JPS5260991A - Manufacturing of dielectric thin film - Google Patents

Manufacturing of dielectric thin film

Info

Publication number
JPS5260991A
JPS5260991A JP50136955A JP13695575A JPS5260991A JP S5260991 A JPS5260991 A JP S5260991A JP 50136955 A JP50136955 A JP 50136955A JP 13695575 A JP13695575 A JP 13695575A JP S5260991 A JPS5260991 A JP S5260991A
Authority
JP
Japan
Prior art keywords
thin film
dielectric thin
manufacturing
ionization
collision
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50136955A
Other languages
Japanese (ja)
Other versions
JPS5623528B2 (en
Inventor
Tsuneo Mitsuyu
Kurataka Wasa
Shigeru Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50136955A priority Critical patent/JPS5260991A/en
Publication of JPS5260991A publication Critical patent/JPS5260991A/en
Publication of JPS5623528B2 publication Critical patent/JPS5623528B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE: To coat to form the double-sided cubic structure dielectric thin film consisting of Bi2O3 including B2O3 by a sputtering process on the substrate which is heated by using the evaporation mechanism based on ionization by collision.
COPYRIGHT: (C)1977,JPO&Japio
JP50136955A 1975-11-13 1975-11-13 Manufacturing of dielectric thin film Granted JPS5260991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50136955A JPS5260991A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50136955A JPS5260991A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Publications (2)

Publication Number Publication Date
JPS5260991A true JPS5260991A (en) 1977-05-19
JPS5623528B2 JPS5623528B2 (en) 1981-06-01

Family

ID=15187402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50136955A Granted JPS5260991A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Country Status (1)

Country Link
JP (1) JPS5260991A (en)

Also Published As

Publication number Publication date
JPS5623528B2 (en) 1981-06-01

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