PT2932523T - Fonte de plasma - Google Patents

Fonte de plasma

Info

Publication number
PT2932523T
PT2932523T PT138025382T PT13802538T PT2932523T PT 2932523 T PT2932523 T PT 2932523T PT 138025382 T PT138025382 T PT 138025382T PT 13802538 T PT13802538 T PT 13802538T PT 2932523 T PT2932523 T PT 2932523T
Authority
PT
Portugal
Prior art keywords
plasma source
plasma
source
Prior art date
Application number
PT138025382T
Other languages
English (en)
Portuguese (pt)
Inventor
Krassnitzer Siegfried
Hagmann Juerg
Original Assignee
Oerlikon Surface Solutions Ag Pfäffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfäffikon filed Critical Oerlikon Surface Solutions Ag Pfäffikon
Publication of PT2932523T publication Critical patent/PT2932523T/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321Discharge generated by other radiation
    • H01J37/3233Discharge generated by other radiation using charged particles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32596Hollow cathodes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/48Generating plasma using an arc
    • H05H1/50Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
PT138025382T 2012-12-13 2013-12-09 Fonte de plasma PT2932523T (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012024340.5A DE102012024340A1 (de) 2012-12-13 2012-12-13 Plasmaquelle

Publications (1)

Publication Number Publication Date
PT2932523T true PT2932523T (pt) 2017-04-21

Family

ID=49753120

Family Applications (1)

Application Number Title Priority Date Filing Date
PT138025382T PT2932523T (pt) 2012-12-13 2013-12-09 Fonte de plasma

Country Status (18)

Country Link
US (1) US10032610B2 (ru)
EP (1) EP2932523B1 (ru)
JP (1) JP6362615B2 (ru)
KR (1) KR102106133B1 (ru)
CN (1) CN105144338B (ru)
AR (1) AR093991A1 (ru)
BR (1) BR112015013749B1 (ru)
CA (1) CA2894942C (ru)
DE (1) DE102012024340A1 (ru)
ES (1) ES2625301T3 (ru)
HU (1) HUE033157T2 (ru)
MX (1) MX346874B (ru)
MY (1) MY174916A (ru)
PL (1) PL2932523T3 (ru)
PT (1) PT2932523T (ru)
RU (1) RU2643508C2 (ru)
SG (2) SG11201504651QA (ru)
WO (1) WO2014090389A1 (ru)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015101294A1 (de) * 2015-01-29 2016-08-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum Erzeugen eines Hohlkathodenbogenentladungsplasmas
DE102016213830B3 (de) * 2016-07-27 2017-12-07 Carl Zeiss Smt Gmbh Quell-Hohlkörper sowie EUV-Plasma-Lichtquelle mit einem derartigen Quell-Hohlkörper
GB2552711B (en) * 2016-08-05 2020-04-22 Hydrogen Universe Ltd Energy transfer method and system
EP3810824A4 (en) * 2018-06-20 2022-06-01 Board Of Trustees Of Michigan State University SINGLE BEAM PLASMA SOURCE
CH715877A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Vakuumkammer mit Elektrodenanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
CH715878A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Magnetanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
CN112899662A (zh) * 2019-12-04 2021-06-04 江苏菲沃泰纳米科技股份有限公司 Dlc制备装置和制备方法
WO2022106704A1 (en) 2020-11-23 2022-05-27 Zilift Holdings Limited Inflatable packer system for submersible well pump

