SG10201804393TA - A semiconductor device including a multigate transistor formed with fin structure - Google Patents

A semiconductor device including a multigate transistor formed with fin structure

Info

Publication number
SG10201804393TA
SG10201804393TA SG10201804393TA SG10201804393TA SG10201804393TA SG 10201804393T A SG10201804393T A SG 10201804393TA SG 10201804393T A SG10201804393T A SG 10201804393TA SG 10201804393T A SG10201804393T A SG 10201804393TA SG 10201804393T A SG10201804393T A SG 10201804393TA
Authority
SG
Singapore
Prior art keywords
trench
semiconductor device
variation
fin
device including
Prior art date
Application number
SG10201804393TA
Other languages
English (en)
Inventor
Sung Min Kim
Dong Won Kim
Geum Jong Bae
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201804393TA publication Critical patent/SG10201804393TA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
SG10201804393TA 2017-05-24 2018-05-23 A semiconductor device including a multigate transistor formed with fin structure SG10201804393TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170063988A KR102221220B1 (ko) 2017-05-24 2017-05-24 반도체 장치

Publications (1)

Publication Number Publication Date
SG10201804393TA true SG10201804393TA (en) 2018-12-28

Family

ID=64400657

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804393TA SG10201804393TA (en) 2017-05-24 2018-05-23 A semiconductor device including a multigate transistor formed with fin structure

Country Status (5)

Country Link
US (3) US10229908B2 (zh)
KR (1) KR102221220B1 (zh)
CN (2) CN108962973B (zh)
SG (1) SG10201804393TA (zh)
TW (1) TWI755489B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102221220B1 (ko) * 2017-05-24 2021-03-03 삼성전자주식회사 반도체 장치
US10276720B2 (en) * 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor (FINFET) device structure
KR20200083981A (ko) * 2017-11-30 2020-07-09 인텔 코포레이션 진보된 집적 회로 구조체 제조를 위한 핀 패터닝
TWI750316B (zh) 2018-02-09 2021-12-21 聯華電子股份有限公司 1-1強制性鰭狀堆疊反向器及形成強制性鰭狀堆疊反向器的方法
KR102592872B1 (ko) * 2018-04-10 2023-10-20 삼성전자주식회사 반도체 장치

