SG10201505824YA - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- SG10201505824YA SG10201505824YA SG10201505824YA SG10201505824YA SG10201505824YA SG 10201505824Y A SG10201505824Y A SG 10201505824YA SG 10201505824Y A SG10201505824Y A SG 10201505824YA SG 10201505824Y A SG10201505824Y A SG 10201505824YA SG 10201505824Y A SG10201505824Y A SG 10201505824YA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/1066—Gate region of field-effect devices with PN junction gate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014153463A JP6055799B2 (ja) | 2014-07-29 | 2014-07-29 | 半導体装置とその製造方法 |
Publications (1)
Publication Number | Publication Date |
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SG10201505824YA true SG10201505824YA (en) | 2016-02-26 |
Family
ID=55079737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SG10201505824YA SG10201505824YA (en) | 2014-07-29 | 2015-07-27 | Semiconductor device and method of manufacturing the same |
Country Status (10)
Country | Link |
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US (1) | US9536873B2 (es) |
JP (1) | JP6055799B2 (es) |
KR (1) | KR101720422B1 (es) |
CN (1) | CN105322008B (es) |
BR (1) | BR102015018072A2 (es) |
DE (1) | DE102015112350A1 (es) |
MX (1) | MX345827B (es) |
MY (1) | MY182669A (es) |
SG (1) | SG10201505824YA (es) |
TW (1) | TWI550853B (es) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102182016B1 (ko) * | 2013-12-02 | 2020-11-23 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 회로 |
WO2016143265A1 (ja) * | 2015-03-11 | 2016-09-15 | パナソニック株式会社 | 窒化物半導体装置 |
US10756084B2 (en) * | 2015-03-26 | 2020-08-25 | Wen-Jang Jiang | Group-III nitride semiconductor device and method for fabricating the same |
JP6299658B2 (ja) * | 2015-04-22 | 2018-03-28 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子 |
JP6263498B2 (ja) | 2015-05-21 | 2018-01-17 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
US10651317B2 (en) * | 2016-04-15 | 2020-05-12 | Macom Technology Solutions Holdings, Inc. | High-voltage lateral GaN-on-silicon Schottky diode |
CN107768248A (zh) * | 2016-08-19 | 2018-03-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN基增强型HEMT器件的制备方法 |
JP2018085456A (ja) | 2016-11-24 | 2018-05-31 | 日機装株式会社 | 半導体発光素子の製造方法 |
TWI623967B (zh) * | 2017-08-25 | 2018-05-11 | 世界先進積體電路股份有限公司 | 半導體裝置及其製造方法 |
US10032938B1 (en) | 2017-10-03 | 2018-07-24 | Vanguard International Semiconductor Corporation | Semiconductor devices and methods for manufacturing the same |
SE542709C2 (en) * | 2018-05-22 | 2020-06-30 | Ascatron Ab | Buried grid with shield in a wide band gap material |
TWI791888B (zh) * | 2018-09-11 | 2023-02-11 | 美商美國亞德諾半導體公司 | 增強模式化合物半導體場效電晶體、半導體裝置、以及製造增強模式半導體裝置之方法 |
WO2021217651A1 (en) * | 2020-04-30 | 2021-11-04 | Innoscience (suzhou) Semiconductor Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN112119505B (zh) * | 2020-08-13 | 2023-03-17 | 英诺赛科(珠海)科技有限公司 | 半导体装置结构及其制造方法 |
EP4310918A1 (en) | 2022-07-21 | 2024-01-24 | Infineon Technologies Austria AG | Semiconductor device and method of fabricating a semiconductor device |
