PL2157205T3 - Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocy - Google Patents

Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocy

Info

Publication number
PL2157205T3
PL2157205T3 PL09159717T PL09159717T PL2157205T3 PL 2157205 T3 PL2157205 T3 PL 2157205T3 PL 09159717 T PL09159717 T PL 09159717T PL 09159717 T PL09159717 T PL 09159717T PL 2157205 T3 PL2157205 T3 PL 2157205T3
Authority
PL
Poland
Prior art keywords
pulse
power
time
energy source
electrical energy
Prior art date
Application number
PL09159717T
Other languages
English (en)
Inventor
Jones Alami
Georg Erkens
Jürgen Müller
Jörg Vetter
Original Assignee
Sulzer Metaplas Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sulzer Metaplas Gmbh filed Critical Sulzer Metaplas Gmbh
Publication of PL2157205T3 publication Critical patent/PL2157205T3/pl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3485Sputtering using pulsed power to the target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • H01J37/3408Planar magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464Operating strategies
    • H01J37/3467Pulsed operation, e.g. HIPIMS
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/026Means for avoiding or neutralising unwanted electrical charges on tube components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3444Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
PL09159717T 2008-07-29 2009-05-08 Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocy PL2157205T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08161322 2008-07-29
EP09159717A EP2157205B1 (en) 2008-07-29 2009-05-08 A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source

Publications (1)

Publication Number Publication Date
PL2157205T3 true PL2157205T3 (pl) 2012-04-30

Family

ID=39892270

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09159717T PL2157205T3 (pl) 2008-07-29 2009-05-08 Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocy

Country Status (5)

Country Link
US (1) US9551066B2 (pl)
EP (1) EP2157205B1 (pl)
JP (2) JP6042048B2 (pl)
AT (1) ATE535629T1 (pl)
PL (1) PL2157205T3 (pl)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9249498B2 (en) * 2010-06-28 2016-02-02 Micron Technology, Inc. Forming memory using high power impulse magnetron sputtering
JP5765627B2 (ja) * 2010-09-27 2015-08-19 日立金属株式会社 耐久性に優れる被覆工具およびその製造方法
BRPI1102335A2 (pt) 2011-05-27 2013-06-25 Mahle Metal Leve Sa elemento dotado de pelo menos uma superfÍcie de deslizamento com um revestimento para uso em um motor de combustço interna ou em um compressor
BRPI1102336B1 (pt) * 2011-05-27 2021-01-12 Mahle Metal Leve S/A elemento dotado de pelo menos uma superfície de deslizamento para uso em um motor de combustão
CN104583451A (zh) * 2012-06-29 2015-04-29 欧瑞康先进科技股份公司 通过脉冲双极溅射的涂覆方法
DE102012107163A1 (de) 2012-08-03 2014-05-15 INI Coatings Ltd. Verfahren zur Beschichtung eines Substrats mittels Hochenergieimpulsmagnetronsputtern
EP3211119B1 (en) * 2013-02-08 2018-09-05 Evatec AG Methof of sputtering and sputter system
DE102013106351A1 (de) 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche
JP6426726B2 (ja) * 2013-06-26 2018-11-21 エーリコン・サーフェス・ソリューションズ・アーゲー・プフェフィコン 装飾hipims硬質材料層
PL3017079T5 (pl) * 2013-07-03 2020-12-28 Oerlikon Surface Solutions Ag, Pfäffikon Sposób wytwarzania warstw tixsi1-xn
JP2016084508A (ja) * 2014-10-27 2016-05-19 株式会社アルバック 金属膜成膜方法
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
TWI575119B (zh) * 2015-04-28 2017-03-21 遠東科技大學 鋁基鍋具之導磁層加工方法
US20200273684A1 (en) * 2019-02-25 2020-08-27 Starfire Industries Llc Method and apparatus for metal and ceramic nanolayering for accident tolerant nuclear fuel, particle accelerators, and aerospace leading edges
RU2649904C1 (ru) * 2016-11-18 2018-04-05 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") Устройство для синтеза и осаждения металлических покрытий на токопроводящих изделиях
KR20180135853A (ko) * 2017-05-10 2018-12-21 어플라이드 머티어리얼스, 인코포레이티드 펄스형 dc 전력 공급부
EP3639356A4 (en) * 2017-06-12 2021-03-03 Starfire Industries LLC PULSE POWER AND ION FLOW CONTROLLED PULSE POWER MODULE FOR MAGNETRON SPRAYING
KR102141684B1 (ko) * 2018-08-24 2020-09-14 한국원자력연구원 전류 펄스를 제어하는 모듈레이터 및 그 방법
SE542881C2 (en) * 2018-12-27 2020-08-04 Nils Brenning Ion thruster and method for providing thrust

