SG10201405908UA - Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates - Google Patents

Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates

Info

Publication number
SG10201405908UA
SG10201405908UA SG10201405908UA SG10201405908UA SG10201405908UA SG 10201405908U A SG10201405908U A SG 10201405908UA SG 10201405908U A SG10201405908U A SG 10201405908UA SG 10201405908U A SG10201405908U A SG 10201405908UA SG 10201405908U A SG10201405908U A SG 10201405908UA
Authority
SG
Singapore
Prior art keywords
texturing
single crystal
etching solution
silicon substrates
aqueous acidic
Prior art date
Application number
SG10201405908UA
Other languages
English (en)
Inventor
Simon Braun
Julian Prölss
Ihor Melnyk
Michael Michel
Stefan Mathijssen
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG10201405908UA publication Critical patent/SG10201405908UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
SG10201405908UA 2009-09-21 2010-09-09 Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates SG10201405908UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24409009P 2009-09-21 2009-09-21

Publications (1)

Publication Number Publication Date
SG10201405908UA true SG10201405908UA (en) 2014-11-27

Family

ID=43064675

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201405908UA SG10201405908UA (en) 2009-09-21 2010-09-09 Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates
SG2012011235A SG178834A1 (en) 2009-09-21 2010-09-09 Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012011235A SG178834A1 (en) 2009-09-21 2010-09-09 Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates

Country Status (9)

Country Link
US (1) US8969276B2 (fr)
EP (1) EP2480627A1 (fr)
JP (1) JP5813643B2 (fr)
KR (1) KR20120135185A (fr)
CN (1) CN102656250B (fr)
MY (1) MY158452A (fr)
SG (2) SG10201405908UA (fr)
TW (1) TWI494416B (fr)
WO (1) WO2011032880A1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008056086A1 (de) * 2008-11-06 2010-05-12 Gp Solar Gmbh Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen sowie Verfahren zu dessen Herstellung
SG186108A1 (en) 2010-06-09 2013-01-30 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
EP2514799A1 (fr) * 2011-04-21 2012-10-24 Rohm and Haas Electronic Materials LLC Composition de texturation polycristalline améliorée et procédé
KR20140138581A (ko) * 2011-08-22 2014-12-04 1366 테크놀로지 인코포레이티드 실리콘 웨이퍼들의 산성 습식 화학 에칭을 위한 제형
JP5717309B2 (ja) * 2012-05-31 2015-05-13 日本化成株式会社 太陽電池用シリコンウエハー及びその製造方法
US20130344641A1 (en) * 2012-06-26 2013-12-26 Corning Incorporated. Mechanical and chemical texturization of a silicon sheet for photovoltaic light trapping
DE102012214428A1 (de) 2012-08-14 2014-02-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur sauren Texturierung von siliziumhaltigen Substraten
CN102800380A (zh) * 2012-08-21 2012-11-28 海南汉能光伏有限公司 浆料及其制备方法、太阳能电池边缘膜层的去除方法
CN103087718B (zh) * 2013-01-16 2014-12-31 四川大学 湿法刻蚀镍酸镧薄膜和铁电薄膜/镍酸镧复合薄膜的腐蚀液及其制备方法
JP5868437B2 (ja) * 2013-04-26 2016-02-24 株式会社Tkx 太陽電池用シリコンウエハーの製造方法
CN104701407B (zh) * 2013-12-05 2017-09-01 骆志炯 太阳能电池的表面制绒处理方法
US10622495B2 (en) * 2014-03-18 2020-04-14 Specmat, Inc. Method, process and fabrication technology for oxide layers
CN105576074A (zh) * 2014-10-08 2016-05-11 上海神舟新能源发展有限公司 一种n型双面电池的湿法刻蚀方法
CN104835867A (zh) * 2015-03-23 2015-08-12 中建材浚鑫科技股份有限公司 一种新型的硅片清洗工序单面酸腐蚀制绒的方法
TWI538986B (zh) * 2015-07-15 2016-06-21 綠能科技股份有限公司 蝕刻液以及矽基板的表面粗糙化的方法
EP3480125B1 (fr) * 2016-06-30 2022-01-19 Kuraray Co., Ltd. Réceptacle pour carburant
CN105977345A (zh) * 2016-07-08 2016-09-28 合肥中南光电有限公司 一种稀土-衣康酸单晶硅太阳能电池片表面织构液及其制备方法
CN105957907A (zh) * 2016-07-08 2016-09-21 合肥中南光电有限公司 一种高均匀性含丹皮酚的单晶硅太阳能电池片表面织构液及其制备方法
CN105977344A (zh) * 2016-07-08 2016-09-28 合肥中南光电有限公司 一种低反射率含沸石粉的单晶硅太阳能电池片表面织构液及其制备方法
CN106129140A (zh) * 2016-07-08 2016-11-16 合肥中南光电有限公司 一种环保高效含微孔淀粉的单晶硅太阳能电池片表面织构液及其制备方法
CN105977343A (zh) * 2016-07-08 2016-09-28 合肥中南光电有限公司 一种高稳定性含栲胶的单晶硅太阳能电池片表面织构液及其制备方法
CN112851131A (zh) * 2019-11-26 2021-05-28 惠州市清洋实业有限公司 一种用于处理摄像头镜片cd纹蚀刻液及其使用方法
CN112280558B (zh) * 2020-10-29 2021-12-28 湖北兴福电子材料有限公司 一种硅片打毛液

