SG11201404930SA - Post-cmp removal using compositions and method of use - Google Patents
Post-cmp removal using compositions and method of useInfo
- Publication number
- SG11201404930SA SG11201404930SA SG11201404930SA SG11201404930SA SG11201404930SA SG 11201404930S A SG11201404930S A SG 11201404930SA SG 11201404930S A SG11201404930S A SG 11201404930SA SG 11201404930S A SG11201404930S A SG 11201404930SA SG 11201404930S A SG11201404930S A SG 11201404930SA
- Authority
- SG
- Singapore
- Prior art keywords
- compositions
- post
- cmp removal
- cmp
- removal
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2041—Dihydric alcohols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2079—Monocarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3942—Inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261599162P | 2012-02-15 | 2012-02-15 | |
US201261651287P | 2012-05-24 | 2012-05-24 | |
US201261656992P | 2012-06-07 | 2012-06-07 | |
US201261661160P | 2012-06-18 | 2012-06-18 | |
PCT/US2013/026326 WO2013123317A1 (en) | 2012-02-15 | 2013-02-15 | Post-cmp removal using compositions and method of use |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201404930SA true SG11201404930SA (en) | 2014-09-26 |
Family
ID=48984743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404930SA SG11201404930SA (en) | 2012-02-15 | 2013-02-15 | Post-cmp removal using compositions and method of use |
Country Status (8)
Country | Link |
---|---|
US (1) | US10176979B2 (de) |
EP (1) | EP2814895A4 (de) |
JP (1) | JP2015512971A (de) |
KR (1) | KR102105381B1 (de) |
CN (1) | CN104508072A (de) |
SG (1) | SG11201404930SA (de) |
TW (1) | TWI600756B (de) |
WO (1) | WO2013123317A1 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6041624B2 (ja) * | 2012-10-31 | 2016-12-14 | 株式会社ネオス | シリカスケール除去剤組成物 |
US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
TWI655273B (zh) | 2013-03-04 | 2019-04-01 | 美商恩特葛瑞斯股份有限公司 | 選擇性蝕刻氮化鈦之組成物及方法 |
US9365934B2 (en) * | 2013-04-12 | 2016-06-14 | Mitsubishi Gas Chemical Company, Inc. | Liquid composition used in etching copper- and titanium-containing multilayer film, etching method in which said composition is used, method for manufacturing multilayer-film wiring, and substrate |
US10920141B2 (en) | 2013-06-06 | 2021-02-16 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
CN112442374A (zh) | 2013-07-31 | 2021-03-05 | 恩特格里斯公司 | 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂 |
US10428271B2 (en) | 2013-08-30 | 2019-10-01 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
CN103556164B (zh) * | 2013-10-28 | 2015-08-19 | 沈阳大学 | 一种钛铝铬氮化物硬质反应膜的退除方法 |
TWI654340B (zh) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ni:NiGe:Ge選擇性蝕刻配方及其使用方法 |
KR102352475B1 (ko) | 2013-12-20 | 2022-01-18 | 엔테그리스, 아이엔씨. | 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도 |
US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
WO2015116679A1 (en) * | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
US20160340620A1 (en) | 2014-01-29 | 2016-11-24 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
WO2015119925A1 (en) * | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
US20150344822A1 (en) * | 2014-06-02 | 2015-12-03 | Tetra Tech, Inc. | Decontaminant and Process for Decontamination of Chemicals from Infrastructural Materials |
US11978622B2 (en) * | 2014-06-30 | 2024-05-07 | Entegris, Inc. | Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility |
CN107075411A (zh) * | 2014-09-18 | 2017-08-18 | 应用材料公司 | 使用经设计的黏性流体的高效率后cmp清洗的方法与设备 |
