200912020 九、發明說明： 【發明所屬之技術領域】 本發明係有關成臈裝置及成膜裝置的 传徒用由曾將认 更用方法，尤其 ” 電水搶所生成之電漿以在基板進 置及其運轉方法。 丁成膜之成膜裝 【先前技術】 電漿成膜裝置，係以電漿搶所 m Vi λ μ., 取乏窀漿作為離子源 土板進行成膜之裝置。電槳成膜裝置，係經由 ::諸步驟…以讀之陰極來生成電聚之步二 用=成之電漿在基板進行成膜之步驟、停止電漿的產生 ^之:：自:出冷卻之步驟、使裝置内對大氣開放並將已成 暴扳取出之步驟等―卓由 ^ m L 7科連串的動作後，而完成成膜步 'Λ丨’在使複數個基板連續成膜之情形，必須對！個 餘進行-連串的成膜步驟之後，方能將下—個基板配置 在叙置内以進行成膜，非常的欠缺效率。 “針對此類問題’已知有電弧放電型真空成膜裝置及成 膜方法（例如參照專利文獻〇，在成膜時將配置在電默室 之真空容器與成膜室之真空容器間的分隔閥予以開放，在 成膜％以外則將分隔閥予以關閉，以在電漿室之真空容器 内維持電漿生成狀態。在專利文^丄所揭示之電弧放電型 真空成膜裝置及成膜方法，#由在成膜時以外亦維持電衆 生成狀態，而能省略陰極之冷卻步驟或電漿的產生步驟， 可有效率地使複數個基板連續成膜。 200912020 專利文獻1 :日本特開2005-1463 82號公報 【發明内容】 然而’在專利文獻1所揭示之電弧放電型真空成膜裝 置及成膜方法，就成膜裝置更低成本化、及成膜裝置之製 造步驟簡化而言，仍有可改善之餘地。 本發明，係為解決上述問題而成者，其目的在於，提 :能謀求成膜裝置更低成本化、以及成膜裝置之製造步驟 間化，且能高效率地連續於基板反覆成膜的成膜裝置及其 運轉方法。 ' 本案發明人，為解決上述習知技術的問題，經反覆深 入檢討的結果，有以下的發現而完成本發明。 :亦即本案發明人發現，當形成於陰極與陽極間之放 電空間即使受到遮蔽時，在電漿搶内的壓力有O.OKOPa 右若將100v左右之電壓施加於陰極與中間電極之間， 在陰極與中間電極之間會產生輝光放電…此時，由於 在陰極與中間電極之間流動的電流低至數安培（i〇a以 下），不至於會電弧放電而維持在輝光放電的狀態，因而想 到本發明。 為解決上述問題，本發明之成膜裝置，其特徵在於， 具備： 電水搶包含具有電毁流出口的容器、配設在該容器 内部且藉由放電以生成電衆的陰極、以及用來進行該容器 内部之排氣及密封之排氣閥； 200912020 成膜室，具有電漿流入口 ’被配設成其内部能通過該 電漿流入口及電漿流出口而與該容器之内部連通，而能進 行該内部之減壓； 擋門裝置’用以進行進行該容器之電漿流出口之關閉 或開放； 陽極，配設在該成膜室内部； 直流電源，係將負極連接該陰極、正極連接該陽極， 而將電壓施加於該陰極；以及 控制裝置； 該控制裝置，係控制成該擋門裝置將該容器之電漿流 出口關閉’該直流電源將電壓施加於該陰極，以在該陰極 產生輝光放電·，該擋門裝置將該容器的電漿流出口開放， 變更該直流電源施加於該陰極的電壓，以在該陰極產生電 弧放電而生成該電漿。 藉此，與上述專利文獻1所揭示之電弧放電型真空成 膜裝置不同，由於無須在陰極與擋門裝置之間另外設置陽 極，因而能謀求成膜裝置更低成本化、成膜裝置之製造步 又，本發明之成膜裝置之運轉方法，該成膜裝置具備·· 電漿槍，包含具有電漿流出口的容器、配設在該容器 内部且藉由放電以生成電㈣陰極、以及用來進行= 内部之排氣及密封之排氣閥； Λ ° 電將：膜室’具有電衆流入口，被配設成其内部能通過該 %水机入口及電聚流出口而與該容器之内部連通，而能進 10 200912020 行該内部之減壓； 指門裝·置，用以進行該交5¾ >适·將 ν* , 迫仃邊合器之電漿流出口之關閉或開 放； %極，配設在該成膜室内部；以及 正極連接該陽極 直流電溽，係將負極連接該陰極、 而將電壓施加於該陰極； 其特徵在於，具備以下步驟： :擋門裝置將該容器之電漿流出口_，該直流電源 字私壓鉍加於該陰極，以在該陰極產生輝光放電丨以 讀Η裝置將該容器之電㈣^ 口㈣，變更該直流 電源施加於該陰極的電麼，以在該陰極產生 成該電漿。 藉此， 膜裳置不同 極，因而能 驟簡化。 與上述專利文獻1所揭示之電弧放電型真空成 J由於無須在陰極與擋門農置之間另外設置陽 謀求成膜裝置更低成本化、成膜裝置之製造步 方法中，其進一步具備 使用所生成之電漿而對 又’本發明之成膜裝置之運轉 以下步驟： 將基板配置在該成膜室内部 该基板進行成膜；以及 由該擋門裝置將該容器之電漿流出 产啻货Α Λ 电求机出口關閉，變更該直 机電源鉍加於該陰極之電壓以維持輝光放電。 藉此，可有效率連續在基板反覆成膜。 以及優點，可 本發明之上述目的、其他目的、特徵 200912020 根據附圖及以下之較佳形態之詳細說明而清楚明瞭。 根據本發明之成膜裝置及其使用方法，可謀求成膜裝 置更低成本化、成膜裝置之製造步驟簡化，且能有效率地 連續在基板反覆成膜。 【實施方式】 以下，邊參照圖式以說明本發明之較佳實施形態。 (實施形態1) 圖1係本發明之實施形態丨之成膜裝置的構成之示意 圖。圖2係圖i所示成膜裝置之撐門裝置將電衆流出口開 放後之狀態之示意圖。再者，在本實施形態之成膜裝置之 構造的方向，為方便起見，以圖丨及圖2所示之三維正交 座標系的X軸、γ轴、及z軸的方向來表示。 首先，對於本實施形態1之成膜裝置之構成，邊參照 圖1及圖2予以說明。 K. 如圖1所示，本實施形態i之成膜裝置1〇〇，具備 狀電蒙成膜裝i 1()1與控制裝置102β片狀電襞成膜裝置 101在ΥΖ平面呈大致十字形，從ζ軸方向觀之，依^具 有：用以產生高密度電漿之雙重式（dualtype)電漿搶丨；2 z軸方向之軸為中心之圓筒狀的片狀電漿變形室2. r 、 轴方向之軸為中心之圓筒狀的非磁性（例如不鐵^ :成膜室3。再者，電漿搶i、片狀電漿變形室2 、) 室3，以彼此保持氣密狀態而連通。 、膜 在此詳細說明片狀電漿成膜裝置1〇1。 12 200912020 電漿搶i具有圓筒狀的第！筒構件10。藉由第1筒構 :二的内部空間而形成放電空㈤11。在第1筒構件10之 一端部γ以密封放電空間u的方式而設有第i蓋構件12。 ^在第1筒構件10之另—端部，配設有圓環狀的第2 ^構件18 ’第2蓋構件18的内部空間，構成有電聚流出 91又，由第1筒構件10、第1及第2蓋構件12、18 而構成容器25。 在第1蓋構件12 ’配設有由纽㈣所構成之圓筒狀的 助陰極13，其係以氣密方式貫穿該第1蓋構件12之中 ^ 者輛延伸。在輔助陰極13的底端，藉適當之 配：而—與未圖示之氬氣(Ar)供應裝置連接’以從輔助陰極 之两端將氬氣供應至放電空間η β。又，在輔助 ^狀之付近的外周面，設有由六缝鑭㈣6)構成之圓 成=陰極14。藉由其等輔助陰極13與主陰…構 又，在第1蓋構件12配設有徑長大於輔助陰極 圓筒狀的保護構株t < 更稱件Ιό，其被配置成與辅助陰極u 沿著Z軸延伸。扣地 1 j釉且 保濩構件16係由鉬（Mo)或鎢（W)所構成， 伯 1示邊構件 1 ^ 的則端，設有圓環狀的窗構件17。窗 Π由鎢所構虑， 傅件 藉由其等保護構件16與窗構件17而使 極15受到保護。 之陰 成之第i主㈣ 5,透過電阻^而與由直流電源構 原26之負極形成電氣連接，又，陰極15連 接有第2主電调 27的負極。又，用以檢測第1及第2主 龟源26、27之私， 工 心袍出電壓的電壓檢測器24，連接於第i及 13 200912020 由電壓檢測器24所檢測的電 的運算處理部。再者，從第 將電壓施加於陰極1 5，藉以 且谷待後述。 第2主電源、26、27的兩端β 壓，被傳至後述之控制器1 02 1主電源26或第2主電源27 形成電I。有關該t漿的形& 在第1筒構件1 〇的側壁，設有__對之圓環狀的中間電 極19、20，其係以氣密方式貫穿該第1筒構件10。中間 電極19、20分別透過電阻R2、R3，藉由切換開關μ而 選擇性連接於帛1主電源26或第2主電源27，從第i主 電原6或弟2主電源2 7施加既定的正電壓。再者，第1 同構件1〇、中間電極19、20、與陰極15，係藉由適當的 手段而彼此絕緣。 又，在第1筒構件1 〇之另一端部側之側壁，設有可藉 由第1排氣閥21而進行第！筒構件1()之内部排氣及密封 的真空栗連接口 22。真空泵連接口 22透過適當之配管而 連接第1真空泵1〇3(例如乾式泵）。藉由第1真空泵1〇3 抽成真空後，放電空間n可迅速的被減壓至可產生電漿 之程度。此時，在放電空間u中，由於有藉中間電極19、 20而阻礙空氣的流動，因而產生在陰極1 5側的壓力升高 之壓力梯度。 在第1筒構件1 〇之放電空間1 i的適當位置，以氣密 方式設有第1壓力檢測器28 ^第i壓力檢測器係用以檢測 放電空間11的壓力，並將所測得之壓力傳至控制裝置丨02。 又’第1壓力檢測器28在此係使用離子計，只要可檢測 壓力’亦可使用例如潘寧真空計（penning Gauge)或Pirani 14 200912020 gauge(皮冉尼真空計）。 在第1筒構件1 〇之徑向的外側，以圍繞該第j筒構件 10之側J之方式，設有可控制磁力強度之環狀的第1電磁 線圈23。詳細而言，第i電磁線圈23係設置成與第i筒 構件10同軸，且於Z軸方向係位在中間電極與第2蓋構 件18之間。 又，使電流流經該第1電磁線圈23，將既定之正電壓 施加於中間電極19、20,藉此，在電漿槍i的放電空間^， 祀據；第1屯磁線圈23之線圈磁場及中間電極19、2〇之 電場，形成磁通密度在Z軸方向的梯度。藉由該磁通密度 在Z軸方向之梯度，構成電漿之荷電粒子，以在放電* = 11内從陰極15朝z轴方向運動的方式而邊旋轉磁力^ 朝Z軸方向前進’作為其等荷電粒子之集合體之電漿，遂 成大致等密度分布之圓柱狀之電衆（以下稱圓柱電而 被拉向片狀電漿變形室2之侧（參照圖2)。 第2蓋構件18，設有貫穿於厚度方向（Z軸方向）的貫 穿孔，該貫穿孔構成電漿流出口 91。又，在第2蓋構件Μ 以氣密方式設有擋_30，以控_從電聚流 之流出與否。_置30具有用以開閉電衆流出口 開閉構件91，以及使開閉構件31平行移動於電 91之開口面的驅動器32。開閉構件31之構 ' 密封電漿流出口 91時保有放電空間 ^係在 —t ] 11内的氧密狀熊。太 貫態中的擋門裝置30係以閥門構成，開閉構件： 以其閥體構成，驅動器32係以其 係 閥體驅動裝置（電磁驅動 15 200912020 裝置、氣缸等）構成。 再者，在圖1及圖2中，一 驅動裝置的致動器。又…示構成驅動器32之閥體200912020 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for forming a sputum device and a film forming device by using a method which has been recognized by a method, in particular, a battery generated by electric water to enter the substrate. Setting and operation method. Film forming device for Ding film [Prior Art] Plasma film forming device is a device for film formation by using plasma slurry as m ion source. The electric paddle film forming apparatus is: through the steps of: generating a photopolymerization step by reading the cathode; using the step of forming a plasma on the substrate to form a film, stopping the generation of the plasma: The step of cooling, the step of opening the device to the atmosphere, and the step of taking out the storm, etc. - after the series of operations, the film forming step 'Λ丨' is completed in a plurality of substrates. In the case of a film, it is necessary to carry out a series of film forming steps before the next substrate can be placed in the film for film formation, which is very inefficient. Arc discharge type vacuum film forming apparatus and film forming method (for example, refer to patent document) 〇, when the film is formed, the partition valve disposed between the vacuum container of the electric silent chamber and the vacuum container of the film forming chamber is opened, and the partition valve is closed except for the film formation %, in the vacuum container of the plasma chamber Maintaining the state of plasma generation. The arc discharge type vacuum film forming apparatus and film forming method disclosed in the patent document, # maintains the state of electricity generation in addition to film formation, and can omit the cooling step or plasma of the cathode. In the production process, the plurality of substrates can be formed into a film in a continuous manner. