CN110838480B - 一种碳化硅mosfet模块的封装结构和制作方法 - Google Patents

一种碳化硅mosfet模块的封装结构和制作方法 Download PDF

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CN110838480B
CN110838480B CN201911090620.8A CN201911090620A CN110838480B CN 110838480 B CN110838480 B CN 110838480B CN 201911090620 A CN201911090620 A CN 201911090620A CN 110838480 B CN110838480 B CN 110838480B
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silicon carbide
carbide mosfet
dbc substrate
adapter plate
module
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CN110838480A (zh
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秦飞
赵帅
代岩伟
陈沛
安彤
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Beijing University of Technology
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Beijing University of Technology
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Priority to PCT/CN2019/124448 priority patent/WO2021088197A1/zh
Publication of CN110838480A publication Critical patent/CN110838480A/zh
Priority to US17/219,788 priority patent/US11251106B2/en
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Abstract

本发明公开了一种碳化硅MOSFET模块的封装结构和制作方法，由碳化硅MOSFET芯片，上DBC基板，下DBC基板，陶瓷转接板，氧化硅介电填充层，纳米银焊膏，再布线层，过孔导电金属和功率端子组成。本发明通过纳米银焊膏将碳化硅MOSFET芯片和下DBC基板连接。同时在陶瓷转接板上制作矩形框架，并通过填充介电材料，将碳化硅MOSFET芯片嵌入在陶瓷转接板内。芯片和转接板的上表面覆有导电金属层，陶瓷转接板的上下表面分别和上下DBC基板互连，各功率端子分别从上下DBC基板的导电覆铜层引出。该发明可以实现碳化硅MOSFET模块的高温封装，而且可以实现双面散热，提高了散热效率。采用平面互连的方式取代引线键合，减小了模块的寄生电感。

Description

一种碳化硅MOSFET模块的封装结构和制作方法
技术领域
本发明涉及功率电子器件封装技术领域，特别是一种碳化硅功率模块的封装结构和制作方法。
背景技术