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100521377B1 (ko) 2003-02-21 2005-10-12 삼성전자주식회사 핀 전계효과 트랜지스터의 형성방법
US7285466B2 (en) 2003-08-05 2007-10-23 Samsung Electronics Co., Ltd. Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels
US7396781B2 (en) 2005-06-09 2008-07-08 Micron Technology, Inc. Method and apparatus for adjusting feature size and position
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US9257325B2 (en) * 2009-09-18 2016-02-09 GlobalFoundries, Inc. Semiconductor structures and methods for forming isolation between Fin structures of FinFET devices
US8610241B1 (en) 2012-06-12 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Homo-junction diode structures using fin field effect transistor processing
KR20140010815A (ko) * 2012-07-17 2014-01-27 에스케이하이닉스 주식회사 Ｍｏｓ 커패시터, 그 형성 방법 및 그를 이용한 반도체 장치
US9576978B2 (en) 2012-10-09 2017-02-21 Samsung Electronics Co., Ltd. Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same
US8501607B1 (en) 2012-11-07 2013-08-06 Globalfoundries Inc. FinFET alignment structures using a double trench flow
US8778794B1 (en) 2012-12-21 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnection wires of semiconductor devices
US8901607B2 (en) * 2013-01-14 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and fabricating the same
US8975094B2 (en) 2013-01-21 2015-03-10 Globalfoundries Inc. Test structure and method to facilitate development/optimization of process parameters
KR102013842B1 (ko) * 2013-02-08 2019-08-26 삼성전자주식회사 반도체 소자의 제조 방법
US8895446B2 (en) * 2013-02-18 2014-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Fin deformation modulation
US20140315371A1 (en) 2013-04-17 2014-10-23 International Business Machines Corporation Methods of forming isolation regions for bulk finfet semiconductor devices
US9171764B2 (en) 2013-12-13 2015-10-27 GlobalFoundries, Inc. Methods for fabricating integrated circuits using self-aligned quadruple patterning
US9190466B2 (en) * 2013-12-27 2015-11-17 International Business Machines Corporation Independent gate vertical FinFET structure
US9871037B2 (en) * 2014-02-26 2018-01-16 Taiwan Semiconductor Manufacturing Company Limited Structures and methods for fabricating semiconductor devices using fin structures
US9209038B2 (en) 2014-05-02 2015-12-08 GlobalFoundries, Inc. Methods for fabricating integrated circuits using self-aligned quadruple patterning
US9595475B2 (en) * 2014-12-01 2017-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-stage fin formation methods and structures thereof
KR102339781B1 (ko) 2014-12-19 2021-12-15 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR102269415B1 (ko) * 2015-03-16 2021-06-24 삼성전자주식회사 반도체 장치
KR102170701B1 (ko) 2015-04-15 2020-10-27 삼성전자주식회사 반도체 장치 제조 방법
KR102366976B1 (ko) * 2015-05-04 2022-02-24 삼성전자주식회사 콘택 플러그를 갖는 반도체 소자 및 그 형성 방법
KR102398862B1 (ko) * 2015-05-13 2022-05-16 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102415327B1 (ko) * 2015-06-01 2022-06-30 삼성전자주식회사 비활성-핀을 갖는 반도체 소자 및 그 형성 방법
KR102448597B1 (ko) * 2015-06-24 2022-09-27 삼성전자주식회사 반도체 장치
US9558956B2 (en) 2015-07-01 2017-01-31 Samsung Electronics Co., Ltd. Method for fabricating semiconductor device
KR102442309B1 (ko) 2015-07-09 2022-09-13 삼성전자주식회사 소자 분리 구조의 형성 방법
US9553194B1 (en) * 2015-07-29 2017-01-24 Globalfoundries Inc. Method for improved fin profile
KR102314778B1 (ko) * 2015-08-21 2021-10-21 삼성전자주식회사 반도체 소자
US9679978B2 (en) * 2015-09-24 2017-06-13 Samsung Electronics Co., Ltd. Semiconductor device and method for fabricating the same
KR102388364B1 (ko) * 2015-09-24 2022-04-18 삼성전자주식회사 반도체 장치
KR102476356B1 (ko) * 2015-10-07 2022-12-09 삼성전자주식회사 집적회로 소자 및 그 제조 방법
US9666474B2 (en) * 2015-10-30 2017-05-30 International Business Machines Corporation Uniform dielectric recess depth during fin reveal
KR102262830B1 (ko) * 2015-11-03 2021-06-08 삼성전자주식회사 반도체 장치
US10290634B2 (en) * 2016-01-20 2019-05-14 Globalfoundries Inc. Multiple threshold voltages using fin pitch and profile
US9735156B1 (en) * 2016-01-26 2017-08-15 Samsung Electronics Co., Ltd. Semiconductor device and a fabricating method thereof
TWI627665B (zh) * 2016-04-06 2018-06-21 瑞昱半導體股份有限公司 鰭式場效電晶體及其製造方法
US10217741B2 (en) * 2016-08-03 2019-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure and method of forming same through two-step etching processes
US9947660B1 (en) * 2017-04-18 2018-04-17 International Business Machines Corporation Two dimension material fin sidewall
KR102221220B1 (ko) * 2017-05-24 2021-03-03 삼성전자주식회사 반도체 장치

Also Published As

Publication number Publication date
US20190157268A1 (en) 2019-05-23
US10229908B2 (en) 2019-03-12
TWI755489B (zh) 2022-02-21
TW201907542A (zh) 2019-02-16
US10923472B2 (en) 2021-02-16
US10453839B2 (en) 2019-10-22
CN108962973A (zh) 2018-12-07
CN111799255A (zh) 2020-10-20
KR20180128635A (ko) 2018-12-04
US20200013777A1 (en) 2020-01-09
CN108962973B (zh) 2020-07-17
KR102221220B1 (ko) 2021-03-03
US20180342508A1 (en) 2018-11-29

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