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-1463. And the film forming method, there is still room for improvement in terms of lowering the cost of the film forming apparatus and simplifying the manufacturing steps of the film forming apparatus. The present invention has been made to solve the above problems, and its object is to provide: A film forming apparatus and a method of operating the film forming apparatus which can reduce the cost of the film forming apparatus and the manufacturing process of the film forming apparatus, and can continuously form a film continuously over the substrate can be obtained. The inventor of the present invention In view of the above-mentioned problems of the prior art, the present invention has been completed by the following findings: The inventors of the present invention have found that when the discharge space formed between the cathode and the anode is shielded, it is in the plasma. The pressure inside the grab is O.OKOPa. If a voltage of about 100v is applied between the cathode and the intermediate electrode, a glow discharge is generated between the cathode and the intermediate electrode. At this time, due to the current flowing between the cathode and the intermediate electrode The film forming apparatus of the present invention is characterized in that it is not as low as several amps (i〇a or less) and is maintained in a glow discharge state due to arc discharge. In order to solve the above problems, the film forming apparatus of the present invention is characterized in that: The invention comprises a container having an electrical rupture outlet, a cathode disposed inside the container and generating electricity by discharging, and an exhaust valve for performing exhaust and sealing inside the container; 200912020 Film forming chamber, having electricity The slurry inlet port is configured such that its interior can communicate with the interior of the vessel through the plasma inflow port and the plasma outflow port, and the internal decompression can be performed; The device 'is used to perform the closing or opening of the plasma outlet of the container; the anode is disposed inside the film forming chamber; the direct current power source connects the negative electrode to the cathode, the positive electrode to the anode, and applies a voltage to the anode a cathode; and a control device configured to control the gate device to close the plasma outlet of the container. The DC power source applies a voltage to the cathode to generate a glow discharge at the cathode. The plasma outlet of the container is opened, and the voltage applied to the cathode by the DC power source is changed to generate an arc discharge at the cathode to generate the plasma. Therefore, unlike the arc discharge type vacuum film forming apparatus disclosed in Patent Document 1, since it is not necessary to separately provide an anode between the cathode and the shutter device, it is possible to reduce the cost of the film forming apparatus and manufacture the film forming apparatus. Further, in the method of operating a film forming apparatus of the present invention, the film forming apparatus includes a plasma gun including a container having a plasma outflow port disposed inside the container and being electrically discharged to generate an electric (four) cathode, and Exhaust valve for internal exhaust and sealing; Λ ° Electric: The membrane chamber has an electric inlet, which is configured such that its interior can pass through the % water inlet and the electrical converging outlet The inside of the container is connected, and the internal decompression can be carried out in 10 200912020; the door is installed and used to carry out the exchange, and the ν* is forced to close the plasma outlet of the edger or Opened; a % pole disposed inside the film forming chamber; and a positive electrode connected to the anode direct current, connecting a negative electrode to the cathode and applying a voltage to the cathode; characterized in that: the door device is Plasma flow of the container Exit _, the DC power supply voltage is applied to the cathode to generate a glow discharge at the cathode, and the reading device is used to change the electricity of the DC power supply to the cathode. The plasma is produced at the cathode. Thereby, the film is placed at different poles and can be simplified. In the arc-discharge type vacuum forming method disclosed in the above-mentioned Patent Document 1, it is not necessary to provide a method for manufacturing a film forming apparatus which is required to reduce the cost of the film forming apparatus between the cathode and the door. The generated plasma and the operation of the film forming apparatus of the present invention are the following steps: disposing a substrate in the inside of the film forming chamber to form a film; and discharging the plasma of the container from the door device Α Λ The electric machine outlet is closed, and the voltage applied to the cathode is changed to maintain the glow discharge. Thereby, the film can be continuously formed on the substrate in an efficient manner. The above and other objects and features of the present invention will be apparent from the description and appended claims. According to the film forming apparatus and the method of using the same of the present invention, it is possible to reduce the cost of the film forming apparatus, simplify the manufacturing steps of the film forming apparatus, and efficiently and continuously form a film on the substrate. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. (Embodiment 1) Fig. 1 is a schematic view showing a configuration of a film forming apparatus according to an embodiment of the present invention. Fig. 2 is a view showing a state in which the door opening device of the film forming apparatus shown in Fig. i opens the electric outlet. Further, in the direction of the structure of the film forming apparatus of the present embodiment, the directions of the X-axis, the γ-axis, and the z-axis of the three-dimensional orthogonal coordinate system shown in Fig. 2 and Fig. 2 are shown for convenience. First, the configuration of the film forming apparatus of the first embodiment will be described with reference to Figs. 1 and 2 . K. As shown in Fig. 1, the film forming apparatus 1 of the present embodiment i includes the electric film forming apparatus i1()1 and the control unit 102. The sheet-shaped electric film forming apparatus 101 is substantially ten in the plane. The glyph, viewed from the direction of the ζ axis, has: a dual-type plasma smashing for generating high-density plasma; a cylindrical slab-shaped plasma deformation chamber centered on the axis of the z-axis 2. r, the axis of the axis is the center of the cylindrical non-magnetic (for example, not iron ^: film forming chamber 3. Furthermore, plasma grab i, sheet plasma deformation chamber 2,) chamber 3, to each other Keep airtight and connected. Film The sheet-like plasma film forming apparatus 1〇1 will be described in detail herein. 