WO2009004762A1 - 成膜装置及びその運転方法 - Google Patents

成膜装置及びその運転方法 Download PDF

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Publication number
WO2009004762A1
WO2009004762A1 PCT/JP2008/001517 JP2008001517W WO2009004762A1 WO 2009004762 A1 WO2009004762 A1 WO 2009004762A1 JP 2008001517 W JP2008001517 W JP 2008001517W WO 2009004762 A1 WO2009004762 A1 WO 2009004762A1
Authority
WO
WIPO (PCT)
Prior art keywords
cathode
plasma
exit port
power source
filming apparatus
Prior art date
Application number
PCT/JP2008/001517
Other languages
English (en)
French (fr)
Inventor
Motoi Okada
Kenji Yamakawa
Takeshi Furutsuka
Yoshiro Murashita
Original Assignee
Shinmaywa Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinmaywa Industries, Ltd. filed Critical Shinmaywa Industries, Ltd.
Priority to JP2008554954A priority Critical patent/JP5175229B2/ja
Publication of WO2009004762A1 publication Critical patent/WO2009004762A1/ja

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本発明の成膜装置は、プラズマ流出口(91)を有する容器(25)と、カソード(15)と、を有するプラズマガン(1)と、成膜室(3)と、プラズマ流出口(91)を閉鎖又は開放するシャッタ装置(30)と、成膜室(3)の内部に配設されたアノード(74)と、直流電源(27)と、制御装置(102)と、を備え、制御装置(102)は、シャッタ装置(30)がプラズマ流出口(91)を閉鎖し、直流電源(27)がカソード(15)に電圧を印加し、カソード(15)でグロー放電を発生させ、シャッタ装置(30)がプラズマ流出口(91)を開放し、直流電源(27)がカソード(15)に印加する電圧を変更してカソード(15)でアーク放電を発生させることによりプラズマが生成されるように制御する。
PCT/JP2008/001517 2007-07-02 2008-06-13 成膜装置及びその運転方法 WO2009004762A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008554954A JP5175229B2 (ja) 2007-07-02 2008-06-13 成膜装置及びその運転方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-173667 2007-07-02
JP2007173667 2007-07-02

Publications (1)

Publication Number Publication Date
WO2009004762A1 true WO2009004762A1 (ja) 2009-01-08

Family

ID=40225829

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001517 WO2009004762A1 (ja) 2007-07-02 2008-06-13 成膜装置及びその運転方法

Country Status (3)

Country Link
JP (1) JP5175229B2 (ja)
TW (1) TW200912020A (ja)
WO (1) WO2009004762A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150093713A (ko) * 2012-12-13 2015-08-18 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 트뤼프바흐 플라즈마 공급원

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05202467A (ja) * 1992-01-28 1993-08-10 Stanley Electric Co Ltd 真空蒸着装置
JPH07233475A (ja) * 1994-02-21 1995-09-05 Asahi Glass Co Ltd ダイアモンド状薄膜の形成方法
JP2005146382A (ja) * 2003-11-18 2005-06-09 Stanley Electric Co Ltd アーク放電型真空成膜装置および成膜方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05202467A (ja) * 1992-01-28 1993-08-10 Stanley Electric Co Ltd 真空蒸着装置
JPH07233475A (ja) * 1994-02-21 1995-09-05 Asahi Glass Co Ltd ダイアモンド状薄膜の形成方法
JP2005146382A (ja) * 2003-11-18 2005-06-09 Stanley Electric Co Ltd アーク放電型真空成膜装置および成膜方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150093713A (ko) * 2012-12-13 2015-08-18 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 트뤼프바흐 플라즈마 공급원
JP2016509333A (ja) * 2012-12-13 2016-03-24 エーリコン・サーフェス・ソリューションズ・アーゲー・トリューバッハ プラズマ源
US10032610B2 (en) 2012-12-13 2018-07-24 Oberlikon Surface Solutions Ag, Pfäffikon Plasma source
KR102106133B1 (ko) * 2012-12-13 2020-05-04 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 플라즈마 공급원

Also Published As

Publication number Publication date
TW200912020A (en) 2009-03-16
JP5175229B2 (ja) 2013-04-03
JPWO2009004762A1 (ja) 2010-08-26

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