AR093991A1 - Fuente de plasma - Google Patents

Fuente de plasma

Info

Publication number
AR093991A1
AR093991A1 ARP130104709A ARP130104709A AR093991A1 AR 093991 A1 AR093991 A1 AR 093991A1 AR P130104709 A ARP130104709 A AR P130104709A AR P130104709 A ARP130104709 A AR P130104709A AR 093991 A1 AR093991 A1 AR 093991A1
Authority
AR
Argentina
Prior art keywords
hollow
plasma source
anode
opening
plasma
Prior art date
Application number
ARP130104709A
Other languages
English (en)
Inventor
Krassnitzer Siegfried
Hagmann Juerg
Original Assignee
Oerlikon Trading Ag Tübbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading Ag Tübbach filed Critical Oerlikon Trading Ag Tübbach
Publication of AR093991A1 publication Critical patent/AR093991A1/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La presente se refiere a un dispositivo de generación de plasma que comprende una fuente de plasma con cuerpo hueco de fuente de plasma (1) y unidad de emisión de electrones (5) que permite emitir electrones libres en el cuerpo hueco de fuente de plasma, presentando el cuerpo hueco de fuente de plasma (1) una primera entrada de gas (7a) y una abertura de la fuente de plasma (10) que conforma una abertura hacia una cámara de vacío, así como un ánodo con cuerpo hueco de ánodo (2), conformando el cuerpo hueco de ánodo (2) una segunda entrada de gas (7b) y una abertura de ánodo (11) que forman una abertura hacia la cámara de vacío, y una fuente de tensión (8) cuyo polo negativo está conectado con la unidad de emisión de electrones (5) y cuyo polo positivo está conectado con el cuerpo hueco de ánodo (2) en el que el polo positivo de la fuente de tensión (8) además está conectado eléctricamente por medio de una primera resistencia de derivación (6a) con el cuerpo hueco de fuente de plasma.
ARP130104709A 2012-12-13 2013-12-13 Fuente de plasma AR093991A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012024340.5A DE102012024340A1 (de) 2012-12-13 2012-12-13 Plasmaquelle

Publications (1)

Publication Number Publication Date
AR093991A1 true AR093991A1 (es) 2015-07-01

Family

ID=49753120

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP130104709A AR093991A1 (es) 2012-12-13 2013-12-13 Fuente de plasma

Country Status (18)

Country Link
US (1) US10032610B2 (es)
EP (1) EP2932523B1 (es)
JP (1) JP6362615B2 (es)
KR (1) KR102106133B1 (es)
CN (1) CN105144338B (es)
AR (1) AR093991A1 (es)
BR (1) BR112015013749B1 (es)
CA (1) CA2894942C (es)
DE (1) DE102012024340A1 (es)
ES (1) ES2625301T3 (es)
HU (1) HUE033157T2 (es)
MX (1) MX346874B (es)
MY (1) MY174916A (es)
PL (1) PL2932523T3 (es)
PT (1) PT2932523T (es)
RU (1) RU2643508C2 (es)
SG (2) SG10201709310WA (es)
WO (1) WO2014090389A1 (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015101294A1 (de) * 2015-01-29 2016-08-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum Erzeugen eines Hohlkathodenbogenentladungsplasmas
DE102016213830B3 (de) * 2016-07-27 2017-12-07 Carl Zeiss Smt Gmbh Quell-Hohlkörper sowie EUV-Plasma-Lichtquelle mit einem derartigen Quell-Hohlkörper
GB2552711B (en) * 2016-08-05 2020-04-22 Hydrogen Universe Ltd Energy transfer method and system
WO2019246296A1 (en) * 2018-06-20 2019-12-26 Board Of Trustees Of Michigan State University Single beam plasma source
CH715878A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Magnetanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
CH715877A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Vakuumkammer mit Elektrodenanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
CN112899662A (zh) * 2019-12-04 2021-06-04 江苏菲沃泰纳米科技股份有限公司 Dlc制备装置和制备方法
GB2616150A (en) 2020-11-23 2023-08-30 Schlumberger Technology Bv Inflatable packer system for submersible well pump

