SE512906C2 - Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav - Google Patents

Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav

Info

Publication number
SE512906C2
SE512906C2 SE9803350A SE9803350A SE512906C2 SE 512906 C2 SE512906 C2 SE 512906C2 SE 9803350 A SE9803350 A SE 9803350A SE 9803350 A SE9803350 A SE 9803350A SE 512906 C2 SE512906 C2 SE 512906C2
Authority
SE
Sweden
Prior art keywords
gold
material composition
capsule
layer
chip
Prior art date
Application number
SE9803350A
Other languages
English (en)
Swedish (sv)
Other versions
SE9803350L (sv
SE9803350D0 (sv
Inventor
Lars-Anders Olofsson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9803350A priority Critical patent/SE512906C2/sv
Publication of SE9803350D0 publication Critical patent/SE9803350D0/xx
Priority to TW087120940A priority patent/TW410537B/zh
Priority to PCT/SE1999/001669 priority patent/WO2000021346A1/en
Priority to JP2000575348A priority patent/JP2002527892A/ja
Priority to ES99970263T priority patent/ES2237207T3/es
Priority to KR1020017003906A priority patent/KR100713114B1/ko
Priority to CNB998117056A priority patent/CN1196389C/zh
Priority to AU11932/00A priority patent/AU1193200A/en
Priority to CA002343823A priority patent/CA2343823A1/en
Priority to DE69923337T priority patent/DE69923337T2/de
Priority to EP99970263A priority patent/EP1121840B1/en
Priority to US09/410,034 priority patent/US6206269B1/en
Publication of SE9803350L publication Critical patent/SE9803350L/xx
Publication of SE512906C2 publication Critical patent/SE512906C2/sv
Priority to US09/610,471 priority patent/US6255002B1/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
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    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/01006—Carbon [C]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
SE9803350A 1998-10-02 1998-10-02 Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav SE512906C2 (sv)

Priority Applications (13)

Application Number Priority Date Filing Date Title
SE9803350A SE512906C2 (sv) 1998-10-02 1998-10-02 Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav
TW087120940A TW410537B (en) 1998-10-02 1998-12-16 Soldering of a semiconductor chip to a substrate
EP99970263A EP1121840B1 (en) 1998-10-02 1999-09-23 Soldering of a semiconductor chip to a substrate
CNB998117056A CN1196389C (zh) 1998-10-02 1999-09-23 半导体芯片与衬底的焊接
JP2000575348A JP2002527892A (ja) 1998-10-02 1999-09-23 基板に半導体チップを半田付けする方法と、この方法によって製造されるデバイス
ES99970263T ES2237207T3 (es) 1998-10-02 1999-09-23 Soldadura de un chip semiconductora a un sustrato.
KR1020017003906A KR100713114B1 (ko) 1998-10-02 1999-09-23 기판에 반도체 칩을 땜납하는 방법 및 장치
PCT/SE1999/001669 WO2000021346A1 (en) 1998-10-02 1999-09-23 Soldering of a semiconductor chip to a substrate
AU11932/00A AU1193200A (en) 1998-10-02 1999-09-23 Soldering of a semiconductor chip to a substrate
CA002343823A CA2343823A1 (en) 1998-10-02 1999-09-23 Soldering of a semiconductor chip to a substrate
DE69923337T DE69923337T2 (de) 1998-10-02 1999-09-23 Löten eines halbleiterchips auf ein substrat
US09/410,034 US6206269B1 (en) 1998-10-02 1999-10-01 Soldering of a semiconductor chip to a substrate
US09/610,471 US6255002B1 (en) 1998-10-02 2000-07-05 Soldering of a semiconductor chip to a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9803350A SE512906C2 (sv) 1998-10-02 1998-10-02 Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav

Publications (3)

Publication Number Publication Date
SE9803350D0 SE9803350D0 (sv) 1998-10-02
SE9803350L SE9803350L (sv) 2000-04-03
SE512906C2 true SE512906C2 (sv) 2000-06-05

Family

ID=20412803

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9803350A SE512906C2 (sv) 1998-10-02 1998-10-02 Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav

Country Status (12)

