JPS5260986A - Manufacturing of dielectric thin film - Google Patents

Manufacturing of dielectric thin film

Info

Publication number
JPS5260986A
JPS5260986A JP50136950A JP13695075A JPS5260986A JP S5260986 A JPS5260986 A JP S5260986A JP 50136950 A JP50136950 A JP 50136950A JP 13695075 A JP13695075 A JP 13695075A JP S5260986 A JPS5260986 A JP S5260986A
Authority
JP
Japan
Prior art keywords
thin film
dielectric thin
manufacturing
ionization
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50136950A
Other languages
Japanese (ja)
Other versions
JPS5619927B2 (en
Inventor
Tsuneo Mitsuyu
Kiyotaka Wasa
Shigeru Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50136950A priority Critical patent/JPS5260986A/en
Publication of JPS5260986A publication Critical patent/JPS5260986A/en
Publication of JPS5619927B2 publication Critical patent/JPS5619927B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE: To coat to form the amorphous dielectric thin film consisting of Bi12SiO20 by a sputtering process on the substrate which is heated by using the evaporation mechanism based on ionization by collision.
COPYRIGHT: (C)1977,JPO&Japio
JP50136950A 1975-11-13 1975-11-13 Manufacturing of dielectric thin film Granted JPS5260986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50136950A JPS5260986A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50136950A JPS5260986A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Publications (2)

Publication Number Publication Date
JPS5260986A true JPS5260986A (en) 1977-05-19
JPS5619927B2 JPS5619927B2 (en) 1981-05-11

Family

ID=15187292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50136950A Granted JPS5260986A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Country Status (1)

Country Link
JP (1) JPS5260986A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7125205B2 (en) 2002-09-04 2006-10-24 Kennametal Inc. Cutting tool for rough and finish milling
CN100389071C (en) * 2006-03-09 2008-05-21 上海交通大学 Process for preparing bismuth silicate nano powder and use

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7125205B2 (en) 2002-09-04 2006-10-24 Kennametal Inc. Cutting tool for rough and finish milling
CN100389071C (en) * 2006-03-09 2008-05-21 上海交通大学 Process for preparing bismuth silicate nano powder and use

Also Published As

Publication number Publication date
JPS5619927B2 (en) 1981-05-11

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