JP3828540B2 - 低誘電常数薄膜の製造方法及び水素化されたシリコンオキシカーバイド(SiCO:H)薄膜 - Google Patents
低誘電常数薄膜の製造方法及び水素化されたシリコンオキシカーバイド(SiCO:H)薄膜 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 124
- 238000004519 manufacturing process Methods 0.000 title description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 5
- 229920002554 vinyl polymer Polymers 0.000 claims description 5
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 claims description 3
- CWMFRHBXRUITQE-UHFFFAOYSA-N trimethylsilylacetylene Chemical compound C[Si](C)(C)C#C CWMFRHBXRUITQE-UHFFFAOYSA-N 0.000 claims description 3
- ZBMGMUODZNQAQI-UHFFFAOYSA-N dimethyl(prop-2-enyl)silicon Chemical compound C[Si](C)CC=C ZBMGMUODZNQAQI-UHFFFAOYSA-N 0.000 claims description 2
- HBWGDHDXAMFADB-UHFFFAOYSA-N ethenyl(triethyl)silane Chemical compound CC[Si](CC)(CC)C=C HBWGDHDXAMFADB-UHFFFAOYSA-N 0.000 claims description 2
- FWSPXZXVNVQHIF-UHFFFAOYSA-N triethyl(ethynyl)silane Chemical compound CC[Si](CC)(CC)C#C FWSPXZXVNVQHIF-UHFFFAOYSA-N 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 39
- 229910052799 carbon Inorganic materials 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000012686 silicon precursor Substances 0.000 description 3
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 3
- KOJCPAMHGPVAEW-UHFFFAOYSA-N 2,4,6,8-tetraethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound CC[SiH]1O[SiH](CC)O[SiH](CC)O[SiH](CC)O1 KOJCPAMHGPVAEW-UHFFFAOYSA-N 0.000 description 2
- VMAWODUEPLAHOE-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[Si]1(C)O[Si](C)(C=C)O[Si](C)(C=C)O[Si](C)(C=C)O1 VMAWODUEPLAHOE-UHFFFAOYSA-N 0.000 description 2
- 229910003923 SiC 4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- -1 silicate compound Chemical class 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical compound CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 description 2
- XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IBWXKMBLEOLOLY-UHFFFAOYSA-N dimethoxy(prop-2-enyl)silicon Chemical compound CO[Si](OC)CC=C IBWXKMBLEOLOLY-UHFFFAOYSA-N 0.000 description 1
- ZDSFBVVBFMKMRF-UHFFFAOYSA-N dimethyl-bis(prop-2-enyl)silane Chemical compound C=CC[Si](C)(C)CC=C ZDSFBVVBFMKMRF-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- IGJPWUZGPMLVDT-UHFFFAOYSA-N tris(ethenyl)-tris(ethenyl)silyloxysilane Chemical compound C=C[Si](C=C)(C=C)O[Si](C=C)(C=C)C=C IGJPWUZGPMLVDT-UHFFFAOYSA-N 0.000 description 1
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Description
図1bに示されたダイレクトプラズマ装置で、ビニルトリメチルシラン(VTMS,SiC5H12)及びO2を用いてPt基板上にSiCOH薄膜を蒸着した。薄膜蒸着の間にO2/VTMSの流量比は1〜13.3の範囲で変えた。反応器内の圧力及び温度はそれぞれ1mmHg及び30℃であり、加えられたプラズマパワーは60Wであった。このようにして蒸着された薄膜をAr雰囲気下で300〜500℃の温度範囲で熱処理して低誘電常数を有する薄膜を得た。
VTMSの代わりにテトラメチルシラン(4MS,SiC4H12)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た。図3に示されたように、このようにして得られた薄膜の誘電常数は3.0〜3.5であり、この値は実施例1によって得られた薄膜の誘電常数より高い。
VTMSの代わりにテトラメチルシラン(4MS、SiC4H12)とC2F4との混合物(1:1)を用いたことを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにテトラビニルテトラメチルシクロテトラシロキサン(TVTMCTSO,Si4O4C12H24)を用いたことを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにテトラメチルシクロテトラシロキサン(TMCTSO,Si4O4C4H16)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た。図11に示したように、このようにして得られた薄膜の誘電常数は2.5〜3.3であり、この値は実施例3によって得られた薄膜の誘電常数より高い。
VTMSの代わりにテトラメチルシクロテトラシロキサン(TMCTSO,Si4O4C4H16)とC2H4との混合物(1:1)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにジアリルジメチルシラン(DADMS,SiC8H16)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりに1,3−ジビニルテトラメチルジシロキサン(DVTMDSO,Si2OC8H18)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにビニルトリメトキシシラン(VTMOS,SiO3C5H12)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにエチニルトリメチルシラン(ETMS,SiC5H10)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにヘキサメチルジシロキサン(HMDSO,Si2OC6H18)とC2H4との混合物(1:2)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
Claims (4)
- 酸素含有気体プラズマと共に、少なくとも一つのビニルまたはエチニル基を有するビニルトリメチルシラン、ビニルトリエチルシラン、アリルジメチルシラン、エチニルトリメチルシラン、エチニルトリエチルシラン及びこれらの混合物からなる群から選択される化合物を用いて化学蒸着を行うことを含む、低誘電常数を有する水素化されたシリコンオキシカーバイド(SiCO:H)薄膜を製造する方法。
- 酸素含有気体がO2,N2O,O3,H2O2,CO2,H2O及びこれらの混合物からなる群から選択されることを特徴とする、請求項1に記載の方法。
- 薄膜を化学蒸着した後、薄膜を100〜500℃範囲の温度で0.5〜8時間熱処理することを特徴とする、請求項1に記載の方法。
- 請求項1に記載の方法により製造された低誘電常数を有する水素化されたシリコンオキシカーバイド(SiCO:H)薄膜。
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