FR1064045A - Process for obtaining semiconductor layers - Google Patents

Process for obtaining semiconductor layers

Info

Publication number
FR1064045A
FR1064045A FR1064045DA FR1064045A FR 1064045 A FR1064045 A FR 1064045A FR 1064045D A FR1064045D A FR 1064045DA FR 1064045 A FR1064045 A FR 1064045A
Authority
FR
France
Prior art keywords
germanium
layers
semi
crucible
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Inventor
Jean-Jules-Achille Robillard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1064045A publication Critical patent/FR1064045A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Abstract

732,797. Coating by vapour deposition. TELEFONAKTIEBOLAGET L. M. ERICSSON. Sept. 29, 1952 [Jan. 22, 1952], No. 24374/52. Class 82 (2). [Also in Group XXXVI] One or more semi-conductive layers of germanium containing small amounts of other elements are formed by evaporating pure germanium and the other elements and condensing them, under low pressure, on a support. Semi-conductive layers may be deposited on a copper or nickel plate 18, Fig. 1, by vaporizing germanium in a corundum-lined crucible 11 and another element, e.g. antimony or aluminium, in a crucible 14; 13 and 15 are screens, the latter being rotatable about its axis by magnetic means 17; the plate 18 is heated by an H.F. coil 19 to 350-500‹ C. The semi-conductive properties may be controlled in accordance with measurements of the Hall coefficient of a deposit formed simultaneously on an insulating plate, and the thickness of the layer in accordance with light-absorption measurements on a simultaneously coated glass plate. After deposition, the layers are heated at 400‹ C. for 10 minutes and the temperature then lowered by 100‹ C. steps at 5-minute intervals. In the apparatus of Fig. 2, three layers are deposited on mica plates 22: germanium is contained in the crucible 11 and aluminium and antimony are evaporated from bands 20, 21 of tungsten or tantalum coated therewith. In addition to the magnetically operated screen 15, a magnetically operated masking screen 24 is provided, with apertures so arranged that deposits 31, 32, 33, Fig. 3, may be formed on the mica sheets, 31, 33 being Ge-Sb and 32 Ge-Al. Alternatively, layers of germanium and impurity elements may be deposited separately and the impurity diffused into the germanium by heat treatment.
FR1064045D 1952-01-22 1952-10-02 Process for obtaining semiconductor layers Expired FR1064045A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE307775X 1952-01-22

Publications (1)

Publication Number Publication Date
FR1064045A true FR1064045A (en) 1954-05-10

Family

ID=20307566

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1064045D Expired FR1064045A (en) 1952-01-22 1952-10-02 Process for obtaining semiconductor layers

Country Status (4)

Country Link
BE (1) BE514927A (en)
CH (1) CH307775A (en)
FR (1) FR1064045A (en)
GB (1) GB732797A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1098316B (en) * 1957-06-26 1961-01-26 Union Carbide Corp Process for the production of single-crystalline coatings from doped semiconductor raw materials by vapor deposition in a vacuum
DE1227433B (en) * 1955-07-28 1966-10-27 Siemens Ag Process for the installation of defined interference points in metal or semiconductor layers
DE1237076B (en) * 1962-06-19 1967-03-23 Western Electric Co Process for producing an epitaxially grown silicon film on a semiconductor substrate
DE1262979B (en) * 1961-03-14 1968-03-14 Siemens Ag Method and device for the production of monocrystalline layers by vapor deposition
DE1298833B (en) * 1962-04-13 1969-07-03 Air Reduction Device for vacuum deposition of a large number of firmly adhering layers of a certain thickness made of different materials on a substrate by means of electron bombardment

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548791A (en) * 1955-06-20
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
DE1058634B (en) * 1956-06-07 1959-06-04 Ibm Deutschland Gas diffusion process for manufacturing a transistor
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1071177B (en) * 1958-01-17
US3034924A (en) * 1958-10-30 1962-05-15 Balzers Patent Beteilig Ag Use of a rare earth metal in vaporizing metals and metal oxides
US3036933A (en) * 1959-10-06 1962-05-29 Ibm Vacuum evaporation method
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
US3172778A (en) * 1961-01-03 1965-03-09 Method for producing thin semi- conducting layers of semicon- ductor compounds

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1227433B (en) * 1955-07-28 1966-10-27 Siemens Ag Process for the installation of defined interference points in metal or semiconductor layers
DE1098316B (en) * 1957-06-26 1961-01-26 Union Carbide Corp Process for the production of single-crystalline coatings from doped semiconductor raw materials by vapor deposition in a vacuum
DE1262979B (en) * 1961-03-14 1968-03-14 Siemens Ag Method and device for the production of monocrystalline layers by vapor deposition
DE1298833B (en) * 1962-04-13 1969-07-03 Air Reduction Device for vacuum deposition of a large number of firmly adhering layers of a certain thickness made of different materials on a substrate by means of electron bombardment
DE1237076B (en) * 1962-06-19 1967-03-23 Western Electric Co Process for producing an epitaxially grown silicon film on a semiconductor substrate

Also Published As

Publication number Publication date
GB732797A (en) 1955-06-29
CH307775A (en) 1955-06-15
BE514927A (en)

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