12 200912020 The plasma grabs the one with a cylindrical shape! The tubular member 10. The discharge space (five) 11 is formed by the internal space of the first tubular structure: two. The i-th cover member 12 is provided at one end portion γ of the first tubular member 10 so as to seal the discharge space u. ^The other end portion of the first tubular member 10 is provided with an annular second ^ member 18'. The inner space of the second cover member 18 is configured to have an electropolymerization outflow 91, and the first tubular member 10, The first and second cover members 12 and 18 constitute the container 25. A cylindrical auxiliary cathode 13 composed of a button (4) is disposed in the first cover member 12', and extends through the first cover member 12 in an airtight manner. At the bottom end of the auxiliary cathode 13, argon gas is supplied to the discharge space η β from both ends of the auxiliary cathode by appropriately arranging - by connecting with an argon (Ar) supply means not shown. Further, on the outer peripheral surface of the auxiliary shape, a circular body = a cathode 14 composed of six slits (four) 6) is provided. By the auxiliary cathode 13 and the main cathode structure, the first cover member 12 is provided with a protective structure t < which is larger than the auxiliary cathode cylindrical shape; more specifically, it is configured to be associated with the auxiliary cathode u extends along the Z axis. The grounding 1 j glaze and the heat retaining member 16 are made of molybdenum (Mo) or tungsten (W), and the end of the side member 1 ^ is provided with an annular window member 17. The window is made of tungsten, and the electrode 15 is protected by the protective member 16 and the window member 17. The i-th main (four) 5 is electrically connected to the negative electrode of the DC power source structure 26 through the resistor ^, and the cathode 15 is connected to the negative electrode of the second main ESC 27. Further, a voltage detector 24 for detecting the voltage of the first and second main turtles 26 and 27, and the voltage of the workbench is connected to the arithmetic processing unit of the first and third 200912020 detected by the voltage detector 24. . Further, the voltage is applied to the cathode 15 from the first voltage, and it will be described later. The β voltages at both ends of the second main power source 26 and 27 are transmitted to the controller 1 0 1 main power source 26 or the second main power source 27 which will be described later to form the electric power I. Regarding the shape of the t-slurry, the side wall of the first tubular member 1 is provided with an annular intermediate electrode 19, 20 which penetrates the first tubular member 10 in an airtight manner. The intermediate electrodes 19 and 20 are respectively connected to the 主1 main power source 26 or the second main power source 27 through the resistors R2 and R3 via the resistors R2 and R3, and are applied from the ith main power source 6 or the second main power source 27 Positive voltage. Further, the first member member 1, the intermediate electrodes 19, 20, and the cathode 15 are insulated from each other by an appropriate means. Further, the side wall on the other end side of the first tubular member 1 is provided with the first exhaust valve 21; The internal exhaust of the tubular member 1 () and the sealed vacuum pump connection port 22. The vacuum pump connection port 22 is connected to the first vacuum pump 1〇3 (for example, a dry pump) through an appropriate piping. After the vacuum is evacuated by the first vacuum pump 1〇3, the discharge space n can be quickly decompressed to such an extent that plasma can be generated. At this time, in the discharge space u, since the flow of the air is hindered by the intermediate electrodes 19, 20, a pressure gradient in which the pressure on the cathode 15 side is increased is generated. A first pressure detector 28 is provided in an airtight manner at an appropriate position of the discharge space 1 i of the first tubular member 1 ^. The i-th pressure detector detects the pressure of the discharge space 11 and measures the measured pressure. The pressure is transmitted to the control unit 丨02. Further, the first pressure detector 28 uses an ion meter here, and as long as the pressure can be detected, for example, a Penning Gauge or a Pirani 14 200912020 gauge can be used. On the outer side in the radial direction of the first tubular member 1a, a ring-shaped first electromagnetic coil 23 capable of controlling the magnetic strength is provided so as to surround the side J of the j-th tubular member 10. Specifically, the i-th electromagnetic coil 23 is disposed coaxially with the i-th cylinder member 10 and is positioned between the intermediate electrode and the second cover member 18 in the Z-axis direction. Further, a current is passed through the first electromagnetic coil 23, and a predetermined positive voltage is applied to the intermediate electrodes 19 and 20, whereby the discharge space of the plasma gun i is used, and the coil of the first neodymium coil 23 is used. The magnetic field and the electric field of the intermediate electrodes 19 and 2 形成 form a gradient of the magnetic flux density in the Z-axis direction. By the gradient of the magnetic flux density in the Z-axis direction, the charged particles of the plasma are configured to move in the z-axis direction while moving from the cathode 15 in the z-axis direction within the discharge *=11. The plasma of the aggregate of the charged particles is entangled into a columnar electric group of a substantially uniform density distribution (hereinafter referred to as cylindrical electric power and pulled toward the side of the sheet-like plasma deformation chamber 2 (refer to FIG. 2). 18, a through hole penetrating in the thickness direction (Z-axis direction) is provided, and the through hole constitutes a plasma outflow port 91. Further, the second cover member 设有 is airtightly provided with a blocking_30 to control the electric Whether or not the flow is discharged or not. The set 30 has a driver 32 for opening and closing the electric outlet opening and closing member 91, and the opening and closing member 31 is moved in parallel to the opening surface of the electric 91. The structure of the opening and closing member 31 is sealed with a plasma discharge port. At 91 o'clock, the discharge space is kept in the oxygen-tight bear in -t] 11. The door device 30 in the too-sever state is composed of a valve, and the opening and closing member is constituted by a valve body thereof, and the driver 32 is driven by the valve body thereof. The device (electromagnetic drive 15 200912020 device, cylinder, etc.) is constructed. In FIG 1 and FIG 2, a drive actuator device. ... and shows the valve body 32 constituting the driver
片狀電衆變形室2,電襞流士 a構件U，以氣密方式連接 軸方向尺寸）及寬度 口 91 5又汁成其形狀或高度（YSheet-shaped electric deformation chamber 2, electric turbulence a member U, connected in a gas-tight manner, axial dimension) and width 91 5 is juiced into its shape or height (Y