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
DE3039850A1 (de) * 1979-10-23 1981-05-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Entladungsvorrichtung mit hohlkathode
JPS6011417B2 (ja) * 1979-10-23 1985-03-26 株式会社東芝 ホロ−カソ−ド放電装置
US4684848A (en) * 1983-09-26 1987-08-04 Kaufman & Robinson, Inc. Broad-beam electron source
DE3615361C2 (de) * 1986-05-06 1994-09-01 Santos Pereira Ribeiro Car Dos Vorrichtung zur Oberflächenbehandlung von Werkstücken
JPH01252781A (ja) * 1988-03-31 1989-10-09 Joshin Uramoto 圧力勾配型放電によるプラズマｃｖｄ装置
DE4029270C1 (es) * 1990-09-14 1992-04-09 Balzers Ag, Balzers, Li
CA2052080C (en) * 1990-10-10 1997-01-14 Jesse N. Matossian Plasma source arrangement for ion implantation
DE4216330A1 (de) * 1991-05-18 1992-11-19 Groza Igor Verfahren zur ionenplasmabehandlung insbesonders plasmabeschichtung in vakuum mittels verschleissfesten und dekorationsschichten
JPH05251391A (ja) * 1992-03-04 1993-09-28 Tokyo Electron Tohoku Kk 半導体ウエハーのプラズマ処理装置
CH687111A5 (de) * 1992-05-26 1996-09-13 Balzers Hochvakuum Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens.
US5358596A (en) 1992-07-02 1994-10-25 The Board Of Trustees Of The Leland Stanford Junior University Method and apparatus for growing diamond films
JP3365643B2 (ja) * 1992-07-06 2003-01-14 株式会社神戸製鋼所 イオン注入装置
DE4425221C1 (de) * 1994-07-16 1995-08-24 Dresden Vakuumtech Gmbh Verfahren und Einrichtung zum plasmagestützten Beschichten von Substraten in reaktiver Atmosphäre
JP3140636B2 (ja) * 1994-07-26 2001-03-05 日本電子株式会社 プラズマ発生装置
JPH09251935A (ja) * 1996-03-18 1997-09-22 Applied Materials Inc プラズマ点火装置、プラズマを用いる半導体製造装置及び半導体装置のプラズマ点火方法
DE29608484U1 (de) * 1996-05-10 1996-09-19 VTD Vakuumtechnik Dresden GmbH, 01257 Dresden Plasmaerzeugungseinrichtung mit einer Hohlkathode
RU2116707C1 (ru) * 1997-01-06 1998-07-27 Институт сильноточной электроники СО РАН Устройство для создания низкотемпературной газоразрядной плазмы
GB9722650D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source with target feeding apparatus
KR19990041210A (ko) * 1997-11-21 1999-06-15 박원훈 플라즈마를 이용한 재료표면상의 다양한 특성의 고분자 합성방법
US6101972A (en) * 1998-05-13 2000-08-15 Intevac, Inc. Plasma processing system and method
DE19902146C2 (de) * 1999-01-20 2003-07-31 Fraunhofer Ges Forschung Verfahren und Einrichtung zur gepulsten Plasmaaktivierung
EP1194611B1 (de) * 1999-07-13 2004-11-03 Unaxis Balzers Aktiengesellschaft Anlage und verfahren zur vakuumbehandlung bzw. zur pulverherstellung
EP1212775A1 (en) * 1999-08-06 2002-06-12 Advanced Energy Industries, Inc. Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof
DE19951017A1 (de) * 1999-10-22 2001-05-03 Bosch Gmbh Robert Verfahren und Vorrichtung zur Plasmabehandlung von Oberflächen
CH696179A5 (de) * 2000-06-08 2007-01-31 Satis Vacuum Ind Vertriebs Ag Plasma-Verdampfungsquelle für eine Vakuum Beschichtungsanordnung zum Aufbringen von Vergütungsschichten auf optische Substrate.
JP3957549B2 (ja) * 2002-04-05 2007-08-15 株式会社日立国際電気 基板処埋装置
US6902774B2 (en) * 2002-07-25 2005-06-07 Inficon Gmbh Method of manufacturing a device
JP4329403B2 (ja) * 2003-05-19 2009-09-09 東京エレクトロン株式会社 プラズマ処理装置
US7381311B2 (en) * 2003-10-21 2008-06-03 The United States Of America As Represented By The Secretary Of The Air Force Filtered cathodic-arc plasma source
DE102004010261A1 (de) * 2004-03-03 2005-09-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Zünden einer Hohlkatodenbogenentladung
US7557511B2 (en) * 2005-08-01 2009-07-07 Neocera, Llc Apparatus and method utilizing high power density electron beam for generating pulsed stream of ablation plasma
US20100230276A1 (en) * 2006-07-06 2010-09-16 Ramot At Tel Aviv University Ltd. Device and method for thin film deposition using a vacuum arc in an enclosed cathode-anode assembly
JP4859720B2 (ja) * 2007-03-16 2012-01-25 スタンレー電気株式会社 プラズマ成膜装置
WO2009004762A1 (ja) * 2007-07-02 2009-01-08 Shinmaywa Industries, Ltd. 成膜装置及びその運転方法
US20130098872A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. Switched electron beam plasma source array for uniform plasma production
JP5689051B2 (ja) * 2011-11-25 2015-03-25 株式会社神戸製鋼所 イオンボンバードメント装置

