ES462931A1 - Procedimiento para formar una capa epitaxial de un material sobre una superficie de un substrato. - Google Patents

Procedimiento para formar una capa epitaxial de un material sobre una superficie de un substrato.

Info

Publication number
ES462931A1
ES462931A1 ES462931A ES462931A ES462931A1 ES 462931 A1 ES462931 A1 ES 462931A1 ES 462931 A ES462931 A ES 462931A ES 462931 A ES462931 A ES 462931A ES 462931 A1 ES462931 A1 ES 462931A1
Authority
ES
Spain
Prior art keywords
substrate
formation
heat radiation
epitaxial layers
uniform heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES462931A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES462931A1 publication Critical patent/ES462931A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Procedimiento para formar una capa epitaxial de un material sobre una superficie de un substrato, que comprende montar el substrato en un reactor de deposición epitaxial y depositar una capa de material sobre el substrato, caracterizado porque durante la deposición; las partes periféricas del substrato se dejan comprendidas al menos parcialmente dentro de un elemento de enmascaramiento para inhibir la acumulación de la capa sobre las partes periféricas del substrato y para reducir la radiación térmica desde dichas partes e igualar la temperatura de un lado al otro del substrato con el fin de reducir la generación de dislocaciones de deslizamiento en el mismo.
ES462931A 1976-10-05 1977-10-05 Procedimiento para formar una capa epitaxial de un material sobre una superficie de un substrato. Expired ES462931A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72968276A 1976-10-05 1976-10-05

Publications (1)

Publication Number Publication Date
ES462931A1 true ES462931A1 (es) 1978-06-01

Family

ID=24932135

Family Applications (1)

Application Number Title Priority Date Filing Date
ES462931A Expired ES462931A1 (es) 1976-10-05 1977-10-05 Procedimiento para formar una capa epitaxial de un material sobre una superficie de un substrato.

Country Status (9)

Country Link
US (1) US4113547A (es)
JP (1) JPS5346274A (es)
BE (1) BE859262A (es)
DE (1) DE2744601A1 (es)
ES (1) ES462931A1 (es)
FR (1) FR2366871A1 (es)
IT (1) IT1091351B (es)
NL (1) NL7710659A (es)
SE (1) SE7710800L (es)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE7707767U1 (de) * 1977-03-14 1977-09-08 Balzers Hochvakuum Gmbh, 6200 Wiesbaden Halterung fuer substratplaettchen
US4386255A (en) * 1979-12-17 1983-05-31 Rca Corporation Susceptor for rotary disc reactor
US4469529A (en) * 1981-12-04 1984-09-04 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating
US4468259A (en) * 1981-12-04 1984-08-28 Ushio Denki Kabushiki Kaisha Uniform wafer heating by controlling light source and circumferential heating of wafer
JPS58223320A (ja) * 1982-06-22 1983-12-24 Ushio Inc 不純物拡散方法
US4535228A (en) * 1982-12-28 1985-08-13 Ushio Denki Kabushiki Kaisha Heater assembly and a heat-treatment method of semiconductor wafer using the same
US4504730A (en) * 1983-10-04 1985-03-12 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light
US4535227A (en) * 1983-10-04 1985-08-13 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
US5308594A (en) * 1985-12-04 1994-05-03 Massachusetts Institute Of Technology Edge-heat-sink technique for zone melting recrystallization of semiconductor-on-insulator films
US5296089A (en) * 1985-12-04 1994-03-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
US4780174A (en) * 1986-12-05 1988-10-25 Lan Shan Ming Dislocation-free epitaxial growth in radio-frequency heating reactor
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
US5169453A (en) * 1989-03-20 1992-12-08 Toyoko Kagaku Co., Ltd. Wafer supporting jig and a decompressed gas phase growth method using such a jig
US4932358A (en) * 1989-05-18 1990-06-12 Genus, Inc. Perimeter wafer seal
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5149675A (en) * 1990-12-31 1992-09-22 Texas Instruments Incorporated Ring crystallization of wafers to prevent thermal shock
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
JP3184000B2 (ja) * 1993-05-10 2001-07-09 株式会社東芝 薄膜の形成方法およびその装置
US5590239A (en) * 1994-06-06 1996-12-31 Motorola Planar uniform heating surface with additional circumscribing ring
US6279506B1 (en) 1995-06-26 2001-08-28 Aixtron Ag Reactor for coating plane substrates and method for producing said substrates
WO1996000314A2 (de) * 1994-06-24 1996-01-04 Aixtron Gmbh Reaktor und verfahren zum beschichten von flächigen substraten
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
JP3596710B2 (ja) * 1996-09-10 2004-12-02 信越半導体株式会社 気相成長装置用サセプタ
US6132517A (en) * 1997-02-21 2000-10-17 Applied Materials, Inc. Multiple substrate processing apparatus for enhanced throughput
US6222990B1 (en) * 1997-12-03 2001-04-24 Steag Rtp Systems Heating element for heating the edges of wafers in thermal processing chambers
KR100436657B1 (ko) * 2001-12-17 2004-06-22 미래산업 주식회사 반도체 소자 테스트 핸들러의 소자 가열 및 냉각장치
US6818533B2 (en) * 2002-05-09 2004-11-16 Taiwan Semiconductor Manufacturing Co., Ltd Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects
US20060194059A1 (en) * 2005-02-25 2006-08-31 Honeywell International Inc. Annular furnace spacers and method of using same
CN101600819B (zh) * 2006-12-08 2012-08-15 卢米洛格股份有限公司 通过在防止基材边缘的生长的基材上的外延生长制造氮化物单晶的方法
TW200952115A (en) * 2008-06-13 2009-12-16 Huga Optotech Inc Wafer carrier and epitaxy machine using the same
KR101137545B1 (ko) * 2009-12-30 2012-04-20 주식회사 탑 엔지니어링 일체형 웨이퍼 트레이

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297085B (de) * 1964-01-10 1969-06-12 Siemens Ag Verfahren zum Abscheiden einer einkristallinen Halbleiterschicht
DE1289832B (de) * 1964-08-21 1969-02-27 Siemens Ag Vorrichtung zur Herstellung planer Oberflaechen von aus der Gasphase abgeschiedenen Halbleiterkristallschichten
DE1544264C3 (de) * 1965-07-01 1974-10-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Halbleiterschichten durch Abscheiden aus der Gasphase
US3436255A (en) * 1965-07-06 1969-04-01 Monsanto Co Electric resistance heaters
US3539759A (en) * 1968-11-08 1970-11-10 Ibm Susceptor structure in silicon epitaxy
NL7209297A (es) * 1972-07-01 1974-01-03
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield

Also Published As

Publication number Publication date
JPS5346274A (en) 1978-04-25
FR2366871A1 (fr) 1978-05-05
BE859262A (fr) 1978-01-16
IT1091351B (it) 1985-07-06
SE7710800L (sv) 1978-04-06
DE2744601A1 (de) 1978-04-06
NL7710659A (nl) 1978-04-07
US4113547A (en) 1978-09-12

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