SE8103604L - Forfarande for avsettning av oxidskikt genom fotokemisk paangning vid lagtemperatur - Google Patents
Forfarande for avsettning av oxidskikt genom fotokemisk paangning vid lagtemperaturInfo
- Publication number
- SE8103604L SE8103604L SE8103604A SE8103604A SE8103604L SE 8103604 L SE8103604 L SE 8103604L SE 8103604 A SE8103604 A SE 8103604A SE 8103604 A SE8103604 A SE 8103604A SE 8103604 L SE8103604 L SE 8103604L
- Authority
- SE
- Sweden
- Prior art keywords
- substrate
- low temperature
- oxygen atoms
- oxide layers
- deposition
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 230000008021 deposition Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 3
- 230000007935 neutral effect Effects 0.000 abstract 2
- 239000000376 reactant Substances 0.000 abstract 2
- 239000012808 vapor phase Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
- C01B13/20—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
- H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10432379A | 1979-12-17 | 1979-12-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE8103604L true SE8103604L (sv) | 1982-12-10 |
SE442409B SE442409B (sv) | 1985-12-23 |
Family
ID=22299878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8103604A SE442409B (sv) | 1979-12-17 | 1981-06-09 | Forfarande for framstellning av ett skikt av en oxid pa ett underlag |
Country Status (11)
Country | Link |
---|---|
EP (1) | EP0030798B1 (sv) |
JP (1) | JPS5696704A (sv) |
KR (1) | KR840001545B1 (sv) |
CA (1) | CA1183102A (sv) |
CH (1) | CH648691A5 (sv) |
DE (1) | DE3066027D1 (sv) |
GB (1) | GB2094280A (sv) |
HK (1) | HK65284A (sv) |
IL (1) | IL61538A (sv) |
SE (1) | SE442409B (sv) |
SG (1) | SG33584G (sv) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5875828A (ja) * | 1981-10-30 | 1983-05-07 | Ushio Inc | 被膜形成方法 |
GB2111037B (en) * | 1981-11-23 | 1984-10-17 | Hughes Aircraft Co | Preparing substrates for semi-conductors |
US4447469A (en) * | 1982-06-10 | 1984-05-08 | Hughes Aircraft Company | Process for forming sulfide layers by photochemical vapor deposition |
DE3375590D1 (en) * | 1982-06-22 | 1988-03-10 | Hughes Aircraft Co | Low temperature process for depositing epitaxial layers |
GB2131611B (en) * | 1982-11-17 | 1986-11-12 | Standard Telephones Cables Ltd | Dielectric materials |
JPH0614552B2 (ja) * | 1983-02-02 | 1994-02-23 | 富士ゼロックス株式会社 | 光電変換素子の製造方法 |
JPS59164653A (ja) * | 1983-03-08 | 1984-09-17 | Sumitomo Electric Ind Ltd | 金属被覆光フアイバ−の製造方法 |
JPH0685389B2 (ja) * | 1983-12-23 | 1994-10-26 | 日本電信電話株式会社 | 半導体装置の保護膜 |
JPS60162775A (ja) * | 1984-01-31 | 1985-08-24 | Nec Corp | シリコン酸化膜の製造方法 |
JPS60216538A (ja) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | 半導体基板への不純物拡散方法 |
JPS60216539A (ja) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | 半導体装置の製造方法 |
US4595601A (en) * | 1984-05-25 | 1986-06-17 | Kabushiki Kaisha Toshiba | Method of selectively forming an insulation layer |
GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
US4590091A (en) * | 1984-12-17 | 1986-05-20 | Hughes Aircraft Company | Photochemical process for substrate surface preparation |
US4632057A (en) * | 1985-08-05 | 1986-12-30 | Spectrum Cvd, Inc. | CVD plasma reactor |
US4632056A (en) * | 1985-08-05 | 1986-12-30 | Stitz Robert W | CVD temperature control |
US4640224A (en) * | 1985-08-05 | 1987-02-03 | Spectrum Cvd, Inc. | CVD heat source |
US4800105A (en) * | 1986-07-22 | 1989-01-24 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of forming a thin film by chemical vapor deposition |
KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