电力电子技术的发展总是朝着更高的效率，更高的功率密度以及更高的集成度发展。如今，宽禁带功率半导体功率器件相对于传统硅基功率半导体器件来说，具有更小的体积，更低的导通损耗，更高的击穿电压，更高的导热系数以及更高的工作温度，因此宽禁带功率半导体器件适用于高压，高温，高频的应用场景中，契合电力电子技术的发展趋势。可以说，宽禁带功率半导体器件决定了当今电力电子技术的发展步伐。目前，碳化硅MOSFET器件在新能源汽车，光伏发电，轨道交通及航空航天等多个领域中具有巨大的应用潜力。2018年特斯拉第一个成功将650V碳化硅MOSFET模块应用于其Model 3车型中，这成为了2018年功率半导体与碳化硅领域最引人注目的新闻之一。
虽然碳化硅MOSFET器件相对于传统硅基功率器件具有诸多优势，但是碳化硅功率模块的封装技术目前已成为限制碳化硅功率器件应用的瓶颈技术。主要原因有以下几个方面。首先，碳化硅功率模块的功率密度大，工作温度高。碳化硅功率器件能够在500℃以上的环境温度下工作。且碳化硅功率模块的体积小，集成度更高。然而，传统的硅基功率模块多采用单面散热，热量只能从功率芯片的集电极传出，散热效率较低。高温工作条件下的散热问题是碳化硅功率模块封装的一个关键问题之一。其次，碳化硅功率模块的最高工作频率在硅基功率模块的十倍以上。高频工作条件下即使很低的寄生电感也会使模块产生较大的杂散信号和电磁干扰。然而传统的硅基功率模块多采用引线键合的互连方式，此种互连方式具有较高的寄生电感，因此并不适合高频工作环境。此外，传统的硅基功率模块多采用硅凝胶或环氧树脂等高分子聚合物材料作为电气绝缘，然而高分子材料的最高可能受温度一般多在200～300℃，如何解决好模块的绝缘问题，也是各企业及研究人员关注的一个关键问题之一。
中国专利201810616670.4公开了一种新型封装结构的碳化硅MOSFET功率模块。该功率模块包括：第一直流侧端子、第二直流侧端子、交流侧端子、第一驱动端子、第二驱动端子、第一碳化硅金属氧化物半导体场效应管、第二碳化硅金属氧化物半导体场效应管、二极管以及底座；第一直流侧端子、第二直流侧端子、交流侧端子、第一驱动端子以及第二驱动端子设置在底座的上表面；第一直流侧端子与第二直流侧端子位于同一轴线上。所提供的同轴结构的直流侧端子能够有效地减小直流侧端子的距离并增大其耦合面积，增大直流侧端子的互感，减小功率模块的封装电感，进一步减小功率模块内部碳化硅MOSFET在开关瞬态和短路情况下所承受的电压过冲，减小功率模块的开关损耗。
中国专利201710954332.7公开了一种基于纳米银焊膏双面互连碳化硅MOS器件的模块及封装方法；由功率端子、上DBC基板、下DBC基板、纳米银焊膏、缓冲层、n对碳化硅FRED芯片和碳化硅MOS芯片、栅极电阻、粗铝丝、硅凝胶和模制树脂组成；分别将碳化硅MOS芯片下表面、碳化硅FRED芯片下表面以及缓冲层的下表面平行并联在下DBC基板；同样上DBC基板进行同样的连接；将碳化硅MOS芯片和碳化硅FRED芯片的上表面与上DBC基板的缓冲层上表面相连，同样的，下DBC基板的缓冲层与上DBC基板的碳化硅MOS芯片和碳化硅FRED芯片相互连接。功率芯片和缓冲层与DBC基板的连接均采用纳米银焊膏，具有烧结温度低、熔点高和热导率高优点。
以上发明虽然均在一定程度上实现了碳化硅功率模块在更高频率下的良好应用，但是均未充分发挥出碳化硅功率器件相对于硅基功率器件在高温应用条件下的优势。如何实现碳化硅功率模块的高温封装，对于充分发挥碳化硅功率器件的优势，以及保证功率器件在极端严苛条件下的高温应用具有重要的意义。
发明内容
为了实现碳化硅功率模块的高温，高频工作环境下的应用，本发明提出了一种可耐300℃高温的碳化硅功率模块的封装结构和方法。本发明以内嵌肖特基势垒二极管(SBD)的碳化硅MOSFET芯片为例，通过将碳化硅MOSFET芯片嵌入在陶瓷转接板内，并将陶瓷转接板和上下DBC基板高温键合实现电气互连。MOSFET芯片的底面采用耐高温的纳米银焊膏将焊接在下DBC板上。陶瓷转接板可以实现良好的电气绝缘，而且可耐极高的温度。纳米银焊膏具有很高的熔点(960℃)和良好的热导率(240W·m-1·k-1)。同时，双DBC基板均可连接散热器实现模块的双面散热，因此，该模块可以实现碳化硅功率模块在300℃以上的高温工作环境下的应用。