CN116288366A (zh) * | 2014-10-21 | 2023-06-23 | Cmc材料股份有限公司 | 腐蚀抑制剂以及相关的组合物及方法 |
WO2016069576A1 (en) * | 2014-10-31 | 2016-05-06 | Entegris, Inc. | Non-amine post-cmp compositions and method of use |
JP6454928B2 (ja) * | 2015-03-11 | 2019-01-23 | 上村工業株式会社 | 無電解めっき用処理剤、およびこれを用いたプリント配線基板とパッケージの製造方法 |
WO2017086758A1 (ko) * | 2015-11-19 | 2017-05-26 | 오씨아이 주식회사 | 구리 식각용 조성물 및 과산화수소계 금속 식각용 조성물 |
KR20180091928A (ko) * | 2015-12-22 | 2018-08-16 | 바스프 에스이 | 화학적-기계적-연마 후 세척용 조성물 |
JP6886469B2 (ja) | 2015-12-22 | 2021-06-16 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | 化学機械研磨後の洗浄組成物 |
US10418248B2 (en) * | 2016-02-16 | 2019-09-17 | Cabot Microelectronics Corporation | Method of polishing group III-V materials |
WO2017156304A1 (en) * | 2016-03-09 | 2017-09-14 | Entegris, Inc. | Tungsten post-cmp cleaning compositions |
CN105802763B (zh) * | 2016-04-13 | 2018-08-03 | 乌鲁木齐市疾病预防控制中心 | 一种光谱分析仪器进样管路汞污染清洗剂 |
US9685406B1 (en) | 2016-04-18 | 2017-06-20 | International Business Machines Corporation | Selective and non-selective barrier layer wet removal |
JP6932147B2 (ja) * | 2016-06-10 | 2021-09-08 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | 化学機械研磨後洗浄のための組成物 |
TWI660017B (zh) * | 2016-07-14 | 2019-05-21 | 卡博特微電子公司 | 用於鈷化學機械拋光(cmp)之替代氧化劑 |
CA3034712C (en) * | 2016-08-24 | 2021-10-12 | Ppg Industries Ohio, Inc. | Alkaline composition for treating metal substartes |
US10431464B2 (en) | 2016-10-17 | 2019-10-01 | International Business Machines Corporation | Liner planarization-free process flow for fabricating metallic interconnect structures |
JP2020513440A (ja) | 2016-11-25 | 2020-05-14 | インテグリス・インコーポレーテッド | エッチング後残留物を除去するための洗浄組成物 |
JP7122258B2 (ja) * | 2017-01-17 | 2022-08-19 | 株式会社ダイセル | 半導体基板洗浄剤 |
EP3589778A4 (de) * | 2017-02-28 | 2020-12-09 | Ecolab USA Inc. | Alkalische reinigungszusammensetzung mit einer hydroxyphosphonocarbonsäure und verfahren zur verringerung der metallkorrosion |
EP3604475A4 (de) * | 2017-03-23 | 2020-12-23 | Fujimi Incorporated | Polierzusammensetzung |
AT519894A1 (de) * | 2017-04-29 | 2018-11-15 | Thonhauser Gmbh | Reinigungsverfahren |
KR102422952B1 (ko) | 2017-06-12 | 2022-07-19 | 삼성전자주식회사 | 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
CN107338126A (zh) * | 2017-06-23 | 2017-11-10 | 昆山欣谷微电子材料有限公司 | 一种水基微电子剥离和清洗液组合物 |
JP6498734B2 (ja) * | 2017-08-24 | 2019-04-10 | 攝津製油株式会社 | 洗浄剤組成物、洗浄剤、及び洗浄方法 |
US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
US10672653B2 (en) | 2017-12-18 | 2020-06-02 | International Business Machines Corporation | Metallic interconnect structures with wrap around capping layers |
EP3743773B1 (de) * | 2018-01-25 | 2022-04-06 | Merck Patent GmbH | Photolackentfernerzusammensetzungen |
US11085011B2 (en) | 2018-08-28 | 2021-08-10 | Entegris, Inc. | Post CMP cleaning compositions for ceria particles |
CN109179965B (zh) * | 2018-11-01 | 2020-11-17 | 中国农业大学 | 一种用于污泥高效脱水的复配调理剂及污泥脱水方法 |
KR20200077912A (ko) * | 2018-12-21 | 2020-07-01 | 주식회사 케이씨텍 | 세정액 조성물 및 그것을 이용한 세정 방법 |
TW202037758A (zh) * | 2019-01-15 | 2020-10-16 | 德商德國艾托特克公司 | 在銅表面形成氧化銅之方法 |
JP7262596B2 (ja) * | 2019-02-08 | 2023-04-21 | インテグリス・インコーポレーテッド | セリア除去用組成物 |
US11312922B2 (en) | 2019-04-12 | 2022-04-26 | Ecolab Usa Inc. | Antimicrobial multi-purpose cleaner comprising a sulfonic acid-containing surfactant and methods of making and using the same |
JP2020188090A (ja) * | 2019-05-13 | 2020-11-19 | Jsr株式会社 | コバルトを含む基板を処理するための半導体洗浄用または化学機械研磨用組成物 |
WO2021005140A1 (en) * | 2019-07-11 | 2021-01-14 | Merck Patent Gmbh | Photoresist remover compositions |
