CN112038245A - 一种功率模块内部绑定线的连接工艺 - Google Patents

一种功率模块内部绑定线的连接工艺 Download PDF

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CN112038245A
CN112038245A CN202010709525.8A CN202010709525A CN112038245A CN 112038245 A CN112038245 A CN 112038245A CN 202010709525 A CN202010709525 A CN 202010709525A CN 112038245 A CN112038245 A CN 112038245A
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power module
chip
copper
binding
welding
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CN112038245B (zh
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梁小广
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Wuxi Lipus Semiconductor Co ltd
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Abstract

本发明适用于功率半导体模块的封装技术领域，提供了一种功率模块内部绑定线的连接工艺，包括以下步骤：通过键合的方式在将铜绑定线连接到金属板上，再通过焊接或者烧结的方式将铜绑定线连接到芯片和功率模块的电极上。本发明方法相对于现有直接通过铝绑定线使芯片和DBC相连接的方式，金属板的热膨胀系数与半导体芯片更为接近，功率循环寿命大为提高；相对于现有直接通过铜绑定线使芯片和DBC相连接的方式，芯片表面不需要连接较厚的铜箔层，工艺简单，成本低；相对于上述两种方式，本方法增加了与芯片表面的接触面积，电路的大部分通过较厚的金属板，大大减少了导通电阻，也降低了寄生电感。

Description

一种功率模块内部绑定线的连接工艺
技术领域
本发明属于功率半导体模块的封装技术领域，尤其涉及一种功率模块内部绑定线的连接工艺。
背景技术
在电源、电力电子变换器应用中，功率半导体（IGBT，MOSFET，SiC，GaN等）器件因为被广泛采用，在功率较大的场合下一般使用模块的封装形式。现在被广泛使用的封装形式：功率模块主要由金属底板，焊接层，DBC（双面覆铜陶瓷基板），AMB（箔钎焊的覆铜陶瓷基板），绝缘散热树脂薄膜或者其他绝缘散热材料，绑定线，外壳以及硅胶等组成；功率半导体晶片通过焊接固定到绝缘散热材料上后，通过铝绑定线进行电气连接，再通过回流焊或者烧结等工艺将DBC者其他绝缘散热材料焊接到金属底板上，功率半导体晶片的发出的热通过DBC或者其他绝缘散热材料，焊接层传导到金属底板上，金属底板再通过风冷或者水冷散热出去，如附图1所示。
随着功率半导体芯片的功率密度的提高，尤其是SiC，GaN等宽带半导体的出现，同等电流输出的情况下，芯片面积越来越小，可以进行绑定线的数量与面积也越来越小。这样使用铝绑定线会带来两个问题：一是可以使用的铝绑定线减少，这样等效的导电截面积也随之减小，增加电路的电阻，增加功率模块内的损耗，同时电路的寄生电感也会增加；二是功率循环寿命也会随着铝绑定线与芯片的接触面积的减少也会相应的减少，因为半导体芯片的热膨胀系数为2 X10-6/K到4X10-6/K，铝为23X10-6/K，半导体芯片在高低温变化时产生的热膨胀量的不匹配带来两种材料之间的接触面的机械疲劳，如果接触面积越小则功率循环寿命越少。
也有使用铜绑定线来代替铝绑定线的方法，如附图2所示，但铜绑定线的方式也有一系列的缺点，铜绑定线的硬度远大于铝绑定线，需要更大的力量才能实现铜绑定线与半导体芯片的键合。而半导体芯片无法承受较大的键合力，往往引起芯片的龟裂。目前解决这个问题方法主要为在芯片上连接一层几十微米到200微米的铜箔层来吸收铜绑定线与芯片表面键合时的力量，但是这一方法工艺（镀铜或者烧结铜箔层到芯片表面）复杂，成本高昂。此外，无论铝绑定线还是铜绑定线因为一般直径在500um以下，导电能力有其极限。
发明内容
本发明实施例的目的在于提供一种功率模块内部绑定线的连接工艺，旨在解决背景技术中所提到的问题。
本发明实施例是这样实现的，一种功率模块内部绑定线的连接工艺，所述功率模块至少由金属底板、焊接层、双面覆铜陶瓷基板、绝缘散热材料、绑定线、芯片、外壳以及硅胶组成，所述功率模块还包括金属板，所述连接工艺包括以下步骤：
通过键合的方式在将绑定线连接到金属板上，再通过焊接或者烧结的方式将绑定线连接到芯片和功率模块的电极上。
优选的，所述绑定线由铜、铝、金、银中的至少一种或其他金属制作而成。
优选的，所述绑定线的直径为200um~500um。
优选的，所述金属板由铜、铝、金、银中的至少一种其他金属制作而成。
优选的，所述金属板的厚度为500um~2mm。
优选的，所述绑定线的形状为弧形、台形中的任意一种或其他形状。
优选的，所述金属底板和所述双面覆铜陶瓷基板之间通过焊接连接；所述双面覆铜陶瓷基板和所述芯片之间通过焊接连接；所述外壳通过点胶工艺和所述金属底板相连；所述功率模块的内部灌注所述硅胶。
本发明实施例提供的一种功率模块内部绑定线的连接工艺，通过键合的方式在将绑定线连接到金属板上，再通过焊接或者烧结的方式将绑定线连接到芯片和功率模块的电极上，改变了以往直接通过绑定线将芯片与双面覆铜陶瓷基板相连接的模式，相对于铝绑定线，金属板的热膨胀系数与半导体芯片更为接近，功率循环寿命大为提高；相对于现有直接通过铜绑定线使芯片和DBC相连接的方式，芯片表面不需要连接较厚的铜箔层，工艺简单，成本低；相对于上述两种方式，本发明方法增加了与芯片表面的接触面积，电路的大部分通过较厚的金属板，大大减少了导通电阻，也降低了寄生电感。
附图说明
图1为采用铝绑定线和现有连接工艺的功率模块的结构示意图；
图2为采用铜绑定线和现有连接工艺的功率模块的结构示意图；
图3为本发明实施例提供的绑定线为弧形的功率模块的结构示意图；
图4为本发明实施例提供的绑定线为台形的功率模块的结构示意图。
附图中：1、金属底板；2、外壳；3、焊接层；4、半导体芯片；5、绑定线；6、金属板；7、硅胶；8、双面覆铜陶瓷基板；9、铜箔层。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
以下结合具体实施例对本发明的具体实现进行详细描述。
实施例1
如附图3所示，为本发明一个实施例提供的一种功率模块内部绑定线的连接工艺，所述连接工艺包括以下步骤：
通过超声波键合的方式将直径为300um铜绑定线连接到1.0mm厚的铜板上，再通过焊接的方式将铜绑定线连接到已经连接到绝缘散热材料上的半导体芯片4上和功率模块的电极上。铜绑定线的形状为弧形。
实施例2
如附图3所示，为本发明一个实施例提供的一种功率模块内部绑定线的连接工艺，所述连接工艺包括以下步骤：
通过超声波键合的方式将直径为500um铜绑定线连接到2mm厚的铜板上，再通过焊接的方式将铜绑定线连接到已经连接到绝缘散热材料上的半导体芯片4上和功率模块的电极上。铜绑定线的形状为弧形。
实施例3
如附图3所示，为本发明一个实施例提供的一种功率模块内部绑定线的连接工艺，所述连接工艺包括以下步骤：
通过超声波键合的方式将直径为200um铜绑定线连接到500um厚的铜板上，再通过焊接的方式将铜绑定线连接到已经连接到绝缘散热材料上的半导体芯片4上和功率模块的电极上。铜绑定线的形状为弧形。