本发明的技术方案是这样实现的：
一种碳化硅MOSFET模块的封装结构，
由内嵌SBD的碳化硅MOSFET芯片、陶瓷转接板、纳米银焊膏、上DBC基板、下DBC基板、氧化硅介电填充层、再布线层、正极端子、负极端子、门级端子和公共端子组成。所述碳化硅MOSFET芯片的正面有源极和门极，背面为漏极。所述碳化硅MOSFET芯片的漏极通过所述纳米银焊膏和所述下DBC基板的上铜层连接，所述陶瓷转接板也和所述下DBC基板的上铜层连接,所述下DBC基板的上铜层连接有模块的正极端子。所述陶瓷转接板含有矩形框架和圆柱形通孔，所述碳化硅MOSFET芯片嵌入在所述矩形框架内。所述碳化硅MOSFET芯片的上表面以及所述陶瓷转接板的上表面有再布线层和氧化硅介电填充层，所述再布线层和所述氧化硅介电填充层与上DBC基板的下铜层连接，所述再布线层与所述功率模块的门极，负极端子以及公共端子连接。
作为本发明的进一步改进，所述的碳化硅MOSFET模块的封装结构，其特征在于，所述碳化硅MOSFET芯片和所述框架之间存在间隙。所述间隙内有氧化硅填充层，所述圆柱形通孔内填充有导电金属。
一种碳化硅MOSFET模块的制作方法，包括如下步骤：
步骤1，提供一陶瓷转接板，采用激光切割工艺在陶瓷转接板上制作矩形框架和圆柱形通孔。
步骤2，于所述陶瓷转接板的圆柱形通孔内填充导电金属。
步骤3，提供一下DBC基板，通过钢网印刷的方式将纳米银焊膏印刷在下DBC基板上侧的铜层，并将碳化硅MOSFET芯片贴装在纳米银焊膏表面。
步骤4，于下DBC基板的上铜层焊接模块的正极端子。
步骤5，将所述陶瓷转接板粘结在所述下DBC板上侧的铜层，且每个碳化硅MOSFET芯片均嵌入在所述陶瓷转接板上相应的矩形框架内，每个芯片和框架之间均留有间隙。
步骤6，于所述间隙内，所述碳化硅MOSFET芯片和所述陶瓷转接板的上表面制作氧化硅介电填充层。
步骤7，于所述碳化硅MOSFET芯片和所述陶瓷转接板的上表面制作再布线层，所述再布线层嵌入在所述氧化硅介电填充层内。
步骤8，于所述再布线层的上表面焊接模块的门极端子，负极端子和公共端子。
步骤9，将所述再布线层的上表面与上DBC基板的下铜层连接。
作为本发明的进一步改进，所述的碳化硅MOSFET模块的制作方法，其特征在于，每个桥臂可以在上下DBC基板之间并联多个碳化硅功率模块，上下桥臂之间串联，实现不同功率等级的双面互连的半桥碳化硅功率模块封装。
本发明有以下优点：
(1)本发明实现了内嵌肖特基势垒二极管(SBD)的碳化硅MOSFET芯片的高温封装，封装结构不使用聚合物和不耐高温的无铅焊料，模块可承受300℃以上的高温工作环境。
(2)本发明将碳化硅MOSFET芯片潜入于陶瓷转接板内，陶瓷转接板的热膨胀系数和碳化硅MOSFET芯片的热膨胀系数相近，高温环境下由热失配产生的热应力更小。因上下DBC基板的主体也为陶瓷材料，因此中间转接板和上下DBC基板由热失配产生的界面应力更小。
(3)双面散热相较于单面散热而言，可以大大提高模块的散热效率。从而进一步提升模块的耐高温能力。
附图说明
图1为根据本发明实施例绘制的碳化硅MOSFET的模块封装结构示意图。
图2为碳化硅MOSFET芯片结构示意图。
图3为步骤1完成后的封装结构示意图。
图4为步骤3完成后的封装结构示意图。
图5为步骤4完成后的封装结构示意图。
图6为步骤5完成后的封装结构示意图。
图7为步骤6完成后的封装结构示意图。
图8为步骤8完成后的封装结构示意图。
图9为步骤9完成后的封装结构示意图。
结合附图，做以下说明：