CN111269761B (zh) * | 2020-02-13 | 2021-04-27 | 金丝甲(上海)安全防范技术有限公司 | 洗消液及其用于锕系核素和过渡金属核素污染洗消的用途 |
KR20220012521A (ko) * | 2020-07-23 | 2022-02-04 | 주식회사 케이씨텍 | 세정액 조성물 및 이를 이용한 세정 방법 |
TWI824299B (zh) * | 2020-09-22 | 2023-12-01 | 美商恩特葛瑞斯股份有限公司 | 蝕刻劑組合物 |
KR102284465B1 (ko) * | 2020-09-24 | 2021-08-02 | 양영수 | 스텐레스 용기의 제조방법 |
WO2022212865A1 (en) | 2021-04-01 | 2022-10-06 | Sterilex, Llc | Quat-free powdered disinfectant/sanitizer |
CN114854500A (zh) * | 2022-05-12 | 2022-08-05 | 常州时创能源股份有限公司 | 一种硅片清洗用添加剂、清洗液及硅片制绒后清洗方法 |
KR20240041391A (ko) * | 2022-09-22 | 2024-04-01 | 한양대학교 산학협력단 | 세정 조성물 및 이를 이용한 기판의 세정방법 |
Family Cites Families (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5320709A (en) | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
US6323168B1 (en) | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
US7534752B2 (en) | 1996-07-03 | 2009-05-19 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
WO1998021415A1 (en) | 1996-11-12 | 1998-05-22 | H.B. Zachry Company | Precast, modular spar system |
US6755989B2 (en) | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6896826B2 (en) | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US8092707B2 (en) | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
US6280651B1 (en) | 1998-12-16 | 2001-08-28 | Advanced Technology Materials, Inc. | Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent |
US6211126B1 (en) | 1997-12-23 | 2001-04-03 | Advanced Technology Materials, Inc. | Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
CA2332390A1 (en) | 1998-05-18 | 1999-11-25 | Advanced Technology Materials, Inc. | Stripping compositions for semiconductor substrates |
US6875733B1 (en) | 1998-10-14 | 2005-04-05 | Advanced Technology Materials, Inc. | Ammonium borate containing compositions for stripping residues from semiconductor substrates |
US6344432B1 (en) | 1999-08-20 | 2002-02-05 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
US6194366B1 (en) | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6492308B1 (en) | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6723691B2 (en) | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6927176B2 (en) * | 2000-06-26 | 2005-08-09 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
US6361407B1 (en) * | 2000-08-02 | 2002-03-26 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
US6566315B2 (en) | 2000-12-08 | 2003-05-20 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
US6627587B2 (en) | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
US20030119692A1 (en) | 2001-12-07 | 2003-06-26 | So Joseph K. | Copper polishing cleaning solution |
US6773873B2 (en) | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
JP4304154B2 (ja) | 2002-06-07 | 2009-07-29 | マリンクロッド・ベイカー・インコーポレイテッド | 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物 |
US6849200B2 (en) | 2002-07-23 | 2005-02-01 | Advanced Technology Materials, Inc. | Composition and process for wet stripping removal of sacrificial anti-reflective material |
US8236485B2 (en) | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
TWI258504B (en) * | 2003-01-07 | 2006-07-21 | Tosoh Corp | Washing solution and washing method using the same |
US7736405B2 (en) | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
US7056648B2 (en) | 2003-09-17 | 2006-06-06 | International Business Machines Corporation | Method for isotropic etching of copper |