通過。 又 向尺寸）可適當地供圓柱電漿CP 片狀電漿變形室2具有 第2筒構件41的内部筒構件…藉由 ^ P 1而形成輸送空間45。第2 «槿 件41之一端部（電聚搶 帛2诗構 山μ 乂第3蓋構件42密封，另 一私部，以第4蓋構件43宓 另 M ^ ^ 山、。在第3蓋構件42的中心 :=貝穿孔44,該貫穿孔44與設置在第2蓋構件以之 電…L出口 91連通’又’以同軸於第1筒構件10(共有中 心軸）之方式而設置第2筒禮杜/】 ㈣件41。又，在第4蓋構件43 的中心心形成有延伸於X軸方向之第】狹孔4“ 在第2筒構件41的外側，以挾持第2筒構件叫正確 而吕係輸运空Μ 45)於其間且使彼此同極（此處4 N極）對 向之方式’設有-對方形的永久磁鐵48、48。一對永久磁 鐵48、48，係設置成於γ轴方向受磁化、延伸於X轴方 向。又，在永久磁鐵48之靠近陰極丨5側，以圍繞第2筒 構件41之周邊之方式而設有環狀的成形電磁線圈π。^ 者，成形電磁線圈47被通以電流，產生其相位係以陰極15 側作為S極，以後述之陽極74側作為Ν極之中心磁場。 又，使電流流經成形電磁線圈47，藉由形成於片狀電 漿變形至2之輸送空間45之線圈磁場與利用一對永久磁 16 200912020 鐵48、48在輪送空間45形成之磁鐵磁場的相互作用 圓柱電襞cp在片狀電聚變形室2的輸送空間45移動於z 轴方向。在此期間’圓柱電锻CP變形成為沿XZ平面擴展 之均勻片狀之電製（以下稱片狀電漿）sp。經此方式而變带 之片狀电漿SP，透過介設於第2筒構件41之第4蓋構件 43與成膜室3之側壁間之狹縫狀的第i頸部5〇， 成膜室3。 a八 再者’基於較易於使永久磁鐵48等之磁力作用於圓桎 電漿的考量，第2错接· > /11 y 问構件41係以玻璃或SUS等非磁性材 :構成。X’片狀電漿變形室2,藉適當之手段而與電漿 :1形成電氣絕緣。再者，第1狹孔“之高度及寬度， 的::於變形之片狀電· sp的寬度即可可設計成適當 3構St室3,具有以Y軸方向之軸為中心之圓筒狀的第 —以及以Ζ軸方向之軸為中心之圓筒狀的第4筒 〜2第3同構件51係以非磁性體（例如不鏽鋼）構成。 ::筒構件Μ之一端部，以第5蓋構件Μ密封，又，另 ，，以第6蓋構件54密封。再者，藉由第3筒構件Η 且容待後述。 間55。又，有關第4筒構件52 :第3筒構件51之片狀電毅變形室2附近 :部：成有延伸…方向之第2狹孔(電裝流入 ^該第2狹孔92’以氣密方式設有筒狀之第i頸部5〇， 使片狀電漿變形室2與成膜室3之内部空間形成連續。如 17 200912020 所示，電浆流入口 92透過片狀電㈣形室2而 出口 91連通。再者，第1頸部心高度轴方向内= 寸）及長度（z軸方向内部尺寸）以及寬度（χ轴方向内 寸）係°又计成硓適當的使片狀電漿SP通過。又， …高度及寬度與上述第丨狹孔46相同。藉此，可： 止未構成片狀電襞SP之多餘的氯離子（Ar+)與 成膜室3。 哥入 又’在第3筒構件51的内部，以隔著片狀電漿讣而 對向之方式，配設有基板57與作為成膜材料之靶61。美 板57係由基板保持具58所保持，基板保持具u且有二 持具部…與支撐部58b。支律部58b，係以氣密且能滑動 自如的方式貫穿第5蓋構件53,而與第2驅動機構59連 接。又，支撐部58b係構成為可移動於γ軸方向。又，基 板保持具58，藉適當的配線而與第2偏壓電源6Q之負極 形成電氣連接，第2偏壓電源6〇，對於保持具部5仏施加 相對片狀電漿sp為負之偏壓。再者，基板保持具58之支 撐部58b與第5蓋構件53形成絕緣。 另一方面，靶61被靶保持具62所保持，該靶保持具 62，具有保持具部62a與支撐部621^支撐部62b，以氣密 且能滑動自如之方式而貫穿第6蓋構件54,與第ι驅動機 構63連接。又，支撐部62b係構成為可移動於丫軸方向。 再者，靶保持具62,藉適當之配線與第丨偏壓電源64之 負極形成電氣連接，第i偏壓電源64，對於保持具部 施加相對片狀電漿SP為負之偏壓。再者，靶保持具62之 200912020 支撐部62b與第6蓋構件54形成絕緣。又，第i驅動機 構63及第2驅動機構59可使用公知的驅動機構，例如氣 缸等。 再者，在第3筒構件51之成膜空間55之適當位置， 以氣捃方式而設有第2壓力檢測器56。第2壓力檢測器％ 係用以檢測成膜空間55的壓力，並將所測得之該壓力傳 至拴制裝置1 02。又，第2壓力檢測器56在此係使用離子 计&只要可檢測壓力，亦可使用例如潘寧真空計或皮冉尼 真二汁。又，此處之第2壓力檢測器56係設置在成膜空 間55，但並不侷限於此，亦可設置在輸送空間c的適當 位置。 2閱65開閉之真空泵連接口 66。在真空泵連接σ 66，透 =當配管而與第2真空栗刚連接。藉由第2真空果 減壓：如渦輪分子泵)來抽成真空’成膜空間55快速地被 / 可進行濺鍍製程的程度之真空度。 在第3筒構件51之外部，可控制磁力強度之第2電磁 筒構件：之V面電磁線圈68，配設成彼此成對且圍繞第3 被通電成相異極二= 磁線圈68為s極)成為對向。將m;:極：第3電 67及第3電磁線圈 磁第2電磁線圈by. Further, the cylindrical plasma CP sheet-like plasma deformation chamber 2 is provided with the inner cylindrical member of the second tubular member 41. The transport space 45 is formed by ?P1. The second part of the first part of the 槿 41 ( ( 诗 诗 诗 诗 诗 诗 诗 诗 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂Center of 42: = perforation 44, the through hole 44 is provided in the second cover member to be electrically connected to the ... L outlet 91 and is disposed coaxially with the first tubular member 10 (shared central axis). In the center of the fourth cover member 43, a slit 7 extending in the X-axis direction is formed on the outer side of the second tubular member 41 to hold the second tubular member. Correctly, the Lv system transports the space 45) in the same way that they are opposite to each other (here 4 N poles), the pair of square permanent magnets 48, 48. A pair of permanent magnets 48, 48, The y-axis direction is magnetized and extends in the X-axis direction, and the annular shaped electromagnetic coil π is provided around the cathode 丨 5 side of the permanent magnet 48 so as to surround the periphery of the second tubular member 41. ^, the forming electromagnetic coil 47 is energized, and the phase thereof is such that the cathode 15 side is the S pole, and the anode 74 side described later is the central magnetic field of the drain. And causing a current to flow through the forming electromagnetic coil 47, by a coil magnetic field formed in the conveying space 45 in which the sheet-like plasma is deformed to 2, and a magnetic field of the magnet formed in the wheeling space 45 by a pair of permanent magnets 16 200912020 iron 48, 48 The interaction cylindrical electric 襞 cp moves in the z-axis direction in the conveying space 45 of the sheet-like electropolymerization deformation chamber 2. During this period, the cylindrical electric forging CP is deformed into a uniform sheet-like electric system extending along the XZ plane (hereinafter referred to as a sheet shape). a plasma-like slurry SP which is slid in this manner, passes through a slit-shaped i-th neck interposed between the fourth cover member 43 of the second tubular member 41 and the side wall of the film forming chamber 3 5〇, film forming chamber 3. a 八再者' is based on the consideration that it is easier to apply the magnetic force of the permanent magnet 48 to the round 桎 plasma, and the second wrong connection > /11 y asks the member 41 to be glass or SUS Non-magnetic material: composition. X' sheet-like plasma deformation chamber 2, by appropriate means to form electrical insulation with plasma: 1. Furthermore, the height and width of the first slot ":: in deformation The width of the sheet-shaped electric sp can be designed into an appropriate three-frame St-chamber 3, and has a cylindrical shape centered on the axis of the Y-axis direction. Ζ axis and the axis of the center of a fourth cylindrical tube member 51 with the third ~2-based non-magnetic material (e.g., stainless steel) composed. One of the ends of the tubular member Μ is sealed by the fifth cover member 又 and, in addition, sealed by the sixth cover member 54. Furthermore, the third cylinder member will be described later. 55. Further, the fourth tubular member 52 is in the vicinity of the sheet-like electric deformation chamber 2 of the third tubular member 51: a second slit having a direction extending in the direction of the electrical outlet (the electrical outlet flows into the second slit 92' The cylindrical manner is provided with a cylindrical i-th neck 5〇, which makes the sheet-like plasma deformation chamber 2 and the inner space of the film forming chamber 3 continuous. As shown in 17 200912020, the plasma inflow port 92 passes through the sheet-shaped electric (four) shape. The chamber 2 is connected to the outlet 91. Further, the first neck is in the direction of the height axis of the first neck, and the length (the inner dimension in the z-axis direction) and the width (the inner dimension in the x-axis direction) are also counted as appropriate. The plasma SP passes. Further, ...the height and the width are the same as those of the first slit hole 46 described above. Thereby, excess chlorine ions (Ar+) and the film forming chamber 3 which do not constitute the sheet-shaped electrode SP can be stopped. In the inside of the third tubular member 51, a substrate 57 and a target 61 as a film forming material are disposed so as to face each other with a sheet-shaped plasma paste interposed therebetween. The US plate 57 is held by the substrate holder 58, which has a holder holder u and a support portion 58b. The branch portion 58b penetrates the fifth cover member 53 in an airtight and slidable manner, and is connected to the second drive mechanism 59. Further, the support portion 58b is configured to be movable in the γ-axis direction. Further, the substrate holder 58 is electrically connected to the negative electrode of the second bias power source 6Q by an appropriate wiring, and the second bias power source 6A is negatively