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
JPS6011417B2 (ja) * 1979-10-23 1985-03-26 株式会社東芝 ホロ−カソ−ド放電装置
GB2064856B (en) * 1979-10-23 1984-06-13 Tokyo Shibaura Electric Co Discharge apparatus having hollow cathode
US4684848A (en) * 1983-09-26 1987-08-04 Kaufman & Robinson, Inc. Broad-beam electron source
DE3615361C2 (de) * 1986-05-06 1994-09-01 Santos Pereira Ribeiro Car Dos Vorrichtung zur Oberflächenbehandlung von Werkstücken
JPH01252781A (ja) * 1988-03-31 1989-10-09 Joshin Uramoto 圧力勾配型放電によるプラズマcvd装置
DE4029270C1 (ru) * 1990-09-14 1992-04-09 Balzers Ag, Balzers, Li
CA2052080C (en) * 1990-10-10 1997-01-14 Jesse N. Matossian Plasma source arrangement for ion implantation
DE4216330A1 (de) * 1991-05-18 1992-11-19 Groza Igor Verfahren zur ionenplasmabehandlung insbesonders plasmabeschichtung in vakuum mittels verschleissfesten und dekorationsschichten
JPH05251391A (ja) * 1992-03-04 1993-09-28 Tokyo Electron Tohoku Kk 半導体ウエハーのプラズマ処理装置
CH687111A5 (de) * 1992-05-26 1996-09-13 Balzers Hochvakuum Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens.
US5358596A (en) 1992-07-02 1994-10-25 The Board Of Trustees Of The Leland Stanford Junior University Method and apparatus for growing diamond films
JP3365643B2 (ja) * 1992-07-06 2003-01-14 株式会社神戸製鋼所 イオン注入装置
DE4425221C1 (de) * 1994-07-16 1995-08-24 Dresden Vakuumtech Gmbh Verfahren und Einrichtung zum plasmagestützten Beschichten von Substraten in reaktiver Atmosphäre
JP3140636B2 (ja) * 1994-07-26 2001-03-05 日本電子株式会社 プラズマ発生装置
JPH09251935A (ja) * 1996-03-18 1997-09-22 Applied Materials Inc プラズマ点火装置、プラズマを用いる半導体製造装置及び半導体装置のプラズマ点火方法
DE29608484U1 (de) * 1996-05-10 1996-09-19 VTD Vakuumtechnik Dresden GmbH, 01257 Dresden Plasmaerzeugungseinrichtung mit einer Hohlkathode
RU2116707C1 (ru) * 1997-01-06 1998-07-27 Институт сильноточной электроники СО РАН Устройство для создания низкотемпературной газоразрядной плазмы
GB9722650D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source with target feeding apparatus
KR19990041210A (ko) * 1997-11-21 1999-06-15 박원훈 플라즈마를 이용한 재료표면상의 다양한 특성의 고분자 합성방법
US6101972A (en) * 1998-05-13 2000-08-15 Intevac, Inc. Plasma processing system and method
DE19902146C2 (de) * 1999-01-20 2003-07-31 Fraunhofer Ges Forschung Verfahren und Einrichtung zur gepulsten Plasmaaktivierung
EP1194611B1 (de) * 1999-07-13 2004-11-03 Unaxis Balzers Aktiengesellschaft Anlage und verfahren zur vakuumbehandlung bzw. zur pulverherstellung
JP2003506888A (ja) * 1999-08-06 2003-02-18 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド ガスおよび材料を処理する誘導結合環状プラズマ源装置およびその方法
DE19951017A1 (de) * 1999-10-22 2001-05-03 Bosch Gmbh Robert Verfahren und Vorrichtung zur Plasmabehandlung von Oberflächen
CH696179A5 (de) * 2000-06-08 2007-01-31 Satis Vacuum Ind Vertriebs Ag Plasma-Verdampfungsquelle für eine Vakuum Beschichtungsanordnung zum Aufbringen von Vergütungsschichten auf optische Substrate.
JP3957549B2 (ja) * 2002-04-05 2007-08-15 株式会社日立国際電気 基板処埋装置
US6902774B2 (en) * 2002-07-25 2005-06-07 Inficon Gmbh Method of manufacturing a device
JP4329403B2 (ja) * 2003-05-19 2009-09-09 東京エレクトロン株式会社 プラズマ処理装置
US7381311B2 (en) * 2003-10-21 2008-06-03 The United States Of America As Represented By The Secretary Of The Air Force Filtered cathodic-arc plasma source
DE102004010261A1 (de) * 2004-03-03 2005-09-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Zünden einer Hohlkatodenbogenentladung
US7557511B2 (en) 2005-08-01 2009-07-07 Neocera, Llc Apparatus and method utilizing high power density electron beam for generating pulsed stream of ablation plasma
WO2008004240A2 (en) * 2006-07-06 2008-01-10 Ramot At Tel Aviv University Ltd. Device and method for thin film deposition using a vacuum arc in an enclosed cathode-anode assembly
JP4859720B2 (ja) * 2007-03-16 2012-01-25 スタンレー電気株式会社 プラズマ成膜装置
WO2009004762A1 (ja) * 2007-07-02 2009-01-08 Shinmaywa Industries, Ltd. 成膜装置及びその運転方法
US20130098872A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. Switched electron beam plasma source array for uniform plasma production
JP5689051B2 (ja) * 2011-11-25 2015-03-25 株式会社神戸製鋼所 イオンボンバードメント装置

Also Published As

Publication number Publication date
CA2894942A1 (en) 2014-06-19
CN105144338B (zh) 2017-07-14
SG11201504651QA (en) 2015-07-30
PL2932523T3 (pl) 2017-08-31
MX2015007567A (es) 2016-04-15
BR112015013749B1 (pt) 2021-02-02
RU2015128048A (ru) 2017-01-17
EP2932523B1 (de) 2017-02-15
AR093991A1 (es) 2015-07-01
JP6362615B2 (ja) 2018-07-25
CA2894942C (en) 2021-01-05
RU2643508C2 (ru) 2018-02-02
ES2625301T3 (es) 2017-07-19
MY174916A (en) 2020-05-21
KR102106133B1 (ko) 2020-05-04
CN105144338A (zh) 2015-12-09
BR112015013749A2 (pt) 2017-07-11
US20150318151A1 (en) 2015-11-05
US10032610B2 (en) 2018-07-24
DE102012024340A1 (de) 2014-06-18
MX346874B (es) 2017-03-31
JP2016509333A (ja) 2016-03-24
SG10201709310WA (en) 2018-01-30
WO2014090389A1 (de) 2014-06-19
KR20150093713A (ko) 2015-08-18
EP2932523A1 (de) 2015-10-21
HUE033157T2 (en) 2017-11-28

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