JP3828540B2 - 低誘電常数薄膜の製造方法及び水素化されたシリコンオキシカーバイド(SiCO:H)薄膜 - Google Patents
低誘電常数薄膜の製造方法及び水素化されたシリコンオキシカーバイド(SiCO:H)薄膜 Download PDFInfo
- Publication number
- JP3828540B2 JP3828540B2 JP2003511297A JP2003511297A JP3828540B2 JP 3828540 B2 JP3828540 B2 JP 3828540B2 JP 2003511297 A JP2003511297 A JP 2003511297A JP 2003511297 A JP2003511297 A JP 2003511297A JP 3828540 B2 JP3828540 B2 JP 3828540B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dielectric constant
- heat
- treated
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
Description
図1bに示されたダイレクトプラズマ装置で、ビニルトリメチルシラン(VTMS,SiC5H12)及びO2を用いてPt基板上にSiCOH薄膜を蒸着した。薄膜蒸着の間にO2/VTMSの流量比は1〜13.3の範囲で変えた。反応器内の圧力及び温度はそれぞれ1mmHg及び30℃であり、加えられたプラズマパワーは60Wであった。このようにして蒸着された薄膜をAr雰囲気下で300〜500℃の温度範囲で熱処理して低誘電常数を有する薄膜を得た。
VTMSの代わりにテトラメチルシラン(4MS,SiC4H12)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た。図3に示されたように、このようにして得られた薄膜の誘電常数は3.0〜3.5であり、この値は実施例1によって得られた薄膜の誘電常数より高い。
VTMSの代わりにテトラメチルシラン(4MS、SiC4H12)とC2F4との混合物(1:1)を用いたことを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにテトラビニルテトラメチルシクロテトラシロキサン(TVTMCTSO,Si4O4C12H24)を用いたことを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにテトラメチルシクロテトラシロキサン(TMCTSO,Si4O4C4H16)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た。図11に示したように、このようにして得られた薄膜の誘電常数は2.5〜3.3であり、この値は実施例3によって得られた薄膜の誘電常数より高い。
VTMSの代わりにテトラメチルシクロテトラシロキサン(TMCTSO,Si4O4C4H16)とC2H4との混合物(1:1)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにジアリルジメチルシラン(DADMS,SiC8H16)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりに1,3−ジビニルテトラメチルジシロキサン(DVTMDSO,Si2OC8H18)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにビニルトリメトキシシラン(VTMOS,SiO3C5H12)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにエチニルトリメチルシラン(ETMS,SiC5H10)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
VTMSの代わりにヘキサメチルジシロキサン(HMDSO,Si2OC6H18)とC2H4との混合物(1:2)を用いることを除いては、実施例1と同様な工程を行って蒸着された薄膜を得た後、これを熱処理した。
Claims (4)
- 酸素含有気体プラズマと共に、少なくとも一つのビニルまたはエチニル基を有するビニルトリメチルシラン、ビニルトリエチルシラン、アリルジメチルシラン、エチニルトリメチルシラン、エチニルトリエチルシラン及びこれらの混合物からなる群から選択される化合物を用いて化学蒸着を行うことを含む、低誘電常数を有する水素化されたシリコンオキシカーバイド(SiCO:H)薄膜を製造する方法。
- 酸素含有気体がO2,N2O,O3,H2O2,CO2,H2O及びこれらの混合物からなる群から選択されることを特徴とする、請求項1に記載の方法。
- 薄膜を化学蒸着した後、薄膜を100〜500℃範囲の温度で0.5〜8時間熱処理することを特徴とする、請求項1に記載の方法。
- 請求項1に記載の方法により製造された低誘電常数を有する水素化されたシリコンオキシカーバイド(SiCO:H)薄膜。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20010038050 | 2001-06-29 | ||
PCT/KR2002/001238 WO2003005429A1 (en) | 2001-06-29 | 2002-06-28 | Method for preparing low dielectric films |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004534400A JP2004534400A (ja) | 2004-11-11 |
JP3828540B2 true JP3828540B2 (ja) | 2006-10-04 |
Family
ID=19711521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003511297A Expired - Fee Related JP3828540B2 (ja) | 2001-06-29 | 2002-06-28 | 低誘電常数薄膜の製造方法及び水素化されたシリコンオキシカーバイド(SiCO:H)薄膜 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7087271B2 (ja) |
EP (1) | EP1399955A1 (ja) |
JP (1) | JP3828540B2 (ja) |
KR (1) | KR20030002993A (ja) |
CN (1) | CN1277290C (ja) |
RU (1) | RU2264675C2 (ja) |
TW (1) | TW571350B (ja) |
WO (1) | WO2003005429A1 (ja) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6936309B2 (en) * | 2002-04-02 | 2005-08-30 | Applied Materials, Inc. | Hardness improvement of silicon carboxy films |
US20030194495A1 (en) * | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric |
ATE499458T1 (de) * | 2002-04-17 | 2011-03-15 | Air Prod & Chem | Verfahren zur herstellung einer porösen sioch- schicht |
US8951342B2 (en) | 2002-04-17 | 2015-02-10 | Air Products And Chemicals, Inc. | Methods for using porogens for low k porous organosilica glass films |
US9061317B2 (en) | 2002-04-17 | 2015-06-23 | Air Products And Chemicals, Inc. | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants |
US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
AU2003302222A1 (en) | 2002-07-22 | 2004-06-30 | Massachusetts Institute Of Technolgoy | Porous material formation by chemical vapor deposition onto colloidal crystal templates |
US6846756B2 (en) * | 2002-07-30 | 2005-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers |
WO2004038783A2 (en) * | 2002-10-21 | 2004-05-06 | Massachusetts Institute Of Technology | Pecvd of organosilicate thin films |
US20040137757A1 (en) * | 2003-01-13 | 2004-07-15 | Applied Materials, Inc. | Method and apparatus to improve cracking thresholds and mechanical properties of low-k dielectric material |
US7208389B1 (en) | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
US7241704B1 (en) | 2003-03-31 | 2007-07-10 | Novellus Systems, Inc. | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups |
US20040197474A1 (en) * | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
US20040253378A1 (en) * | 2003-06-12 | 2004-12-16 | Applied Materials, Inc. | Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes |
JP4513956B2 (ja) * | 2003-07-30 | 2010-07-28 | 日本電気株式会社 | 有機高分子膜及びその製造方法 |
US7390537B1 (en) * | 2003-11-20 | 2008-06-24 | Novellus Systems, Inc. | Methods for producing low-k CDO films with low residual stress |
JP4434146B2 (ja) * | 2003-11-28 | 2010-03-17 | 日本電気株式会社 | 多孔質絶縁膜及びその製造方法並びに多孔質絶縁膜を用いた半導体装置 |
TW200527536A (en) | 2004-02-13 | 2005-08-16 | Matsushita Electric Ind Co Ltd | Method for forming organic/inorganic hybrid insulation film |
US7341761B1 (en) | 2004-03-11 | 2008-03-11 | Novellus Systems, Inc. | Methods for producing low-k CDO films |
US7381662B1 (en) | 2004-03-11 | 2008-06-03 | Novellus Systems, Inc. | Methods for improving the cracking resistance of low-k dielectric materials |
US7781351B1 (en) | 2004-04-07 | 2010-08-24 | Novellus Systems, Inc. | Methods for producing low-k carbon doped oxide films with low residual stress |
US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
US7622400B1 (en) | 2004-05-18 | 2009-11-24 | Novellus Systems, Inc. | Method for improving mechanical properties of low dielectric constant materials |
US7326444B1 (en) * | 2004-09-14 | 2008-02-05 | Novellus Systems, Inc. | Methods for improving integration performance of low stress CDO films |
US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
US7790633B1 (en) | 2004-10-26 | 2010-09-07 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
US7695765B1 (en) | 2004-11-12 | 2010-04-13 | Novellus Systems, Inc. | Methods for producing low-stress carbon-doped oxide films with improved integration properties |
US7892648B2 (en) | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
US7510982B1 (en) | 2005-01-31 | 2009-03-31 | Novellus Systems, Inc. | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles |
US7166531B1 (en) | 2005-01-31 | 2007-01-23 | Novellus Systems, Inc. | VLSI fabrication processes for introducing pores into dielectric materials |
US8282768B1 (en) | 2005-04-26 | 2012-10-09 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8137465B1 (en) | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
JP4747755B2 (ja) * | 2005-09-20 | 2011-08-17 | 独立行政法人産業技術総合研究所 | 有機絶縁膜とその作製方法,及び有機絶縁膜を用いた半導体装置 |
US7892985B1 (en) | 2005-11-15 | 2011-02-22 | Novellus Systems, Inc. | Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing |
US7381644B1 (en) | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
US7923376B1 (en) | 2006-03-30 | 2011-04-12 | Novellus Systems, Inc. | Method of reducing defects in PECVD TEOS films |
JP2007318067A (ja) * | 2006-04-27 | 2007-12-06 | National Institute For Materials Science | 絶縁膜材料、この絶縁膜材料を用いた成膜方法および絶縁膜 |
