RU2004102519A - Способ получения низкодиэлектрических пленок - Google Patents

Способ получения низкодиэлектрических пленок Download PDF

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RU2004102519A
RU2004102519A RU2004102519/28A RU2004102519A RU2004102519A RU 2004102519 A RU2004102519 A RU 2004102519A RU 2004102519/28 A RU2004102519/28 A RU 2004102519/28A RU 2004102519 A RU2004102519 A RU 2004102519A RU 2004102519 A RU2004102519 A RU 2004102519A
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organosilicate compound
tetramethylcyclotetrasiloxane
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Си-Воо РЕЕ (KR)
Си-Воо РЕЕ
Санг-Ки КВАК (KR)
Санг-Ки КВАК
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Поустек Фаундейшн (Kr)
Поустек Фаундейшн
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Claims (11)

1. Способ получения пленки гидрированного кремний-оксикарбида (SiCO:H) c низкой диэлектрической постоянной, включающий проведение химического осаждения из паровой фазы с использованием, вместе с плазмой О2-содержащего газа, кремнийорганического или органосиликатного соединения, имеющего, по меньшей мере, одну винильную или этинильную группу, или смеси насыщенного кремнийорганического или органосиликатного соединения и алифатически ненасыщенного углеводорода.
2. Способ по п.1, в котором смесь насыщенного кремнийорганического или органосиликатного соединения и алифатически ненасыщенного углеводорода имеет соотношение смешения от 1:0,1 до 1:10.
3. Способ по п.1, в котором кремнийорганическое или органосиликатное соединение, имеющее, по меньшей мере, одну винильную или этинильную группу, выбирают из группы, состоящей из винилтриметилсилана, винилтриэтилсилана, винилтриметоксисилана, винилтриэтоксисилана, 1,3,5-тривинил-1,3,5-триметилциклотрисилоксана, 1,3,5,7-тетравинил-1,3,5,7-тетраметилциклотетрасилоксана, 1,3-дивинилтетраметилдисилоксана, гексавинилдисилоксана, аллилдиметилсилана, аллилдиметоксисилана, этинилтриметилсилана, этинилтриэтилсилана и их смеси.
4. Способ по п.3, в котором кремнийорганическое или органосиликатное соединение, имеющее, по меньшей мере, одну винильную или этинильную группу, выбирают из группы, состоящей из винилтриметилсилана, 1,3,5,7-тетравинил-1,3,5,7-тетраметилциклотетрасилоксана, аллилдиметилсилана, 1,3-дивинилтетраметилдисилоксана, винилтриметоксисилана и этинилтриметилсилана.
5. Способ по п.1, в котором насыщенное кремнийорганическое или органосиликатное соединение выбирают из группы, состоящей из триметилсилана, триэтилсилана, триметоксисилана, триэтоксисилана, тетраметилсилана, тетраэтилсилана, тетраметоксисилана, тетраэтоксисилана, гексаметилциклотрисилоксана, тетраметилциклотетрасилоксана, тетраэтилциклотетрасилоксана, октаметилциклотетрасилоксана, гексаметилдисилоксана, бис-триметилсилилметана, винилтриметилсилана, винилтриэтилсилана, винилтриметоксисилана, винилтриэтоксисилана, 1,3,5-тривинил-1,3,5-триметилциклотрисилоксана, 1,3,5,7-тетравинил-1,3,5,7-тетраметилциклотетрасилоксана, 1,3-дивинилтетраметилдисилоксана, гексавинилдисилоксана, аллилдиметилсилана, аллилдиметоксисилана, этинилтриметилсилана, этинилтриэтилсилана и их смеси.
6. Способ по п.5, в котором насыщенное кремнийорганическое или органосиликатное соединение выбирают из группы, состоящей из тетраметилсилана, гексаметилдисилоксана и тетраметилциклотетрасилоксана.
7. Способ по п.1, в котором алифатически ненасыщенный углеводород выбирают из группы, состоящей из H2C=CH2, F2C=CF2, H2C=CF2, HFC=CFH, F2C=C=CF2, H2C=C=CF2, HFC=C=CFH, HC≡CH, FC≡CH, FC≡CF, Cl2C=CCl2, H2C=CCl2, HClC=CClH, Cl2C=C=CCl2, H2C=C=CCl2, HClC=C=CClH, ClC≡CH, ClC≡CCl, Br2C=CBr2, H2C=CBr2, HBrC=CBrH, Br2C=C=CBr2, H2C=C=CBr2, HBrC=C=CBrH, BrC≡CH, BrC≡CBr, I2C=CI2, H2C=CI2, HIC=CIH, I2C=C=CI2, H2C=C=CI2, HIC=C=CIH, IC≡CH и IC≡CI.
8. Способ по п.7, в котором алифатически ненасыщенным углеводородом является Н2С=СН2 или F2C=CF2.
9. Способ по п.1, в котором О2-содержащий газ выбирают из группы, состоящей из О2, N2O, O3, H2O2, CO2, H2O и их смеси.
10. Способ по п.1, дополнительно включающий стадию отжига осажденной пленки при температуре в интервале от 100 до 500°C в течение 0,5-8 ч.
11. Пленка из гидрированного кремний-оксикарбида (SiCO:H) с низкой диэлектрической постоянной, полученная способом по п.1.
RU2004102519/28A 2001-06-29 2002-06-28 Пленка гидрированного кремний-оксикарбида (sico:h) и способ ее получения RU2264675C2 (ru)

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