biased to the holder portion 5仏 with respect to the sheet-shaped plasma sp. Pressure. Further, the support portion 58b of the substrate holder 58 is insulated from the fifth cover member 53. On the other hand, the target 61 is held by the target holder 62, and has a holder portion 62a and a support portion 6221 supporting portion 62b, and penetrates the sixth cover member 54 in an airtight and slidable manner. Connected to the 1st drive mechanism 63. Further, the support portion 62b is configured to be movable in the z-axis direction. Further, the target holder 62 is electrically connected to the negative electrode of the second bias power source 64 by appropriate wiring, and the i-th bias power source 64 applies a negative bias to the holder portion with respect to the sheet-like plasma SP. Further, the support portion 62b of the target holder 62 is insulated from the sixth cover member 54. Further, the i-th drive mechanism 63 and the second drive mechanism 59 can use a known drive mechanism such as a cylinder or the like. Further, a second pressure detector 56 is provided in an airtight manner at an appropriate position of the film formation space 55 of the third tubular member 51. The second pressure detector % is used to detect the pressure of the film forming space 55, and the measured pressure is transmitted to the tanning device 102. Further, the second pressure detector 56 uses an ion meter & here, as long as the pressure can be detected, for example, a Penning vacuum gauge or a Pinot Noir. Here, the second pressure detector 56 is provided in the film forming space 55. However, the present invention is not limited thereto, and may be provided at an appropriate position of the transport space c. 2 Read 65 open and close vacuum pump connection port 66. Connected to the vacuum pump σ 66, transparent = just connected to the second vacuum pump when piping. The degree of vacuum is vacuumed by the second vacuum decompression: such as a turbomolecular pump, to the extent that the film forming space 55 is quickly/can be subjected to a sputtering process. Outside the third tubular member 51, the second electromagnetic cylinder member capable of controlling the magnetic strength: the V-shaped electromagnetic coils 68 are disposed to be paired with each other and energized around the third to form a different pole 2 = the magnetic coil 68 is s Extremely) becomes the opposite. m;: pole: third electric 67 and third electromagnetic coil magnetic second electromagnetic coil
左右），仫从a 成之線圈磁每（例如l〇G至300G 移動於2轴方、Γ鏡磁場，對於在成膜室3之成膜空間55 向之片狀電漿SP，可適當地抑制其往寬度方 19 200912020 向的擴散，以對Η山 又，第3、 電漿SP之形狀予以整形。 成有延伸於X 51在陽極74側之周面的中央部，形 以氣密方式設有^之第3狹孔69。在該第3狹孔69中， 與第4筒構件52之^第2頸部7G，以使第3筒構件51 ^ ^ ^ Γγ . 部空間形成連續。再者，第2頸部70 之同度（Υ軸方向内 印轴方向内部二寸）及長度㈣方向内部尺寸）及寬 ί \ 當使片狀電装SP =第』頸部5〇同樣地設計成可適 與上述第！狹孔二狹孔69之高度及寬度’ 机札46同樣構成。 4二構件Μ係以非磁性體（例如不鏽鋼）構成。在第 “牛之-端部(陰極15側)，以第 在該第7蓋構件71 人级节央3又有第4狹孔72。又， 7盍構件71，以氣密方試設置第2頸部7〇以與第4 々 者第4狹孔72之高度及寬度，與上述 第1狹孔46同樣構成。 又’在第4筒構件52之另一端部，以密封其内部空間 之方式而氣密設有第8蓋構件”。第8蓋構件73在靠近 陰極15側之主面，設有陽極74。陽極以係藉由切換開關 29而選擇性連接第！主電源％或第2主電源”。 另一方面’第8蓋構件73之離陰極15較遠側之主面， 配置有以陽極74側作為s極、以大氣側作為N極之永久 磁鐵75。因此，藉由永久磁鐵乃的n極出、s極入之沿 著xz平面的磁力線，朝向陽極74之片狀電漿sp被收欽 於寬度方向（X軸方向）’片狀電漿8?的荷電粒子被適當地 20 200912020 回收至陽極74。 再者，本實施形態中，在成膜室3 n 您第3筒構件51之 ΧΖ平面的截面’係以圓形為說明 寸π於々a 1一再並不侷限於此， 亦可係多角形等；第4筒構件52之χγ me 1 β ΛΥ千面的戴面，係以 圓形為其說明例’但其並不侷限於此’亦可係多角形等。 其次，說明控制裝置1〇2。 rLeft and right), 仫 from a coil magnet (for example, l〇G to 300G moves on the 2-axis side, the Γ mirror magnetic field, and the sheet-like plasma SP in the film formation space 55 of the film formation chamber 3 can be appropriately The diffusion to the width of the width 19 200912020 is suppressed, and the shape of the third and the plasma SP is shaped for the mountain, and the central portion of the circumferential surface of the side of the anode 74 is formed in an airtight manner. The third slit 69 is provided. In the third slit 69, the second neck member 7G of the fourth tubular member 52 is formed so that the third tubular member 51 ^ ^ Γ γ is formed continuously. Furthermore, the same degree of the second neck portion 70 (two inches inside the inner axis of the y-axis direction) and the inner dimension of the length (fourth direction) and the width ί are similarly designed when the sheet-shaped electric device SP = the third neck portion 5 〇 Cheng Keshi and the above mentioned! The height and width of the slits 69 are the same. The four-component lanthanum is composed of a non-magnetic material (for example, stainless steel). At the "the cow's end" (the cathode 15 side), the fourth seventh member 71 has a fourth narrow hole 72. Further, the 7-inch member 71 is set to be airtight. The neck portion 7 is formed in the same manner as the first slit 46 in the height and width of the fourth slit 72 of the fourth member. Further, the other end portion of the fourth tubular member 52 is sealed to the inner space thereof. The eighth cover member is airtightly provided. The eighth cover member 73 is provided with an anode 74 on the main surface close to the cathode 15 side. The anode is selectively connected by switching the switch 29! On the other hand, the main surface of the eighth cover member 73 on the far side from the cathode 15 is provided with a permanent magnet 75 having the anode 74 side as the s pole and the atmosphere side as the N pole. Therefore, the sheet-like plasma sp that is directed toward the anode 74 is received in the width direction (X-axis direction) by the magnetic field lines along the xz plane of the n-pole of the permanent magnet and the s pole, and the sheet-like plasma 8 is taken in the width direction (X-axis direction). The charged particles are recovered to the anode 74 as appropriate 20 200912020. Further, in the present embodiment, the cross section of the plane of the third cylinder member 51 in the film forming chamber 3 n is indicated by a circle. Further, a 1 is not limited thereto, and may be a polygonal shape or the like; the χγ me 1 β ΛΥ thousand face of the fourth tubular member 52 is exemplified by a circular shape, but it is not limited thereto. It is also possible to use a polygonal shape, etc. Next, the control device 1〇2 will be described.