1-碳化硅MOSFET芯片 101-碳化硅MOSFET芯片源极
102-碳化硅MOSFET芯片门极 103-碳化硅MOSFET芯片漏极
2-上DBC基板 201-上DBC基板下铜层
3-下DBC基板 301-下DBC基板上铜层
4-陶瓷转接板 401-矩形框架
402-圆柱形通孔 403-间隙
5-氧化硅介电填充层 6-纳米银焊膏
7-再布线层 8-导电金属
9-功率端子 9a-正极端子
9b-门极端子 9c-公共端子
9d-负极端子
具体实施方式
为使本发明能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细说明。为方便说明，实施例附图的结构中各组成部分未按正常比例缩放，故不代表实施例中各结构的实际相对大小。
如图1所示，本发明公开了一种碳化硅MOSFET模块的封装结构，由内嵌SBD的碳化硅MOSFET芯片(1)、上DBC基板(2)、下DBC基板(3)、陶瓷转接板(4)、氧化硅介电填充层(5)、纳米银焊膏(6)、再布线层(7)、导电金属(8)、正极端子(9a)、负极端子(9d)、门极端子(9b)和公共端子(9c)组成。所述碳化硅MOSFET芯片(1)的正面有源极(101)和门极(102)，背面为漏极(103)。所述碳化硅MOSFET芯片(1)的漏极(103)通过所述纳米银焊膏(6)和所述下DBC基板的上铜层(301)连接，所述陶瓷转接板(4)也和所述下DBC基板的上铜层(301)连接,所述下DBC基板的上铜层(301)连接有模块的正极端子(9a)。所述陶瓷转接板(4)含有矩形框架(401)和圆柱形通孔(402)，所述碳化硅MOSFET芯片(1)嵌入在所述矩形框架(401)内。所述碳化硅MOSFET芯片(1)的上表面以及所述陶瓷转接板(4)的上表面有再布线层(7)和氧化硅介电填充层(5)，所述再布线层(7)和所述氧化硅介电填充层(5)与上DBC基板的下铜层(201)连接，所述再布线层(7)与所述功率模块的门极端子(9b)，公共端子(9c)以及负极端子(9d)连接。
优选地，所述碳化硅MOSFET芯片(1)和所述框架(401)之间存在间隙(403)。所述间隙(403)内填充有氧化硅介电填充层(5)，所述圆柱形通孔(402)内填充有导电金属(8)。
以下结合图3-9分别对所述碳化硅MOSFET模块制作方法进行介绍。
步骤1，如图3所示，提供一陶瓷转接板(4)，在陶瓷转接板上制作矩形框架(401)和圆柱形通孔(402)。
步骤2，于所述陶瓷转接板(4)的圆柱形通孔(402)内填充导电金属(8)。
步骤3，如图4所示。提供一下DBC基板(3)，通过钢网印刷的方式将纳米银焊膏(6)印刷在下DBC基板上侧的铜层(301)，并将碳化硅MOSFET芯片(1)贴装在纳米银焊膏(6)表面。
步骤4，如图5所示，于下DBC基板的上铜层(301)焊接模块的正极端子(9a)。
步骤5，如图6所示，将所述陶瓷转接板(4)粘结在所述下DBC板(3)上侧的铜层(301)，且每个碳化硅MOSFET芯片(1)均嵌入在所述陶瓷转接板(4)上相应的矩形框架(401)内，每个芯片和框架之间均留有间隙(403)。
步骤6，如图7所示，于所述间隙(403)内及所述陶瓷转接板(4)，所述碳化硅MOSFET芯片(1)的上表面制作氧化硅介电填充层(5)。
步骤7，于所述陶瓷转接板(4)及所述碳化硅MOSFET芯片(1)的上表面制作再布线层(7)，所述再布线层(7)嵌入在所述氧化硅介电填充层(5)内。
步骤8，于所述再布线层(7)的上表面焊接模块的门极端子(9b)，公共端子(9c)和负极端子(9d)，如图8所示。
步骤9，将所述再布线层(7)的上表面与上DBC基板的下铜层(201)连接。最终结构如图9所示。