Country Link
US (2) US6206269B1 (es)
EP (1) EP1121840B1 (es)
JP (1) JP2002527892A (es)
KR (1) KR100713114B1 (es)
CN (1) CN1196389C (es)
AU (1) AU1193200A (es)
CA (1) CA2343823A1 (es)
DE (1) DE69923337T2 (es)
ES (1) ES2237207T3 (es)
SE (1) SE512906C2 (es)
TW (1) TW410537B (es)
WO (1) WO2000021346A1 (es)

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JP2001176999A (ja) * 2000-11-27 2001-06-29 Tanaka Kikinzoku Kogyo Kk 電子部品の気密封止方法
JP3989254B2 (ja) * 2002-01-25 2007-10-10 日本碍子株式会社 異種材料接合体及びその製造方法
CN1445049A (zh) * 2002-03-19 2003-10-01 日本胜利株式会社 焊锡膏、焊接成品及焊接方法
DE10314876B4 (de) 2003-04-01 2008-02-14 Infineon Technologies Ag Verfahren zum mehrstufigen Herstellen von Diffusionslötverbindungen und seine Verwendung für Leistungsbauteile mit Halbleiterchips
JP2005205418A (ja) * 2004-01-20 2005-08-04 Denso Corp 接合構造体の製造方法
US7407083B2 (en) * 2004-08-19 2008-08-05 Thermal Corp. Bonded silicon, components and a method of fabricating the same
DE102005006281B4 (de) * 2005-02-10 2014-07-17 Infineon Technologies Ag Hochfrequenzleistungsbauteil mit Goldbeschichtungen und Verfahren zur Herstellung desselben
US7239517B2 (en) * 2005-04-11 2007-07-03 Intel Corporation Integrated heat spreader and method for using
DE102005024430B4 (de) * 2005-05-24 2009-08-06 Infineon Technologies Ag Verfahren zum Beschichten eines Siliziumwafers oder Siliziumchips
DE102006034600B4 (de) * 2006-07-26 2010-01-14 Infineon Technologies Ag Verfahren zur Herstellung einer Lötverbindung
CN101641785B (zh) * 2006-11-09 2011-07-13 怡得乐Qlp公司 具有延展层的微电路封装体
US20080136019A1 (en) * 2006-12-11 2008-06-12 Johnson Michael E Solder Bump/Under Bump Metallurgy Structure for High Temperature Applications
US8753983B2 (en) * 2010-01-07 2014-06-17 Freescale Semiconductor, Inc. Die bonding a semiconductor device
CN101819076B (zh) * 2010-04-21 2011-07-27 中国电子科技集团公司第二十四研究所 基于金锡共晶的谐振型压力传感器芯片局部真空封装方法
DE102012216546B4 (de) * 2012-09-17 2023-01-19 Infineon Technologies Ag Verfahren zum verlöten eines halbleiterchips mit einem träger
WO2016184750A1 (en) * 2015-05-21 2016-11-24 Basf Se Glass-ceramic electrolytes for lithium-sulfur batteries
CN105244755B (zh) * 2015-10-24 2018-04-03 长沙青波光电科技有限公司 半导体激光单管芯片封装方法
CN106825825B (zh) * 2017-03-26 2018-11-13 中国电子科技集团公司第十六研究所 一种用于微波毫米波器件组装的高焊透率焊接方法
TWI703646B (zh) * 2019-05-09 2020-09-01 樂鑫材料科技股份有限公司 背晶薄膜結構、包含其之功率模組封裝體、及背晶薄膜結構的製造方法

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TW410537B (en) 2000-11-01
EP1121840A1 (en) 2001-08-08
DE69923337T2 (de) 2006-04-06
WO2000021346A1 (en) 2000-04-13
US6206269B1 (en) 2001-03-27
US6255002B1 (en) 2001-07-03
EP1121840B1 (en) 2005-01-19
DE69923337D1 (de) 2005-02-24
JP2002527892A (ja) 2002-08-27
ES2237207T3 (es) 2005-07-16
CN1321409A (zh) 2001-11-07
AU1193200A (en) 2000-04-26
CA2343823A1 (en) 2000-04-13
KR20010073192A (ko) 2001-07-31
SE9803350L (sv) 2000-04-03
KR100713114B1 (ko) 2007-05-02
SE9803350D0 (sv) 1998-10-02
CN1196389C (zh) 2005-04-06

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