SG11202108351YA - Preparation method and application of monocrystalline silicon wafer - Google Patents
Preparation method and application of monocrystalline silicon waferInfo
- Publication number
- SG11202108351YA SG11202108351YA SG11202108351YA SG11202108351YA SG11202108351YA SG 11202108351Y A SG11202108351Y A SG 11202108351YA SG 11202108351Y A SG11202108351Y A SG 11202108351YA SG 11202108351Y A SG11202108351Y A SG 11202108351YA SG 11202108351Y A SG11202108351Y A SG 11202108351YA
- Authority
- SG
- Singapore
- Prior art keywords
- preparation
- application
- silicon wafer
- monocrystalline silicon
- monocrystalline
- Prior art date
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
- 238000002360 preparation method Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910159650.3A CN109747055B (en) | 2019-03-04 | 2019-03-04 | Preparation method and application of monocrystalline silicon wafer |
| PCT/CN2020/077444 WO2020177667A1 (en) | 2019-03-04 | 2020-03-02 | Preparation method and application of monocrystalline silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202108351YA true SG11202108351YA (en) | 2021-08-30 |
Family
ID=66408069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202108351YA SG11202108351YA (en) | 2019-03-04 | 2020-03-02 | Preparation method and application of monocrystalline silicon wafer |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR102583010B1 (en) |
| CN (2) | CN109747055B (en) |
| MY (1) | MY194767A (en) |
| SG (1) | SG11202108351YA (en) |
| WO (1) | WO2020177667A1 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109747055B (en) * | 2019-03-04 | 2020-12-04 | 常州时创能源股份有限公司 | Preparation method and application of monocrystalline silicon wafer |
| CN110060951B (en) * | 2019-05-21 | 2024-02-13 | 常州时创能源股份有限公司 | Graphite boat for silicon wafer coating |
| CN110416156B (en) * | 2019-07-31 | 2022-04-26 | 常州时创能源股份有限公司 | Preparation process of solar cell slices |
| CN110466083B (en) * | 2019-08-07 | 2021-11-12 | 常州时创能源股份有限公司 | Utilization method of silicon rod edge leather |
| CN110534617A (en) * | 2019-08-29 | 2019-12-03 | 常州时创能源科技有限公司 | The preparation method of small pieces battery |
| CN110712308A (en) * | 2019-10-23 | 2020-01-21 | 常州时创能源科技有限公司 | Cutting method of edge leather |
| CN110625834A (en) * | 2019-11-01 | 2019-12-31 | 常州时创能源科技有限公司 | Method for cutting crystalline silicon edge leather |
| CN110789010A (en) * | 2019-11-01 | 2020-02-14 | 常州时创能源科技有限公司 | Cutting process of crystal silicon edge leather |
| CN110789011A (en) * | 2019-11-07 | 2020-02-14 | 北京昌日新能源科技有限公司 | Novel photovoltaic right-angle monocrystalline silicon piece and manufacturing method thereof |
| CN111029440B (en) * | 2019-12-11 | 2022-01-28 | 晶科能源有限公司 | Single crystal battery and manufacturing method of single crystal silicon wafer |
| CN110978303A (en) * | 2019-12-20 | 2020-04-10 | 江苏高照新能源发展有限公司 | Cutting method for improving utilization rate of silicon single crystal rod |
| CN111361027B (en) * | 2020-04-30 | 2022-05-31 | 常州时创能源股份有限公司 | Silicon rod cutting process |
| CN114227957B (en) * | 2021-12-20 | 2024-03-26 | 常州时创能源股份有限公司 | Silicon rod cutting method |
| CN114347283A (en) * | 2022-01-19 | 2022-04-15 | 浙江昀丰新材料科技股份有限公司 | Processing technology of photovoltaic substrate wafer |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2752768B1 (en) * | 1996-08-27 | 2003-04-11 | Commissariat Energie Atomique | PROCESS FOR OBTAINING A WAFER OF LARGE-SIZE SEMICONDUCTOR MATERIAL AND USE OF THE WAFER OBTAINED FOR MAKING SEMICONDUCTOR-TYPE SUBSTRATES ON INSULATION |
| JP5108123B2 (en) * | 2011-01-27 | 2012-12-26 | 株式会社岡本工作機械製作所 | Cylindrical ingot block cutting apparatus and method of processing into a square pillar block using the same |
| WO2013095928A1 (en) * | 2011-12-23 | 2013-06-27 | Gtat Corporation | Method of producing bricks from a silicon ingot |
| CN102758243A (en) * | 2012-07-06 | 2012-10-31 | 无锡中硅科技有限公司 | Seed crystal of large-size single crystal and production process thereof |
| US20150191846A1 (en) * | 2012-08-17 | 2015-07-09 | Gtat Corporation | System and method of growing silicon ingots from seeds in a crucible and manufacture of seeds used therein |