BRPI0416067A (pt) * | 2003-10-29 | 2007-01-02 | Mallinckrodt Baker Inc | removedores alcalinos de resìduo de cinza/gravação pós-plasma e composições de descascamento de fotorresistes contendo inibidores de corrosão de haleto de metal |
JP2007519942A (ja) | 2003-12-02 | 2007-07-19 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | レジスト、barc、およびギャップフィル材料を剥離する化学物質ならびに方法 |
US20050145311A1 (en) | 2003-12-30 | 2005-07-07 | Walker Elizabeth L. | Method for monitoring surface treatment of copper containing devices |
US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US8338087B2 (en) | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US7253111B2 (en) | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
WO2006009668A1 (en) * | 2004-06-16 | 2006-01-26 | Memc Electronic Materials, Inc. | Silicon wafer etching process and composition |
US20060063687A1 (en) | 2004-09-17 | 2006-03-23 | Minsek David W | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate |
US20060148666A1 (en) | 2004-12-30 | 2006-07-06 | Advanced Technology Materials Inc. | Aqueous cleaner with low metal etch rate |
US20060154186A1 (en) | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
US7923423B2 (en) | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
WO2006086265A2 (en) * | 2005-02-07 | 2006-08-17 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7365045B2 (en) | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
WO2006110645A2 (en) | 2005-04-11 | 2006-10-19 | Advanced Technology Materials, Inc. | Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices |
US20070251551A1 (en) | 2005-04-15 | 2007-11-01 | Korzenski Michael B | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
CN101233456B (zh) | 2005-06-07 | 2013-01-02 | 高级技术材料公司 | 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物 |
CN101233601A (zh) | 2005-06-13 | 2008-07-30 | 高级技术材料公司 | 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法 |
WO2007027522A2 (en) | 2005-08-29 | 2007-03-08 | Advanced Technology Materials, Inc. | Composition and method for removing thick film photoresist |
EP1932174A4 (de) * | 2005-10-05 | 2009-09-23 | Advanced Tech Materials | Oxidierende wässrige reiniger zur entfernung von nachätzresten |
KR20080059429A (ko) | 2005-10-05 | 2008-06-27 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 게이트 스페이서 산화물 재료를 선택적으로 에칭하기 위한조성물 및 방법 |
EP1945748A4 (de) | 2005-10-13 | 2009-01-07 | Advanced Tech Materials | Mit metallen kompatible fotolack- und/oder opfer-antireflexions-beschichtungsentfernungszusammensetzung |
US7960328B2 (en) | 2005-11-09 | 2011-06-14 | Advanced Technology Materials, Inc. | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon |
TW200734448A (en) | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
US20080076688A1 (en) | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
WO2008039730A1 (en) | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
US20080125342A1 (en) | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
SG177201A1 (en) | 2006-12-21 | 2012-01-30 | Advanced Tech Materials | Compositions and methods for the selective removal of silicon nitride |
JP5237300B2 (ja) | 2006-12-21 | 2013-07-17 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | エッチング後残留物を除去するための液体洗浄剤 |
TWI516573B (zh) | 2007-02-06 | 2016-01-11 | 安堤格里斯公司 | 選擇性移除TiSiN之組成物及方法 |
JP5146445B2 (ja) | 2007-03-16 | 2013-02-20 | 三菱瓦斯化学株式会社 | 洗浄用組成物、半導体素子の製造方法 |
US20100112728A1 (en) | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
US7976723B2 (en) | 2007-05-17 | 2011-07-12 | International Business Machines Corporation | Method for kinetically controlled etching of copper |