Also Published As

Publication number Publication date
JP2016509333A (ja) 2016-03-24
MX2015007567A (es) 2016-04-15
CA2894942C (en) 2021-01-05
US10032610B2 (en) 2018-07-24
CA2894942A1 (en) 2014-06-19
KR102106133B1 (ko) 2020-05-04
MX346874B (es) 2017-03-31
MY174916A (en) 2020-05-21
WO2014090389A1 (de) 2014-06-19
RU2015128048A (ru) 2017-01-17
BR112015013749B1 (pt) 2021-02-02
KR20150093713A (ko) 2015-08-18
BR112015013749A2 (pt) 2017-07-11
SG10201709310WA (en) 2018-01-30
JP6362615B2 (ja) 2018-07-25
SG11201504651QA (en) 2015-07-30
DE102012024340A1 (de) 2014-06-18
CN105144338B (zh) 2017-07-14
US20150318151A1 (en) 2015-11-05
EP2932523A1 (de) 2015-10-21
CN105144338A (zh) 2015-12-09
RU2643508C2 (ru) 2018-02-02
PT2932523T (pt) 2017-04-21
PL2932523T3 (pl) 2017-08-31
EP2932523B1 (de) 2017-02-15
ES2625301T3 (es) 2017-07-19
HUE033157T2 (en) 2017-11-28

Similar Documents

Publication Publication Date Title
AR093991A1 (es) Fuente de plasma
AR095602A1 (es) Sistema y método de recubrimiento de un sustrato
MX363864B (es) Un emisor de electrones para un tubo de rayos x.
MX2016005951A (es) Generador de neutrones de fuente de iones de emision de campo.
JP2015005387A5 (es)
WO2015047473A3 (en) Low-power, compact piezoelectric particle emission
MX2016005746A (es) Generador de neutrones de fuente de iones de nano emisores.
BR112015019027A8 (pt) dispositivo de bombardeio de íons e método para utilização do mesmo para limpar superfície de substrato
AR097352A1 (es) Procedimiento para la alimentación de energía eléctrica en una red de suministro eléctrico
GB201101132D0 (en) Combination ion gate and modifier
RU2015100885A (ru) Искровой разрядник
WO2014132049A3 (en) Apparatus for the generation of low-energy x-rays
MY176206A (en) Organic light emitting diode with light extracting electrode
RU2011127824A (ru) Способ генерации широкополосного электромагнитного излучения свч диапазона и устройство для его осуществления
RU2012114302A (ru) Времяпролетный масс-спектрометр с нелинейным отражателем
WO2013004566A3 (en) An electron beam device, a getter sheet and a method of manufacturing an electron beam device provided with said getter sheet
RU2012100143A (ru) Генератор высокочастотного излучения на основе разряда с полым катодом
ES2721017T3 (es) Fuente de electrones de alta energía basada en CNT con elemento de control de onda electromagnética remota
RU2013116463A (ru) Устройство для синтеза покрытий
RU2013129588A (ru) Плазменный источник проникающего излучения
PL409202A1 (pl) Profil lotniczy o zmiennym kształcie z powłoką z materiału aktywnego
TH160104A (th) แหล่งกำเนิดพลาสมา
TW201615055A (en) Field emitter, field emission light source and manufacturing method thereof
TH160104B (th) แหล่งกำเนิดพลาสมา
AR097982A1 (es) Lengüeta electrónica para ventilación de calzado

Legal Events

Date Code Title Description
FG Grant, registration