| TWI539509B (en) * | 2013-07-05 | 2016-06-21 | 茂迪股份有限公司 | Method for cutting ingot, brick and wafer |
| CN103862584B (en) * | 2014-04-04 | 2015-09-30 | 常州时创能源科技有限公司 | The evolution technique of monocrystalline silicon round rod used for solar batteries and application |
| CN204367198U (en) * | 2014-12-24 | 2015-06-03 | 湖南宇晶机器股份有限公司 | Multi-thread broken side's cutting machine |
| CN108972919A (en) * | 2017-06-01 | 2018-12-11 | 江苏拓正茂源新能源有限公司 | The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer |
| CN108068221B (en) * | 2017-11-01 | 2019-03-05 | 宇泰（江西）新能源有限公司 | A kind of processing method with column crystal silicon rod processing rectangular photovoltaic cells silicon wafer |
| CN108437246A (en) * | 2018-04-03 | 2018-08-24 | 江阴市瑞尔嘉新能源科技有限公司 | A kind of method and apparatus of silicon core flaw-piece cutting finished silicon core |
| CN109747055B (en) * | 2019-03-04 | 2020-12-04 | 常州时创能源股份有限公司 | Preparation method and application of monocrystalline silicon wafer |
-
2019
- 2019-03-04 CN CN201910159650.3A patent/CN109747055B/en active Active
-
2020
- 2020-03-02 CN CN202080010693.6A patent/CN113382835B/en active Active
- 2020-03-02 KR KR1020217024045A patent/KR102583010B1/en active IP Right Grant
- 2020-03-02 WO PCT/CN2020/077444 patent/WO2020177667A1/en active Application Filing
- 2020-03-02 MY MYPI2021004332A patent/MY194767A/en unknown
- 2020-03-02 SG SG11202108351YA patent/SG11202108351YA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN113382835A (en) | 2021-09-10 |
| KR20210110658A (en) | 2021-09-08 |
| CN109747055A (en) | 2019-05-14 |
| MY194767A (en) | 2022-12-15 |
| CN109747055B (en) | 2020-12-04 |
| WO2020177667A1 (en) | 2020-09-10 |
| KR102583010B1 (en) | 2023-09-25 |
| CN113382835B (en) | 2022-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11202108351YA (en) | Preparation method and application of monocrystalline silicon wafer | |
| IL271984A (en) | Epitaxially coated semiconductor wafer of monocrystalline silicon and method for production thereof | |
| SG11202103910PA (en) | Silicon nitride etching composition and method | |
| EP3617351A4 (en) | Silicon wafer horizontal growth device and method | |
| GB2589335B (en) | Integrated III-V/silicon optoelectronic device and method of manufacture thereof | |
| EP3721478A4 (en) | Monocrystalline germanium wafers, method for preparing the same, method for preparing ingots and use of monocrystalline wafers | |
| EP3909069A4 (en) | Methods of semiconductor device fabrication | |
| EP3866185A4 (en) | Semiconductor silicon wafer cleaning treatment apparatus and cleaning method | |
| EP3931865A4 (en) | System and method for measuring misregistration of semiconductor device wafers utilizing induced topography | |
| SG11202009171XA (en) | Surface treatment method of wafer and composition used for said method | |
| EP3811408A4 (en) | Semiconductor device and method of fabrication thereof | |
| SG10202008623SA (en) | Wafer pre-aligner and method of pre-aligning wafer | |
| GB2589092B (en) | III-V / Silicon optoelectronic device and method of manufacture thereof | |
| PL3775328T3 (en) | Device for manufacturing aiii-bv-crystals and substrate wafers manufactured thereof free of residual stress and dislocations | |
| IL271789B (en) | Semiconductor wafer made of single-crystal silicon and process for the production thereof | |
| EP3540761A4 (en) | Polishing composition and silicon wafer polishing method | |
| SG11201708416PA (en) | Silicon epitaxial wafer and method of producing same | |
| EP3944288A4 (en) | Semiconductor wafer and method of manufacturing semiconductor device | |
| EP3780117A4 (en) | Method of manufacturing semiconductor device and semiconductor device | |
| EP3961724A4 (en) | Semiconductor device and method of manufacturing semiconductor device | |
| IL271983A (en) | Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer | |
| EP4036280A4 (en) | Method of manufacturing sic semiconductor device and sic semiconductor device | |
| GB2595948B (en) | Coupon wafer and method of preparation thereof | |
| EP3783640A4 (en) | Semiconductor device and method of manufacturing semiconductor device | |
| SG11202003708UA (en) | Semiconductor wafer composed of monocrystalline silicon |