具体的，实施例1~3中所述功率模块均还包括金属底板1、外壳2、焊接层3、绝缘散热材料、硅胶7和双面覆铜陶瓷基板8（DBC）。金属底板1和双面覆铜陶瓷基板8之间通过焊接连接，焊接层3为锡膏或者锡片焊接， 金属底板1主要用于功率模块工作时的散热；金属底板1上覆盖有绝缘散热材料，绝缘散热材料可以采用绝缘散热树脂薄膜，半导体芯片4的发出的热通过绝缘散热材料、焊接层3传导到金属底板1上，金属底板1再通过风冷或者水冷将热散出去；双面覆铜陶瓷基板8和芯片之间通过焊接连接，焊接层3为锡膏或者锡片焊接，双面覆铜陶瓷基板8实现设计所需电路结构；外壳2通过点胶工艺和金属底板1相连；所述功率模块的内部灌注硅胶7，用来防腐防潮保护内部电路，同时又对内部各部件进行高压隔离。
通过实施例1~3可知，铜绑定线的直径越大、铜板的厚度越大，功率模块的导电性越好，但受限于功率模块的尺寸大小，铜绑定线的直径和铜板的厚度也不可能无线增加，且铜绑定线的直径和铜板的厚度越大，成本越高。本发明方法相对于现有直接通过铝绑定线使芯片和DBC相连接的方式（如附图1所示），金属板6的热膨胀系数与半导体芯片4更为接近，功率循环寿命大为提高；相对于现有直接通过铜绑定线使芯片和DBC相连接的方式（如附图2所示），芯片表面不需要连接较厚的铜箔层9，工艺简单，成本低；相对于上述两种方式，本发明方法增加了与芯片表面的接触面积，增加了与芯片表面的接触面积，电路的大部分通过较厚的金属板6，大大减少了导通电阻，也降低了寄生电感。
实施例4
如附图4所示，为本发明一个实施例提供的一种功率模块内部绑定线的连接工艺，所述连接工艺包括以下步骤：
通过超声波键合的方式将直径为300um铜绑定线连接到1.0mm厚的铜板上，再通过焊接的方式将铜绑定线连接到已经连接到绝缘散热材料上的半导体芯片4上和功率模块的电极上。铜绑定线的形状为台形。
具体的，实施例4中所述功率模块均还包括金属底板1、外壳2、焊接层3、绝缘散热材料、硅胶7和双面覆铜陶瓷基板8（DBC）。金属底板1和双面覆铜陶瓷基板8之间通过焊接连接，焊接层3为锡膏或者锡片焊接， 金属底板1主要用于功率模块工作时的散热；金属底板1上覆盖有绝缘散热材料，绝缘散热材料可以采用绝缘散热树脂薄膜，半导体芯片4的发出的热通过绝缘散热材料、焊接层3传导到金属底板1上，金属底板1再通过风冷或者水冷将热散出去；双面覆铜陶瓷基板8和芯片之间通过焊接连接，焊接层3为锡膏或者锡片焊接，双面覆铜陶瓷基板8实现设计所需电路结构；外壳2通过点胶工艺和金属底板1相连；所述功率模块的内部灌注硅胶7，用来防腐防潮保护内部电路，同时又对内部各部件进行高压隔离。
通过实施例1和4可知，铜绑定线的形状为台形时，铜绑定线与芯片的接触面积最大；铜绑定线的形状为弧形，铜绑定线与芯片的接触面积次之。铜绑定线与芯片的接触面积越大，导电性越好。本发明方法相对于现有直接通过铝绑定线使芯片和DBC相连接的方式（如附图1所示），金属板6的热膨胀系数与半导体芯片4更为接近，功率循环寿命大为提高；相对于现有直接通过铜绑定线使芯片和DBC相连接的方式（如附图2所示），芯片表面不需要连接较厚的铜箔层9，工艺简单，成本低；相对于上述两种方式，本发明方法增加了与芯片表面的接触面积，增加了与芯片表面的接触面积，电路的大部分通过较厚的金属板6，大大减少了导通电阻，也降低了寄生电感。
实施例5
如附图3所示，为本发明一个实施例提供的一种功率模块内部绑定线的连接工艺，所述连接工艺与实施例1相同，其中不同的是绑定线5为铝绑定线。
具体的，实施例5中所述功率模块均还包括金属底板1、外壳2、焊接层3、绝缘散热材料、硅胶7和双面覆铜陶瓷基板8（DBC）。金属底板1和双面覆铜陶瓷基板8之间通过焊接连接，焊接层3为锡膏或者锡片焊接， 金属底板1主要用于功率模块工作时的散热；金属底板1上覆盖有绝缘散热材料，绝缘散热材料可以采用绝缘散热树脂薄膜，半导体芯片4的发出的热通过绝缘散热材料、焊接层3传导到金属底板1上，金属底板1再通过风冷或者水冷将热散出去；双面覆铜陶瓷基板8和芯片之间通过焊接连接，焊接层3为锡膏或者锡片焊接，双面覆铜陶瓷基板8实现设计所需电路结构；外壳2通过点胶工艺和金属底板1相连；所述功率模块的内部灌注硅胶7，用来防腐防潮保护内部电路，同时又对内部各部件进行高压隔离。