优选地，所述的碳化硅MOSFET模块的封装方法，其特征在于，每个桥臂可以在上下DBC基板之间并联多个碳化硅MOSFET芯片(1)，上下桥臂之间串联，实现不同功率等级的平面互连的半桥碳化硅功率模块封装。
以上实施例是参照附图，对本发明的优选实施例进行详细说明。本领域的技术人员通过对上述实施例进行各种形式上的修改或变更，但不背离本发明的实质的情况下，都落在本发明的保护范围之内。

Claims (4)

1.一种碳化硅MOSFET模块的封装结构，其特征在于：由内嵌SBD的碳化硅MOSFET芯片(1)、上DBC基板(2)、下DBC基板(3)、陶瓷转接板(4)、氧化硅介电填充层(5)、纳米银焊膏(6)、再布线层(7)、导电金属(8)、正极端子(9a)、负极端子(9d)、门极端子(9b)和公共端子(9c)组成；所述碳化硅MOSFET芯片(1)的正面有源极(101)和门极(102)，背面为漏极(103)；所述碳化硅MOSFET芯片(1)的漏极(103)通过所述纳米银焊膏(6)和所述下DBC基板的上铜层(301)连接，所述陶瓷转接板(4)也和所述下DBC基板的上铜层(301)连接,所述下DBC基板的上铜层(301)连接有模块的正极端子(9a)；所述陶瓷转接板(4)含有矩形框架(401)和圆柱形通孔(402)，所述碳化硅MOSFET芯片(1)嵌入在所述矩形框架(401)内；所述碳化硅MOSFET芯片(1)和所述框架(401)之间存在间隙(403)；所述间隙(403)内填充有氧化硅介电填充层(5)，所述圆柱形通孔(402)内填充有导电金属(8)；所述碳化硅MOSFET芯片(1)的上表面以及所述陶瓷转接板(4)的上表面有再布线层(7)和氧化硅介电填充层(5)，所述再布线层(7)和所述氧化硅介电填充层(5)与上DBC基板的下铜层(201)连接，所述再布线层(7)与功率模块的门极端子(9b)、公共端子(9c)以及负极端子(9d)连接。
2.根据权利要求1所述的碳化硅MOSFET模块的封装结构，其特征在于，所述碳化硅MOSFET芯片(1)和所述框架(401)之间存在间隙(403)；所述间隙(403)内填充有氧化硅介电填充层(5)，所述圆柱形通孔(402)内填充有导电金属(8)。
3.一种碳化硅MOSFET模块的制作方法，其特征在于，包括以下步骤：
步骤1，提供一陶瓷转接板(4)，在陶瓷转接板上制作矩形框架(401)和圆柱形通孔(402)；
步骤2，于所述陶瓷转接板(4)的圆柱形通孔(402)内填充导电金属(8)；
步骤3，提供一下DBC基板(3)，通过钢网印刷的方式将纳米银焊膏(6)印刷在下DBC基板上侧的铜层(301)，并将碳化硅MOSFET芯片(1)贴装在纳米银焊膏(6)表面；
步骤4，于下DBC基板的上铜层(301)焊接模块的正极端子(9a)；
步骤5，将所述陶瓷转接板(4)粘结在所述下DBC基板(3)上侧的铜层(301)，且每个碳化硅MOSFET芯片(1)均嵌入在所述陶瓷转接板(4)上相应的矩形框架(401)内，每个芯片和框架之间均留有间隙(403)；
步骤6，于所述间隙(403)内及所述陶瓷转接板(4)，所述碳化硅MOSFET芯片(1)的上表面制作氧化硅介电填充层(5)；
步骤7，于所述陶瓷转接板(4)及所述碳化硅MOSFET芯片(1)的上表面制作再布线层(7)，所述再布线层(7)嵌入在所述氧化硅介电填充层(5)内；
步骤8，于所述再布线层(7)的上表面焊接模块的门极端子(9b)、公共端子(9c)和负极端子(9d)。
4.根据权利要求3所述的碳化硅MOSFET模块的制作方法，其特征在于，每个桥臂在上下DBC基板之间并联多个碳化硅MOSFET芯片(1)，上下桥臂之间串联，实现不同功率等级的平面互连的半桥碳化硅功率模块封装。
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