SG10201400390YA - Package structure - Google Patents

Package structure

Info

Publication number
SG10201400390YA
SG10201400390YA SG10201400390YA SG10201400390YA SG10201400390YA SG 10201400390Y A SG10201400390Y A SG 10201400390YA SG 10201400390Y A SG10201400390Y A SG 10201400390YA SG 10201400390Y A SG10201400390Y A SG 10201400390YA SG 10201400390Y A SG10201400390Y A SG 10201400390YA
Authority
SG
Singapore
Prior art keywords
package structure
package
Prior art date
Application number
SG10201400390YA
Other languages
English (en)
Inventor
Chen Da-Jung
Original Assignee
Delta Electronics Int L Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delta Electronics Int L Singapore Pte Ltd filed Critical Delta Electronics Int L Singapore Pte Ltd
Priority to SG10201400390YA priority Critical patent/SG10201400390YA/en
Priority to US14/230,865 priority patent/US9425131B2/en
Priority to CN201410127108.7A priority patent/CN104900609B/zh
Publication of SG10201400390YA publication Critical patent/SG10201400390YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/24195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
    • H01L2224/251—Disposition
    • H01L2224/2518—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Structure Of Printed Boards (AREA)
SG10201400390YA 2014-03-05 2014-03-05 Package structure SG10201400390YA (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG10201400390YA SG10201400390YA (en) 2014-03-05 2014-03-05 Package structure
US14/230,865 US9425131B2 (en) 2014-03-05 2014-03-31 Package structure
CN201410127108.7A CN104900609B (zh) 2014-03-05 2014-03-31 封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG10201400390YA SG10201400390YA (en) 2014-03-05 2014-03-05 Package structure

Publications (1)

Publication Number Publication Date
SG10201400390YA true SG10201400390YA (en) 2015-10-29

Family

ID=54018105

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201400390YA SG10201400390YA (en) 2014-03-05 2014-03-05 Package structure

Country Status (3)

