SG11202108351YA - Preparation method and application of monocrystalline silicon wafer - Google Patents

Preparation method and application of monocrystalline silicon wafer

Info

Publication number
SG11202108351YA
SG11202108351YA SG11202108351YA SG11202108351YA SG11202108351YA SG 11202108351Y A SG11202108351Y A SG 11202108351YA SG 11202108351Y A SG11202108351Y A SG 11202108351YA SG 11202108351Y A SG11202108351Y A SG 11202108351YA SG 11202108351Y A SG11202108351Y A SG 11202108351YA
Authority
SG
Singapore
Prior art keywords
preparation
application
silicon wafer
monocrystalline silicon
monocrystalline
Prior art date
Application number
SG11202108351YA
Inventor
Xiangxi Meng
Yuhong Cao
Tao Chen
Liming Fu
Original Assignee
Changzhou Shichuang Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Shichuang Energy Co Ltd filed Critical Changzhou Shichuang Energy Co Ltd
Publication of SG11202108351YA publication Critical patent/SG11202108351YA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/028Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
SG11202108351YA 2019-03-04 2020-03-02 Preparation method and application of monocrystalline silicon wafer SG11202108351YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910159650.3A CN109747055B (en) 2019-03-04 2019-03-04 Preparation method and application of monocrystalline silicon wafer
PCT/CN2020/077444 WO2020177667A1 (en) 2019-03-04 2020-03-02 Preparation method and application of monocrystalline silicon wafer

Publications (1)

Publication Number Publication Date
SG11202108351YA true SG11202108351YA (en) 2021-08-30

Family

ID=66408069

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202108351YA SG11202108351YA (en) 2019-03-04 2020-03-02 Preparation method and application of monocrystalline silicon wafer

Country Status (5)

Country Link
KR (1) KR102583010B1 (en)
CN (2) CN109747055B (en)
MY (1) MY194767A (en)
SG (1) SG11202108351YA (en)
WO (1) WO2020177667A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109747055B (en) * 2019-03-04 2020-12-04 常州时创能源股份有限公司 Preparation method and application of monocrystalline silicon wafer
CN110060951B (en) * 2019-05-21 2024-02-13 常州时创能源股份有限公司 Graphite boat for silicon wafer coating
CN110416156B (en) * 2019-07-31 2022-04-26 常州时创能源股份有限公司 Preparation process of solar cell slices
CN110466083B (en) * 2019-08-07 2021-11-12 常州时创能源股份有限公司 Utilization method of silicon rod edge leather
CN110534617A (en) * 2019-08-29 2019-12-03 常州时创能源科技有限公司 The preparation method of small pieces battery
CN110712308A (en) * 2019-10-23 2020-01-21 常州时创能源科技有限公司 Cutting method of edge leather
CN110789010A (en) * 2019-11-01 2020-02-14 常州时创能源科技有限公司 Cutting process of crystal silicon edge leather
CN110625834A (en) * 2019-11-01 2019-12-31 常州时创能源科技有限公司 Method for cutting crystalline silicon edge leather
CN110789011A (en) * 2019-11-07 2020-02-14 北京昌日新能源科技有限公司 Novel photovoltaic right-angle monocrystalline silicon piece and manufacturing method thereof
CN111029440B (en) * 2019-12-11 2022-01-28 晶科能源有限公司 Single crystal battery and manufacturing method of single crystal silicon wafer
CN110978303A (en) * 2019-12-20 2020-04-10 江苏高照新能源发展有限公司 Cutting method for improving utilization rate of silicon single crystal rod
CN111361027B (en) * 2020-04-30 2022-05-31 常州时创能源股份有限公司 Silicon rod cutting process
CN114227957B (en) * 2021-12-20 2024-03-26 常州时创能源股份有限公司 Silicon rod cutting method
CN114347283A (en) * 2022-01-19 2022-04-15 浙江昀丰新材料科技股份有限公司 Processing technology of photovoltaic substrate wafer

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2752768B1 (en) * 1996-08-27 2003-04-11 Commissariat Energie Atomique PROCESS FOR OBTAINING A WAFER OF LARGE-SIZE SEMICONDUCTOR MATERIAL AND USE OF THE WAFER OBTAINED FOR MAKING SEMICONDUCTOR-TYPE SUBSTRATES ON INSULATION
JP5108123B2 (en) * 2011-01-27 2012-12-26 株式会社岡本工作機械製作所 Cylindrical ingot block cutting apparatus and method of processing into a square pillar block using the same
WO2013095928A1 (en) * 2011-12-23 2013-06-27 Gtat Corporation Method of producing bricks from a silicon ingot
CN102758243A (en) * 2012-07-06 2012-10-31 无锡中硅科技有限公司 Seed crystal of large-size single crystal and production process thereof
US20150191846A1 (en) * 2012-08-17 2015-07-09 Gtat Corporation System and method of growing silicon ingots from seeds in a crucible and manufacture of seeds used therein
TWI539509B (en) * 2013-07-05 2016-06-21 茂迪股份有限公司 Method for cutting ingot, brick and wafer
CN103862584B (en) * 2014-04-04 2015-09-30 常州时创能源科技有限公司 The evolution technique of monocrystalline silicon round rod used for solar batteries and application
CN204367198U (en) * 2014-12-24 2015-06-03 湖南宇晶机器股份有限公司 Multi-thread broken side's cutting machine
CN108972919A (en) * 2017-06-01 2018-12-11 江苏拓正茂源新能源有限公司 The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer
CN108068221B (en) * 2017-11-01 2019-03-05 宇泰(江西)新能源有限公司 A kind of processing method with column crystal silicon rod processing rectangular photovoltaic cells silicon wafer
CN108437246A (en) * 2018-04-03 2018-08-24 江阴市瑞尔嘉新能源科技有限公司 A kind of method and apparatus of silicon core flaw-piece cutting finished silicon core
CN109747055B (en) * 2019-03-04 2020-12-04 常州时创能源股份有限公司 Preparation method and application of monocrystalline silicon wafer

Also Published As

Publication number Publication date
CN109747055A (en) 2019-05-14
WO2020177667A1 (en) 2020-09-10
MY194767A (en) 2022-12-15
CN113382835A (en) 2021-09-10
KR102583010B1 (en) 2023-09-25
KR20210110658A (en) 2021-09-08
CN113382835B (en) 2022-08-02
CN109747055B (en) 2020-12-04

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