SG108975A1 - Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern - Google Patents

Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern

Info

Publication number
SG108975A1
SG108975A1 SG200404319A SG200404319A SG108975A1 SG 108975 A1 SG108975 A1 SG 108975A1 SG 200404319 A SG200404319 A SG 200404319A SG 200404319 A SG200404319 A SG 200404319A SG 108975 A1 SG108975 A1 SG 108975A1
Authority
SG
Singapore
Prior art keywords
mask pattern
marker structure
pattern
overlay
alignment
Prior art date
Application number
SG200404319A
Other languages
English (en)
Inventor
Jozef Maria Finders
Mircea Dusa
Haren Van
Johannes Franciscus Richard
Luis Alberto Colina San Colina
Eric Henri Jan Hendrickx
Geert Vandenberghe
Der Hoff Van
Hendrikus Martinus Alexander
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG108975A1 publication Critical patent/SG108975A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
SG200404319A 2003-07-11 2004-07-06 Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern SG108975A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03077203 2003-07-11

Publications (1)

Publication Number Publication Date
SG108975A1 true SG108975A1 (en) 2005-02-28

Family

ID=34112461

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200404319A SG108975A1 (en) 2003-07-11 2004-07-06 Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern

Country Status (6)

Country Link
US (2) US7466413B2 (ja)
JP (2) JP2005031681A (ja)
KR (2) KR100933731B1 (ja)
CN (2) CN102520594A (ja)
SG (1) SG108975A1 (ja)
TW (1) TWI243408B (ja)

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CN103901740A (zh) * 2012-12-24 2014-07-02 上海华虹宏力半导体制造有限公司 光刻对准标记的放置方法
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US10935893B2 (en) * 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
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CN105023911B (zh) * 2014-04-15 2018-05-25 联华电子股份有限公司 标记分段方法及应用其的半导体结构制造方法
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US10283456B2 (en) * 2015-10-26 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography engraving machine for forming water identification marks and aligment marks
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JP6952711B2 (ja) * 2016-04-04 2021-10-20 ケーエルエー コーポレイション ターゲットデザイン方法、製造方法及び計量ターゲット
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JP7339826B2 (ja) * 2019-09-19 2023-09-06 キヤノン株式会社 マーク位置決定方法、リソグラフィー方法、物品製造方法、プログラムおよびリソグラフィー装置
CN113552767A (zh) * 2020-04-23 2021-10-26 无锡华润上华科技有限公司 光刻版及集成电路的制造方法
CN113809047B (zh) * 2020-06-12 2024-02-06 长鑫存储技术有限公司 半导体结构及其制备方法
CN112631069A (zh) * 2020-12-22 2021-04-09 长江存储科技有限责任公司 掩膜板和修正套刻精度的方法
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Also Published As

Publication number Publication date
TW200507065A (en) 2005-02-16
JP4979746B2 (ja) 2012-07-18
US20050031969A1 (en) 2005-02-10
CN1577080A (zh) 2005-02-09
KR100933732B1 (ko) 2009-12-24
KR100933731B1 (ko) 2009-12-24
US20090073406A1 (en) 2009-03-19
JP2010002916A (ja) 2010-01-07
JP2005031681A (ja) 2005-02-03
TWI243408B (en) 2005-11-11
KR20070104498A (ko) 2007-10-26
KR20050007177A (ko) 2005-01-17
CN102520594A (zh) 2012-06-27
CN1577080B (zh) 2012-03-28
US7466413B2 (en) 2008-12-16

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