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3700633C2 (de) 1987-01-12 1997-02-20 Reinar Dr Gruen Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma
DE4127317C2 (de) * 1991-08-17 1999-09-02 Leybold Ag Einrichtung zum Behandeln von Substraten
DE4233720C2 (de) * 1992-10-07 2001-05-17 Leybold Ag Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen
JPH0853760A (ja) 1993-07-28 1996-02-27 Asahi Glass Co Ltd 酸化ケイ素膜の製造方法
DE69431573T2 (de) * 1993-07-28 2003-06-12 Asahi Glass Co Ltd Verfahren zur Herstellung von Schichten
SG46607A1 (en) * 1993-07-28 1998-02-20 Asahi Glass Co Ltd Method of an apparatus for sputtering
JP3684593B2 (ja) * 1993-07-28 2005-08-17 旭硝子株式会社 スパッタリング方法およびその装置
DE19610012B4 (de) * 1996-03-14 2005-02-10 Unaxis Deutschland Holding Gmbh Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre
SE9704607D0 (sv) 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
JP4120974B2 (ja) * 1997-06-17 2008-07-16 キヤノンアネルバ株式会社 薄膜作製方法および薄膜作製装置
SE525231C2 (sv) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
JP2003022524A (ja) * 2001-07-06 2003-01-24 National Institute Of Advanced Industrial & Technology 磁気記録材料用基板の製造方法及び磁気記録材料
JP2003073814A (ja) * 2001-08-30 2003-03-12 Mitsubishi Heavy Ind Ltd 製膜装置
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
SE0402644D0 (sv) 2004-11-02 2004-11-02 Biocell Ab Method and apparatus for producing electric discharges
JP2007162100A (ja) * 2005-12-15 2007-06-28 Asahi Glass Co Ltd スパッタリング成膜方法
EP2010691B1 (de) * 2006-04-21 2017-12-06 CemeCon AG Beschichteter körper
GB0608582D0 (en) * 2006-05-02 2006-06-07 Univ Sheffield Hallam High power impulse magnetron sputtering vapour deposition
WO2008071734A2 (en) * 2006-12-12 2008-06-19 Oc Oerlikon Balzers Ag Arc suppression and pulsing in high power impulse magnetron sputtering (hipims)

Also Published As

Publication number Publication date
JP2010031359A (ja) 2010-02-12
EP2157205B1 (en) 2011-11-30
JP6042048B2 (ja) 2016-12-14
JP2015148015A (ja) 2015-08-20
EP2157205A1 (en) 2010-02-24
ATE535629T1 (de) 2011-12-15
US9551066B2 (en) 2017-01-24
US20100236919A1 (en) 2010-09-23

Similar Documents

Publication Publication Date Title
PL2157205T3 (pl) Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocy
US20060278524A1 (en) System and method for modulating power signals to control sputtering
US20060278521A1 (en) System and method for controlling ion density and energy using modulated power signals
TW200940735A (en) Reactive sputtering with HIPIMS
WO2008130507A3 (en) Plasma source with segmented magnetron cathode
WO2009065039A3 (en) Methods and apparatus for sputtering deposition using direct current
WO2008071732A3 (en) Rf substrate bias with high power impulse magnetron sputtering (hipims)
TW200732488A (en) Sputtering method and sputtering system
WO2013045454A3 (en) Coating of substrates using hipims
CA2916769C (en) Tib2 layers and manufacture thereof
US20020047539A1 (en) Process and switching arrangement for pulsing energy introduction into magnetron discharges
CN103938166A (zh) 一种高能量脉冲式磁控溅射方法及磁控溅射装置
TW200721265A (en) Silicon dot forming method and silicon dot forming apparatus
CN101824602B (zh) 一种具有高启动电压的磁控溅射脉冲电源
CN105506549A (zh) 脉冲直流溅射制备五氧化二铌薄膜的方法
MX2013012200A (es) Metodo de pulverizacion catódica por magnetron de impulso de alta potencia que proporciona la ionizacion mejorada de las particulas obtenidas por pulverización catódica y aparato para su implementacion.
CN108220901B (zh) 一种等离子体溅射镀膜方法
JP2007186726A5 (pl)
CN103469168B (zh) 一种制备润湿性可控的高光滑高硬TiN薄膜的方法
WO2015025823A1 (ja) スパッタリング成膜装置及びスパッタリング成膜方法
EP2286643B1 (de) Vorrichtung und verfahren zum hochleistungs-puls-gasfluss-sputtern
CN105392911A (zh) TixSi1-xN层及其制造
Ehiasarian et al. Industrial size high power impulse magnetron sputtering
CN203034085U (zh) 一种改善的蒸镀镀膜机
CN102230160A (zh) 一种过压脉冲增强磁控溅射镀膜方法