CN1196389C - 半导体芯片与衬底的焊接 - Google Patents

半导体芯片与衬底的焊接 Download PDF

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CN1196389C
CN1196389C CNB998117056A CN99811705A CN1196389C CN 1196389 C CN1196389 C CN 1196389C CN B998117056 A CNB998117056 A CN B998117056A CN 99811705 A CN99811705 A CN 99811705A CN 1196389 C CN1196389 C CN 1196389C
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L·－A·奥洛夫松
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Infineon Technologies AG
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Abstract

本发明涉及到一种将半导体芯片焊接到诸如射频功率晶体管中的封壳之类的衬底的方法。半导体芯片被提供有由第一材料组合物组成的粘合层。由第二材料组合物组成的可焊接层被排列在此粘合层上。由第三材料组合物组成的抗氧化层被排列在可焊接层上。用金-锡焊料层涂敷抗氧化层。芯片经由金-锡焊料被置于可焊接的封壳表面上。封壳和芯片被暴露于引进了还原气体的惰性气氛，在金-锡焊料被加热到其熔点以上的温度的情况下，使封壳和芯片处于明显低于大气压的压力。在金-锡焊料被熔化的情况下，提高气压，并在超过预定气压时降低温度，使金-锡焊料凝固。

Description

半导体芯片与衬底的焊接
发明的领域
本发明一般涉及到一种方法以及用半导体芯片与衬底的所述焊接方法生产的器件，更确切地说是涉及到将所述半导体芯片焊接到射频功率晶体管中的封壳的方法。
发明的背景
目前，芯片是采用易熔金-硅的焊接工艺被安装在射频功率晶体管和射频功率模块中的。所用的封壳常常是被镍和比较厚的金层(2-5μm)合金化的。待要安置在封壳中的芯片(晶体管、电阻器和电容器)的底部表面上提供有非常薄的金。此金层的作用是防止芯片底部表面被氧化。当使用金-硅时，封壳被加热到温度为400-450℃，然后将芯片分别置于封壳上，并来回摩擦，直至在芯片中的硅与封壳上的金之间形成合金。要确定何时开始形成合金是不可能的。因此，工艺中的这一步骤通常是手工进行的，以便操作人员能够观察何时形成了合金以及何时达到了有效的焊接。
虽然在这一焊接工艺中，封壳(芯片下方)上的全部金被消耗了，但芯片中仍然剩余了大量的硅。这些剩余的硅能够迁移进入熔融的AuSi合金中，并以硅晶体的形式沉淀出来。在提高了的温度下以及用力机械摩擦时，这一过程被加速。因此，由于过量的硅晶体会集中在熔融的Au-Si合金中，故不适合于或不可能用机械方式或用超声来实现这一摩擦过程。熔融合金中过量硅晶体的缺点是熔体获得了粘滞稠度，从而不向外流动和有效地润湿表面。
这些硅晶体将有效地包封可能已经形成在芯片与封壳之间的任何气泡。这种气泡极大地降低了芯片与封壳之间的热导率。由封壳上的金和芯片中的硅形成的AuSi合金结的总厚度绝对不能大于金厚度的大约50％。这样，当金的厚度约为4μm时，结的厚度将仅仅为大约6μm。这就对封壳的表面平整度即光滑性有高的要求，因为否则的话，芯片与封壳之间就可能出现焊料不足。
通常都知道，能够以预制的方式在芯片与封壳之间涂敷额外的AuSi焊料。由于这种预制的尺寸小，故要做到这一点常常是非常困难而昂贵的。要加工材料厚度小于大约25μm的预制件，实际上是不可能的。然而，这种厚度的结会使芯片与封壳之间的热阻提高到不可接受的程度。
发明的概述
半导体与衬底例如射频功率晶体管中的封壳的已知焊接技术的一个问题是，焊接过程在各个芯片本身的焊接中要求手工加工步骤。
已知技术的另一问题是，硅晶体的形成阻碍了焊料的流动，从而导致气泡被夹裹。这些气泡易于阻碍热从芯片传输出去。
已知技术的又一问题是，SiAu的高的凝固温度导致芯片与封壳之间高的机械应力，从而对芯片的尺寸设置了上限。若超过这一限度，芯片将会破裂。
已知技术的再一问题是，为了防止机械应力使芯片破裂，必须代之以安装几个小的芯片，从而增加了这方面的成本。
已知技术的另一问题是，安装芯片时的高的工作温度(400-450℃)意味着原子能够从金层下方的镍层向上扩散穿过所述金并被氧化，从而引起键合和焊接问题。这个问题必须用特殊的镀镍技术和表面上的厚金层来抵消，而对于AuSi焊接目的来讲，实际上不需要厚的金属。
已知技术的另一问题是，芯片安装过程招致的高的工作温度，意味着实际封壳的各个零件必须在790℃下与熔点更高的硬焊料即含铜高的焊料例如AgCu结合在一起。由于适合于本文的那些金属和陶瓷不具有彼此相同的热膨胀系数，故金属与陶瓷在这样高的温度下结合，在结冷却之后会引起高的机械应力。这就限制了封壳的设计。例如，不可能在封壳中采用最佳的金属铜和陶瓷AlN，因为这些材料的膨胀系数彼此差异太大了。
已知技术的另一问题是，形成的比较薄的焊料连结对封壳的表面平整度有很高的要求，因为否则的话会出现焊料不足，导致不是所有的芯片被有效地焊接。这极大地降低了芯片与封壳之间的热导率。
本发明借助于提供一种将半导体芯片焊接到诸如射频功率晶体管中的封壳之类的衬底的方法，来处置这些问题。半导体芯片首先被提供有由第一材料组合物组成的粘合层。然后在此粘合层上排列由第二材料组合物组成的可焊接层。再在可焊接层上排列由第三材料组合物组成的抗氧化层。由金-锡合金组成的焊料层然后被涂敷在抗氧化层上。芯片经由所述金-锡焊料被置于可焊接的封壳表面上。封壳和芯片被暴露于加有还原气体的惰性气氛，在将焊料中的金-锡合金加热到其熔点以上的温度的过程中，使封壳和芯片处于明显低于大气压的压力。在金-锡焊料处于熔融状态的情况下，提高气压，并在超过预定气压时降低温度，使金-锡合金固化。
根据本发明方法的一个优选实施方案，第一材料组合物是钛-钨组合物(TiW)，第二材料组合物是镍(Ni)，而第三材料组合物是金(Au)。
在本发明方法的另一个优选实施方案中，第一材料组合物是钛(Ti)，第二材料组合物是铂(Pt)，而第三材料组合物是金(Au)。
根据本发明方法的另一优选实施方案，金-锡焊料组合物被来自封壳的金补偿，致使最终的合金组合物尽可能靠近共晶熔点。
在本发明方法的另一优选实施方案中，焊料中的金-锡合金为由75％的金和25％的锡组成的组合物，而在其上欲焊接芯片的封壳包含3-4μm厚的金层。
根据本发明方法的再一优选实施方案，还原气体是气态甲酸。
在根据本发明的射频功率晶体管的一个实施方案中，晶体管包括至少一个射频功率半导体芯片和封壳。半导体芯片配备有由第一材料组合物组成的粘合层、排列在所述粘合层上的由第二材料组合物组成的可焊接层、以及排列在所述可焊接层上的由第三材料组合物组成的抗氧化层。芯片经由含有其合金组合物靠近共晶熔点的金-锡合金的焊料，被排列在可焊接封壳表面上。
本发明的目的是为了能够在半导体芯片与诸如射频晶体管中的封壳之类的衬底之间获得无气孔的焊料连结，例如，在连结处希望有低的焊料凝固温度，它使氮化铝能够被用作某些类型封壳中的陶瓷绝缘体来代替剧毒的氧化钡。
本发明提供的一个优点是，从定位芯片的步骤到将芯片牢固地焊接于封壳的步骤的整个过程能够自动化。
本发明提供的另一个优点是，能够精确地确定焊料连结的厚度，以适应封壳的曲度并尽可能减小焊料连结的热阻。
本发明提供的再一个优点是，焊料连结中的金-锡合金的热导率是金-硅合金组成的焊料连结的热导率的大约2倍。
本发明提供的另一个优点是，比较低的焊接温度使镍通过金扩散的危险降低到了最小。因此，封壳上的金的厚度能够从3-5μm减小到金属丝键合所需的0.5-1μm。除了降低成本之外，这一较薄的金涂层还大幅度地降低了由金对锡-铅焊料的沾污所造成的封壳与印刷电路板之间焊料连结不良的危险。还可以在待要焊接到印刷电路板上的连接片零件上，选择性地镀敷非常薄的金层。
本发明提供的再一个优点是，金-锡焊接过程是一种批量处理，这使得能够同时加工大量封壳。对于能够以阵列的形式处理的那种封壳，由于制造成本被大幅度降低，这是特别有利的。
本发明提供的另一个优点是，使用由金-锡合金组成的焊料的焊接过程，在仅仅约为300℃的温度下进行，从而能够根本改变制造实际封壳的方法。目前封壳零件在790℃下的硬焊接即含铜多的焊接能够代之以温度低得多的焊接工艺，例如在380℃下用含有金-硅合金的焊料来焊接。后一工艺导致在封壳中的陶瓷与金属之间小得多的热力学应力，从而能够使用诸如铜和氮化铝之类的热匹配性质更差的材料，例如来获得诸如改进了的热导率和无毒性的好处。
下面将参照其示例性优选实施方案和附图来更详细地描述本发明。
优选实施方案的详细描述
金-锡焊接需要在衬底和半导体芯片二者上有可焊接的表面。对于半导体芯片来说，借助于用可能是例如硅的半导体上的粘合层的方式来涂敷已经在其它情况下被最终加工过的半导体芯片而达到了这一要求。可焊接层被置于粘合层上，并在所述可焊接层上排列抗氧化层。此粘合层可以例如包含TiW(钛-钨)，同时，可焊接层可以包含Ni(镍)，而抗氧化层可以包含Au(金)。粘合层也可以由纯钛组成，在这种情况下，可焊接层可以由铂组成，而抗氧化层可以由金组成。
粘合层的厚度可以在1000-1500的范围，而可焊接层的厚度可以在1000-1500的范围，抗氧化层的厚度可以在5000-10000的范围。厚的金-锡焊料合金被涂敷到抗氧化层或与涂敷所述抗氧化层同时进行。这确保了每个芯片都有金属焊料，从而无须处理焊料预制件。
可以以很多不同的方式来涂敷金-锡焊料，例如借助于选择性镀敷、利用模板印刷或丝网印刷方法以焊料胶的形式淀积。焊料最好被溅射或镀敷在半导体芯片的背面上，或者，可以借助于将非常薄的金锡箔融化，或借助于热压焊键合，将所述箔固定到所述半导体芯片的背面。
由于其中待要放置一个或多个芯片的封壳不绝对平坦，故所使用的焊料量必需合适，以便确保芯片与封壳之间的空间总是充满金-锡焊料。在例如芯片长度为5mm的情况下以及在5％封壳的情况下，要求10μm的金-锡厚度。
金涂层总是在安装芯片的封壳上。如果焊料原先有准确地处于共晶熔点的合金组合物，则此金将与金-锡焊料形成合金，从而提高熔点。为了避免这一点，用考虑了来自封壳的金而确定其组分的金-锡合金来涂敷芯片。例如，适当的组合物可以是含有3-4μm金的封壳上的75％的金和25％的锡。这就得到非常靠近共晶熔点280℃的最终组合物。
当把芯片焊接到封壳上时，在焊料连结处常常形成气泡。由于这种气泡的出现受到焊料如何润湿二个焊接表面的控制，故不可能防止这种气泡的形成。这些气泡对诸如射频功率晶体管之类的大功率元件中的焊料连结非常有害，因为它们引起元件过热。借助于在尽可能最低例如1-10乇的气体压力下进行焊接，可以使这一问题减至最小。当焊接完成时，在冷却元件之前，提高焊料连结上的环境压力，例如提高到正常大气压，使焊料凝固。在焊料熔化过程中已经形成的任何气泡将因此而被压缩，从而变成实际上无害。这种气泡的体积将相对于压力差而被减小，而在上述压力差的情况下，气泡的体积将被减小大约100倍。
所述的金-锡合金容易被氧化，且氧化物(氧化锡)妨碍焊料的满意润湿和流动。由于常规焊药在所考虑的焊接温度(300-350℃)下导致不容易溶解的分解产物，故在焊接操作中使用常规焊药是不适当的。而且，要清洗掉焊药残留物是非常困难、不实际又昂贵的。因此，在焊接工艺中可以使用气态焊药。在目前的情况下，使用了少量的加入了惰性气体的甲酸蒸汽。所用的惰性气体可以是例如氮气。氮气在被输送到进行焊接的工作室之前，可以通过含有甲酸的容器。氮气于是将甲酸分子携带进入工作室。甲酸蒸汽使锡的氧化物还原以提供金属态锡以及其它气态产物。这就无须在所述焊接操作之后对元件进行清洗。
可以理解的是，本发明不局限于其上述的示例性实施方案，而是可以在下列权利要求的范围内作出修正。