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1206756A (en) * 1967-01-27 1970-09-30 Atomic Energy Authority Uk Improvements in pickling bath compositions
US4220706A (en) * 1978-05-10 1980-09-02 Rca Corporation Etchant solution containing HF-HnO3 -H2 SO4 -H2 O2
JPS5747744A (en) * 1980-08-30 1982-03-18 Toyo Glass Kk Etching method for glass
JPS63172799A (ja) * 1987-01-12 1988-07-16 日本パ−カライジング株式会社 アルミニウムの表面洗浄剤
DE3728693A1 (de) * 1987-08-27 1989-03-09 Wacker Chemitronic Verfahren und vorrichtung zum aetzen von halbleiteroberflaechen
US5330558A (en) * 1993-03-31 1994-07-19 Henkel Corporation Method for removing chromium containing coatings from aluminum substrates
US5705082A (en) * 1995-01-26 1998-01-06 Chromalloy Gas Turbine Corporation Roughening of metal surfaces
FR2741194B1 (fr) 1995-11-13 1998-01-30 Photowatt Int Cellule solaire comportant du silicium multicristallin et procede de texturisation de la surface du silicium multicristallin de type p
JP3772456B2 (ja) 1997-04-23 2006-05-10 三菱電機株式会社 太陽電池及びその製造方法、半導体製造装置
EP0915523A3 (fr) * 1997-10-29 2005-11-02 Canon Kabushiki Kaisha Elément photovoltaique comportant une couche arrière transparente et conductrice de courant avec une région superficielle ayant une section transversale déterminée et un module comprenant cet élément photovoltaique
EP0997323B1 (fr) 1998-10-30 2006-03-22 Sumitomo Rubber Industries Ltd. Bandage pneumatique pour véhicule
US6553788B1 (en) * 1999-02-23 2003-04-29 Nippon Sheet Glass Co., Ltd. Glass substrate for magnetic disk and method for manufacturing
US6440224B1 (en) * 1999-03-15 2002-08-27 Ecolab Inc. Hydrofluoric acid generating composition and method of treating surfaces
JP2001023947A (ja) * 1999-07-05 2001-01-26 Canon Inc 半導体基板のエッチング方法、半導体薄膜の製造方法および半導体基板保持装置
JP2001093876A (ja) * 1999-09-24 2001-04-06 Nisso Engineering Co Ltd 半導体ウエハのエッチング方法
DE19962136A1 (de) * 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
US20030230548A1 (en) * 2002-06-18 2003-12-18 Wolfgang Sievert Acid etching mixture having reduced water content
JP3916526B2 (ja) 2002-07-29 2007-05-16 株式会社新菱 シリコン基板のエッチング方法
DE20321702U1 (de) 2003-05-07 2008-12-24 Universität Konstanz Vorrichtung zum Texturieren von Oberflächen von Silizium-Scheiben
WO2005036629A1 (fr) * 2003-10-10 2005-04-21 Mimasu Semiconductor Industry Co., Ltd. Procede de rugosification de la surface d'une plaquette
JP4623624B2 (ja) * 2003-11-11 2011-02-02 アプリシアテクノロジー株式会社 シリコンウエハ基板表面の粗面化処理方法
JP2005311060A (ja) 2004-04-21 2005-11-04 Sharp Corp 太陽電池の製造方法、太陽電池
JP2006120819A (ja) * 2004-10-21 2006-05-11 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法及び半導体ウェーハ
JP2008523585A (ja) * 2004-12-06 2008-07-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ エッチング溶液及びその添加剤
JP2006294752A (ja) * 2005-04-07 2006-10-26 Sharp Corp 基板表面処理用の基板のキャリアホルダー
TWI267897B (en) * 2005-11-10 2006-12-01 Tatung Co Substrate with anti-reflection layer and its manufacturing method
CN100561678C (zh) * 2006-07-10 2009-11-18 中芯国际集成电路制造(上海)有限公司 硅片表面的处理方法
KR100860367B1 (ko) * 2006-08-21 2008-09-25 제일모직주식회사 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액
KR101317473B1 (ko) * 2006-08-23 2013-10-18 간또 가가꾸 가부시끼가이샤 티탄 및 알루미늄 금속 적층막용 에칭액 조성물
DE102007004060B4 (de) * 2007-01-22 2013-03-21 Gp Solar Gmbh Verwendung einer Ätzlösung aufweisend Wasser, Salpetersäure und Schwefelsäure und Ätzverfahren
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
EP2011779A1 (fr) * 2007-07-06 2009-01-07 Vita Zahnfabrik H. Rauter GmbH & Co. KG Corps en céramique et son procédé de fabrication
JP4974986B2 (ja) * 2007-09-28 2012-07-11 富士フイルム株式会社 太陽電池用基板および太陽電池
JP2009267336A (ja) * 2007-09-28 2009-11-12 Fujifilm Corp 太陽電池用基板および太陽電池
US8119438B2 (en) * 2007-10-24 2012-02-21 Mitsubishi Electric Corporation Method of manufacturing solar cell
TWI358467B (en) * 2007-12-07 2012-02-21 Nanya Technology Corp Etchant for metal alloy having hafnium and molybde
DE102007063202A1 (de) * 2007-12-19 2009-06-25 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern
TW201002623A (en) 2008-05-30 2010-01-16 Basf Se Process for preparing lithium vanadium oxides and their use as cathode material

