IT1091351B - Procedimento per formare uno strato epitassiale sulla superficie di un sottostrato particolarmente per semiconduttori - Google Patents

Procedimento per formare uno strato epitassiale sulla superficie di un sottostrato particolarmente per semiconduttori

Info

Publication number
IT1091351B
IT1091351B IT69207/77A IT6920777A IT1091351B IT 1091351 B IT1091351 B IT 1091351B IT 69207/77 A IT69207/77 A IT 69207/77A IT 6920777 A IT6920777 A IT 6920777A IT 1091351 B IT1091351 B IT 1091351B
Authority
IT
Italy
Prior art keywords
semiconductors
procedure
substrate
forming
epitaxial layer
Prior art date
Application number
IT69207/77A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT1091351B publication Critical patent/IT1091351B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT69207/77A 1976-10-05 1977-10-04 Procedimento per formare uno strato epitassiale sulla superficie di un sottostrato particolarmente per semiconduttori IT1091351B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72968276A 1976-10-05 1976-10-05

Publications (1)

Publication Number Publication Date
IT1091351B true IT1091351B (it) 1985-07-06

Family

ID=24932135

Family Applications (1)

Application Number Title Priority Date Filing Date
IT69207/77A IT1091351B (it) 1976-10-05 1977-10-04 Procedimento per formare uno strato epitassiale sulla superficie di un sottostrato particolarmente per semiconduttori

Country Status (9)

Country Link
US (1) US4113547A (it)
JP (1) JPS5346274A (it)
BE (1) BE859262A (it)
DE (1) DE2744601A1 (it)
ES (1) ES462931A1 (it)
FR (1) FR2366871A1 (it)
IT (1) IT1091351B (it)
NL (1) NL7710659A (it)
SE (1) SE7710800L (it)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE7707767U1 (de) * 1977-03-14 1977-09-08 Balzers Hochvakuum Gmbh, 6200 Wiesbaden Halterung fuer substratplaettchen
US4386255A (en) * 1979-12-17 1983-05-31 Rca Corporation Susceptor for rotary disc reactor
US4468259A (en) * 1981-12-04 1984-08-28 Ushio Denki Kabushiki Kaisha Uniform wafer heating by controlling light source and circumferential heating of wafer
US4469529A (en) * 1981-12-04 1984-09-04 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating
JPS58223320A (ja) * 1982-06-22 1983-12-24 Ushio Inc 不純物拡散方法
US4535228A (en) * 1982-12-28 1985-08-13 Ushio Denki Kabushiki Kaisha Heater assembly and a heat-treatment method of semiconductor wafer using the same
US4504730A (en) * 1983-10-04 1985-03-12 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light
US4535227A (en) * 1983-10-04 1985-08-13 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
US5308594A (en) * 1985-12-04 1994-05-03 Massachusetts Institute Of Technology Edge-heat-sink technique for zone melting recrystallization of semiconductor-on-insulator films
US5296089A (en) * 1985-12-04 1994-03-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
US4780174A (en) * 1986-12-05 1988-10-25 Lan Shan Ming Dislocation-free epitaxial growth in radio-frequency heating reactor
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
US5169453A (en) * 1989-03-20 1992-12-08 Toyoko Kagaku Co., Ltd. Wafer supporting jig and a decompressed gas phase growth method using such a jig
US4932358A (en) * 1989-05-18 1990-06-12 Genus, Inc. Perimeter wafer seal
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5149675A (en) * 1990-12-31 1992-09-22 Texas Instruments Incorporated Ring crystallization of wafers to prevent thermal shock
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
JP3184000B2 (ja) * 1993-05-10 2001-07-09 株式会社東芝 薄膜の形成方法およびその装置
US5590239A (en) * 1994-06-06 1996-12-31 Motorola Planar uniform heating surface with additional circumscribing ring
DE19522574A1 (de) * 1994-06-24 1996-01-18 Aixtron Gmbh Reaktor zur Beschichtung von flächigen Substraten und Verfahren zur Herstellung derartiger Substrate
US6279506B1 (en) 1995-06-26 2001-08-28 Aixtron Ag Reactor for coating plane substrates and method for producing said substrates
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
JP3596710B2 (ja) * 1996-09-10 2004-12-02 信越半導体株式会社 気相成長装置用サセプタ
US6132517A (en) * 1997-02-21 2000-10-17 Applied Materials, Inc. Multiple substrate processing apparatus for enhanced throughput
US6222990B1 (en) * 1997-12-03 2001-04-24 Steag Rtp Systems Heating element for heating the edges of wafers in thermal processing chambers
KR100436657B1 (ko) * 2001-12-17 2004-06-22 미래산업 주식회사 반도체 소자 테스트 핸들러의 소자 가열 및 냉각장치
US6818533B2 (en) * 2002-05-09 2004-11-16 Taiwan Semiconductor Manufacturing Co., Ltd Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects
US20060194059A1 (en) * 2005-02-25 2006-08-31 Honeywell International Inc. Annular furnace spacers and method of using same
US8557042B2 (en) 2006-12-08 2013-10-15 Saint-Gobain Cristaux Et Detecteurs Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
TW200952115A (en) * 2008-06-13 2009-12-16 Huga Optotech Inc Wafer carrier and epitaxy machine using the same
KR101137545B1 (ko) * 2009-12-30 2012-04-20 주식회사 탑 엔지니어링 일체형 웨이퍼 트레이

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297085B (de) * 1964-01-10 1969-06-12 Siemens Ag Verfahren zum Abscheiden einer einkristallinen Halbleiterschicht
DE1289832B (de) * 1964-08-21 1969-02-27 Siemens Ag Vorrichtung zur Herstellung planer Oberflaechen von aus der Gasphase abgeschiedenen Halbleiterkristallschichten
DE1544264C3 (de) * 1965-07-01 1974-10-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Halbleiterschichten durch Abscheiden aus der Gasphase
US3436255A (en) * 1965-07-06 1969-04-01 Monsanto Co Electric resistance heaters
US3539759A (en) * 1968-11-08 1970-11-10 Ibm Susceptor structure in silicon epitaxy
NL7209297A (it) * 1972-07-01 1974-01-03
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield

Also Published As

Publication number Publication date
US4113547A (en) 1978-09-12
ES462931A1 (es) 1978-06-01
NL7710659A (nl) 1978-04-07
DE2744601A1 (de) 1978-04-06
FR2366871A1 (fr) 1978-05-05
JPS5346274A (en) 1978-04-25
BE859262A (fr) 1978-01-16
SE7710800L (sv) 1978-04-06

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