KR830004445A - 산화막의 광화학적 저온 증착법 - Google Patents

산화막의 광화학적 저온 증착법

Info

Publication number
KR830004445A
KR830004445A KR1019800004820A KR800004820A KR830004445A KR 830004445 A KR830004445 A KR 830004445A KR 1019800004820 A KR1019800004820 A KR 1019800004820A KR 800004820 A KR800004820 A KR 800004820A KR 830004445 A KR830004445 A KR 830004445A
Authority
KR
South Korea
Prior art keywords
oxygen
sih
containing precursor
vapor phase
phase reactant
Prior art date
Application number
KR1019800004820A
Other languages
English (en)
Other versions
KR840001545B1 (ko
Inventor
더블유. 피터즈 존
Original Assignee
애라 하이가지안
휴우즈스 애어크라프트 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 애라 하이가지안, 휴우즈스 애어크라프트 캄파니 filed Critical 애라 하이가지안
Publication of KR830004445A publication Critical patent/KR830004445A/ko
Application granted granted Critical
Publication of KR840001545B1 publication Critical patent/KR840001545B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/20—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/471—Inorganic layers
    • H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Silicon Compounds (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

산화막의 광화학적 저온 증착법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1 및 제2실시예에 따른 방법을 수행하기 위한 소정 장치의 개략도로서, 이 장치에서는 산소 함유 선구물질의 수은 감광 해리(解離)에 의하여 중성 산소 원자가 형성되고 반응하여 도핑 또는 도핑되지 않은 산화막을 각각 생성한다. 제2도는 본 발명의 제3 및 제4실시예에 따른 방법을 수행하기 위한 소정장치의 개략도로서, 이 장치에서는 산소 함유 선구물질의 직접 해리에 의하여 중성 산소 원자가 형성되고 반응하여 도핑 또는 도핑되지 않은 산화막을 각각 생성한다.

Claims (11)

  1. 선정된 소지를 소정의 파장을 가진 복사선 존재하에 증기상 반응물질 및 산소 함유 선구물질에 노축시켜 중성 산소원자를 광화학적으로 발생시키고 이 산소 원자를 증기상 반응물질과 반응시켜서 선정된 온도, 압력 및 유속 조건하에 상기 소지의 표면상에 일정재료의 산화막을 형성시키는 것이 특징인 산화막의 광화학적 저온 증착법.
  2. 특허청구의 범위 제1항 기재에 있어서, 증기상 반응물질이 실리콘, 게르마늄, 갈륨, 붕소, 인듐, 알루미늄, 티탄, 텅스텐 또는 하프늄을 함유하는 것이 특징인 방법.
  3. 특허청구의 범위 제 2 항 기재에 있어서, 증기상 반응물질이 실란(SiH4)이고, 산화물이 이산화실리콘 및(또는) 일산화실리콘인 것이 특징인 방법.
  4. 전술한 특허청구의 범위 중 임의의 항에 있어서, 산소 함유 선구물질이 아산화질소(N2O), 이산화질소(NO2) 또는 분자상 산소(O2)인 것이 특징인 방법.
  5. 전술한 특허청구의 범위 중 임의의 항에 있어서, 산화막이 광화학적으로 발생된 도핑제 원자 존재하에 형성시켜서 도핑제 원자를 그 산화물내에 포함시키는 것이 특징인 방법.
  6. 전술한 특허청구의 범위중 임의의 항에 있어서, 수은 증기를 반응물질 및 선구물질에 첨가하여 선정된 산소 함유 선구물질을 감광 해리시키는 것이 특징인 방법.
  7. 특허청구의 범위 제6항에 있어서, 산소함유 선구물질이 아산화질소(N2O)이고, 증기상 반응물질이 실란(SiH4)이며, SiH4대 N2O의 가스비가 3 대 12밀리미터(mm)이고, 반응온도가 30 내지 200℃인 정지식 광화학 반응계 내에서 반응시키는 것이 특징인 방법.
  8. 특허청구의 범위 제6항 기재에 있어서, 산소 함유 선구물질이 아산화질소(N2O)이고, 증기상 반응물질이 실란(SiH4)이며 SiH4대 N2O의 가스비가 매분 2 대 10 표준입방센티미터(sccm)이고, 반응온도가 30 내지 200℃인 연속 유동식 광화학 반응계내에서 반응시키는 것이 특징인 방법.
  9. 특허청구의 범위 제1항 내지 제5항 중 임의의 항 기재에 있어서, 산소 함유 선구물질이 아산화질소(N2O)이고, 증기상 반응물질이 실란(SiH4)이며, 미리 측정한 파장이 1750 내지 1950Å이고, SiH4대 N2O의 가스비가 2 대 60sccm이며, 반응온도가 30 내지 200℃이고, 산화물이 이산화실리콘(SiO2)인 것이 특징인 방법.
  10. 특허청구의 범위 제1항 내지 제5항 중 임의의 항 기재에 있어서, 산소함유 선구물질이 분자상 산소(O2)이고, 여기에 질소(N2)를 혼합하며, 파장이 1849Å이고, 증기상 반응물질이 실란(SiH4)이며, 압력은 0내지 5토르(Torr)이고, SiH4/O2/N2의 가스비가 1/20/80sccm인 것이 특징인 방법.
  11. 특허청구의 범위 제 5 항 또는 제 6 항 기재에 있어서, 도핑제 함유 선구물질인 포스핀(pH3), 디보란(B2H6), 아르신(AsH3), 스티빈(SbH3), 셀렌화수소(H2Se), 황화수소(H2S) 또는 텔루르화수소(H2Te) 중 임의의 것을 사용하는 것이 특징인 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019800004820A 1979-12-17 1980-12-17 산화막의 광화적 저온 증착법 KR840001545B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10432379A 1979-12-17 1979-12-17
US104,323 1979-12-17
US104.323 1979-12-17

