SE513284C2 - Halvledarkomponent med linjär ström-till-spänningskarasterik - Google Patents
Halvledarkomponent med linjär ström-till-spänningskarasterikInfo
- Publication number
- SE513284C2 SE513284C2 SE9602880A SE9602880A SE513284C2 SE 513284 C2 SE513284 C2 SE 513284C2 SE 9602880 A SE9602880 A SE 9602880A SE 9602880 A SE9602880 A SE 9602880A SE 513284 C2 SE513284 C2 SE 513284C2
- Authority
- SE
- Sweden
- Prior art keywords
- source
- doped
- operating region
- semiconductor device
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims description 10
- 230000002457 bidirectional effect Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000012258 culturing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9602880A SE513284C2 (sv) | 1996-07-26 | 1996-07-26 | Halvledarkomponent med linjär ström-till-spänningskarasterik |
| JP10508731A JP2000516396A (ja) | 1996-07-26 | 1997-07-04 | 線形な電流・電圧特性を備えた半導体部品 |
| AU37117/97A AU3711797A (en) | 1996-07-26 | 1997-07-04 | Semiconductor component with linear current-to-voltage characteristics |
| EP97933940A EP0958612A2 (fr) | 1996-07-26 | 1997-07-04 | Composant a semi-conducteur a caracteristiques courant/tension lineaires |
| PCT/SE1997/001222 WO1998005075A2 (fr) | 1996-07-26 | 1997-07-04 | Composant a semi-conducteur a caracteristiques courant/tension lineaires |
| CN97198000A CN1130776C (zh) | 1996-07-26 | 1997-07-04 | 具有线性电流电压特性的半导体元件 |
| KR1019997000636A KR100317458B1 (ko) | 1996-07-26 | 1997-07-04 | 선형 전류-전압특성을 가진 반도체 소자 |
| CA002261719A CA2261719A1 (fr) | 1996-07-26 | 1997-07-04 | Composant a semi-conducteur a caracteristiques courant/tension lineaires |
| TW086110090A TW334604B (en) | 1996-07-26 | 1997-07-16 | Semiconductor component with linear current-to-voltage characteristics |
| US08/900,110 US5886384A (en) | 1996-07-26 | 1997-07-25 | Semiconductor component with linear current to voltage characteristics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9602880A SE513284C2 (sv) | 1996-07-26 | 1996-07-26 | Halvledarkomponent med linjär ström-till-spänningskarasterik |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| SE9602880D0 SE9602880D0 (sv) | 1996-07-26 |
| SE9602880L SE9602880L (sv) | 1998-01-27 |
| SE513284C3 SE513284C3 (sv) | 1998-01-27 |
| SE513284C2 true SE513284C2 (sv) | 2000-08-14 |
Family
ID=20403484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9602880A SE513284C2 (sv) | 1996-07-26 | 1996-07-26 | Halvledarkomponent med linjär ström-till-spänningskarasterik |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US5886384A (fr) |
| EP (1) | EP0958612A2 (fr) |
| JP (1) | JP2000516396A (fr) |
| KR (1) | KR100317458B1 (fr) |
| CN (1) | CN1130776C (fr) |
| AU (1) | AU3711797A (fr) |
| CA (1) | CA2261719A1 (fr) |
| SE (1) | SE513284C2 (fr) |
| TW (1) | TW334604B (fr) |
| WO (1) | WO1998005075A2 (fr) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4476390B2 (ja) * | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6028337A (en) * | 1998-11-06 | 2000-02-22 | Philips North America Corporation | Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region |
| SE9901575L (sv) * | 1999-05-03 | 2000-11-04 | Eklund Klas Haakan | Halvledarelement |
| JP2001352070A (ja) * | 2000-04-07 | 2001-12-21 | Denso Corp | 半導体装置およびその製造方法 |
| GB0314390D0 (en) * | 2003-06-20 | 2003-07-23 | Koninkl Philips Electronics Nv | Trench field effect transistor structure |
| JP2005109163A (ja) * | 2003-09-30 | 2005-04-21 | Nec Electronics Corp | 半導体素子 |
| CN100369265C (zh) * | 2005-08-26 | 2008-02-13 | 东南大学 | 三维多栅高压p型横向双扩散金属氧化物半导体管 |
| CN100369264C (zh) * | 2005-08-26 | 2008-02-13 | 东南大学 | 三维多栅高压n型横向双扩散金属氧化物半导体管 |
| DE102005045910B4 (de) * | 2005-09-26 | 2010-11-11 | Infineon Technologies Austria Ag | Laterales SOI-Bauelement mit einem verringerten Einschaltwiderstand |
| US7531888B2 (en) * | 2006-11-30 | 2009-05-12 | Fairchild Semiconductor Corporation | Integrated latch-up free insulated gate bipolar transistor |
| EP1965437A1 (fr) * | 2007-02-28 | 2008-09-03 | K.N. Toosi University of Technology | Dispositif transistor à l'échelle nanométrique doté d'une grande capacité de manipulation du courant |
| KR101019406B1 (ko) | 2008-09-10 | 2011-03-07 | 주식회사 동부하이텍 | Ｌｄｍｏｓ 소자 제조 방법 |
| US20100117153A1 (en) * | 2008-11-07 | 2010-05-13 | Honeywell International Inc. | High voltage soi cmos device and method of manufacture |
