SG11202000800VA - Method for evaluating edge shape of silicon wafer, apparatus for evaluating thereof, silicon wafer, method for selecting and method for manufacturing thereof - Google Patents
Method for evaluating edge shape of silicon wafer, apparatus for evaluating thereof, silicon wafer, method for selecting and method for manufacturing thereofInfo
- Publication number
- SG11202000800VA SG11202000800VA SG11202000800VA SG11202000800VA SG11202000800VA SG 11202000800V A SG11202000800V A SG 11202000800VA SG 11202000800V A SG11202000800V A SG 11202000800VA SG 11202000800V A SG11202000800V A SG 11202000800VA SG 11202000800V A SG11202000800V A SG 11202000800VA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon wafer
- evaluating
- selecting
- manufacturing
- edge shape
- Prior art date
Links
- 238000000034 method Methods 0.000 title 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 2
- 229910052710 silicon Inorganic materials 0.000 title 2
- 239000010703 silicon Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Immunology (AREA)
- Ceramic Engineering (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017156723 | 2017-08-15 | ||
JP2017197880A JP6750592B2 (en) | 2017-08-15 | 2017-10-11 | Method and apparatus for evaluating edge shape of silicon wafer, silicon wafer, and method for selecting and manufacturing the same |
PCT/JP2018/028167 WO2019035336A1 (en) | 2017-08-15 | 2018-07-27 | Evaluation method and evaluation device of edge shape of silicon wafer, silicon wafer, and selection method and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202000800VA true SG11202000800VA (en) | 2020-02-27 |
Family
ID=65637812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202000800VA SG11202000800VA (en) | 2017-08-15 | 2018-07-27 | Method for evaluating edge shape of silicon wafer, apparatus for evaluating thereof, silicon wafer, method for selecting and method for manufacturing thereof |
Country Status (7)
Country | Link |
---|---|
US (1) | US11486833B2 (en) |
EP (1) | EP3671816A4 (en) |
JP (1) | JP6750592B2 (en) |
KR (1) | KR102520902B1 (en) |
CN (1) | CN111033707B (en) |
SG (1) | SG11202000800VA (en) |
TW (1) | TWI784034B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101992778B1 (en) | 2017-11-01 | 2019-06-25 | 에스케이실트론 주식회사 | Wafer and method for analyzing shape of the same |
CN110057316A (en) * | 2019-04-25 | 2019-07-26 | 华南理工大学 | A method of the tower crane rod piece buckling monitoring based on unmanned plane image recognition |
CN113611624A (en) * | 2021-07-30 | 2021-11-05 | 上海超硅半导体股份有限公司 | Silicon wafer clamp damage prediction method and device and silicon wafer |
EP4290554A3 (en) | 2023-10-26 | 2024-05-22 | Siltronic AG | Parameterization of wafer rounding |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2825048B2 (en) * | 1992-08-10 | 1998-11-18 | 信越半導体株式会社 | Semiconductor silicon substrate |
JP3197253B2 (en) * | 1998-04-13 | 2001-08-13 | 株式会社日平トヤマ | Wafer chamfering method |
CN100339969C (en) * | 2000-11-16 | 2007-09-26 | 信越半导体株式会社 | Wafer shape evaluating method and device and device producing method, wafer and wafer selecting method |
JP4162892B2 (en) * | 2002-01-11 | 2008-10-08 | 日鉱金属株式会社 | Semiconductor wafer and manufacturing method thereof |
JP2004281609A (en) * | 2003-03-14 | 2004-10-07 | Renesas Technology Corp | Semiconductor wafer |
JP3534115B1 (en) * | 2003-04-02 | 2004-06-07 | 住友電気工業株式会社 | Edge-polished nitride semiconductor substrate, edge-polished GaN free-standing substrate, and edge processing method for nitride semiconductor substrate |
JP4915146B2 (en) * | 2006-06-08 | 2012-04-11 | 信越半導体株式会社 | Wafer manufacturing method |
JP2007329391A (en) * | 2006-06-09 | 2007-12-20 | Disco Abrasive Syst Ltd | Crystal orientation indication mark detecting mechanism of semiconductor wafer |
EP2107598B1 (en) * | 2007-01-31 | 2016-09-07 | Shin-Etsu Handotai Co., Ltd. | Chamfering apparatus for silicon wafer and method for producing silicon wafer |
JP2009168634A (en) | 2008-01-16 | 2009-07-30 | Kobelco Kaken:Kk | Shape measuring method, and shape measuring device |
JP2009222516A (en) * | 2008-03-14 | 2009-10-01 | Raytex Corp | Edge inspection apparatus and edge inspection method |
JP5621702B2 (en) | 2011-04-26 | 2014-11-12 | 信越半導体株式会社 | Semiconductor wafer and manufacturing method thereof |
JP6035982B2 (en) * | 2012-08-09 | 2016-11-30 | 株式会社Sumco | Epitaxial silicon wafer manufacturing method and epitaxial silicon wafer |
KR101540569B1 (en) * | 2013-12-24 | 2015-07-31 | 주식회사 엘지실트론 | Method and apparatus for analyzing shape of wafer |
JP6191534B2 (en) * | 2014-05-01 | 2017-09-06 | 信越半導体株式会社 | Wafer warpage evaluation method and wafer selection method |
JP6045542B2 (en) * | 2014-09-11 | 2016-12-14 | 信越半導体株式会社 | Semiconductor wafer processing method, bonded wafer manufacturing method, and epitaxial wafer manufacturing method |
JP2016165768A (en) * | 2015-03-09 | 2016-09-15 | 信越半導体株式会社 | Wafer chamfering device and wafer chamfering method |
JP6528527B2 (en) * | 2015-04-27 | 2019-06-12 | 株式会社Sumco | Method of manufacturing truer, method of manufacturing semiconductor wafer, and chamfering apparatus for semiconductor wafer |
-
2017
- 2017-10-11 JP JP2017197880A patent/JP6750592B2/en active Active
-
2018
- 2018-07-27 US US16/636,066 patent/US11486833B2/en active Active
- 2018-07-27 CN CN201880053033.9A patent/CN111033707B/en active Active
- 2018-07-27 KR KR1020207003932A patent/KR102520902B1/en active IP Right Grant
- 2018-07-27 SG SG11202000800VA patent/SG11202000800VA/en unknown
- 2018-07-27 EP EP18846345.9A patent/EP3671816A4/en active Pending
- 2018-08-03 TW TW107126988A patent/TWI784034B/en active
Also Published As
Publication number | Publication date |
---|---|
CN111033707B (en) | 2023-09-05 |
JP6750592B2 (en) | 2020-09-02 |
US20200240929A1 (en) | 2020-07-30 |
JP2019036700A (en) | 2019-03-07 |
EP3671816A4 (en) | 2021-04-28 |
KR102520902B1 (en) | 2023-04-13 |
US11486833B2 (en) | 2022-11-01 |
CN111033707A (en) | 2020-04-17 |
TWI784034B (en) | 2022-11-21 |
EP3671816A1 (en) | 2020-06-24 |
TW201921537A (en) | 2019-06-01 |
KR20200035407A (en) | 2020-04-03 |
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