PL3775328T3 - Urządzenie do wytwarzania kryształów AIII-BV oraz płytki podłożowe z nich wykonane i wolne od naprężeń szczątkowych oraz dyslokacji - Google Patents

Urządzenie do wytwarzania kryształów AIII-BV oraz płytki podłożowe z nich wykonane i wolne od naprężeń szczątkowych oraz dyslokacji

Info

Publication number
PL3775328T3
PL3775328T3 PL20730425.4T PL20730425T PL3775328T3 PL 3775328 T3 PL3775328 T3 PL 3775328T3 PL 20730425 T PL20730425 T PL 20730425T PL 3775328 T3 PL3775328 T3 PL 3775328T3
Authority
PL
Poland
Prior art keywords
aiii
dislocations
crystals
free
manufacturing
Prior art date
Application number
PL20730425.4T
Other languages
English (en)
Inventor
Stefan Eichler
Michael Rosch
Dmitry SUPTEL
Ulrich Kretzer
Berndt Weinert
Original Assignee
Freiberger Compound Materials Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Materials Gmbh filed Critical Freiberger Compound Materials Gmbh
Publication of PL3775328T3 publication Critical patent/PL3775328T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PL20730425.4T 2019-06-07 2020-06-03 Urządzenie do wytwarzania kryształów AIII-BV oraz płytki podłożowe z nich wykonane i wolne od naprężeń szczątkowych oraz dyslokacji PL3775328T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019208389.7A DE102019208389A1 (de) 2019-06-07 2019-06-07 Verfahren zur Herstellung von Restspannungs- und versetzungsfreien AIII-BV-Substratwafern
PCT/EP2020/065375 WO2020245215A1 (en) 2019-06-07 2020-06-03 Device and method of manufacturing aiii-bv-crystals and substrate wafers manufactured thereof free of residual stress and dislocations

Publications (1)

Publication Number Publication Date
PL3775328T3 true PL3775328T3 (pl) 2024-03-25

Family

ID=70977534

Family Applications (1)

Application Number Title Priority Date Filing Date
PL20730425.4T PL3775328T3 (pl) 2019-06-07 2020-06-03 Urządzenie do wytwarzania kryształów AIII-BV oraz płytki podłożowe z nich wykonane i wolne od naprężeń szczątkowych oraz dyslokacji

Country Status (9)

Country Link
US (1) US11965266B2 (pl)
EP (2) EP3775328B1 (pl)
JP (3) JP7329541B2 (pl)
KR (3) KR102628746B1 (pl)
CN (2) CN116856061A (pl)
DE (1) DE102019208389A1 (pl)
PL (1) PL3775328T3 (pl)
TW (3) TWI768366B (pl)
WO (1) WO2020245215A1 (pl)

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DE102019208389A1 (de) * 2019-06-07 2020-12-10 Freiberger Compound Materials Gmbh Verfahren zur Herstellung von Restspannungs- und versetzungsfreien AIII-BV-Substratwafern
CN113423876B (zh) * 2019-07-10 2023-12-22 住友电气工业株式会社 砷化镓单晶基板
JP7146988B1 (ja) * 2021-03-19 2022-10-04 Ｄｏｗａエレクトロニクス株式会社 ＧａＡｓウエハの製造方法およびＧａＡｓウエハ群
CN114111688B (zh) * 2021-07-29 2023-08-25 深圳市中图仪器股份有限公司 正交轴系统的正交性的测量装置和方法
WO2023054202A1 (ja) * 2021-09-29 2023-04-06 Ｄｏｗａエレクトロニクス株式会社 ＧａＡｓウエハ、ＧａＡｓウエハ群及びＧａＡｓインゴットの製造方法
WO2024142270A1 (ja) * 2022-12-27 2024-07-04 住友電気工業株式会社 ヒ化ガリウム単結晶基板およびその製造方法
DE102023200457A1 (de) * 2023-01-20 2024-07-25 Freiberger Compound Materials Gesellschaft mit beschränkter Haftung Vorrichtung und Verfahren zur Herstellung von AIII-BV-Verbindungshalbleiter-Einkristallen sowie AIII-BV-Verbindungshalbleiter-Einkristall und -Wafer
CN119768572A (zh) * 2023-04-18 2025-04-04 住友电气工业株式会社 磷化铟单晶衬底以及磷化铟单晶的制造方法
CN121443782A (zh) * 2023-10-04 2026-01-30 住友电气工业株式会社 砷化镓单晶的制造方法、砷化镓单晶衬底的制造方法、砷化镓单晶衬底以及砷化镓单晶
JPWO2025079255A1 (pl) * 2023-10-13 2025-04-17
KR20250069793A (ko) 2023-11-11 2025-05-20 손준우 자동 회전 슬리퍼
DE102024202321A1 (de) 2024-03-12 2025-09-18 Forschungsverbund Berlin E.V. Verbesserte dotierte InP-Kristalle
JP7790635B1 (ja) * 2024-11-27 2025-12-23 住友電気工業株式会社 リン化インジウム基板およびリン化インジウム結晶の製造方法

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Also Published As

Publication number Publication date
EP3775328B1 (en) 2023-11-08
TW202100818A (zh) 2021-01-01
EP4249650A2 (en) 2023-09-27
US20220106702A1 (en) 2022-04-07
TWM616656U (zh) 2021-09-11
EP4249650A3 (en) 2023-10-25
TWI768366B (zh) 2022-06-21
CN112048770A (zh) 2020-12-08
CN116856061A (zh) 2023-10-10
KR102546061B1 (ko) 2023-06-21
KR20230165390A (ko) 2023-12-05
KR20220132063A (ko) 2022-09-29
JP7329541B2 (ja) 2023-08-18
TW202132632A (zh) 2021-09-01
JP2022119962A (ja) 2022-08-17
DE102019208389A1 (de) 2020-12-10
TWI774282B (zh) 2022-08-11
JP2024111297A (ja) 2024-08-16
EP4249650B1 (en) 2025-11-05
EP3775328A1 (en) 2021-02-17
CN112048770B (zh) 2023-08-29
JP7510969B2 (ja) 2024-07-04
KR20210082508A (ko) 2021-07-05
US11965266B2 (en) 2024-04-23
KR102842541B1 (ko) 2025-08-05
KR102628746B1 (ko) 2024-01-24
JP2021533057A (ja) 2021-12-02
WO2020245215A1 (en) 2020-12-10

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