| JP2010278188A (ja) * | 2009-05-28 | 2010-12-09 | Renesas Electronics Corp | 半導体集積回路装置 |
| US8236640B2 (en) | 2009-12-18 | 2012-08-07 | Intel Corporation | Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions |
| CN102403321A (zh) * | 2011-09-30 | 2012-04-04 | 上海新傲科技股份有限公司 | 半导体装置及制备方法 |
| KR102016986B1 (ko) * | 2013-01-25 | 2019-09-02 | 삼성전자주식회사 | 엘디모스 트랜지스터 기반의 다이오드 및 이를 포함하는 정전기 방전 보호 회로 |
| CN103887332A (zh) * | 2013-10-15 | 2014-06-25 | 杭州恩能科技有限公司 | 一种新型功率半导体器件 |
| CN104795438B (zh) * | 2015-04-10 | 2017-07-28 | 电子科技大学 | 一种能抑制负阻效应的sa‑ligbt |
| CN105977288B (zh) * | 2016-05-11 | 2020-05-22 | 电子科技大学 | 具有超势垒集电极结构的ligbt器件及其制造方法 |
| CN113690310A (zh) * | 2021-07-14 | 2021-11-23 | 广东美的白色家电技术创新中心有限公司 | Ligbt、制备方法、智能功率模块、驱动电路及电器 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0205635A1 (fr) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Transistor à effet de champ de puissance bidirectionnel à état passant bipolaire |
| US5237186A (en) * | 1987-02-26 | 1993-08-17 | Kabushiki Kaisha Toshiba | Conductivity-modulation metal oxide field effect transistor with single gate structure |
| DD258498A1 (de) * | 1987-03-16 | 1988-07-20 | Ilmenau Tech Hochschule | Gategesteuertes hochspannungsbauelement mit grosser stromergiebigkeit |
| SE460448B (sv) * | 1988-02-29 | 1989-10-09 | Asea Brown Boveri | Dubbelriktad mos-switch |
| DE68926384T2 (de) * | 1988-11-29 | 1996-10-10 | Toshiba Kawasaki Kk | Lateraler Leitfähigkeitsmodulations-MOSFET |
| SE464950B (sv) * | 1989-11-09 | 1991-07-01 | Asea Brown Boveri | Bistabil integrerad halvledarkrets |
| US5246870A (en) * | 1991-02-01 | 1993-09-21 | North American Philips Corporation | Method for making an improved high voltage thin film transistor having a linear doping profile |
| US5362979A (en) * | 1991-02-01 | 1994-11-08 | Philips Electronics North America Corporation | SOI transistor with improved source-high performance |
| EP0497427B1 (fr) * | 1991-02-01 | 1996-04-10 | Koninklijke Philips Electronics N.V. | Dispositif semi-conducteur pour des applications à haute-tension et sa méthode de fabrication |
| DE69225552T2 (de) * | 1991-10-15 | 1999-01-07 | Texas Instruments Inc | Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung |
| US5286995A (en) * | 1992-07-14 | 1994-02-15 | Texas Instruments Incorporated | Isolated resurf LDMOS devices for multiple outputs on one die |
| US5548150A (en) * | 1993-03-10 | 1996-08-20 | Kabushiki Kaisha Toshiba | Field effect transistor |
| US5378912A (en) * | 1993-11-10 | 1995-01-03 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region |
| US5356822A (en) * | 1994-01-21 | 1994-10-18 | Alliedsignal Inc. | Method for making all complementary BiCDMOS devices |
| US5648671A (en) * | 1995-12-13 | 1997-07-15 | U S Philips Corporation | Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile |
| US5710451A (en) * | 1996-04-10 | 1998-01-20 | Philips Electronics North America Corporation | High-voltage lateral MOSFET SOI device having a semiconductor linkup region |
-
1996
- 1996-07-26 SE SE9602880A patent/SE513284C2/sv not_active IP Right Cessation
-
1997
- 1997-07-04 EP EP97933940A patent/EP0958612A2/fr not_active Withdrawn
- 1997-07-04 AU AU37117/97A patent/AU3711797A/en not_active Abandoned
- 1997-07-04 CN CN97198000A patent/CN1130776C/zh not_active Expired - Fee Related
- 1997-07-04 CA CA002261719A patent/CA2261719A1/fr not_active Abandoned
- 1997-07-04 KR KR1019997000636A patent/KR100317458B1/ko not_active IP Right Cessation
- 1997-07-04 JP JP10508731A patent/JP2000516396A/ja not_active Ceased
- 1997-07-04 WO PCT/SE1997/001222 patent/WO1998005075A2/fr active IP Right Grant
- 1997-07-16 TW TW086110090A patent/TW334604B/zh active
- 1997-07-25 US US08/900,110 patent/US5886384A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2261719A1 (fr) | 1998-02-05 |
| WO1998005075A3 (fr) | 1998-03-05 |
| AU3711797A (en) | 1998-02-20 |
| US5886384A (en) | 1999-03-23 |
| WO1998005075A2 (fr) | 1998-02-05 |
| KR100317458B1 (ko) | 2001-12-24 |
| SE9602880D0 (sv) | 1996-07-26 |
| EP0958612A2 (fr) | 1999-11-24 |
| SE9602880L (sv) | 1998-01-27 |
| CN1130776C (zh) | 2003-12-10 |
| TW334604B (en) | 1998-06-21 |
| KR20000029577A (ko) | 2000-05-25 |
| JP2000516396A (ja) | 2000-12-05 |
| CN1231066A (zh) | 1999-10-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |