RU2276159C2 - Фторированный ароматический полимер и его применение - Google Patents

Фторированный ароматический полимер и его применение Download PDF

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Publication number
RU2276159C2
RU2276159C2 RU2004103979/04A RU2004103979A RU2276159C2 RU 2276159 C2 RU2276159 C2 RU 2276159C2 RU 2004103979/04 A RU2004103979/04 A RU 2004103979/04A RU 2004103979 A RU2004103979 A RU 2004103979A RU 2276159 C2 RU2276159 C2 RU 2276159C2
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RU
Russia
Prior art keywords
compound
fap
fluorinated aromatic
formula
aromatic compound
Prior art date
Application number
RU2004103979/04A
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English (en)
Russian (ru)
Other versions
RU2004103979A (ru
Inventor
Сунсуке ЁКОЦУКА (JP)
Сунсуке ЁКОЦУКА
Фусааки ТАКЕО (JP)
Фусааки ТАКЕО
Original Assignee
Асахи Гласс Компани, Лимитед
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Publication of RU2004103979A publication Critical patent/RU2004103979A/ru
Application granted granted Critical
Publication of RU2276159C2 publication Critical patent/RU2276159C2/ru

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C08G65/40—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/10—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
    • H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/034—Organic insulating material consisting of one material containing halogen
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Organic Insulating Materials (AREA)
RU2004103979/04A 2001-07-12 2002-06-28 Фторированный ароматический полимер и его применение RU2276159C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001212379 2001-07-12
JP2001-212379 2001-07-12

Publications (2)

Publication Number Publication Date
RU2004103979A RU2004103979A (ru) 2005-04-10
RU2276159C2 true RU2276159C2 (ru) 2006-05-10

Family

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RU2004103979/04A RU2276159C2 (ru) 2001-07-12 2002-06-28 Фторированный ароматический полимер и его применение

Country Status (8)

Country Link
US (1) US6881811B2 (fr)
JP (1) JP4206925B2 (fr)
KR (1) KR100870225B1 (fr)
CN (1) CN100519623C (fr)
DE (1) DE10297034B4 (fr)
RU (1) RU2276159C2 (fr)
TW (1) TWI237039B (fr)
WO (1) WO2003008483A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
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RU2526683C2 (ru) * 2009-06-26 2014-08-27 ТАЙКО ЭЛЕКТРОНИКС Ю-КЕЙ ЛТД, Великобритания Высокоэффективная, высокотемпературная легкая пленка, лента или кожух для изоляции проводов

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JP2004356582A (ja) * 2003-05-30 2004-12-16 Asahi Glass Co Ltd 積層体
JP4501391B2 (ja) * 2003-09-30 2010-07-14 旭硝子株式会社 架橋性含フッ素芳香族プレポリマー及びその用途
CN101203546B (zh) * 2005-06-24 2012-02-01 旭硝子株式会社 交联性含氟芳香族预聚物及其用途
JP4730436B2 (ja) * 2006-03-16 2011-07-20 旭硝子株式会社 ネガ型感光性含フッ素芳香族系樹脂組成物
ATE518901T1 (de) 2006-06-02 2011-08-15 Asahi Glass Co Ltd Vernetzbares prepolymer, herstellungsverfahren dafür und verwendung davon
JP5181444B2 (ja) * 2006-08-31 2013-04-10 旭硝子株式会社 架橋性含フッ素芳香族プレポリマーおよびその硬化物
JP2009026810A (ja) * 2007-07-17 2009-02-05 Asahi Glass Co Ltd パターン形成方法
JP5245378B2 (ja) * 2007-11-30 2013-07-24 旭硝子株式会社 架橋性プレポリマー、その製造方法および用途
WO2009154254A1 (fr) 2008-06-19 2009-12-23 旭硝子株式会社 Composition durcissable et film durci l’utilisant
US8492507B2 (en) * 2008-09-23 2013-07-23 Nexam Chemical Ab Acetylenic polyamide
KR101558536B1 (ko) * 2008-12-16 2015-10-08 삼성전자주식회사 하이퍼브랜치 폴리머, 이를 포함하는 연료전지용 전극, 이를 포함하는 연료전지용 전해질막 및 이를 채용한 연료전지
CN102301264A (zh) 2009-03-18 2011-12-28 旭硝子株式会社 光波导
EP2473538B1 (fr) 2009-08-31 2017-07-26 Dow Global Technologies LLC Catalyseur et procédé de polymérisation d'une oléfine et polyoléfine préparée grâce à ce procédé
CN102892800B (zh) 2010-05-14 2015-05-13 聂克斯姆化学有限公司 交联催化
CN102947359B (zh) 2010-06-23 2014-12-24 旭硝子株式会社 固化性组合物和固化膜的制造方法
CN103946326A (zh) * 2011-11-18 2014-07-23 旭硝子株式会社 固化性组合物、涂布用组合物、固化膜、激光加工方法及多层布线结构体的制造方法
RU2497319C1 (ru) * 2012-02-28 2013-10-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "Высшая школа экономики" Печатная плата для бортовой радиоэлектронной аппаратуры космических аппаратов

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2526683C2 (ru) * 2009-06-26 2014-08-27 ТАЙКО ЭЛЕКТРОНИКС Ю-КЕЙ ЛТД, Великобритания Высокоэффективная, высокотемпературная легкая пленка, лента или кожух для изоляции проводов

Also Published As

Publication number Publication date
RU2004103979A (ru) 2005-04-10
WO2003008483A1 (fr) 2003-01-30
US20040147710A1 (en) 2004-07-29
TWI237039B (en) 2005-08-01
CN100519623C (zh) 2009-07-29
CN1525988A (zh) 2004-09-01
JPWO2003008483A1 (ja) 2004-11-11
KR100870225B1 (ko) 2008-11-24
KR20040027518A (ko) 2004-04-01
DE10297034T5 (de) 2004-07-29
US6881811B2 (en) 2005-04-19
JP4206925B2 (ja) 2009-01-14
DE10297034B4 (de) 2015-05-21

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Effective date: 20150629