GB990288A - Improved method of depositing silicon monoxide films - Google Patents

Improved method of depositing silicon monoxide films

Info

Publication number
GB990288A
GB990288A GB32052/62A GB3205262A GB990288A GB 990288 A GB990288 A GB 990288A GB 32052/62 A GB32052/62 A GB 32052/62A GB 3205262 A GB3205262 A GB 3205262A GB 990288 A GB990288 A GB 990288A
Authority
GB
United Kingdom
Prior art keywords
sio
coating
deposition
silicon monoxide
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32052/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB990288A publication Critical patent/GB990288A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/30—Devices switchable between superconducting and normal states
    • H10N60/35—Cryotrons

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

<PICT:0990288/C6-C7/1> A substrate is coated with silicon monoxide by heating a source of SiO above 1300 DEG C. and below 1600 DEG C. at a pressure below 10-5 mm. Hg., and preventing deposition of SiO until the desired temperature of the source, e.g. 1328 DEG C., is attained. The process may be applied to forming layers of metals interlayered with SiO which can be used as cryotrons. For example, Fig. 1 shows SiO films 1 deposited between a gate 5 and magnetic shield 3b consisting of layers of lead with a control layer 3a of tin. The coating of SiO is under predetermined stress which is controlled by the rate of deposition, and details including graphs are given which indicate a preferred rate of coating of 4-40 <\>rA per second. Apparatus is described (not shown) provided with three evaporation stations, each station being also provided with a shutter which prevents deposition until the desired temperature indicated by a thermo-couple is reached. Masks to give a desired pattern of coating are also provided. The SiO may be in tablet form with central holes for stacking on a wire support.
GB32052/62A 1961-09-05 1962-08-21 Improved method of depositing silicon monoxide films Expired GB990288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13592061A 1961-09-05 1961-09-05

Publications (1)

Publication Number Publication Date
GB990288A true GB990288A (en) 1965-04-28

Family

ID=22470378

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32052/62A Expired GB990288A (en) 1961-09-05 1962-08-21 Improved method of depositing silicon monoxide films

Country Status (2)

Country Link
DE (1) DE1278194B (en)
GB (1) GB990288A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170822A (en) * 1985-01-31 1986-08-13 Sharp Kk A method for the production of substrates coated with a uniform dispersion of extremely fine granules
GB2230792A (en) * 1989-04-21 1990-10-31 Secr Defence Multiple source physical vapour deposition.
GB2248852A (en) * 1990-10-16 1992-04-22 Secr Defence Vapour deposition

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0656430B2 (en) * 1993-11-09 2000-01-12 Galileo Vacuum Systems S.R.L. Process and apparatus for the codeposition of metallic oxides on plastic films.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170822A (en) * 1985-01-31 1986-08-13 Sharp Kk A method for the production of substrates coated with a uniform dispersion of extremely fine granules
US4654229A (en) * 1985-01-31 1987-03-31 Sharp Kabushiki Kaisha Method for the production of substrates with a uniform dispersion of extremely fine granules
GB2170822B (en) * 1985-01-31 1989-06-07 Sharp Kk A method for the production of substrates having a uniform dispersion of ultra fine granules deposited thereon
GB2230792A (en) * 1989-04-21 1990-10-31 Secr Defence Multiple source physical vapour deposition.
GB2248852A (en) * 1990-10-16 1992-04-22 Secr Defence Vapour deposition

Also Published As

Publication number Publication date
DE1278194B (en) 1968-09-19

Similar Documents

Publication Publication Date Title
DE3066027D1 (en) Low temperature process for depositing oxide layers by photochemical vapor deposition
SE420914B (en) PROCEDURE FOR COATING AN INSULATIVE SUBSTRATE WITH AN OXID LAYER OF AT LEAST ONE METAL THROUGH REACTIVE ION DEPOSITION
CH542938A (en) Process for preparing a hard coating on a substrate
ES462931A1 (en) Formation of epitaxial layers on substrate wafers utilizing an inert heat radiation ring to promote uniform heating
ES450758A1 (en) Method for fabricating multilayer insulator-semiconductor memory apparatus
GB1005588A (en) Methods of delineating patterns on surfaces
GB982324A (en) Thin film superconductor devices
GB990288A (en) Improved method of depositing silicon monoxide films
FR1064045A (en) Process for obtaining semiconductor layers
GB967002A (en) Improvements in or relating to semiconductor devices
GB1002359A (en) Circuit fabrication
JPS5246784A (en) Process for production of semiconductor device
US2854363A (en) Method of producing semiconductor crystals containing p-n junctions
JP2967784B2 (en) Method and apparatus for forming deposited film
GB1073069A (en) Process for producing a superconductor
JPS5249772A (en) Process for production of semiconductor device
GB968464A (en) Improvements in or relating to deposited electrical circuits
JPS51135363A (en) Method of manufacturing semiconductors and its equipment
GB1398976A (en) Methods of forming evaporated layers
JPS5771131A (en) Formation of conductor for aluminum electrode
JPS5240070A (en) Process for production of semiconductor device
ES8507628A1 (en) Process for coating a substrate with a tin oxide layer.
GB1034813A (en) Improvements relating to coated supports and the manufacture thereof
DE3167929D1 (en) Process for removing electrocatalytically acive protective layers of electrodes comprising a metal core, and application of this process
JPS5249990A (en) Method for vacuum evaporation of multi layr film