Also Published As

Publication number Publication date
TW201129680A (en) 2011-09-01
KR20120135185A (ko) 2012-12-12
EP2480627A1 (fr) 2012-08-01
CN102656250A (zh) 2012-09-05
SG178834A1 (en) 2012-04-27
JP2013505562A (ja) 2013-02-14
TWI494416B (zh) 2015-08-01
MY158452A (en) 2016-10-14
US8969276B2 (en) 2015-03-03
US20120160320A1 (en) 2012-06-28
JP5813643B2 (ja) 2015-11-17
CN102656250B (zh) 2015-02-25
WO2011032880A1 (fr) 2011-03-24

Similar Documents

Publication Publication Date Title
SG10201405908UA (en) Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates
EP2611881A4 (fr) Solution acide aqueuse et solution de gravure, et procédé de texturation superficielle de substrats en silicium monocristallin et polycristallin
EP2580303A4 (fr) Composition aqueuse alcaline de gravure et de nettoyage et procédé pour le traitement de la surface de substrats en silicium
SG10201605697UA (en) Aqueous alkaline compositions and method for treating the surface of silicon substrates
EP2471981A4 (fr) Tranche de monocristal de sic et son procédé de fabrication
EP2394787A4 (fr) Substrat de monocristaux de carbure de silicium et son procédé de fabrication
EP2395133A4 (fr) Substrat monocristallin de carbure de silicium épitaxial et son procédé de fabrication
IL219703A0 (en) Slurry for chemical mechanical polishing and polishing method for substrate using same
EP2752508A4 (fr) Tranche de monocristal en carbure de silicium et son procédé de fabrication
EP2513334A4 (fr) Agents substrat de dicer et procédés d'inhibition spécifique de l'expression génique
EP2412849A4 (fr) Plaquette de silicium et procédé de fabrication de cette dernière
HK1153842A1 (zh) 玻璃襯底及其退火方法
IL219322A0 (en) Method and device for treating a substrate surface of a substrate
EP2573801A4 (fr) Solution de gravure et procédé destiné à traiter la surface d'un substrat de silicium
TWI370488B (en) Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal
GB2474187B (en) Silicon etchant and etching method
EP2767524A4 (fr) Substrat de nitrure de silicium et procédé de fabrication d'un substrat de nitrure de silicium
EP2244280A4 (fr) Procédé de traitement de la surface d'un substrat soi
EP2251460A4 (fr) Creuset en quartz pour tirage d'un monocristal de silicium et procédé de fabrication du creuset en quartz
EP2796596A4 (fr) Substrat monocristal de nitrure d'aluminium et son procédé de production
EP2921574A4 (fr) MÉTHODE DE TRAITEMENT DE SURFACE POUR UN SUBSTRAT DE SiC MONOCRISTALLIN, ET SUBSTRATS DE SiC MONOCRISTALLIN
EP2437283A4 (fr) Agent de gravure liquide et procédé de formation d'une structure d'isolation de tranchée à l'aide de celui-ci
TWI563556B (en) Apparatus of etching glass substrate
EP2460178A4 (fr) Traitement de surface de silicium
EP2486173A4 (fr) Creuset en quartz et son procédé de fabrication