EP0289963A1 (en) * | 1987-05-04 | 1988-11-09 | General Signal Corporation | Apparatus for, and methods of, obtaining the movement of a substance to a substrate |
EP0306069A3 (en) * | 1987-08-31 | 1990-12-27 | Koninklijke Philips Electronics N.V. | A method of forming an oxide layer on a substrate |
JPH01242496A (ja) * | 1988-03-24 | 1989-09-27 | Mitsubishi Metal Corp | 酸化物系超伝導薄膜の製造方法 |
US5064517A (en) * | 1989-01-18 | 1991-11-12 | Idemitsu Kosan Company Limited | Method for the preparation of fine particulate-metal-containing compound |
DE3937723A1 (de) * | 1989-11-13 | 1991-05-16 | Fraunhofer Ges Forschung | Verfahren und vorrichtung zum herstellen einer silikatschicht in einer integrierten schaltung |
US5262358A (en) * | 1989-11-13 | 1993-11-16 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method for producing a silicate layer in an integrated circuit |
JPH04120732A (ja) * | 1990-09-12 | 1992-04-21 | Hitachi Ltd | 固体素子及びその製造方法 |
US5670018A (en) * | 1995-04-27 | 1997-09-23 | Siemens Aktiengesellschaft | Isotropic silicon etch process that is highly selective to tungsten |
US5979666A (en) * | 1996-06-28 | 1999-11-09 | Douglas; Patrick J. | Apparatus for screening particulate material |
US6461982B2 (en) * | 1997-02-27 | 2002-10-08 | Micron Technology, Inc. | Methods for forming a dielectric film |
US6943392B2 (en) | 1999-08-30 | 2005-09-13 | Micron Technology, Inc. | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
US6558517B2 (en) | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
US6566147B2 (en) | 2001-02-02 | 2003-05-20 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
US20030017266A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US6838122B2 (en) | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
US7011978B2 (en) | 2001-08-17 | 2006-03-14 | Micron Technology, Inc. | Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions |
US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL287925A (sv) * | 1962-01-19 | |||
GB1165575A (en) * | 1966-01-03 | 1969-10-01 | Texas Instruments Inc | Semiconductor Device Stabilization. |
NL6707515A (sv) * | 1967-05-31 | 1968-12-02 | ||
JPS4929099B1 (sv) * | 1970-03-27 | 1974-08-01 | ||
JPS4926747B1 (sv) * | 1970-10-09 | 1974-07-11 | ||
US3907616A (en) * | 1972-11-15 | 1975-09-23 | Texas Instruments Inc | Method of forming doped dielectric layers utilizing reactive plasma deposition |
-
1980
- 1980-11-19 DE DE8080304143T patent/DE3066027D1/de not_active Expired
- 1980-11-19 EP EP80304143A patent/EP0030798B1/en not_active Expired
- 1980-11-21 IL IL61538A patent/IL61538A/xx not_active IP Right Cessation
- 1980-12-17 KR KR1019800004820A patent/KR840001545B1/ko active
- 1980-12-17 JP JP17734080A patent/JPS5696704A/ja active Granted
-
1981
- 1981-03-06 GB GB8107081A patent/GB2094280A/en not_active Withdrawn
- 1981-05-19 CA CA000377778A patent/CA1183102A/en not_active Expired
- 1981-06-09 SE SE8103604A patent/SE442409B/sv not_active IP Right Cessation
- 1981-06-16 CH CH3974/81A patent/CH648691A5/de not_active IP Right Cessation
-
1984
- 1984-04-25 SG SG33584A patent/SG33584G/en unknown
- 1984-08-23 HK HK652/84A patent/HK65284A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
CH648691A5 (en) | 1985-03-29 |
SE442409B (sv) | 1985-12-23 |
IL61538A (en) | 1984-03-30 |
IL61538A0 (en) | 1980-12-31 |
KR830004445A (ko) | 1983-07-13 |
JPS6324923B2 (sv) | 1988-05-23 |
CA1183102A (en) | 1985-02-26 |
GB2094280A (en) | 1982-09-15 |
EP0030798A1 (en) | 1981-06-24 |
SG33584G (en) | 1985-02-08 |
DE3066027D1 (en) | 1984-02-02 |
JPS5696704A (en) | 1981-08-05 |
HK65284A (en) | 1984-08-31 |
EP0030798B1 (en) | 1983-12-28 |
KR840001545B1 (ko) | 1984-10-04 |
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