K 控制裝置1〇2,係以微電腦等電腦構成 所構成之運算處理部、記憶體等 笨夕as - μ a 每取之儲存部、顯示器 荨之顯不部、具曰盾功能之時鐘部 部（皆夫圖+、.富曾* 硬滋寻之#作輸入 的㈣程二 ，係讀取儲存在健存部之既定 以進行有關成獏裝置⑽之各種控 運异處理#，係對儲存於儲 作輸入部之資料進行處理。 之貝枓或來自刼 其次，邊參照圖3及圖 裝置_的動作。 來說月本實施形態1之成膜 :3係在圖i所示成膜裝置1〇〇 圖-的儲存部所儲存之成之未 略内容之流程圖。圖4係在二:的運轉開始程式的概 裝置1〇2之未圖示 ’、成膜裝置⑽之控制 運棘π + p所儲存之成膜裝置1〇〇的反覆 運轉程式的概略内容之·β。 反覆 首先，邊參照圖3 作。 以説明成膜裝置100之運轉開始動 控制裝置1 02的運曾走 聚流“91關閉的指：(牛1部’對擋門機構30發出將電 7 V騾S1)。藉此，使擋門機構3〇 21 200912020 的驅動器32作動，由開閉構件31關閉電漿流出口 9 次，運算處理部對第1排氣閥及第2排氣閥21、66分別 發—出將閥開度開至100%的指令（步驟S2)，接著，對第工 及弟2真线1〇3、1()4發出作動開始指令（步驟叫 此，使電漿搶卜片狀電漿變形室2、及成膜室3 減壓。 其次’運算處理部從第1及第2壓力檢測器28、56取 得電襞搶U成膜室3内的壓力值資tfipi、p2(步驟岣， 並與儲存在儲存部之既定壓力值進行比較（步驟处此處， 電漿槍1之既定壓力值，係指可從電製搶工之陰極15產 ，之電聚搶1内的壓力值…在成膜室3之既定壓 :值，係因成膜之材料等的不同而柄[乃是經預先實驗 =!得之值。此處之電襞搶1之既定壓力值，係設定為 又’當運算處理部在步驟S4所取得之壓力值 ^既定壓力值（高於既定壓力值）時，則回到㈣S :步驟…直到壓力值P1、p2達到既定壓力值為止。 當壓力值Μ達到既定壓力值時，則前進 2驟S6。又’在此雖係檢測成膜室3的壓力值， :限於此，亦可檢測片狀電浆變形室2的壓力值來進行判 理部，係對未圖示 ，將氬氣供應至片 在步驟S6，控制裝置1〇2的運算處 之氬氣供應裝置發出氬氣供應開始指令 狀電漿成膜裝置101内。 22 200912020 接著’運算處理部發出使切換開關29與第2主電源27 之正極連接的指令(步驟S7)，其次，對第2主電源27及 片狀電漿成膜裝置1〇1發出作動指令(步驟s8)。藉此，從 第2主電;原27將既疋之負電壓（例如—繼v)施加於電衆搶 (正確而。係、陰極i 5)。此時，位在陰極1 $與陽極74間 的空間（放電空間u、輸送空間45、及成膜空間55)雖被 開閉構件3 1所遮蔽’但在辅助陰極13則開始輝光放電。 :案發明人認為，此係因為陰極15與中間電極Η或中間 電極2〇間之電位差而產生輝光放電。 又，輔助陰極13之前姐邱八从 合心 』鳊邛刀的溫度上升後，主陰極14 會文到此熱能之加熱而成高况。 所輸出的電壓值成為既定二 由帛2主電源27 之電愿# η (例如—loov)，而取得穩定 出之第？… ρ從電壓檢測器24取得檢測 主電源27的輪出電麼值 存部之值（步驟S9)，與儲存在儲 之既疋閾值進行比較（步驟S10)。 當步驟S9所取得之電壓值 步驟別，重複實施步驟89及、无;^值時，則回到 閾值、呈@+ 驟s1 〇，直到電壓值低於 呈現穩疋之電壓值為止。 閾值而方面，當電壓值低於 :以之電屢值時’則前進至步驟川。 在步驟SU，控制裝置1〇2 30發出使電漿流出”i開放之，處理部對擋門機構 3〇的驅動器32 曰不。藉此，使擋門機構 t …動’由開閉構件31將電裝流出口 ”開 其次，運算處理部發出使切換開關29與第i主電源％ 23 200912020 之正極連接的指令(步驟Sl2)’接著’對第】主電源％發 出作動指令(步驟S13)。藉此，由第】主電源26將-60〜 — 80V之電壓施加於電聚搶i(正確而言係陰極⑺以使既 定電流（例如50A)流動。：；鱼而，.富皆老„ 勒進而，運异處理部取得由電壓檢 1 〃 ’則出之第1主電源26的輸出電壓值(步驟S 14)， =存在儲存部找定間值（―術〜—卿）進行㈣（步驟 田在4 SH所取得之電壓值高於既定間值時，則回 到步驟S 14，#菇眘#此挪 j 重稷實鉍步驟S14及步驟Sl5，直 低於既定閾值而成穩定 ^ 电魘值為止。另一方面，告雷懕 值低於既定閾值而成穩定/ 與陽極^之間有進行電弧放電f Η判斷為在陰極15 二次二對片狀電聚成膜裝置1〇1發出成膜開始指令(步 驟8外在基板57開始成膜，結束本程式。 接著，說明成膜裝置100的重複運轉。 首先，控制裝置102的運箕虚棟加 如，從操作輸入部輸入成膜動作處;^藉由適當的手細 .战膜動作已結束之訊息等），以忒切 成膜動作已經結束（步驟S21)。 < 其次’運算處理部發出使 的正極連接之指示(步驟S22)，其二與2?正邮 片狀電漿成膜裝置1〇1發出:t 電源27及 4^ π ^ ^作動指令（步驟S23) 〇又，對 :此 發出將電漿流出口 91關閉的指令(步驟S24) 糟此’使播門機構30之，驅動 ：S24)。 關閉電激流出口 91。 乍勤由開閉構件31 24 200912020 接著，控制裝置102的運算處理部，對第i排氣間21 發出使閥開度達的指令（步驟奶），使電漿搶i内之 放電空間11成為可维拉經出也+ 又α』，、隹符輝先放電之程度之真空狀態。如 此’電滎搶i内的壓力成為001〜lopa左右。又，當將100ν 左右（90 11GV)的電壓施加於陰極15與中間電極19、⑼之 間，則在陰極15與中間電極19、2〇間流動的電流，會低 至數安培（Π)Α卩下），因此無法達到電弧放電而維持在輝 光放電的狀態。 又，運算處理部發出將對下-基板57進行成膜之準備 指令(步驟S26)。具體而言’係發出指令而使第2真空泵ι〇4 的作動彳T止。之後，作業人員將輸送空間及成膜空間55 ’’大氣開放’取出已成臈之基板57並將新的基板57保持 於基板保持具58，且視需要更換乾61。又，作業人員將 已作好適當準備之訊息輸人控制裝置Η%例如，按壓準備 完成按鈕等）。The K control device 1〇2 is composed of a computer such as a microcomputer, and is composed of an arithmetic processing unit and a memory. The storage unit, the storage unit, the display unit, the display unit, and the clock unit. (All of them are +, . Fu Zeng* hard to find # (for the input) (4) Cheng 2, read and store in the health department to carry out the various control devices (10) The data stored in the input unit is processed. The operation of FIG. 3 and the device _ is the same as that of the device. The film formation of the first embodiment: 3 is the film forming device shown in FIG. 1 is a flow chart of the contents of the storage unit stored in the storage unit. Fig. 4 is a schematic diagram of the operation start program of the second: (1), and the control of the film forming apparatus (10). The outline of the repetitive operation program of the film forming apparatus 1 所 stored in π + p is β. The first step is to refer to Fig. 3 to explain the operation of the film forming apparatus 100. Convergence "91 closed finger: (1 part of the cow 's to the door mechanism 30 will send electricity 7 V 骡 S1). The actuator 32 of the door mechanism 3〇21 200912020 is actuated, and the plasma discharge port is closed nine times by the opening and closing member 31, and the arithmetic processing unit issues the valve opening degree to the first exhaust valve and the second exhaust valve 21, 66, respectively. Open to 100% of the instruction (step S2), and then issue an actuation start command to the first and second brothers' lines 1〇3, 1()4 (the step is called to make the plasma grab the sheet-like plasma deformation chamber 2 And the film forming chamber 3 is depressurized. Next, the arithmetic processing unit obtains the pressure values tfipi and p2 in the U film forming chamber 3 from the first and second pressure detectors 28 and 56 (step 岣, and storage) The predetermined pressure value of the storage unit is compared (at the step here, the predetermined pressure value of the plasma gun 1 refers to the pressure value which can be produced from the cathode 15 of the electric system, and the pressure value within the electro-convergence 1 is formed. The predetermined pressure of the chamber 3: the value is due to the difference in the material of the film formation, etc. [is the value obtained by the pre-experimental test!! Here, the predetermined pressure value of the electric pick 1 is set to be When the pressure value obtained in step S4 is a predetermined pressure value (higher than a predetermined pressure value), the processing unit returns to (4) S: step... until the pressure values P1, p2 reach When the pressure value Μ reaches the predetermined pressure value, the process proceeds to step S6. In addition, although the pressure value of the film forming chamber 3 is detected here, it is limited thereto, and the sheet-like plasma deformation chamber 2 can also be detected. The pressure value is used to perform the argon gas supply device, and the argon gas supply device at the operation of the control device 1〇2 is supplied with the argon gas to the sheet (not shown). 22 200912020 Next, the 'calculation processing unit issues a command to connect the changeover switch 29 to the positive electrode of the second main power supply 27 (step S7), and secondly, to the second main power supply 27 and the sheet-like plasma film forming apparatus 1〇1. Actuate the instruction (step s8). Thereby, from the second main power; the original 27 applies the negative voltage (e.g., following v) to the electric consumer (correct, system, cathode i 5). At this time, the space between the cathode 1 $ and the anode 74 (the discharge space u, the transport space 45, and the film formation space 55) is shielded by the opening and closing member 31, but the glow discharge is started at the auxiliary cathode 13. The inventor believes that this is because of the potential difference between the cathode 15 and the intermediate electrode or the intermediate electrode 2, a glow discharge is generated. In addition, before the auxiliary cathode 13 is sent to the center of the heart, the main cathode 14 is heated to the high temperature. The output voltage value becomes the predetermined two due to the electric power # η of the main power supply 27 (for example, -loov), and the stable one is obtained. The value ρ is obtained from the voltage detector 24 to detect the value of the wheel-out power value of the main power source 27 (step S9), and is compared with the stored threshold value (step S10). When the voltage value obtained in step S9 is not repeated, step 89 is performed repeatedly, and when there is no value, the threshold value is returned to @+ s1 〇 until the voltage value is lower than the stable voltage value. In terms of the threshold, when the voltage value is lower than: the electric value is repeated, the process proceeds to the step. At step SU, the control device 1 〇 2 30 issues the discharge of the plasma "i", and the processing unit does not align the actuator 32 of the door mechanism 3 。. Thereby, the door mechanism t is moved by the opening and closing