Country Link
US (1) US9425131B2 (zh)
CN (1) CN104900609B (zh)
SG (1) SG10201400390YA (zh)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104716128B (zh) 2013-12-16 2019-11-22 台达电子企业管理（上海）有限公司 功率模块、电源变换器以及功率模块的制造方法
US20150351218A1 (en) * 2014-05-27 2015-12-03 Fujikura Ltd. Component built-in board and method of manufacturing the same, and mounting body
US9826646B2 (en) * 2014-05-27 2017-11-21 Fujikura Ltd. Component built-in board and method of manufacturing the same, and mounting body
SG10201504271YA (en) * 2015-05-29 2016-12-29 Delta Electronics Int’L Singapore Pte Ltd Power module
TWI584420B (zh) * 2015-09-16 2017-05-21 旭德科技股份有限公司 封裝載板及其製作方法
EP3148300B1 (en) * 2015-09-24 2023-07-26 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Connection system for electronic components
SG10201508520PA (en) * 2015-10-14 2017-05-30 Delta Electronics Int’L Singapore Pte Ltd Power module
US10912186B2 (en) * 2015-12-03 2021-02-02 Mitsubishi Electric Corporation Semiconductor device
KR102059610B1 (ko) * 2015-12-18 2019-12-26 주식회사 엘지화학 고전도성 방열 패드를 이용한 인쇄회로기판의 방열 시스템
KR102565119B1 (ko) * 2016-08-25 2023-08-08 삼성전기주식회사 전자 소자 내장 기판과 그 제조 방법 및 전자 소자 모듈
FR3060845B1 (fr) * 2016-12-19 2019-05-24 Institut Vedecom Circuits electroniques de puissance equipes de bus barres formant dissipateurs thermiques et procede d’integration
CN108346637B (zh) * 2017-01-24 2019-10-08 比亚迪股份有限公司 一种功率模块及其制造方法
CN108346645A (zh) * 2017-01-24 2018-07-31 比亚迪股份有限公司 一种功率模块及其制造方法
CN108346628B (zh) * 2017-01-24 2021-06-18 比亚迪半导体股份有限公司 一种功率模块及其制造方法
CN108346649B (zh) * 2017-01-24 2021-03-02 比亚迪半导体股份有限公司 一种半桥功率模块及其制造方法
EP3355349B1 (en) * 2017-01-26 2022-05-11 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Efficient heat removal from component carrier with embedded diode
US10242973B2 (en) * 2017-07-07 2019-03-26 Samsung Electro-Mechanics Co., Ltd. Fan-out-semiconductor package module
CN109727941A (zh) * 2017-10-31 2019-05-07 比亚迪股份有限公司 一种封装模组及其制备方法、电池保护模组
DE102017220417A1 (de) * 2017-11-16 2019-05-16 Continental Automotive Gmbh Elektronisches Modul
EP3534394A1 (en) 2018-02-28 2019-09-04 Infineon Technologies Austria AG Semiconductor package and method of manufacturing a semiconductor package
TWI690031B (zh) * 2018-03-13 2020-04-01 鈺橋半導體股份有限公司 整合元件及導線架之線路板及其製法
SG10201802515PA (en) * 2018-03-27 2019-10-30 Delta Electronics Int’L Singapore Pte Ltd Packaging process
EP3547359A1 (en) 2018-03-30 2019-10-02 Mitsubishi Electric R&D Centre Europe B.V. Improved pre-packed power cell
IT201800004209A1 (it) * 2018-04-05 2019-10-05 Dispositivo semiconduttore di potenza con relativo incapsulamento e corrispondente procedimento di fabbricazione
EP3584833B1 (en) 2018-06-19 2021-09-01 Mitsubishi Electric R&D Centre Europe B.V. Power module with improved alignment
SG10201805356XA (en) * 2018-06-21 2020-01-30 Delta Electronics Int’L Singapore Pte Ltd Package structure
US11183460B2 (en) * 2018-09-17 2021-11-23 Texas Instruments Incorporated Embedded die packaging with integrated ceramic substrate
EP3648159B1 (en) 2018-10-31 2021-12-15 Infineon Technologies Austria AG Semiconductor package and method of fabricating a semiconductor package
SG10201809987YA (en) * 2018-11-09 2020-06-29 Delta Electronics Int’L Singapore Pte Ltd Package structure and packaging process
SG10201810052WA (en) * 2018-11-12 2020-06-29 Delta Electronics Int’L Singapore Pte Ltd Packaging process and packaging structure
US20200161206A1 (en) * 2018-11-20 2020-05-21 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and semiconductor manufacturing process
SG10201810791TA (en) * 2018-11-30 2020-06-29 Delta Electronics Int’L Singapore Pte Ltd Package structure and power module using same
SG10201811582WA (en) * 2018-12-24 2020-07-29 Delta Electronics Int’L Singapore Pte Ltd Package structure and manufacturing method thereof
IT201900013743A1 (it) 2019-08-01 2021-02-01 St Microelectronics Srl Dispositivo elettronico di potenza incapsulato, in particolare circuito a ponte comprendente transistori di potenza, e relativo procedimento di assemblaggio
CN110838480B (zh) * 2019-11-09 2021-04-16 北京工业大学 一种碳化硅mosfet模块的封装结构和制作方法
EP3836208A1 (en) * 2019-11-19 2021-06-16 Mitsubishi Electric R & D Centre Europe B.V. Method and system for interconnecting a power device embedded in a substrate using conducting paste into cavities
EP3852132A1 (en) 2020-01-20 2021-07-21 Infineon Technologies Austria AG Additive manufacturing of a frontside or backside interconnect of a semiconductor die
US11532541B2 (en) * 2020-01-28 2022-12-20 Infineon Technologies Ag Semiconductor package having a solderable contact pad formed by a load terminal bond pad of a power semiconductor die
US11502012B2 (en) 2020-01-28 2022-11-15 Infineon Technologies Ag Semiconductor packages and methods of manufacturing thereof
EP3869923A1 (en) * 2020-02-20 2021-08-25 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Cooling profile integration for embedded power systems