Publications (2)

Publication Number Publication Date
KR830004445A true KR830004445A (ko) 1983-07-13
KR840001545B1 KR840001545B1 (ko) 1984-10-04

Family

ID=22299878

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019800004820A KR840001545B1 (ko) 1979-12-17 1980-12-17 산화막의 광화적 저온 증착법

Country Status (11)

Country Link
EP (1) EP0030798B1 (ko)
JP (1) JPS5696704A (ko)
KR (1) KR840001545B1 (ko)
CA (1) CA1183102A (ko)
CH (1) CH648691A5 (ko)
DE (1) DE3066027D1 (ko)
GB (1) GB2094280A (ko)
HK (1) HK65284A (ko)
IL (1) IL61538A (ko)
SE (1) SE442409B (ko)
SG (1) SG33584G (ko)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875828A (ja) * 1981-10-30 1983-05-07 Ushio Inc 被膜形成方法
GB2111037B (en) * 1981-11-23 1984-10-17 Hughes Aircraft Co Preparing substrates for semi-conductors
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition
AU559363B2 (en) * 1982-06-22 1987-03-05 Hughes Aircraft Co. Low temperature process for depositing epitaxial layers
GB2131611B (en) * 1982-11-17 1986-11-12 Standard Telephones Cables Ltd Dielectric materials
JPH0614552B2 (ja) * 1983-02-02 1994-02-23 富士ゼロックス株式会社 光電変換素子の製造方法
JPS59164653A (ja) * 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd 金属被覆光フアイバ−の製造方法
JPH0685389B2 (ja) * 1983-12-23 1994-10-26 日本電信電話株式会社 半導体装置の保護膜
JPS60162775A (ja) * 1984-01-31 1985-08-24 Nec Corp シリコン酸化膜の製造方法
JPS60216539A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPS60216538A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体基板への不純物拡散方法
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US4590091A (en) * 1984-12-17 1986-05-20 Hughes Aircraft Company Photochemical process for substrate surface preparation
US4640224A (en) * 1985-08-05 1987-02-03 Spectrum Cvd, Inc. CVD heat source
US4632057A (en) * 1985-08-05 1986-12-30 Spectrum Cvd, Inc. CVD plasma reactor
US4632056A (en) * 1985-08-05 1986-12-30 Stitz Robert W CVD temperature control
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
EP0289963A1 (en) * 1987-05-04 1988-11-09 General Signal Corporation Apparatus for, and methods of, obtaining the movement of a substance to a substrate
EP0306069A3 (en) * 1987-08-31 1990-12-27 Koninklijke Philips Electronics N.V. A method of forming an oxide layer on a substrate
JPH01242496A (ja) * 1988-03-24 1989-09-27 Mitsubishi Metal Corp 酸化物系超伝導薄膜の製造方法
US5064517A (en) * 1989-01-18 1991-11-12 Idemitsu Kosan Company Limited Method for the preparation of fine particulate-metal-containing compound
US5262358A (en) * 1989-11-13 1993-11-16 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for producing a silicate layer in an integrated circuit
DE3937723A1 (de) * 1989-11-13 1991-05-16 Fraunhofer Ges Forschung Verfahren und vorrichtung zum herstellen einer silikatschicht in einer integrierten schaltung
JPH04120732A (ja) * 1990-09-12 1992-04-21 Hitachi Ltd 固体素子及びその製造方法
US5670018A (en) * 1995-04-27 1997-09-23 Siemens Aktiengesellschaft Isotropic silicon etch process that is highly selective to tungsten
US5979666A (en) * 1996-06-28 1999-11-09 Douglas; Patrick J. Apparatus for screening particulate material
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
US6943392B2 (en) 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6566147B2 (en) 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
US6838122B2 (en) 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US7011978B2 (en) 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287925A (ko) * 1962-01-19
GB1165575A (en) * 1966-01-03 1969-10-01 Texas Instruments Inc Semiconductor Device Stabilization.
NL6707515A (ko) * 1967-05-31 1968-12-02
JPS4929099B1 (ko) * 1970-03-27 1974-08-01
JPS4926747B1 (ko) * 1970-10-09 1974-07-11
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition

Also Published As

Publication number Publication date
IL61538A0 (en) 1980-12-31
HK65284A (en) 1984-08-31
SE8103604L (sv) 1982-12-10
EP0030798B1 (en) 1983-12-28
GB2094280A (en) 1982-09-15
JPS5696704A (en) 1981-08-05
IL61538A (en) 1984-03-30
SG33584G (en) 1985-02-08
KR840001545B1 (ko) 1984-10-04
CH648691A5 (en) 1985-03-29
SE442409B (sv) 1985-12-23
CA1183102A (en) 1985-02-26
EP0030798A1 (en) 1981-06-24
JPS6324923B2 (ko) 1988-05-23
DE3066027D1 (en) 1984-02-02

Similar Documents

Publication Publication Date Title
KR830004445A (ko) 산화막의 광화학적 저온 증착법
US4371587A (en) Low temperature process for depositing oxide layers by photochemical vapor deposition
US4751149A (en) Chemical vapor deposition of zinc oxide films and products
KR960032641A (ko) 반도체장치 및 절연막의 형성방법
KR840005915A (ko) 극초단파 에너지를 사용하여 비결정 반도체 합금 및 소자를 제조하는 방법
GB1233908A (ko)
KR940004714A (ko) 화학증착에 의한 과포화 희토류 원소 도핑 반도체층
TW200406503A (en) Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition
KR840005277A (ko) 에피텍셜층이 피착하기 위한 저온처리방법
KR950000921A (ko) 고융점 금속질소화물의 증착방법 및 고융점 금속질소화물을 함유하는 전도막의 형성방법
KR890011029A (ko) 기상에피택셜 성장법
JPS61234534A (ja) 窒化珪素被膜作成方法
GB1100780A (en) Improvements in or relating to the diffusion of doping substances into semiconductor crystals
KR920008876A (ko) Cvd실리콘 산화질화막의 제조방법
Hwang et al. Thermodynamic approach to the chemical vapor deposition process
GB1206500A (en) Manufacturing silicon carbide
Bloem Equilibrium and kinetics in the chemical vapour deposition of silicon
GB1462253A (en) Methods of depositing silicon dioxide layers on silicon substrates
Hurle et al. Doping of epitaxial silicon
Redwing et al. Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the Group V source
GB1241397A (en) Improvements in or relating to the production of p-doped zones in semiconductor monocrystals
Nagao et al. Growth and characterization of Bi 12 SiO 20 films by metalorganic chemical vapor deposition
KR970030477A (ko) 실리콘 질화막 형성방법
Mishima et al. Substitutional doping of photochemically‐deposited amorphous hydrogenated silicon
KR970048923A (ko) 반도체 소자의 선택적 산화 마스크 제조 방법