Claims (6)

1.一种将半导体芯片焊接到衬底的方法，其特征是
用由第一材料组合物组成的粘合层涂敷半导体芯片；
用由第二材料组合物组成的可焊接层覆盖粘合层；
用由第三材料组合物组成的抗氧化层覆盖所述可焊接层；
用金-锡焊料层覆盖抗氧化层；
将芯片经由所述金-锡焊料置于衬底的可焊接表面上；
将衬底和芯片暴露于其中引进了还原气体的惰性环境，并使所述衬底和芯片处于低于大气压的压力，同时将金-锡焊料加热到高于其熔点温度的温度；
在金-锡焊料被熔化的情况下，提高气体压力；以及
当超过预定气体压力时，降低温度，使金-锡焊料凝固。
2.根据权利要求1的方法，其特征是第一材料组合物包含钛-钨(TiW)，第二材料组合物包含镍(Ni)，而第三材料组合物包含金(Au)。
3.根据权利要求1的方法，其特征是第一材料组合物由钛(Ti)组成，第二材料组合物由铂(Pt)组成，而第三材料组合物由金(Au)组成。
4.根据权利要求1的方法，其特征是金-锡焊料的组分适应于来自衬底的金的补偿，致使得到具有共晶熔点或靠近所述共晶熔点的熔点的最终合金组合物。
5.根据权利要求4的方法，其特征是当衬底包括厚度为3-4μm的金层时，金-锡焊料包含75％的金和25％的锡。
6.根据权利要求1的方法，其特征是还原气体是气态甲酸。
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