US10037905B2 (en) | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
US8465991B2 (en) | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
US7851232B2 (en) | 2006-10-30 | 2010-12-14 | Novellus Systems, Inc. | UV treatment for carbon-containing low-k dielectric repair in semiconductor processing |
US7906174B1 (en) * | 2006-12-07 | 2011-03-15 | Novellus Systems, Inc. | PECVD methods for producing ultra low-k dielectric films using UV treatment |
WO2009051163A1 (ja) * | 2007-10-17 | 2009-04-23 | Nec Corporation | 半導体装置およびその製造方法 |
ATE509138T1 (de) | 2007-03-05 | 2011-05-15 | Atotech Deutschland Gmbh | Chrom(vi)-freie schwarzpassivierung für zink- haltige oberflächen |
US8242028B1 (en) | 2007-04-03 | 2012-08-14 | Novellus Systems, Inc. | UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement |
US7622162B1 (en) | 2007-06-07 | 2009-11-24 | Novellus Systems, Inc. | UV treatment of STI films for increasing tensile stress |
US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
JP5015705B2 (ja) * | 2007-09-18 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | 層間絶縁膜形成方法、層間絶縁膜、半導体デバイス、および半導体製造装置 |
KR100962044B1 (ko) * | 2007-12-06 | 2010-06-08 | 성균관대학교산학협력단 | 저유전 플라즈마 중합체 박막 및 그 제조 방법 |
WO2010017088A1 (en) * | 2008-08-04 | 2010-02-11 | The Trustees Of Princeton University | Hybrid dielectric material for thin film transistors |
US8298965B2 (en) * | 2008-09-03 | 2012-10-30 | American Air Liquide, Inc. | Volatile precursors for deposition of C-linked SiCOH dielectrics |
US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
DE102009017702B4 (de) | 2009-04-15 | 2011-06-16 | Atotech Deutschland Gmbh | Verfahren zur Bildung von Korrosionsschutzschichten auf Metalloberflächen |
JP5152093B2 (ja) * | 2009-04-24 | 2013-02-27 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
GB0914543D0 (en) * | 2009-08-20 | 2009-09-30 | Ge Healthcare Ltd | Radioiodination method |
US8247332B2 (en) | 2009-12-04 | 2012-08-21 | Novellus Systems, Inc. | Hardmask materials |
KR20130043084A (ko) | 2010-02-17 | 2013-04-29 | 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | SiCOH 로우-K 필름의 증착 방법 |
WO2013134661A1 (en) * | 2012-03-09 | 2013-09-12 | Air Products And Chemicals, Inc. | Barrier materials for display devices |
US9337068B2 (en) | 2012-12-18 | 2016-05-10 | Lam Research Corporation | Oxygen-containing ceramic hard masks and associated wet-cleans |
KR102259262B1 (ko) * | 2016-07-19 | 2021-05-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 유동성 실리콘-함유 막들의 증착 |
US9847221B1 (en) * | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
CN109119339B (zh) * | 2018-08-26 | 2022-02-08 | 合肥安德科铭半导体科技有限公司 | 一种低介电常数的SiCO间隔层材料及其制备方法和应用 |
EP3680098A1 (de) * | 2019-01-11 | 2020-07-15 | Carl Freudenberg KG | Verbundmaterial mit haftvermittlerschicht auf basis von si, c und o |
CN110129769B (zh) * | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 疏水性的低介电常数膜及其制备方法 |
CN110158052B (zh) | 2019-05-17 | 2021-05-14 | 江苏菲沃泰纳米科技股份有限公司 | 低介电常数膜及其制备方法 |
US20220293417A1 (en) * | 2019-08-16 | 2022-09-15 | Versum Materials Us, Llc | Silicon compounds and methods for depositing films using same |
KR102375281B1 (ko) * | 2020-06-22 | 2022-03-17 | 울산과학기술원 | 고유전 탄화수소 박막을 이용한 커패시터 및 이를 이용한 반도체 소자 |
KR102387926B1 (ko) * | 2020-06-22 | 2022-04-19 | 울산과학기술원 | 고유전 탄화수소 박막 및 이를 이용한 반도체 소자 |
KR102387925B1 (ko) * | 2020-06-22 | 2022-04-19 | 울산과학기술원 | 고유전 탄화수소 박막 및 이를 이용한 반도체 소자 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5246887A (en) * | 1991-07-10 | 1993-09-21 | At&T Bell Laboratories | Dielectric deposition |
JPH05267480A (ja) * | 1992-03-21 | 1993-10-15 | Ricoh Co Ltd | 半導体装置とその製造方法 |
US5530581A (en) * | 1995-05-31 | 1996-06-25 | Eic Laboratories, Inc. | Protective overlayer material and electro-optical coating using same |