通过实施例1和5可知，铝绑定线的导电性较差，铜绑定线的导电性较好。其中，铜绑定线的成本较高，铝绑定线的成本较小。本发明方法相对于现有直接通过铝绑定线使芯片和DBC相连接的方式（如附图1所示），金属板6的热膨胀系数与半导体芯片4更为接近，功率循环寿命大为提高；相对于现有直接通过铜绑定线使芯片和DBC相连接的方式（如附图2所示），芯片表面不需要连接较厚的铜箔层9，工艺简单，成本低；相对于上述两种方式，本发明方法增加了与芯片表面的接触面积，增加了与芯片表面的接触面积，电路的大部分通过较厚的金属板6，大大减少了导通电阻，也降低了寄生电感。
实施例6
如附图3所示，为本发明一个实施例提供的一种功率模块内部绑定线的连接工艺，所述连接工艺与实施例1相同，其中不同的是金属板6为铝板。
具体的，实施例10~12中所述功率模块均还包括金属底板1、外壳2、焊接层3、绝缘散热材料、硅胶7和双面覆铜陶瓷基板8（DBC）。金属底板1和双面覆铜陶瓷基板8之间通过焊接连接，焊接层3为锡膏或者锡片焊接， 金属底板1主要用于功率模块工作时的散热；金属底板1上覆盖有绝缘散热材料，绝缘散热材料可以采用绝缘散热树脂薄膜，半导体芯片4的发出的热通过绝缘散热材料、焊接层3传导到金属底板1上，金属底板1再通过风冷或者水冷将热散出去；双面覆铜陶瓷基板8和芯片之间通过焊接连接，焊接层3为锡膏或者锡片焊接，双面覆铜陶瓷基板8实现设计所需电路结构；外壳2通过点胶工艺和金属底板1相连；所述功率模块的内部灌注硅胶7，用来防腐防潮保护内部电路，同时又对内部各部件进行高压隔离。
通过实施例1和6可知，铝板的导电性较差，铜板的导电性较好。其中，铜板的成本较高，铝板的成本较小。本发明方法相对于现有直接通过铝绑定线使芯片和DBC相连接的方式（如附图1所示），金属板6的热膨胀系数与半导体芯片4更为接近，功率循环寿命大为提高；相对于现有直接通过铜绑定线使芯片和DBC相连接的方式（如附图2所示），芯片表面不需要连接较厚的铜箔层9，工艺简单，成本低；相对于上述两种方式，本发明方法增加了与芯片表面的接触面积，增加了与芯片表面的接触面积，电路的大部分通过较厚的金属板6，大大减少了导通电阻，也降低了寄生电感。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (7)

1.一种功率模块内部绑定线的连接工艺，所述功率模块至少由金属底板、焊接层、双面覆铜陶瓷基板、绝缘散热材料、绑定线、芯片、外壳以及硅胶组成，其特征在于，所述功率模块还包括金属板，所述连接工艺包括以下步骤：
通过键合的方式在将绑定线连接到金属板上，再通过焊接或者烧结的方式将绑定线连接到芯片和功率模块的电极上。
2.根据权利要求1所述的一种功率模块内部绑定线的连接工艺，其特征在于，所述绑定线由铜、铝、金、银中的至少一种制作而成。
3.根据权利要求1或2中任意一项所述的一种功率模块内部绑定线的连接工艺，其特征在于，所述绑定线的直径为200um~500um。
4.根据权利要求1所述的一种功率模块内部绑定线的连接工艺，其特征在于，所述金属板由铜、铝、金、银中的至少一种制作而成。
5.根据权利要求1或4中任意一项所述的一种功率模块内部绑定线的连接工艺，其特征在于，所述金属板的厚度为500um~2mm。
6.根据权利要求1中任意一项所述的一种功率模块内部绑定线的连接工艺，其特征在于，所述绑定线的形状为弧形、台形中的任意一种。
7.根据权利要求1所述的一种功率模块内部绑定线的连接工艺，其特征在于，所述金属底板和所述双面覆铜陶瓷基板之间通过焊接连接；所述双面覆铜陶瓷基板和所述芯片之间通过焊接连接；所述外壳通过点胶工艺和所述金属底板相连；所述功率模块的内部灌注所述硅胶。
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