TW200918664A (en) | 2007-06-13 | 2009-05-01 | Advanced Tech Materials | Wafer reclamation compositions and methods |
WO2009032460A1 (en) | 2007-08-02 | 2009-03-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of residue from a microelectronic device |
US20110039747A1 (en) | 2007-08-20 | 2011-02-17 | Advanced Technology Materials, Inc. | Composition and method for removing ion-implanted photoresist |
JP5286290B2 (ja) * | 2008-02-15 | 2013-09-11 | ライオン株式会社 | 洗浄剤組成物および電子デバイス用基板の洗浄方法、並びに電子デバイス用基板 |
WO2009111719A2 (en) | 2008-03-07 | 2009-09-11 | Advanced Technology Materials, Inc. | Non-selective oxide etch wet clean composition and method of use |
US8026200B2 (en) | 2008-05-01 | 2011-09-27 | Advanced Technology Materials, Inc. | Low pH mixtures for the removal of high density implanted resist |
CN102216854A (zh) | 2008-08-04 | 2011-10-12 | 高级技术材料公司 | 环境友好型聚合物剥离组合物 |
US8252119B2 (en) * | 2008-08-20 | 2012-08-28 | Micron Technology, Inc. | Microelectronic substrate cleaning systems with polyelectrolyte and associated methods |
JP2012504871A (ja) | 2008-10-02 | 2012-02-23 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 高度な金属負荷及びシリコン基板の表面パッシベーションのための界面活性剤/消泡剤混合物の使用 |
WO2010048139A2 (en) | 2008-10-21 | 2010-04-29 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
SG173172A1 (en) | 2009-01-28 | 2011-08-29 | Advanced Tech Materials | Lithographic tool in situ clean formulations |
WO2010086745A1 (en) | 2009-02-02 | 2010-08-05 | Atmi Taiwan Co., Ltd. | Method of etching lanthanum-containing oxide layers |
WO2010091045A2 (en) | 2009-02-05 | 2010-08-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of polymers and other organic material from a surface |
US8754021B2 (en) | 2009-02-27 | 2014-06-17 | Advanced Technology Materials, Inc. | Non-amine post-CMP composition and method of use |
JP2011205058A (ja) | 2009-12-17 | 2011-10-13 | Rohm & Haas Electronic Materials Llc | 半導体基体をテクスチャ化する改良された方法 |
CN104804903B (zh) | 2010-01-29 | 2018-10-30 | 恩特格里斯公司 | 附有金属布线的半导体用清洗剂 |
TWI548738B (zh) | 2010-07-16 | 2016-09-11 | 安堤格里斯公司 | 用於移除蝕刻後殘餘物之水性清潔劑 |
JP2012036750A (ja) | 2010-08-04 | 2012-02-23 | Panasonic Corp | 圧縮機 |
JP6101421B2 (ja) | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
KR20130100297A (ko) | 2010-08-27 | 2013-09-10 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 건조 동안의 높은 종횡비 구조물의 붕괴 방지 방법 |
WO2012048079A2 (en) | 2010-10-06 | 2012-04-12 | Advanced Technology Materials, Inc. | Composition and process for selectively etching metal nitrides |
KR101891363B1 (ko) | 2010-10-13 | 2018-08-24 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법 |
KR20140008995A (ko) | 2010-11-19 | 2014-01-22 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 반도체 기판의 세정용 액체 조성물 및 이를 이용한 반도체 기판의 세정 방법 |
WO2012097143A2 (en) | 2011-01-13 | 2012-07-19 | Advanced Technology Materials, Inc. | Formulations for the removal of particles generated by cerium- containing solutions |
JP2012186470A (ja) | 2011-02-18 | 2012-09-27 | Sanyo Chem Ind Ltd | 銅配線半導体用洗浄剤 |
JP2012251026A (ja) | 2011-05-31 | 2012-12-20 | Sanyo Chem Ind Ltd | 半導体用洗浄剤 |
TW201311869A (zh) | 2011-06-16 | 2013-03-16 | Advanced Tech Materials | 選擇性蝕刻氮化矽之組成物及方法 |
US9257270B2 (en) | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
US20130045908A1 (en) | 2011-08-15 | 2013-02-21 | Hua Cui | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
JP5933950B2 (ja) | 2011-09-30 | 2016-06-15 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 銅または銅合金用エッチング液 |