CN113496958B (zh) * 2020-03-20 2024-05-10 无锡华润微电子有限公司 基板及封装结构
US11990384B2 (en) * 2020-04-17 2024-05-21 Nxp Usa, Inc. Amplifier modules with power transistor die and peripheral ground connections
US11990872B2 (en) 2020-04-17 2024-05-21 Nxp Usa, Inc. Power amplifier modules including topside cooling interfaces and methods for the fabrication thereof
IT202000016840A1 (it) 2020-07-10 2022-01-10 St Microelectronics Srl Dispositivo mosfet incapsulato ad alta tensione e dotato di clip di connessione e relativo procedimento di fabbricazione
DE102021101010A1 (de) * 2021-01-19 2022-07-21 Infineon Technologies Ag Vorgehäuster chip, verfahren zum herstellen eines vorgehäusten chips, halbleitergehäuse und verfahren zum herstellen eines halbleitergehäuses
US11770902B2 (en) 2021-01-27 2023-09-26 Wuxi Shennan Circuits Co., Ltd. Circuit board, preparation method thereof, and electronic device
CN114828398A (zh) * 2021-01-27 2022-07-29 无锡深南电路有限公司 一种电路板及其制造方法
US20220310475A1 (en) * 2021-03-24 2022-09-29 Navitas Semiconductor Limited Electronic packages with integral heat spreaders
US20230142729A1 (en) * 2021-11-08 2023-05-11 Analog Devices, Inc. Integrated device package with an integrated heat sink
JP2023079124A (ja) * 2021-11-26 2023-06-07 国立大学法人東北大学 パワー半導体素子及びパワー半導体モジュール
EP4216268A1 (en) * 2022-01-21 2023-07-26 Infineon Technologies Austria AG Chip-substrate composite semiconductor device
EP4216271A1 (en) * 2022-01-21 2023-07-26 Infineon Technologies Austria AG Semiconductor package including a chip-substrate composite semiconductor device
CN114664758A (zh) * 2022-03-20 2022-06-24 上海沛塬电子有限公司 一种高频大功率封装模组及其制作方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW449844B (en) * 1997-05-17 2001-08-11 Hyundai Electronics Ind Ball grid array package having an integrated circuit chip
JP2001024312A (ja) 1999-07-13 2001-01-26 Taiyo Yuden Co Ltd 電子装置の製造方法及び電子装置並びに樹脂充填方法
FI119215B (fi) 2002-01-31 2008-08-29 Imbera Electronics Oy Menetelmä komponentin upottamiseksi alustaan ja elektroniikkamoduuli
JP2004056082A (ja) * 2002-05-31 2004-02-19 Ngk Spark Plug Co Ltd 配線基板およびその製造方法
US7268425B2 (en) * 2003-03-05 2007-09-11 Intel Corporation Thermally enhanced electronic flip-chip packaging with external-connector-side die and method
WO2005001943A1 (en) * 2003-06-30 2005-01-06 Koninklijke Philips Electronics N.V. Light-emitting diode thermal management system
KR100543729B1 (ko) 2004-03-24 2006-01-20 아바고테크놀로지스코리아 주식회사 열 방출 효율이 높고 두께는 물론 크기를 감소시킨 고주파모듈 패키지 및 그 조립 방법
JP4339739B2 (ja) * 2004-04-26 2009-10-07 太陽誘電株式会社 部品内蔵型多層基板
JP4800606B2 (ja) 2004-11-19 2011-10-26 Ｏｋｉセミコンダクタ株式会社 素子内蔵基板の製造方法
JP4535002B2 (ja) 2005-09-28 2010-09-01 Ｔｄｋ株式会社 半導体ｉｃ内蔵基板及びその製造方法
US7572681B1 (en) 2005-12-08 2009-08-11 Amkor Technology, Inc. Embedded electronic component package
KR100802393B1 (ko) * 2007-02-15 2008-02-13 삼성전기주식회사 패키지 기판 및 그 제조방법
CN101663926B (zh) 2007-05-02 2011-10-05 株式会社村田制作所 部件内置模块及其制造方法
KR101463075B1 (ko) * 2008-02-04 2014-11-20 페어차일드코리아반도체 주식회사 히트 싱크 패키지
KR100972431B1 (ko) * 2008-03-25 2010-07-26 삼성전기주식회사 임베디드 인쇄회로기판 및 그 제조방법
CN201448798U (zh) * 2009-04-24 2010-05-05 东莞市星火机电设备工程有限公司 Led灯散热装置
US8810008B2 (en) * 2010-03-18 2014-08-19 Nec Corporation Semiconductor element-embedded substrate, and method of manufacturing the substrate
US9142426B2 (en) 2011-06-20 2015-09-22 Cyntec Co., Ltd. Stack frame for electrical connections and the method to fabricate thereof
KR20130014122A (ko) 2011-07-29 2013-02-07 삼성전기주식회사 전자 소자 내장 인쇄회로기판 및 그 제조방법
US8614502B2 (en) * 2011-08-03 2013-12-24 Bridge Semiconductor Corporation Three dimensional semiconductor assembly board with bump/flange supporting board, coreless build-up circuitry and built-in electronic device
US10636735B2 (en) 2011-10-14 2020-04-28 Cyntec Co., Ltd. Package structure and the method to fabricate thereof
JP6189015B2 (ja) * 2012-04-19 2017-08-30 昭和電工株式会社 放熱装置および放熱装置の製造方法
SG10201400396WA (en) * 2014-03-05 2015-10-29 Delta Electronics Int’L Singapore Pte Ltd Package structure and stacked package module with the same

Also Published As

Publication number Publication date
US20150255380A1 (en) 2015-09-10
CN104900609B (zh) 2018-07-20
CN104900609A (zh) 2015-09-09
US9425131B2 (en) 2016-08-23

Similar Documents

Publication Publication Date Title
GB2537811B (en) Package
SG10201400390YA (en) Package structure
SG10201401622RA (en) Package structure
ZA201608596B (en) Packaging
AU361269S (en) Package
SG10201501021PA (en) Package structure
SG11201706792PA (en) Package
GB201515808D0 (en) Packaging
GB201517792D0 (en) Package
SG11201706791RA (en) Package
GB201401145D0 (en) Packaging
EP3689775C0 (en) PACKAGING
GB201515771D0 (en) Packaging
GB2538267B (en) Package
GB201515773D0 (en) Packaging
AU364522S (en) Package
GB2529208B (en) Package assembly
ZA201701340B (en) Packaging
GB201515772D0 (en) Packaging
SG11201705193VA (en) Package
GB2532549B (en) Packaging
TWI561440B (en) Package
GB2541429B (en) Package
GB201515805D0 (en) Packaging
GB2533075B (en) Package