CN117837293A (zh) * | 2022-08-26 | 2024-04-05 | 英诺赛科(苏州)半导体有限公司 | 半导体装置结构和制造半导体装置结构的方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000164926A (ja) * | 1998-11-24 | 2000-06-16 | Sony Corp | 化合物半導体の選択エッチング方法、窒化物系化合物半導体の選択エッチング方法、半導体装置および半導体装置の製造方法 |
JP5183913B2 (ja) | 2006-11-24 | 2013-04-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
US8076699B2 (en) | 2008-04-02 | 2011-12-13 | The Hong Kong Univ. Of Science And Technology | Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems |
US8384129B2 (en) * | 2009-06-25 | 2013-02-26 | The United States Of America, As Represented By The Secretary Of The Navy | Transistor with enhanced channel charge inducing material layer and threshold voltage control |
JP5299208B2 (ja) * | 2009-10-09 | 2013-09-25 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP5056883B2 (ja) | 2010-03-26 | 2012-10-24 | サンケン電気株式会社 | 半導体装置 |
JP2012060066A (ja) | 2010-09-13 | 2012-03-22 | Toyota Motor Corp | AlGaN酸化膜を有する半導体装置、及び、その製造方法 |
JP5776217B2 (ja) * | 2011-02-24 | 2015-09-09 | 富士通株式会社 | 化合物半導体装置 |
WO2013011617A1 (ja) | 2011-07-15 | 2013-01-24 | パナソニック株式会社 | 半導体装置及びその製造方法 |
KR101882997B1 (ko) * | 2011-09-30 | 2018-07-30 | 삼성전기주식회사 | 질화물 반도체 소자 및 그 제조방법 |
JP5659182B2 (ja) * | 2012-03-23 | 2015-01-28 | 株式会社東芝 | 窒化物半導体素子 |
JP2013232578A (ja) | 2012-05-01 | 2013-11-14 | Advanced Power Device Research Association | ショットキーバリアダイオード |
JP2014027187A (ja) * | 2012-07-27 | 2014-02-06 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
KR101922117B1 (ko) | 2012-08-16 | 2018-11-26 | 삼성전자주식회사 | 트랜지스터를 포함하는 전자소자 및 그 동작방법 |
JP5794241B2 (ja) | 2013-02-06 | 2015-10-14 | 信越化学工業株式会社 | マイクロ構造体用樹脂構造体の製造方法及びマイクロ構造体の製造方法 |
EP2793255B8 (en) * | 2013-04-16 | 2018-01-17 | IMEC vzw | Manufacturing method of a semiconductor device comprising a schottky diode and a high electron mobility transistor |
-
2014
- 2014-07-29 JP JP2014153463A patent/JP6055799B2/ja active Active
-
2015
- 2015-07-16 MX MX2015009178A patent/MX345827B/es active IP Right Grant
- 2015-07-23 KR KR1020150104203A patent/KR101720422B1/ko active IP Right Grant
- 2015-07-23 US US14/806,749 patent/US9536873B2/en active Active
- 2015-07-24 MY MYPI2015702417A patent/MY182669A/en unknown
- 2015-07-27 SG SG10201505824YA patent/SG10201505824YA/en unknown
- 2015-07-27 CN CN201510446730.9A patent/CN105322008B/zh active Active
- 2015-07-28 TW TW104124385A patent/TWI550853B/zh active
- 2015-07-29 BR BR102015018072A patent/BR102015018072A2/pt not_active Application Discontinuation
- 2015-07-29 DE DE102015112350.9A patent/DE102015112350A1/de not_active Ceased
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KR20160014533A (ko) | 2016-02-11 |
TWI550853B (zh) | 2016-09-21 |
JP6055799B2 (ja) | 2016-12-27 |
MX2015009178A (es) | 2016-04-28 |
KR101720422B1 (ko) | 2017-03-27 |
CN105322008B (zh) | 2018-06-15 |
MX345827B (es) | 2017-02-17 |
MY182669A (en) | 2021-01-28 |
JP2016032011A (ja) | 2016-03-07 |
CN105322008A (zh) | 2016-02-10 |
US9536873B2 (en) | 2017-01-03 |
DE102015112350A1 (de) | 2016-02-04 |
US20160035719A1 (en) | 2016-02-04 |
BR102015018072A2 (pt) | 2016-02-02 |
TW201613091A (en) | 2016-04-01 |
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