KR830004445A - 산화막의 광화학적 저온 증착법 - Google Patents

산화막의 광화학적 저온 증착법

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KR830004445A
KR830004445A KR1019800004820A KR800004820A KR830004445A KR 830004445 A KR830004445 A KR 830004445A KR 1019800004820 A KR1019800004820 A KR 1019800004820A KR 800004820 A KR800004820 A KR 800004820A KR 830004445 A KR830004445 A KR 830004445A
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oxygen
sih
containing precursor
vapor phase
phase reactant
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KR840001545B1 (ko
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더블유. 피터즈 존
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애라 하이가지안
휴우즈스 애어크라프트 캄파니
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Abstract

내용 없음

Description

산화막의 광화학적 저온 증착법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1 및 제2실시예에 따른 방법을 수행하기 위한 소정 장치의 개략도로서, 이 장치에서는 산소 함유 선구물질의 수은 감광 해리(解離)에 의하여 중성 산소 원자가 형성되고 반응하여 도핑 또는 도핑되지 않은 산화막을 각각 생성한다. 제2도는 본 발명의 제3 및 제4실시예에 따른 방법을 수행하기 위한 소정장치의 개략도로서, 이 장치에서는 산소 함유 선구물질의 직접 해리에 의하여 중성 산소 원자가 형성되고 반응하여 도핑 또는 도핑되지 않은 산화막을 각각 생성한다.

Claims (11)

  1. 선정된 소지를 소정의 파장을 가진 복사선 존재하에 증기상 반응물질 및 산소 함유 선구물질에 노축시켜 중성 산소원자를 광화학적으로 발생시키고 이 산소 원자를 증기상 반응물질과 반응시켜서 선정된 온도, 압력 및 유속 조건하에 상기 소지의 표면상에 일정재료의 산화막을 형성시키는 것이 특징인 산화막의 광화학적 저온 증착법.
  2. 특허청구의 범위 제1항 기재에 있어서, 증기상 반응물질이 실리콘, 게르마늄, 갈륨, 붕소, 인듐, 알루미늄, 티탄, 텅스텐 또는 하프늄을 함유하는 것이 특징인 방법.
  3. 특허청구의 범위 제 2 항 기재에 있어서, 증기상 반응물질이 실란(SiH4)이고, 산화물이 이산화실리콘 및(또는) 일산화실리콘인 것이 특징인 방법.
  4. 전술한 특허청구의 범위 중 임의의 항에 있어서, 산소 함유 선구물질이 아산화질소(N2O), 이산화질소(NO2) 또는 분자상 산소(O2)인 것이 특징인 방법.
  5. 전술한 특허청구의 범위 중 임의의 항에 있어서, 산화막이 광화학적으로 발생된 도핑제 원자 존재하에 형성시켜서 도핑제 원자를 그 산화물내에 포함시키는 것이 특징인 방법.
  6. 전술한 특허청구의 범위중 임의의 항에 있어서, 수은 증기를 반응물질 및 선구물질에 첨가하여 선정된 산소 함유 선구물질을 감광 해리시키는 것이 특징인 방법.
  7. 특허청구의 범위 제6항에 있어서, 산소함유 선구물질이 아산화질소(N2O)이고, 증기상 반응물질이 실란(SiH4)이며, SiH4대 N2O의 가스비가 3 대 12밀리미터(mm)이고, 반응온도가 30 내지 200℃인 정지식 광화학 반응계 내에서 반응시키는 것이 특징인 방법.
  8. 특허청구의 범위 제6항 기재에 있어서, 산소 함유 선구물질이 아산화질소(N2O)이고, 증기상 반응물질이 실란(SiH4)이며 SiH4대 N2O의 가스비가 매분 2 대 10 표준입방센티미터(sccm)이고, 반응온도가 30 내지 200℃인 연속 유동식 광화학 반응계내에서 반응시키는 것이 특징인 방법.
  9. 특허청구의 범위 제1항 내지 제5항 중 임의의 항 기재에 있어서, 산소 함유 선구물질이 아산화질소(N2O)이고, 증기상 반응물질이 실란(SiH4)이며, 미리 측정한 파장이 1750 내지 1950Å이고, SiH4대 N2O의 가스비가 2 대 60sccm이며, 반응온도가 30 내지 200℃이고, 산화물이 이산화실리콘(SiO2)인 것이 특징인 방법.
  10. 특허청구의 범위 제1항 내지 제5항 중 임의의 항 기재에 있어서, 산소함유 선구물질이 분자상 산소(O2)이고, 여기에 질소(N2)를 혼합하며, 파장이 1849Å이고, 증기상 반응물질이 실란(SiH4)이며, 압력은 0내지 5토르(Torr)이고, SiH4/O2/N2의 가스비가 1/20/80sccm인 것이 특징인 방법.
  11. 특허청구의 범위 제 5 항 또는 제 6 항 기재에 있어서, 도핑제 함유 선구물질인 포스핀(pH3), 디보란(B2H6), 아르신(AsH3), 스티빈(SbH3), 셀렌화수소(H2Se), 황화수소(H2S) 또는 텔루르화수소(H2Te) 중 임의의 것을 사용하는 것이 특징인 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019800004820A 1979-12-17 1980-12-17 산화막의 광화적 저온 증착법 KR840001545B1 (ko)

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