TW328971B (en) * | 1995-10-30 | 1998-04-01 | Dow Corning | Method for depositing Si-O containing coatings |
JP3355949B2 (ja) * | 1996-08-16 | 2002-12-09 | 日本電気株式会社 | プラズマcvd絶縁膜の形成方法 |
KR100440233B1 (ko) * | 1996-08-24 | 2004-07-15 | 트리콘 이큅먼츠 리미티드 | 반도체 기판 처리방법 |
KR100463858B1 (ko) * | 1996-08-29 | 2005-02-28 | 마츠시타 덴끼 산교 가부시키가이샤 | 층간절연막의형성방법 |
US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
US6147009A (en) * | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
US6753258B1 (en) * | 2000-11-03 | 2004-06-22 | Applied Materials Inc. | Integration scheme for dual damascene structure |
KR20030093270A (ko) * | 2001-03-23 | 2003-12-06 | 다우 코닝 코포레이션 | 수소화 규소 옥시카바이드 필름의 제조 방법 |
KR100432704B1 (ko) * | 2001-09-01 | 2004-05-24 | 주성엔지니어링(주) | 수소화된 SiOC 박막 제조방법 |
US20040197474A1 (en) * | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
-
2002
- 2002-05-23 KR KR1020020028660A patent/KR20030002993A/ko active Search and Examination
- 2002-06-28 JP JP2003511297A patent/JP3828540B2/ja not_active Expired - Fee Related
- 2002-06-28 US US10/480,770 patent/US7087271B2/en not_active Expired - Fee Related
- 2002-06-28 EP EP02743932A patent/EP1399955A1/en not_active Withdrawn
- 2002-06-28 WO PCT/KR2002/001238 patent/WO2003005429A1/en active Application Filing
- 2002-06-28 CN CNB02813172XA patent/CN1277290C/zh not_active Expired - Fee Related
- 2002-06-28 RU RU2004102519/28A patent/RU2264675C2/ru not_active IP Right Cessation
- 2002-07-05 TW TW091115011A patent/TW571350B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
RU2264675C2 (ru) | 2005-11-20 |
US20040166240A1 (en) | 2004-08-26 |
TW571350B (en) | 2004-01-11 |
RU2004102519A (ru) | 2005-03-20 |
JP2004534400A (ja) | 2004-11-11 |
US7087271B2 (en) | 2006-08-08 |
KR20030002993A (ko) | 2003-01-09 |
CN1277290C (zh) | 2006-09-27 |
EP1399955A1 (en) | 2004-03-24 |
WO2003005429A1 (en) | 2003-01-16 |
CN1522462A (zh) | 2004-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3828540B2 (ja) | 低誘電常数薄膜の製造方法及び水素化されたシリコンオキシカーバイド(SiCO:H)薄膜 | |
US6733830B2 (en) | Processes for depositing low dielectric constant materials | |
JP4987083B2 (ja) | Sti用の二酸化シリコンの高品質誘電体膜の形成:harpii−遠隔プラズマ増強型堆積プロセス−のための異なるシロキサンベースの前駆物質の使用 | |
JP2697315B2 (ja) | フッ素含有シリコン酸化膜の形成方法 | |
JP4066332B2 (ja) | シリコンカーバイド膜の製造方法 | |
JP2005117052A (ja) | シリコンカーバイド膜を製造する方法 | |
JPH04360533A (ja) | 化学気相成長法 | |
JP2004193622A (ja) | 多孔誘電体材料のcvd法 | |
JP2020513680A (ja) | 高密度osg膜用シリル架橋アルキル化合物の使用 | |
JP5614589B2 (ja) | 絶縁膜材料を用いた成膜方法および絶縁膜 | |
TWI729417B (zh) | 矽化合物及使用其沉積膜的方法 | |
JP2006040936A (ja) | 絶縁膜の成膜方法および絶縁膜成膜装置 | |
JPH05102040A (ja) | 成膜方法 | |
JP2723472B2 (ja) | 基体上に硼燐化シリカガラスを付着する装置および方法 | |
JP4628257B2 (ja) | 多孔質膜の形成方法 | |
TWI827977B (zh) | 沉積低k介電膜的系統及方法 | |
TWI772883B (zh) | 單烷氧基矽烷及使用其製造的密有機二氧化矽膜 | |
US20240052490A1 (en) | Monoalkoxysilanes and dialkoxysilanes and dense organosilica films made therefrom | |
JP3482725B2 (ja) | フッ素含有シリコン酸化膜の製造方法 | |
JP3070894B2 (ja) | 薄膜形成方法 | |
JPH098029A (ja) | フッ素を含有する絶縁膜及びその形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060214 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060515 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060606 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060706 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090714 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100714 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110714 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120714 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120714 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130714 Year of fee payment: 7 |
|
LAPS | Cancellation because of no payment of annual fees |