US8618036B2 (en) | 2011-11-14 | 2013-12-31 | International Business Machines Corporation | Aqueous cerium-containing solution having an extended bath lifetime for removing mask material |
JP6066552B2 (ja) | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
WO2013101907A1 (en) | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
WO2013138278A1 (en) | 2012-03-12 | 2013-09-19 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
SG11201405638UA (en) | 2012-03-12 | 2014-10-30 | Entegris Inc | Methods for the selective removal of ashed spin-on glass |
US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
-
2013
- 2013-02-15 CN CN201380018815.6A patent/CN104508072A/zh active Pending
- 2013-02-15 JP JP2014557813A patent/JP2015512971A/ja active Pending
- 2013-02-15 WO PCT/US2013/026326 patent/WO2013123317A1/en active Application Filing
- 2013-02-15 SG SG11201404930SA patent/SG11201404930SA/en unknown
- 2013-02-15 US US14/378,842 patent/US10176979B2/en active Active
- 2013-02-15 KR KR1020147025340A patent/KR102105381B1/ko active IP Right Grant
- 2013-02-15 EP EP13749640.2A patent/EP2814895A4/de not_active Withdrawn
- 2013-02-18 TW TW102105519A patent/TWI600756B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR102105381B1 (ko) | 2020-04-29 |
TWI600756B (zh) | 2017-10-01 |
CN104508072A (zh) | 2015-04-08 |
EP2814895A4 (de) | 2015-10-07 |
WO2013123317A1 (en) | 2013-08-22 |
US10176979B2 (en) | 2019-01-08 |
US20160020087A1 (en) | 2016-01-21 |
EP2814895A1 (de) | 2014-12-24 |
TW201343905A (zh) | 2013-11-01 |
KR20140139498A (ko) | 2014-12-05 |
JP2015512971A (ja) | 2015-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201404930SA (en) | Post-cmp removal using compositions and method of use | |
HK1251246A1 (zh) | 用於使組合物脫硫的方法和組合物 | |
AP3965A (en) | Anthelminitic compounds and compositions and method of using thereof | |
HK1206776A1 (en) | Improved cleaning formulation and method | |
HK1210957A1 (en) | Effluz inhibitor compositions and methods of treatment using the same | |
HK1214521A1 (zh) | 用於治療蛋白質病的組合物和方法 | |
EP2675471A4 (de) | Mit hsa zusammenhängende zusammensetzungen und verwendungsverfahren | |
EP2861227A4 (de) | Omega-3 pentaensäurezusammensetzungen und verfahren zur verwendung | |
EP2834322A4 (de) | Biokohlezusammensetzungen und verfahren zur verwendung davon | |
EP2836212A4 (de) | Neuartige zusammensetzungen und verfahren | |
ZA201408594B (en) | Xylitol-based anti-mucosal compositions and related methods and compositions | |
EP2771030A4 (de) | Zusammensetzungen und verfahren zur behandlung von proteinopathien | |
EP2768920A4 (de) | Aminfreie post-kmp-zusammensetzung und anwendungsverfahren dafür | |
EP2704688A4 (de) | Cochleatzusammensetzungen sowie verfahren zu ihrer herstellung und verwendung | |
EP2838633A4 (de) | Demulgatorzusammensetzung und verfahren zur verwendung davon | |
PL2785823T3 (pl) | Kompozycje i sposoby do czyszczenia | |
EP2906041A4 (de) | Zusammensetzungen und verfahren zur verwendung in einer inappetenzsteuerungsverbindung | |
GB201315350D0 (en) | Methods and compositions | |
EP2827363A4 (de) | Ätzlösungszusammensetzung und ätzverfahren | |
EP2755668A4 (de) | Zusammensetzungen aus hyr1 und behandlungsverfahren damit | |
GB201315347D0 (en) | Methods and compositions | |
EP2807256A4 (de) | Myonectin (ctrp15), zusammensetzungen damit und verwendungsverfahren | |
ZA201408062B (en) | Compositions and methods for the treatment of multiple sclerosis | |
ZA201308892B (en) | Compositions and methods | |
EP2931280A4 (de) | Verfahren und zusammensetzungen zur hemmung von cnksr1 |