal of ashed spin-on glass
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same

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TWI600756B (zh) 2017-10-01
CN104508072A (zh) 2015-04-08
EP2814895A4 (de) 2015-10-07
WO2013123317A1 (en) 2013-08-22
US10176979B2 (en) 2019-01-08
US20160020087A1 (en) 2016-01-21
EP2814895A1 (de) 2014-12-24
TW201343905A (zh) 2013-11-01
KR20140139498A (ko) 2014-12-05
JP2015512971A (ja) 2015-04-30

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