member 31 Next, the arithmetic processing unit issues a command to cause the changeover switch 29 to be connected to the positive electrode of the i-th main power source % 23 200912020 (step S12) to perform an operation command to the first main power source % (step S13). Thereby, a voltage of -60 to 80 V is applied to the electro-convergence by the first main power source 26 (correctly, the cathode (7) is caused to flow a predetermined current (for example, 50 A). Further, the transfer processing unit obtains the output voltage value of the first main power supply 26 that is generated by the voltage check 1 步骤 ' (step S 14), and = the storage unit search interval value ("surgery ~ - qing" is performed (4) ( When the voltage value obtained by the step field in 4 SH is higher than the predetermined interval value, the process returns to step S14, and the step S14 and step S15 are repeated, and the step S14 and the step S15 are stabilized directly below the predetermined threshold. On the other hand, the Thunder value is lower than the predetermined threshold and stabilized / there is arc discharge between the anode and the anode ^ f Η judged as the second two pairs of sheet-shaped electropolymerization film forming device at the cathode 15 (1) A film formation start command is issued (step 8 starts the film formation on the substrate 57, and the program is terminated. Next, the repeated operation of the film formation apparatus 100 will be described. First, the operation of the control device 102 is increased, and input from the operation input unit is input. Film formation action; ^ by appropriate hand fine. The film action has ended, etc.) The processing has been completed (step S21). <Next> the arithmetic processing unit issues an instruction to connect the positive electrode (step S22), and the second and second positive-grain plasma plasma forming devices 1〇1 emit: t power supply 27 and 4^ π ^ ^ actuation command (step S23) 〇 again, this: the command to close the plasma outflow port 91 (step S24) is omitted. [Make the door opening mechanism 30, drive: S24). Close the electric outlet 91. The commissary opening and closing member 31 24 200912020 Next, the arithmetic processing unit of the control device 102 issues a command (step milk) for causing the valve opening degree to the i-th exhaust chamber 21, so that the plasma discharge chamber 11 is discharged. It becomes the vacuum state of the degree that the Vella can also be discharged by + and α, and 隹 辉 先 先 先 先 。 。 。 。 。 。 。 。 。 。 。 。 。 。 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空Between the cathode 15 and the intermediate electrodes 19 and (9), the current flowing between the cathode 15 and the intermediate electrodes 19 and 2 is as low as several amps, so that the arc discharge cannot be maintained and the glow is maintained. The state of the discharge. Further, the arithmetic processing unit issues the lower-substrate 57 The film preparation command (step S26). Specifically, the command is issued to stop the operation of the second vacuum pump ι4. Thereafter, the operator removes the conveyance space and the film formation space 55'' atmosphere. The substrate 57 of the crucible is held by the substrate holder 58 and the stem 61 is replaced as needed. Further, the operator inputs the message that has been properly prepared, such as a control button (for example, pressing the preparation completion button, etc.) .
藉此，運算處理部對第i及第2排氣閱2丄、66發出使 Θ開度為100%的指令（步驟S27)，接著對第2真空泵 f出作動開始指令(步驟叫藉此，使電聚槍i、片狀電 漿變形室2、及成膜室3的内部減壓。 …其次，運算處理部，由第i及第2壓力檢測器28、56 取得包漿搶1及成膜室3内的壓力值ρι、ρ2之資訊（步驟 9)與儲存在儲存部之既定壓力值進行比較（步驟s3 〇)。 又，t運算處理部在步驟S29所取得之壓力值pl、p2未 達既定壓力值（咼於既定壓力值）時，則回到步驟S29而重 25 200912020 衩κ施步驟S29及步驟. 壓力… ^驟830,直到壓力值P卜P2達到既定 i刀值為止。另一太品 λ, _ 俏日车^ 面，當Μ力值P1、P2達到既定塵力 值時，則刖進至步驟S3 j。 在步驟S 3 1，批制姑班，Λ 工制凌 2的運算處理部，對擋門機 構30發出使電漿流出口 槿30 M n 開放之私示。藉此，使擋門機 構3 0的驅動器3 2作叙 動，由開閉構件3 1將電漿流出口 91 開放。 又’運异處理部，對知祕 十刀換開關29發出使其輸出端子與 第 主电源26·的負極遠接 遇接之私令（步驟S32)，苴次，對第 1主電源26發出作動指令（步驟s川益人對第 (梦驟S33)。藉此，由第1主電 源26對電漿搶丨（正確而令 。係陰極1 5)施加~ 60--80V的 電壓以使既定電流（例如 的 J戈50A)〜動。其次，運算處 取得電壓檢測器24所測 r半陇cu、 田夂弟1主電源20的輸出電壓值 (v驟S34)，與儲存在儲 之既疋閾值（一60V〜一8〇v、j隹 行比較（步驟S35)。 ）進 當在步驟S34所取 所取侍之電壓值高於既定間 到步驟咖’重複實施步驟咖及步驟奶 = 低於既定間值成為穩定之電麗值為止。另一方面，= 之電壓值低於既定閒佶&丄 田取传 陰極15與陽極74㈠!斷為在 τ ^ <間有進行電弧放電。 二著::::ΓΓ101發出成膜開始指令(步 式。藉此，在片狀電漿成膜裝置101 内使基板57成膜。 H ιυι 士所示在本實施形鲅]之杰歧驻里1ΛΛ w 1之成膜裝置1 〇〇，係由開閉 26 200912020 構件30將電漿流出口 91關閉’藉此，可使電漿搶i内（放 電空間11)以獨立於其他空間（輸送空間45及成膜空間55) 之方式而保持真空狀態，且，將電衆搶1内的壓力設為 〇.〇1〜l.OPa左右，當將100V左右（90〜11〇v)的電壓施加於 陰極15與中間電極19、20之間，則在陰極15與中間電 極19、20之間會發生輝光放電，又，此時，在陰極15與 中間電極1 9、20之間流動的電流會低至數安培（丨〇a以下）， 因而無法達到電弧放電而維持在輝光放電的狀態。又，由 於並非由電弧放電而是在輝光放電的狀態來維持電漿，因 此無須另外在放電空間丨丨設置陽極，可謀求成膜裝置ι〇〇 的低成本化及成膜裝置1〇〇之製造步驟簡化。再者，在維 持電弧放電之情形，陰極15係曝露於高溫，而有可能縮 短陰極壽命’但在本實施形態之成膜裝置100，係維持在 輝光放電狀態，因而不會使陰極15曝露在高溫，而能延 長陰極15的壽命，使成膜裝置1〇〇的維護簡化，且實現 更低成本化。 再者，在本發明之實施形態，係使電漿成膜裝置内成 真空狀態而進行成膜，但亦可將反應性氣體導入成膜室， 使用該氣體與成膜材料的反應物而將基材成膜。又，在上 屯態係藉由2個主電源與切換開關來進行輝光放 电與電弧放電的切換，但並不侷限於此，亦可使用丨個主 電源來進行輝光放電與電弧放電的切換。 曰根據上述說明，對熟悉此技藝人士而言，可瞭解本發 明之諸多改良或其他實施形態。因此’上述說明應被視為 27 200912020 僅係例示，其目的在於對熟悉此技藝人士提供實施本發明 之最佳开> 態。在不脫離本發明之精神的情況下，可實質變 更其構造及/或功能的詳細内容。 本發明之成膜裝置之使用方法，由於能謀求成膜裝置 之更低成本化及成膜裝置之製造步驟簡化而頗有效益。此 外，由於能有效率地連續在基板反覆成膜而頗有效益。 【圖式簡單說明】 圖1係本發明之實施形態丨之成膜裝置的構成之示竟 圃2係圖1所 開放後的狀態之示意圖， 圖3係圖1所示之成膜裝置之控制裝置之未圖示的 存部所儲存之片狀電装成膜裝置之控制程式：容 流程圖。 Ί谷 之未圖示的儲 略内容的流程 圖4係圖1所示之成膜裝置之控制裝置 存卩所儲存之成膜裝置之重複運轉程式之概 圖。 【主要元件符號說明】 電漿搶 : 片狀電漿變形室 成膜室 0 第1筒構件 28 200912020 11 放電空間 12 第1蓋構件 13 辅助陰極 14 主陰極 15 陰極 16 保護構件 17 窗構件 18 第2蓋構件 19 中間電極 20 中間電極 21 第1排氣閥 22 真空泵連接口 23 第1電磁線圈 24 電壓檢測器 25 容器 26 第1主電源 27 第2主電源 28 第1壓力檢測器 29 切換開關 30 擋門裝置 31 開閉構件 32 驅動器 41 第2筒構件 42 第3蓋構件 29 200912020 43 第4蓋構件 44 貫穿孔 45 輸送空間 46 第1狹孔 47 成形電磁線圈 48 永久磁鐵 50 第1頸部 51 第3筒構件 52 第4筒構件 53 第5蓋構件 54 第6蓋構件 55 成膜空間 56 第2壓力檢測器 57 基板 58 基板保持具 5 8a 保持具部 58b 支撐部 59 第2驅動機構 60 第2偏壓電源 61 靶 62 靶保持具 62a 保持具部 62b 支撐部 63 第1驅動機構 30 200912020 64 第1偏壓電源 65 第2排氣閥 66 真空泵連接口 67 第2電磁線圈 68 第3電磁線圈 69 第3狹孔 70 第2頸部 71 第7蓋構件 72 第4狹孔 73 第8蓋構件 74 陽極 75 永久磁鐵 91 電漿流出口 92 第2狹孔（電漿流入口） 100 成膜裝置 101 片狀電漿成膜裝置 102 控制裝置 103 第1真空泵 104 第2真空泵 CP 圓柱電漿 R1 電阻 R2 電阻 R3 電阻 SP 片狀電漿 31As a result, the arithmetic processing unit issues a command to open the first and second exhaust gas readings 66, 66 to 100% (step S27), and then issues an actuation start command to the second vacuum pump f. The electric condenser gun i, the sheet-like plasma deformation chamber 2, and the inside of the film forming chamber 3 are decompressed. Next, the arithmetic processing unit acquires the patina by the i-th and second pressure detectors 28 and 56. The information of the pressure values ρι and ρ2 in the membrane chamber 3 (step 9) is compared with the predetermined pressure value stored in the storage portion (step s3 〇). Further, the pressure values pl, p2 obtained by the t-calculation processing unit in step S29. If the predetermined pressure value is not reached (when the predetermined pressure value is reached), the process returns to step S29 and the weight is 25 200912020 衩 κ step S29 and the step. Pressure ... ^ 830 until the pressure value P P2 reaches the predetermined i-knife value. Another product λ, _ 俏 车 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The arithmetic processing unit of 2 issues a private display to the door opening mechanism 30 to open the plasma outflow port M 30 M n. Thereby, the driver 3 2 of the door stopper mechanism 30 is made In the swinging operation, the plasma discharge port 91 is opened by the opening and closing member 31. Further, the "transportation processing unit" issues a private connection between the output terminal and the negative electrode of the main power source 26·. In the next step (step S32), an actuation command is issued to the first main power source 26 (step s Chuanyi people's pair (dream S33). Thereby, the plasma is robbed by the first main power source 26 (correctly The cathode 1 5) applies a voltage of ~60--80V to make a predetermined current (for example, J Ge 50A) ~ move. Secondly, the calculation takes the voltage detector 24 to measure the r 陇 cu, the Tian 夂 1 main power supply 20 The output voltage value (v step S34) is compared with the threshold value stored in the storage (a 60V~8〇v, j隹 line (step S35)). The voltage value obtained in step S34 is high. Between the scheduled steps and the steps, the steps are repeated and the milk is below the established value to become a stable value. On the other hand, the voltage value of = is lower than the established leisure & The anode 74 (1) is broken to have an arc discharge between τ ^ < 2::::ΓΓ101 emits a film start command (step type. In the sheet-like plasma film forming apparatus 101, the substrate 57 is formed into a film. H υ υ 所示 在 在 所示 所示 成 成 成 成 成 成 成 1 1 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 The plasma outflow port 91 is closed, whereby the plasma can be kept in a vacuum state independently of the other spaces (the conveying space 45 and the film forming space 55), and the electric power is kept. The pressure in the grab 1 is set to about 〇1〇l.OPa, and when a voltage of about 100V (90~11〇v) is applied between the cathode 15 and the intermediate electrodes 19, 20, the cathode 15 and the intermediate electrode are provided. Glow discharge occurs between 19 and 20, and at this time, the current flowing between the cathode 15 and the intermediate electrodes 19, 20 is as low as several amps (below 丨〇a), so that the arc discharge cannot be maintained and maintained. The state of glow discharge. Further, since the plasma is not maintained by the arc discharge but in the state of the glow discharge, it is not necessary to separately provide the anode in the discharge space, and the cost of the film forming apparatus can be reduced and the film forming apparatus can be reduced. The manufacturing steps are simplified. Further, in the case where the arc discharge is maintained, the cathode 15 is exposed to a high temperature, and the cathode life may be shortened. However, the film forming apparatus 100 of the present embodiment is maintained in the glow discharge state, so that the cathode 15 is not exposed. The high temperature can extend the life of the cathode 15 and simplify the maintenance of the film forming apparatus 1 to achieve lower cost. Further, in the embodiment of the present invention, the film formation apparatus is vacuumed to form a film, but the reactive gas may be introduced into the film forming chamber, and the reaction product of the gas and the film forming material may be used. The substrate is formed into a film. Further, in the upper state, the switching between the glow discharge and the arc discharge is performed by the two main power sources and the changeover switch. However, the present invention is not limited thereto, and one of the main power sources may be used to switch between the glow discharge and the arc discharge. Many modifications and other embodiments of the invention will be apparent to those skilled in the <RTIgt; Accordingly, the above description is to be considered as merely an exemplification of the present invention, which is intended to provide a preferred embodiment of the invention. The details of construction and/or function may be substantially changed without departing from the spirit of the invention. The method of using the film forming apparatus of the present invention is advantageous in that the cost of the film forming apparatus can be reduced and the manufacturing steps of the film forming apparatus can be simplified. In addition, it is advantageous because it can efficiently form a film on the substrate continuously. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a configuration of a film forming apparatus according to an embodiment of the present invention, showing a state in which FIG. 1 is opened, and FIG. 3 is a control of a film forming apparatus shown in FIG. The control program of the chip-shaped electrical film-forming device stored in the storage unit (not shown) of the device: a flow chart. Flow of the contents of the storage of the film formation device shown in Fig. 1 is an outline of the repetitive operation program of the film forming apparatus stored in the control device of the film forming apparatus shown in Fig. 1. [Explanation of main component symbols] Plasma grab: Sheet-shaped plasma deformation chamber film forming chamber 0 First cylinder member 28 200912020 11 Discharge space 12 First cover member 13 Secondary cathode 14 Main cathode 15 Cathode 16 Protective member 17 Window member 18 2 cover member 19 intermediate electrode 20 intermediate electrode 21 first exhaust valve 22 vacuum pump connection port 23 first electromagnetic coil 24 voltage detector 25 container 26 first main power supply 27 second main power supply 28 first pressure detector 29 changeover switch 30 Door stop device 31 Opening and closing member 32 Actuator 41 Second tubular member 42 Third cover member 29 200912020 43 Fourth cover member 44 Through hole 45 Transport space 46 First narrow hole 47 Forming electromagnetic coil 48 Permanent magnet 50 First neck 51 3 tubular member 52 fourth tubular member 53 fifth cover member 54 sixth cover member 55 film forming space 56 second pressure detector 57 substrate 58 substrate holder 5 8a holder portion 58b support portion 59 second drive mechanism 60 second Bias power source 61 target 62 target holder 62a holder portion 62b support portion 63 first drive mechanism 30 200912020 64 first bias power source 65 second exhaust valve 6 6 Vacuum pump connection port 67 Second electromagnetic coil 68 Third electromagnetic coil 69 Third narrow hole 70 Second neck 71 Seventh cover member 72 Fourth narrow hole 73 Eighth cover member 74 Anode 75 Permanent magnet 91 Plasma outflow port 92 2nd slit (plasma inlet) 100 Film forming apparatus 101 Chip plasma forming apparatus 102 Control apparatus 103 1st vacuum pump 104 2nd vacuum pump CP Cylindrical plasma R1 Resistance R2 Resistance R3 Resistance SP Sheet plasma 31